CN-122028743-A - Semiconductor structure, manufacturing method thereof and semiconductor device

Abstract

A semiconductor structure, a method of manufacturing the same, and a semiconductor device. The semiconductor structure comprises a substrate, a functional layer and an alignment mark, wherein the substrate comprises a substrate and a light penetration layer, the light penetration layer is positioned on the substrate, the functional layer is positioned on the lower surface of the substrate, the alignment mark is arranged in the functional layer, a projection area of the light penetration layer on the functional layer covers a projection area of the alignment mark on the functional layer, and the refractive index of the light penetration layer is smaller than that of the substrate. The semiconductor structure has good performance.

Inventors

• ZHANG ZHONG

Assignees

• 长鑫科技集团股份有限公司

Dates

Publication Date

20260512

Application Date

20241108

Claims (16)

1. 1. A semiconductor structure, comprising: the substrate comprises a substrate and a light penetration layer, wherein the light penetration layer is positioned on the substrate; the functional layer is positioned on the lower surface of the substrate, and an alignment mark is arranged in the functional layer; The projection area of the light penetrating layer on the functional layer covers the projection area of the alignment mark on the functional layer, and the refractive index of the light penetrating layer is smaller than that of the substrate.
2. 2. The semiconductor structure of claim 1, wherein the light-transmissive layer extends through the substrate, the light-transmissive layer being in contact with the functional layer.
3. 3. The semiconductor structure of claim 1, wherein the substrate has a recess therein, the light-transmissive layer is located in the recess, the recess has a depth less than a thickness of the substrate, and the light-transmissive layer has a thickness greater than a distance from a bottom of the light-transmissive layer to the functional layer.
4. 4. The semiconductor structure of claim 1, wherein the light penetration layer is located between the film to be etched and the substrate.
5. 5. The semiconductor structure of claim 4, wherein the light transmissive layer comprises: A first light-transmitting layer on the substrate; the second light penetration layer is positioned on the first light penetration layer; the refractive index of the first light penetration layer is larger than that of the second light penetration layer, and the refractive index of the substrate is larger than that of the first light penetration layer.
6. 6. The semiconductor structure of claim 5, wherein a thickness of the first light-transmissive layer is less than a thickness of the substrate.
7. 7. The semiconductor structure of claim 5 or 6, wherein a difference between a refractive index of the first light transmissive layer and a refractive index of the second light transmissive layer is less than a difference between a refractive index of the substrate and a refractive index of the first light transmissive layer.
8. 8. The semiconductor structure of claim 5 or 6, wherein the light transmissive layer further comprises a third light transmissive layer, the third light transmissive layer being located on the second light transmissive layer, the third light transmissive layer having a refractive index that is less than a refractive index of the second light transmissive layer.
9. 9. The semiconductor structure of claim 8, wherein a difference between a refractive index of the second light transmissive layer and a refractive index of the third light transmissive layer is less than a difference between a refractive index of the first light transmissive layer and a refractive index of the second light transmissive layer.
10. 10. The semiconductor structure of claim 8, wherein a thickness of the first light transmissive layer is substantially equal to a thickness of the second light transmissive layer, a thickness of the third light transmissive layer is substantially equal to a thickness of the second light transmissive layer, and a sum of thicknesses of the first light transmissive layer, the second light transmissive layer, and the third light transmissive layer is less than a thickness of the substrate.
11. 11. A method of fabricating a semiconductor structure, comprising: providing a substrate, wherein a functional layer is arranged on the lower surface of the substrate, and an alignment mark is arranged in the functional layer; And forming a light penetration layer on the substrate, wherein a projection area of the light penetration layer on the functional layer covers a projection area of the alignment mark on the functional layer, and the refractive index of the light penetration layer is smaller than that of the substrate.
12. 12. The method of manufacturing according to claim 11, wherein the step of forming the light-transmitting layer comprises: a mask layer is arranged on the upper surface of the substrate, an opening is arranged in the mask layer, and the opening corresponds to the alignment mark; Performing thermal oxidation treatment on the substrate exposed by the opening to oxidize the substrate corresponding to the alignment mark into the light penetration layer; the mask layer is removed.
13. 13. The method of manufacturing according to claim 11, wherein the step of forming the light-transmitting layer comprises: forming a first light penetration layer on an upper surface of the substrate; forming a second light penetration layer on the first light penetration layer; forming the third light penetration layer on the second light penetration layer; The refractive index of the first light penetration layer is smaller than that of the substrate, the refractive index of the second light penetration layer is smaller than that of the first light penetration layer, and the refractive index of the third light penetration layer is smaller than that of the second light penetration layer.
14. 14. The method of manufacturing according to claim 11, wherein the step of forming the light-transmitting layer comprises: a mask layer is arranged on the upper surface of the substrate, an opening is arranged in the mask layer, and the opening corresponds to the alignment mark; etching the substrate exposed by the opening to form a groove; Depositing a dielectric material in the groove to form the light penetration layer; removing the mask layer; The thickness of the light penetration layer is larger than the distance from the bottom of the light penetration layer to the functional layer.
15. 15. The method of any one of claims 11-14, wherein the substrate is thinned prior to forming the light-transmissive layer.
16. 16. A semiconductor device, comprising: A first substrate; The light transmission layer is positioned on the substrate, the functional layer is positioned on the lower surface of the substrate, and an alignment mark is arranged in the functional layer; The projection area of the light penetrating layer on the functional layer covers the projection area of the alignment mark on the functional layer, and the refractive index of the light penetrating layer is smaller than that of the substrate.

