CN-122028721-A - Air bridge preparation method and device and electronic equipment

CN122028721ACN 122028721 ACN122028721 ACN 122028721ACN-122028721-A

Abstract

The invention discloses an air bridge preparation method and device and electronic equipment, and belongs to the technical field of chip preparation. In the air bridge preparation method, a target metal material is sputtered on the surface of a substrate with a target supporting layer, a target metal layer formed by the target metal material in a target phase state is formed, the target supporting layer is removed, and the air bridge formed by the target metal layer is obtained. In the air bridge preparation method, the target metal material forming the air bridge is in the target phase state, and the microwave loss of the target metal material in the target phase state is smaller than the preset threshold value, so that the microwave loss of the prepared air bridge can be reduced.

Inventors

JIA ZHILONG
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Assignees

本源量子计算科技（合肥）股份有限公司

Dates

Publication Date: 20260512
Application Date: 20241031

Claims (10)

1. A method of making an air bridge, the method comprising: obtaining a substrate with a target supporting layer; sputtering a target metal material to form a target metal layer which covers the target supporting layer and is formed by the target metal material in a target phase state, wherein the microwave loss of the target metal material in the target phase state is smaller than a preset threshold value; And removing the target supporting layer to obtain the air bridge formed by the target metal layer.
2. The air bridge fabrication method of claim 1, further comprising, prior to the acquiring the substrate with the target support layer: Acquiring a plurality of initial supporting materials and a plurality of initial metal materials; According to the microwave loss of each initial metal material in different phase states, taking the initial metal material and the phase state with the microwave loss smaller than the preset threshold value as the target metal material and the target phase state; detecting the corresponding phase states of the target metal material sputtered on each initial support material, and determining the target support material for preparing the target support layer according to the target phase states.
3. The method of claim 2, wherein said detecting a corresponding phase of sputtering of said target metallic material onto each of said initial support materials comprises: for each of the initial support materials, preparing a first planar layer composed of the initial support material; Sputtering the target metal material on the surface of the first plane layer to form a second plane layer laminated with the first plane layer; Irradiating the second plane layer by using X rays, and collecting a diffraction pattern of the second plane layer; and determining the corresponding phase state of the target metal material on the initial support material according to the position information of the characteristic peak in the diffraction pattern.
4. The air bridge fabrication method of claim 1, further comprising, prior to the acquiring the substrate with the target support layer: And preparing a first photoresist mask with a first through hole on the upper surface of the substrate.
5. The method of claim 4, wherein the step of obtaining a substrate having a target support layer comprises: sputtering a target support material within the first via; and stripping the first photoresist mask to obtain the target supporting layer.
6. The air bridge fabrication method of claim 1, wherein sputtering the target metal material to form a target metal layer covering the target support layer and composed of a target metal material in a target phase, comprises: Forming a second photoresist mask with a second through hole on the upper surface of the substrate and the upper surface of the target supporting layer, wherein the distance from each broadside of the second through hole to the broadside of the adjacent target supporting layer is equal, the projection length of the second through hole is larger than the length of the target supporting layer along the direction perpendicular to the upper surface of the target supporting layer, and the projection width of the second through hole is smaller than the width of the target supporting layer; and sputtering a target metal material in the second through hole until the target metal layer which covers the target supporting layer in the second through hole and is composed of the target metal material in the target phase is formed.
7. The method of claim 6, wherein forming a second photoresist mask having a second via hole on the upper surface of the substrate and the upper surface of the target support layer, comprises: coating photoresist on the upper surface of the substrate and the upper surface of the target supporting layer to form a photoresist layer; Determining the position, the length and the width of the second through hole according to the position, the length and the width of the target supporting layer; and carrying out exposure and development on the photoresist layer based on the position, the length and the width of the second through hole to obtain the second photoresist mask.
8. The method of claim 1, wherein when the type of the target support layer is aluminum, the removing the target support layer to obtain an air bridge composed of the target metal layer comprises: and removing the target supporting layer by utilizing a wet etching process, and taking the target metal layer on the substrate as the air bridge.
9. An air bridge preparation apparatus, the apparatus comprising: An acquisition module for acquiring a substrate having a target support layer; The sputtering module is used for sputtering a target metal material to form a target metal layer which covers the target supporting layer and is formed by the target metal material in a target phase state, and the microwave loss of the target metal material in the target phase state is smaller than a preset threshold value; And the removing module is used for removing the target supporting layer to obtain an air bridge formed by the target metal layer.
10. An electronic device includes a processor; A memory for storing processor-executable instructions; Wherein the processor is configured to implement the air bridge fabrication method of any one of claims 1-8 by executing the executable instructions.

