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CN-122028745-A - Electronic device and method for manufacturing the same

CN122028745ACN 122028745 ACN122028745 ACN 122028745ACN-122028745-A

Abstract

The invention provides an electronic device and a manufacturing method thereof. A substrate is provided. A first mask is provided on a first surface of the substrate. The first mask is patterned to form a first opening in the first mask, and the first opening exposes a corresponding portion of the substrate. A first energy is provided to perform a first modification step on a corresponding portion of the substrate to form a first modified region in the substrate. Providing a second energy to perform a second modifying step on the corresponding portion of the substrate to form a second modified region in the substrate, wherein the second modified region at least partially overlaps the first modified region.

Inventors

  • XU BOYUN
  • ZHUANG MENGXUAN

Assignees

  • 群创光电股份有限公司

Dates

Publication Date
20260512
Application Date
20250613
Priority Date
20241105

Claims (10)

  1. 1. A method of manufacturing an electronic device, comprising: providing a substrate; providing a first mask on a first surface of the substrate; Patterning the first mask to form a first opening in the first mask, wherein the first opening exposes a corresponding portion of the substrate; providing a first energy to perform a first modification step on the corresponding portion of the substrate to form a first modified region in the substrate, and Providing a second energy to perform a second modification step on the corresponding portion of the substrate to form a second modified region in the substrate; wherein the second modified region at least partially overlaps the first modified region.
  2. 2. The method according to claim 1, wherein the first modified region and the second modified region have an overlapping area in a cross-sectional view of the substrate, and the overlapping area is 5% to 20% of the first modified region.
  3. 3. The method of claim 1, wherein a ratio of the first energy to the second energy is 0.8 to 1.2.
  4. 4. An electronic device, comprising: a substrate having a through hole, wherein in a cross-sectional view of the substrate, the wall of the through hole has a wavy profile extending along a normal direction of the substrate, and And a conductive layer disposed in the through hole.
  5. 5. The electronic device of claim 4, wherein the wavy profile comprises a first protrusion, a concave portion and a second protrusion disposed sequentially along the normal direction, the first protrusion and the second protrusion protruding toward the through hole in a radial direction of the through hole, and the concave portion being recessed away from the through hole in the radial direction of the through hole.
  6. 6. The electronic device of claim 4, wherein the hole wall of the through hole has a surface roughness, wherein the surface roughness is greater than or equal to 0.1 microns and less than or equal to 1.5 microns.
  7. 7. The electronic device of claim 4, wherein the substrate has a first surface and a second surface opposite to each other, the through hole has a first opening on the first surface, the through hole has a second opening on the second surface, the first opening has a first aperture D1, the second opening has a second aperture D2, and the following conditions are satisfied: |D2-D1|≤3μm。
  8. 8. The electronic device of claim 4, wherein the substrate has a first surface and a second surface opposite to each other, the through hole has a first opening on the first surface, the through hole has a second opening on the second surface, the electronic device further comprises a buffer layer, and the buffer layer covers at least one of the first surface, the second surface and the hole wall of the through hole.
  9. 9. The electronic device of claim 4, further comprising: a circuit structure disposed on the substrate, and The first electronic unit is arranged on the circuit structure and is electrically connected with the circuit structure.
  10. 10. The electronic device of claim 9, further comprising: The carrier plate is electrically connected with the circuit structure, and the circuit structure and the carrier plate are respectively positioned on different sides of the substrate in the depth direction of the through hole.

Description

Electronic device and method for manufacturing the same Technical Field The present invention relates to an electronic device and a method for manufacturing the same, and more particularly, to an electronic device including a substrate having a through hole and a method for manufacturing the same. Background In the field of integrated circuits, depending on the application and requirements, the electronic device may need to be configured with larger dimensions (e.g., larger area) and more layers, such as carrier boards used in the manufacturing process, substrate structures as part of the product, and redistribution layers. For example, the carrier board with large area is used for production, which is beneficial to improving the output rate of the packaging unit or reducing the manufacturing cost. However, as the size of the electronic device increases and the number of layers increases, the degree of warpage (warpage) of the electronic device also increases substantially. In order to reduce the degree of warpage, a substrate having high rigidity or insulation may be used. However, when a via hole is formed in a substrate having high rigidity or insulation, the quality of the via hole is easily affected by poor quality, and the yield of the electronic device is further affected. Disclosure of Invention The invention aims to provide an electronic device and a manufacturing method thereof. The invention provides a manufacturing method of an electronic device, which comprises the steps of providing a substrate, providing a first mask on a first surface of the substrate, patterning the first mask to form a first opening in the first mask, wherein the first opening exposes a corresponding part of the substrate, providing first energy to perform a first modification step on the corresponding part of the substrate to form a first modified region in the substrate, and providing second energy to perform a second modification step on the corresponding part of the substrate to form a second modified region in the substrate, wherein the second modified region at least partially overlaps the first modified region. The invention further provides an electronic device comprising a substrate and a conductive layer. The substrate is provided with a perforation, wherein in a cross-section of the substrate, the wall of the perforation is provided with a wavy outline, the wavy outline extends along the normal direction of the substrate, and the conductive layer is arranged in the perforation. Drawings Fig. 1, fig. 2, fig. 3, fig. 4, and fig. 5 are schematic sectional views illustrating steps of a method for manufacturing an electronic device according to an embodiment of the invention. Fig. 6 is an enlarged schematic view of the portion a in fig. 4. Fig. 7 is a schematic sectional view illustrating steps of a method for manufacturing an electronic device according to another embodiment of the invention. Fig. 8 is a schematic sectional view illustrating steps of a method for manufacturing an electronic device according to another embodiment of the present invention. Fig. 9 is a schematic cross-sectional view of an electronic device according to an embodiment of the invention. Fig. 10 is a schematic cross-sectional view of an electronic device according to another embodiment of the invention. Reference numerals illustrate 1A, 1B-electronic devices; 10, 100, 610-substrate; 11-the counterpart; 11A, 11B, 11C, 11D, 11E-modified regions, 20, 30-masks, 21, 31, OP1, OP 2-openings, 40, 120-conductive layers, 121-seed layers, 122, 612, C1, C2, C3-conductive layers, 130-marking elements, 140, 650-buffer layers, 150-planarization layers, 200, 620, 630-circuit structures, 310, 320, 550-electronic units, 410, 420-encapsulation layers, 430-adhesive layers, 500, 600-carrier plates, 640-protective layers, 700-heat sinks, 710-cap portions, 720-sidewall portions, A1-portions, AP1, AP 2-edge structures, AA 1-overlap areas, C1A, C1C-connection elements, CC1, CC2, CC3, RP 1-recesses, CE1, CE2, CE 3-junction elements, CM1, CM 2-conductive elements, C1B, CP1, CP2, CP3, CP4, CP5, CV 8-junction pads, CV2, LS3, LS1, C1, CC2, C1, C2, CP1, CP3, CP1, CP2, CPC 1, CP2, CP1, CP2, CPC 1, CP2, CP3, CP1, CP3, CPC 1, CP2, CP3, CPC 3C 35, CPC C CP3 CPCV 3 CPCPCPCPCV 3 CPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCPCP-CP CPCP-CP-C-2-2. Detailed Description Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts. Certain terms are used throughout the description and following claims to refer to particular components. Those of ordinary skill in the art will appreciate that electronic device manufacturers may refer to a component by different names. The present invention is not intended to distinguish between components that dif