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CN-122028755-A - Method for manufacturing semiconductor structure

CN122028755ACN 122028755 ACN122028755 ACN 122028755ACN-122028755-A

Abstract

The application provides a method for manufacturing a semiconductor structure. The manufacturing method comprises the steps of forming a bonding layer on one side of a carrier plate, forming a rewiring structure on one side, far away from the carrier plate, of the bonding layer, attaching an electric element on one side, far away from the bonding layer, of the rewiring structure, enabling electrodes of the electric element to be electrically connected with the rewiring structure, forming a plastic sealing layer, at least sealing the side face of the electric element, heating the obtained structure, and enabling the bonding layer to be melted, so that the bonding layer and the carrier plate are separated from the rewiring structure.

Inventors

  • ZHOU WENWU

Assignees

  • 华润润安科技(重庆)有限公司

Dates

Publication Date
20260512
Application Date
20241031

Claims (10)

  1. 1. A method of manufacturing a semiconductor structure, the method comprising: forming a bonding layer on one side of the carrier plate; forming a rewiring structure on one side of the bonding layer away from the carrier plate; attaching an electrical component to a side of the rewiring structure remote from the bonding layer, and electrically connecting an electrode of the electrical component with the rewiring structure; forming a plastic layer, wherein the plastic layer at least encapsulates the side surface of the electrical element; and heating the obtained structure to melt the bonding layer so as to separate the bonding layer and the carrier plate from the rewiring structure.
  2. 2. The method of manufacturing a semiconductor structure according to claim 1, wherein after the bonding layer is formed on the side of the carrier and before the rewiring structure is formed on the side of the bonding layer away from the carrier, the method further comprises forming an insulating layer on the side of the bonding layer away from the carrier; the rewiring structure is formed on one side of the insulating layer away from the carrier plate.
  3. 3. The method of manufacturing a semiconductor structure according to claim 2, wherein after the heating the obtained structure to melt the bonding layer so that the bonding layer and the carrier are separated from the rewiring structure, the method further comprises: Forming an opening through the insulating layer, the opening exposing a portion of a surface of the rewiring structure; And forming a conductive structure on one side of the insulating layer away from the rewiring structure, wherein the conductive structure is electrically connected with the rewiring structure through the opening.
  4. 4. The method of manufacturing a semiconductor structure according to claim 1, wherein the mounting the electrical component on the side of the rewiring structure remote from the bonding layer comprises: Arranging solder on one side of the rewiring structure away from the carrier plate; placing the electrical component on a side of the solder remote from the rewiring structure; the electrical component is soldered to the rewiring structure by solder.
  5. 5. The method of manufacturing a semiconductor structure according to claim 4, wherein a melting point of the bonding layer is greater than a melting point of the solder.
  6. 6. The method of manufacturing a semiconductor structure according to claim 4, wherein before the electrical component is soldered to the rewiring structure by solder, the mounting of the electrical component on a side of the rewiring structure remote from the bonding layer further comprises: A first magnetic element is arranged on one side of the rewiring structure far away from the carrier plate, a second magnetic element is arranged on one side of the carrier plate far away from the rewiring structure, at least one of the first magnetic element and the second magnetic element is a magnetic element which can generate a magnetic field when electrified so as to lead the other magnetic element to be attracted in the magnetic field when electrified, or And clamping the rewiring structure, the carrier plate and the structure between the rewiring structure and the carrier plate by adopting a clamp.
  7. 7. The method of manufacturing a semiconductor structure according to claim 6, wherein the mounting of the electrical component on the side of the rewiring structure remote from the bonding layer further comprises forming a layer of insulating material that covers at least a portion of the side of the semiconductor structure; The first magnetic piece is arranged on one side of the rewiring structure, which is far away from the carrier plate, and the first magnetic piece is arranged on the edge area of the surface of the insulating material layer, which is far away from the carrier plate.
  8. 8. The method of manufacturing a semiconductor structure according to claim 4, wherein the rewiring structure includes a rewiring layer and a plurality of conductive bumps located on a side of the rewiring layer away from the carrier, each of the conductive bumps being electrically connected to the rewiring layer, a surface of each of the conductive bumps away from the carrier being provided with solder, each of the conductive bumps being soldered to one of the electrodes of the electrical component.
  9. 9. The method of claim 1, wherein the bonding layer is made of metal.
  10. 10. The method of manufacturing a semiconductor structure according to claim 1, wherein the electrical component comprises at least one of an inductance, a resistance, a capacitance, and a chip, and/or, The thickness of the bonding layer ranges from 5 mu m to 10 mu m.

