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CN-122028746-A - Glass substrate manufacturing method, glass substrate and packaging structure

CN122028746ACN 122028746 ACN122028746 ACN 122028746ACN-122028746-A

Abstract

The application relates to a manufacturing method of a glass substrate, the glass substrate and a packaging structure, wherein the manufacturing method of the glass core plate comprises the following steps that the glass core plate is provided, through holes are formed in the glass core plate in a penetrating manner along the thickness direction of the glass core plate, each through hole comprises a first through hole part, a second through hole part and a third through hole part which are axially arranged along the through holes, and the second through hole part is connected between the first through hole part and the third through hole part; the method includes forming a first through hole portion, forming a second conductive portion in the second through hole portion, forming a first conductive portion in the first through hole portion, the first conductive portion being connected to a side of the second conductive portion facing the first through hole portion, forming a third conductive portion in the third through hole portion, the third conductive portion being connected to a side of the second conductive portion facing the third through hole portion. In this way, in the process of manufacturing the second conductive part, the first through hole part and the third through hole part are kept smooth, the flow exchange of the electroplating solution to the second through hole part is not influenced, the bridged second conductive part is formed in the second through hole part, and the filling difficulty of the conductive structure is reduced.

Inventors

  • ZHOU YANXU

Assignees

  • 苏州国显创新科技有限公司

Dates

Publication Date
20260512
Application Date
20260415

Claims (10)

  1. 1. The manufacturing method of the glass substrate is characterized by comprising the following steps of: Providing a glass core plate, wherein a through hole is formed in the glass core plate in a penetrating manner along the thickness direction of the glass core plate, the through hole comprises a first through hole part, a second through hole part and a third through hole part which are axially arranged along the through hole, and the second through hole part is connected between the first through hole part and the third through hole part; Forming a second conductive portion in the second via portion; Forming a first conductive part in the first through hole part, wherein the first conductive part is connected with one surface of the second conductive part facing the first through hole part; and forming a third conductive part in the third through hole part, wherein the third conductive part is connected with one surface of the second conductive part facing the third through hole part.
  2. 2. The method of manufacturing a glass substrate according to claim 1, wherein the step of forming a second conductive portion in the second through hole portion includes: Forming a seed layer on at least an inner wall of the through hole, the seed layer including a second seed layer covering an inner wall of the second through hole portion; electroplating the second conductive part, wherein the second conductive part grows on the surface of the second seed layer and fills the space formed by the second seed layer in the second through hole.
  3. 3. The method of manufacturing a glass substrate according to claim 2, wherein the seed layer further comprises a first seed layer and a third seed layer covering the inner wall of the first via portion and the inner wall of the third via portion, respectively, and the step of forming the seed layer at least on the inner wall of the via further comprises the steps of: And forming a buffer layer in a space formed by encircling the seed layers in the through hole, wherein the buffer layer covers the first seed layer and the third seed layer and exposes the second seed layer.
  4. 4. The method of manufacturing a glass substrate according to claim 3, wherein the diameter of the first via hole portion and the diameter of the third via hole portion are larger than the diameter of the second via hole portion, and wherein the step of forming a buffer layer in a space surrounded by the seed layer in the via hole comprises: filling a buffer material in a space formed by enclosing the seed layer in the through hole; And forming a buffer layer by penetrating the buffer material along the axial direction of the through hole so as to expose the second seed layer and covering the first seed layer and the third seed layer with the rest buffer material.
  5. 5. The method according to claim 4, wherein the step of etching the buffer material along the axial direction of the through hole includes: Etching and forming a first via hole on the buffer material in the first via hole part, wherein the buffer material remained in the first via hole part covers the first seed layer and forms a first buffer layer; etching and forming a third via hole on the buffer material in the third via hole part, wherein the buffer material remained in the third via hole part covers the third seed layer and forms a third buffer layer; Etching a second via hole on the buffer material in the second via hole part, removing the buffer material in the second via hole part and exposing the second seed layer, wherein the second via hole is communicated with the first via hole and the third via hole to form the via hole, the first buffer layer and the third buffer layer are combined to form the buffer layer, and the second via hole and the second seed layer are overlapped in a space formed by the second via hole part in a surrounding mode.
  6. 6. The method of manufacturing a glass substrate according to claim 5, wherein the step of forming a first conductive portion in the first via portion and a third conductive portion in the third via portion comprises: Electroplating the first conductive part, wherein the first conductive part grows from the surface of the second conductive part facing the first via hole and fills the first via hole; Electroplating the third conductive portion, wherein the third conductive portion grows from the surface of the second conductive portion facing the third via hole and fills the third via hole.
  7. 7. A glass substrate, comprising: The glass core plate is provided with a through hole in a penetrating manner along the thickness direction of the glass core plate, the through hole comprises a first through hole part, a second through hole part and a third through hole part which are axially arranged along the glass core plate, and the second through hole part is connected between the first through hole part and the third through hole part; The conductive structure comprises a first conductive part, a second conductive part and a third conductive part, wherein the second conductive part is filled in the second through hole part, the first conductive part is connected with one surface of the second conductive part facing the first through hole part and is positioned in the first through hole part, and the third conductive part is connected with one surface of the second conductive part facing the second through hole part and is positioned in the third through hole part.
  8. 8. The glass substrate according to claim 7, further comprising a seed layer comprising at least a second seed layer covering an inner wall of the second via portion; The second conductive part is formed by electroplating growth of the second seed layer, the second conductive part is filled in a space formed by the second seed layer and the second through hole part, the first conductive part is formed by electroplating growth of the surface of the second conductive part facing the first through hole part, and the third conductive part is formed by electroplating growth of the surface of the second conductive part facing the third through hole part.
  9. 9. The glass substrate according to claim 8, wherein the diameter of the first via portion and the diameter of the third via portion are both larger than the diameter of the second via portion, the seed layer further comprises a first seed layer and a third seed layer covering the inner walls of the first via portion and the third via portion, respectively, the glass substrate further comprises a buffer layer covering the first seed layer and the third seed layer, and the second seed layer is exposed with respect to the buffer layer; The buffer layer comprises a first buffer layer and a third buffer layer which respectively cover the first seed layer and the third seed layer, the first buffer layer is enclosed in the first through hole part to form a first via hole, the first conductive part is filled in the first via hole, the third buffer layer is enclosed in the third through hole part to form a third via hole, and the third conductive part is filled in the third via hole.
  10. 10. A package structure comprising the glass substrate manufactured by the manufacturing method of any one of claims 1 to 6, or the glass substrate of any one of claims 7 to 9.

