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CN-122028731-A - Integrated device for integrated circuit and electromagnetic shielding and packaging structure thereof

CN122028731ACN 122028731 ACN122028731 ACN 122028731ACN-122028731-A

Abstract

The invention discloses an integrated device for an integrated circuit and electromagnetic shielding and a packaging structure thereof, which comprises a diamond layer with the thickness of 1-10,000 mu m, wherein the diamond layer comprises a p-type or n-type doped region and is configured to serve as a radiator and a microwave attenuator at the same time, and at least one side wall structure surrounding the edge of the diamond layer, wherein the side wall structure is made of a heat-conducting metal material and is connected with the diamond layer in a fixed connection mode. According to the invention, the functions of the diamond radiator and the microwave attenuator are integrated into a whole, and the metal side wall is combined to form the packaging cover, so that the packaging structure is greatly simplified, and the size and the cost are reduced. The ultra-high thermal conductivity of diamond ensures excellent heat dissipation, while the controllable doping technique achieves adjustable microwave attenuation. In addition, by the additional metal coating and the intrinsic diamond layer, the EMI shielding and electric insulation functions can be further integrated, and a comprehensive and efficient protection and management scheme is provided for the high-performance chip.

Inventors

  • YANG JUNKUN

Assignees

  • 深圳市先行设备科技有限公司

Dates

Publication Date
20260512
Application Date
20260203

Claims (19)

  1. 1. An integrated device for a semiconductor device, comprising a diamond layer of thickness 1-10000 μm, the diamond layer being an intrinsic diamond layer or comprising p-type or n-type doped regions, when the diamond layer is an intrinsic diamond layer, it is configured to act as a heat spreader, when the diamond layer comprises p-type or n-type doped regions, it is configured to act as both a heat spreader and a microwave attenuator, and at least one sidewall structure surrounding the edge of the diamond layer, the sidewall structure being made of a thermally conductive metallic material or an insulating encapsulation material, being connected to the diamond layer by a fixed connection, the sidewall structure having a predetermined height adapted to the thickness of the integrated circuit to be encapsulated, for encapsulating the device over one or more integrated circuits, and defining a thickness of thermal interface material between the diamond layer and the integrated circuit of 0.1-50 μm.
  2. 2. The integrated device of claim 1, wherein the doping concentration of the doped region in the diamond layer ranges from 1E18 to 1E21 atoms/cm 3.
  3. 3. The integrated device of claim 1, wherein the diamond layer has a thickness of 100-500 μm.
  4. 4. The integrated device of claim 1, wherein the sidewall structure comprises four metal sidewalls or epoxy molding compound sidewalls, and the thermally conductive metal material is oxygen-free copper or an aluminum alloy.
  5. 5. The integrated device of claim 1, wherein the fixed connection is a braze joint.
  6. 6. The integrated device of claim 1, further comprising a metal coating layer covering an outer surface of the diamond layer for providing electromagnetic interference shielding, wherein the metal coating layer has a thickness of 30-100 μm and is made of at least one material selected from the group consisting of copper, silver, aluminum, nickel, and gold.
  7. 7. The integrated device of claim 1, wherein an intrinsic or near-intrinsic diamond layer having a thickness of 10-50 μm is grown on a surface of the doped region on a side facing the integrated circuit, the near-intrinsic diamond layer being a diamond layer having an impurity concentration of less than 1E16 atoms/cm 3, and the intrinsic or near-intrinsic diamond layer having a resistivity of not less than 1E10 Ω cm at room temperature.
  8. 8. The integrated device of claim 1, further comprising a metal heat sink disposed on a side of the diamond layer facing away from the integrated circuit, the heat sink having an effective heat dissipation surface area in contact with the cooling fluid that is 2 to 5 times the outer surface area of the diamond layer.
  9. 9. The integrated device of claim 1, wherein an outer surface of a side of the diamond layer facing away from the integrated circuit has microstructures for increasing a heat dissipation surface area in contact with a fluid.
  10. 10. The integrated device of claim 9, wherein the microstructure is integrally formed with the diamond layer by a diamond vapor deposition process.
  11. 11. The integrated device of claim 9, wherein the microstructures are formed by etching or laser machining the diamond layer.
  12. 12. The integrated device of claim 9, wherein the microstructures comprise at least one selected from fins, grooves, micro-channels, or any combination thereof.
  13. 13. The integrated device of claim 12, wherein the fins have a height of 50-500 μm and a spacing between adjacent fins of 100-1000 μm, or the trenches have a width of 50-200 μm and a depth of 100-500 μm.
  14. 14. The integrated device of claim 1, wherein when the doped region is p-doped, the diamond layer is configured to attenuate microwave signals in a frequency range of 1-100GHz with the microwave attenuation increasing with increasing doping concentration of the doped region, or when the doped region is n-doped, the n-doping can be achieved by introducing a phosphorus source, a nitrogen source, or other potentially n-doped element during CVD growth.
  15. 15. The integrated device of claim 1, wherein when the doped region is p-type doped, the diamond layer is configured to attenuate microwave signals in the 1-100GHz frequency range by an amount of 0.1-5dB/mm that increases with increasing doping concentration of the doped region, or when the doped region is n-type doped, the amount of microwave attenuation in the frequency range is ≡0.3dB/mm, the n-type doping being achieved by introducing a phosphorus source, a nitrogen source, or other potentially n-type doping element during CVD growth.
  16. 16. An integrated circuit package comprising a circuit substrate, one or more integrated circuit chips, and an integrated device according to any one of claims 1 to 15.
  17. 17. A method for monitoring the temperature of an integrated circuit by means of an integrated device is characterized in that the integrated device according to any one of claims 1 to 15 is provided, b. If an intrinsic or near-intrinsic diamond layer is provided on the side of the diamond layer facing the integrated circuit, the intrinsic or near-intrinsic diamond layer on the surface of the electrode contact area is removed by means of an etching process, at least two conductive electrodes are prepared on the doped area of the diamond layer, if the diamond layer is not provided with the intrinsic or near-intrinsic diamond layer, at least two conductive electrodes are prepared directly on the doped area, and ohmic contact between the conductive electrodes and the doped area is ensured, c. The resistance value between the conductive electrodes is measured by means of a measuring device, d. The measured resistance value is converted into the temperature of the integrated device according to a pre-calibrated resistance-temperature dependence of the doped area.
  18. 18. The method of claim 17, wherein the conductive electrode is a silver electrode and the resistance-temperature dependence is used for temperature monitoring in the range of 25-150 ℃.
  19. 19. The method of claim 17, wherein the two conductive electrodes are symmetrically disposed at opposite ends of the doped region with an electrode spacing of 1/3 to 2/3 of the length of the diamond layer.