Description

Method for manufacturing semiconductor structure Technical Field The present disclosure relates to semiconductor technology, and more particularly, to a method for manufacturing a semiconductor structure. Background In a common semiconductor packaging technology, for example, in a chip packaging technology, a rewiring layer can be firstly manufactured, then a chip is mounted on the rewiring layer, and specifically the method comprises the following technical processes of firstly forming the rewiring layer on a silicon substrate, then mounting the chip on the rewiring layer, enabling a welding pad of the chip to be electrically connected with the rewiring layer, then forming a plastic sealing layer for encapsulating the chip, and then removing the silicon substrate by adopting a mask process. In the above packaging technology, the time required for grinding the silicon substrate is long, resulting in a long period of the preparation process, which is not beneficial to improving the preparation efficiency of the semiconductor packaging product. Disclosure of Invention The embodiment of the application provides a manufacturing method of a semiconductor structure. The manufacturing method comprises the following steps: forming a bonding layer on one side of the carrier plate; forming a rewiring structure on one side of the bonding layer away from the carrier plate; attaching an electrical component to a side of the rewiring structure remote from the bonding layer, and electrically connecting an electrode of the electrical component with the rewiring structure; forming a plastic layer, wherein the plastic layer at least encapsulates the side surface of the electrical element; and heating the obtained structure to melt the bonding layer so as to separate the bonding layer and the carrier plate from the rewiring structure. In one embodiment, after the bonding layer is formed on one side of the carrier, and before the rewiring structure is formed on one side of the bonding layer away from the carrier, the method for manufacturing the semiconductor structure further comprises forming an insulating layer on one side of the bonding layer away from the carrier; the rewiring structure is formed on one side of the insulating layer away from the carrier plate. In one embodiment, after the heating the obtained structure to melt the bonding layer to separate the bonding layer and the carrier from the rewiring structure, the method for manufacturing the semiconductor structure further includes: Forming an opening through the insulating layer, the opening exposing a portion of a surface of the rewiring structure; And forming a conductive structure on one side of the insulating layer away from the rewiring structure, wherein the conductive structure is electrically connected with the rewiring structure through the opening. In one embodiment, the attaching the electrical component on a side of the rewiring structure remote from the bonding layer comprises: Arranging solder on one side of the rewiring structure away from the carrier plate; placing the electrical component on a side of the solder remote from the rewiring structure; the electrical component is soldered to the rewiring structure by solder. In one embodiment, the bonding layer has a melting point greater than the melting point of the solder. In one embodiment, before the soldering the electrical component to the rewiring structure by solder, the mounting the electrical component on the rewiring structure on a side away from the bonding layer further comprises: A first magnetic element is arranged on one side of the rewiring structure far away from the carrier plate, a second magnetic element is arranged on one side of the carrier plate far away from the rewiring structure, at least one of the first magnetic element and the second magnetic element is a magnetic element which can generate a magnetic field when electrified so as to lead the other magnetic element to be attracted in the magnetic field when electrified, or And clamping the rewiring structure, the carrier plate and the structure between the rewiring structure and the carrier plate by adopting a clamp. In one embodiment, the method of manufacturing the semiconductor structure further comprises forming a layer of insulating material that encapsulates at least a portion of the sides of the semiconductor structure before the electrical component is mounted on the side of the rewiring structure remote from the bonding layer; The first magnetic piece is arranged on one side of the rewiring structure, which is far away from the carrier plate, and the first magnetic piece is arranged on the edge area of the surface of the insulating material layer, which is far away from the carrier plate. In one embodiment, the rewiring structure comprises a rewiring layer and a plurality of conductive blocks positioned on one side of the rewiring layer away from the carrier plate, wherein each conductive block is electrically c