Description

Glass substrate manufacturing method, glass substrate and packaging structure Technical Field The present application relates to the field of semiconductor technology, and in particular, to a method for manufacturing a glass substrate, and a package structure. Background With the development of high performance computing, artificial intelligence, 5G communication, and other technologies, semiconductor chips are evolving toward higher integration, higher operation speed, higher power density, and smaller size, and the requirements for a carrier substrate that carries the chips and provides electrical interconnection and mechanical support are also increasing. The traditional bearing substrate mainly adopts an organic substrate, and the performance of the organic substrate in the aspects of flatness, fine circuits, signal transmission rate and the like can not meet the requirements of the bearing substrate. Glass substrates are considered as a replacement for organic substrates, supporting the next generation of advanced packaging, due to their good physical, chemical and electrical properties. However, the glass substrate is difficult to industrially prepare, and large-scale application of the glass substrate is restricted. Disclosure of Invention Accordingly, it is necessary to provide a method for manufacturing a glass substrate, and a package structure, which solve the technical problem that the glass substrate is difficult to industrially manufacture. In a first aspect, the present application provides a method for manufacturing a glass substrate, the method for manufacturing a glass core board comprising the steps of: Providing a glass core plate, wherein a through hole is formed in the glass core plate in a penetrating manner along the thickness direction of the glass core plate, the through hole comprises a first through hole part, a second through hole part and a third through hole part which are axially arranged along the through hole, and the second through hole part is connected between the first through hole part and the third through hole part; Forming a second conductive portion in the second via portion; Forming a first conductive part in the first through hole part, wherein the first conductive part is connected with one surface of the second conductive part facing the first through hole part; and forming a third conductive part in the third through hole part, wherein the third conductive part is connected with one surface of the second conductive part facing the third through hole part. In some of these embodiments, the step of forming a second conductive portion in the second via portion includes: Forming a seed layer on at least an inner wall of the through hole, the seed layer including a second seed layer covering an inner wall of the second through hole portion; electroplating the second conductive part, wherein the second conductive part grows on the surface of the second seed layer and fills the space formed by the second seed layer in the second through hole. In some of these embodiments, the seed layer further includes a first seed layer and a third seed layer covering the first via portion inner wall and the third via portion inner wall, respectively, the step of forming a seed layer on at least the via inner wall further includes the steps of: forming a buffer layer in a space formed by encircling the seed layers in the through hole, wherein the buffer layer covers the first seed layer and the third seed layer and exposes the second seed layer; Optionally, the height of the second seed layer along the thickness direction of the glass core plate is 10um-20um. In some embodiments, the diameter of the first through hole part and the diameter of the third through hole part are larger than the diameter of the second through hole part, and the step of forming a buffer layer in a space formed by enclosing the seed layer in the through hole comprises the following steps: filling a buffer material in a space formed by enclosing the seed layer in the through hole; Forming a through hole along the axial direction of the through hole for penetrating the buffer material so as to expose the second seed layer, and covering the first seed layer and the third seed layer by the rest of the buffer material to form the buffer layer; Optionally, in a direction in which the first through hole portion points to the third through hole portion, a diameter of the first through hole portion gradually decreases; the diameter of the third through hole part gradually decreases in the direction that the third through hole part points to the first through hole part; Optionally, the diameter of the second through hole part is gradually reduced and then gradually increased in the direction that the first through hole part points to the second through hole part, the maximum diameter of the second through hole part towards one end of the first through hole part is the same as the minimum diameter of the first throug