Description

Semiconductor structure, manufacturing method thereof and semiconductor device Technical Field The embodiment of the disclosure relates to the technical field of semiconductors, in particular to a semiconductor structure, a manufacturing method thereof and a semiconductor device. Background With the development of semiconductor technology, a film layer needs to be fabricated on a wafer. However, due to the larger thickness of the wafer, there is a greater reflection of the light, resulting in a reduced alignment accuracy. Disclosure of Invention According to a first aspect of embodiments of the present disclosure, there is provided a semiconductor structure comprising: the substrate comprises a substrate and a light penetration layer, wherein the light penetration layer is positioned on the substrate; the functional layer is positioned on the lower surface of the substrate, and an alignment mark is arranged in the functional layer; The projection area of the light penetrating layer on the functional layer covers the projection area of the alignment mark on the functional layer, and the refractive index of the light penetrating layer is smaller than that of the substrate. In some embodiments, the light-transmissive layer extends through the substrate, the light-transmissive layer being in contact with the functional layer. In some embodiments, the substrate has a groove therein, the light-transmitting layer is located in the groove, the depth of the groove is smaller than the thickness of the substrate, and the thickness of the light-transmitting layer is greater than the distance from the bottom of the light-transmitting layer to the functional layer. In some embodiments, the light-transmissive layer is located between the film to be etched and the substrate. In some embodiments, the light-transmitting layer comprises: A first light-transmitting layer on the substrate; the second light penetration layer is positioned on the first light penetration layer; the refractive index of the first light penetration layer is larger than that of the second light penetration layer, and the refractive index of the substrate is larger than that of the first light penetration layer. In some embodiments, the thickness of the first light-transmissive layer is less than the thickness of the substrate. In some embodiments, the difference between the refractive index of the first light-transmissive layer and the refractive index of the second light-transmissive layer is less than the difference between the refractive index of the substrate and the refractive index of the first light-transmissive layer. In some embodiments, the light transmissive layer further comprises a third light transmissive layer on the second light transmissive layer, the third light transmissive layer having a refractive index less than a refractive index of the second light transmissive layer. In some embodiments, the difference between the refractive index of the second light-transmissive layer and the refractive index of the third light-transmissive layer is less than the difference between the refractive index of the first light-transmissive layer and the refractive index of the second light-transmissive layer. In some embodiments, the thickness of the first light-transmissive layer is substantially equal to the thickness of the second light-transmissive layer, the thickness of the third light-transmissive layer is substantially equal to the thickness of the second light-transmissive layer, and the sum of the thicknesses of the first light-transmissive layer, the second light-transmissive layer, and the third light-transmissive layer is less than the thickness of the substrate. According to a second aspect of embodiments of the present disclosure, there is provided a method of manufacturing a semiconductor structure, comprising: providing a substrate, wherein a functional layer is arranged on the lower surface of the substrate, and an alignment mark is arranged in the functional layer; And forming a light penetration layer on the substrate, wherein a projection area of the light penetration layer on the functional layer covers a projection area of the alignment mark on the functional layer, and the refractive index of the light penetration layer is smaller than that of the substrate. In some embodiments, the step of forming the light-transmitting layer includes: a mask layer is arranged on the upper surface of the substrate, an opening is arranged in the mask layer, and the opening corresponds to the alignment mark; Performing thermal oxidation treatment on the substrate exposed by the opening to oxidize the substrate corresponding to the alignment mark into the light penetration layer; the mask layer is removed. In some embodiments, the step of forming the light-transmitting layer includes: forming a first light penetration layer on an upper surface of the substrate; forming a second light penetration layer on the first light penetration layer; form