Description

Integrated device for integrated circuit and electromagnetic shielding and packaging structure thereof Technical Field The invention belongs to the technical field of semiconductor packaging, and particularly relates to an integrated device for heat dissipation, microwave attenuation and electromagnetic shielding of a high-performance integrated circuit and a packaging structure thereof. Background With the rapid development of artificial intelligence, 5G communication and high-performance computing, the power density and the operating frequency of high-performance chips such as artificial intelligence processors, GPUs, CPUs and the like are continuously improved. This results in two major technical challenges, firstly, the chip generates a lot of heat, which if not dissipated effectively, will lead to overheating of the chip, reduced performance, shortened life time, and even touching thermal throttling. Second, circuits operating at high frequencies generate and radiate electromagnetic waves, which may cause cross-talk between microwave components and electromagnetic interference to surrounding sensitive electronic equipment. Separate heat sinks, microwave absorbing materials and EMI shields are commonly used in the prior art to address these issues separately. However, such a separate solution is complex in structure, takes up a large space, and increases the cost and complexity of the package. Particularly in compact high density electronic systems, it is difficult to integrate these functional components simultaneously and guarantee their optimal performance. Therefore, there is a strong market demand for an integrated solution that is compact and efficient in performance, and that can solve the problems of heat dissipation, microwave attenuation and EMI shielding at the same time. Therefore, the present invention is directed to an integrated device for integrated circuit and electromagnetic shielding and a package structure thereof to solve the problems in the prior art. Disclosure of Invention The present invention is directed to an integrated circuit and an electromagnetic shielding integrated device and a packaging structure thereof, so as to solve the above-mentioned problems in the prior art. To achieve the above objects, the present invention provides an integrated device comprising a diamond layer configured to act as a heat spreader and a microwave attenuator, and a plurality of metal sidewalls connected to edges of the diamond layer for encapsulating the device over one or more integrated circuits. In order to achieve the above object, the present invention provides an integrated device for an integrated circuit and electromagnetic shielding and a packaging structure thereof, in which a diamond layer having a thickness of 1-10000 μm, the diamond layer including a p-type or n-type doped region configured to serve as both a heat sink and a microwave attenuator, and at least one sidewall structure surrounding an edge of the diamond layer, the sidewall structure being made of a thermally conductive metal material and being connected to the diamond layer by a fixed connection, the sidewall structure having a predetermined height adapted to a thickness of an integrated circuit to be packaged, for packaging the device over one or more integrated circuits, and defining a thermal interface material between the diamond layer and the integrated circuit having a thickness of 0.1-50 μm. Preferably, the doping concentration of the doped region in the diamond layer is in the range of 1E18 to 1E21 atoms/cm 3. Preferably, the thickness of the diamond layer is 100-500 μm. Preferably, the side wall structure comprises four metal side walls, and the heat conducting metal material is oxygen-free copper or aluminum alloy. Preferably, the fixed connection mode is braze welding connection. Preferably, the diamond wire further comprises a metal coating layer covering the outer surface of the diamond layer, wherein the thickness of the metal coating layer is 30-100 μm, and the metal coating layer is at least one of copper, silver, aluminum, nickel and gold. Preferably, the surface of the doped region is grown with an intrinsic or near-intrinsic diamond layer having a thickness of 10-50 μm, the near-intrinsic diamond layer being a diamond layer having an impurity concentration of less than 1E16 atoms/cm 3, and the diamond layer having a resistivity of not less than 1E10 Ω -cm at room temperature, wherein the near-intrinsic diamond layer is a diamond layer having an impurity concentration of less than 1E16 atoms/cm 3 for providing an electrical insulation function. Preferably, the diamond layer further comprises a metal heat sink disposed above the diamond layer, the heat sink having an effective heat dissipation surface area in contact with the cooling fluid of from 2 to 5 times the outer surface area of the diamond layer. Preferably, the outer surface of the diamond layer has a microstructure for increasing the heat d