Description

Air bridge preparation method and device and electronic equipment Technical Field The invention belongs to the technical field of chip preparation, and particularly relates to an air bridge preparation method, an air bridge preparation device and electronic equipment. Background The air bridge is a suspended structure used for connecting the two sides of the potential unbalance position in the quantum chip, and the air bridge avoids direct contact with a lower circuit or a resonant cavity by suspending above the surface of the chip, thereby reducing electromagnetic loss. At present, an air bridge is prepared by adopting a supporting material sacrificing process, and the air bridge comprises the steps that a supporting structure is formed by adopting a supporting material on a substrate, metal is plated on the surface of the whole substrate, then the metal of a bridge deck is reserved by adopting a photoetching process, redundant metal is etched, and finally the supporting structure is stripped and removed. With the increase of the types of supporting materials and bridge deck metal materials, the selection of different supporting layers and bridge deck metal materials can have different effects on the microwave loss of the air bridge. Therefore, how to reduce the microwave loss of the air bridge produced based on the choice of the kind between the support layer and the bridge deck metal material is a problem to be solved in the process of producing the air bridge. Disclosure of Invention The invention aims to provide a preparation method and device of an air bridge and electronic equipment, which solve the defects in the prior art, and can reduce the microwave loss of the prepared air bridge based on the selection of the types of supporting layers and bridge deck metal materials. The exemplary embodiment of the present application is implemented as follows. In a first aspect, examples of the present application provide an air bridge preparation method, the method comprising: obtaining a substrate with a target supporting layer; sputtering a target metal material to form a target metal layer which covers the target supporting layer and is formed by the target metal material in a target phase state, wherein the microwave loss of the target metal material in the target phase state is smaller than a preset threshold value; And removing the target supporting layer to obtain the air bridge formed by the target metal layer. According to some examples of the application, before the obtaining the substrate with the target support layer, the air bridge preparation method further comprises: Acquiring a plurality of initial supporting materials and a plurality of initial metal materials; According to the microwave loss of each initial metal material in different phase states, taking the initial metal material and the phase state with the microwave loss smaller than the preset threshold value as the target metal material and the target phase state; detecting the corresponding phase states of the target metal material sputtered on each initial support material, and determining the target support material for preparing the target support layer according to the target phase states. According to some examples of the application, the detecting the corresponding phase of sputtering of the target metallic material on each of the initial support materials comprises: for each of the initial support materials, preparing a first planar layer composed of the initial support material; Sputtering the target metal material on the surface of the first plane layer to form a second plane layer laminated with the first plane layer; Irradiating the second plane layer by using X rays, and collecting a diffraction pattern of the second plane layer; and determining the corresponding phase state of the target metal material on the initial support material according to the position information of the characteristic peak in the diffraction pattern. According to some examples of the application, before the obtaining the substrate with the target support layer, the air bridge preparation method further comprises: And preparing a first photoresist mask with a first through hole on the upper surface of the substrate. According to some examples of the application, the obtaining a substrate having a target support layer includes: sputtering a target support material within the first via; and stripping the first photoresist mask to obtain the target supporting layer. According to some examples of the application, the sputtering of the target metal material forms a target metal layer covering the target support layer and composed of a target metal material in a target phase, comprising: Forming a second photoresist mask with a second through hole on the upper surface of the substrate and the upper surface of the target supporting layer, wherein the distance from each broadside of the second through hole to the broadside of the adjacent target supporting