CN-122028756-A - Stepped through hole target structure, processing method, terminal and medium

CN122028756ACN 122028756 ACN122028756 ACN 122028756ACN-122028756-A

Abstract

The utility model provides a cascaded through-hole mark target structure, processing method, terminal and medium, belong to IC carrier plate technical field, cascaded through-hole mark target structure is including setting up the through-hole on the IC carrier plate base member, the top synchronous machining of through-hole has first blind hole, the below processing of through-hole has the second blind hole, first blind hole and second blind hole are located carrier plate upper and lower both sides surface respectively, first blind hole and second blind hole all set up with the through-hole is coaxial, the aperture of through-hole is less than the aperture of first blind hole and second blind hole, the aperture of first blind hole and second blind hole is the same, first blind hole and second blind hole are used for the optics counterpoint discernment of exposure machine. The coaxial and equal-aperture upper and lower blind holes are matched with a through hole structure smaller than the aperture of the blind hole, so that the through transmission of an interlayer geometric reference is realized, physical separation is formed through aperture difference, the conduction interference of processing energy between layers is reduced, the identification consistency and stability of a double-sided target are ensured, and accurate alignment reference is provided for multilayer graph superposition.

Inventors

LIN YINGZHENG
ZHAO XINLEI
WANG GUITAO
WANG JIE
SHE CHENGYI
MA JIFENG
LI ZHENLAI

Assignees

清河电子科技(山东)有限责任公司

Dates

Publication Date: 20260512
Application Date: 20260210

Claims (10)

1. The utility model provides a ladder type through hole mark target structure, including setting up through-hole (1) on the support plate base member, its characterized in that, the top synchronous processing of through-hole (1) has first blind hole (2), the below processing of through-hole (1) has second blind hole (3), first blind hole (2) and second blind hole (3) are located support plate upper and lower both sides surface respectively, first blind hole (2) and second blind hole (3) all set up with through-hole (1) coaxial, the aperture of through-hole (1) is less than the aperture of first blind hole (2) and second blind hole (3), the aperture of first blind hole (2) and second blind hole (3) is the same, first blind hole (2) and second blind hole (3) are used for the optics counterpoint discernment of exposure machine.
2. The stepped through-hole target structure according to claim 1, characterized in that the junction of the through-hole (1) with the first blind hole (2) and the second blind hole (3) is provided with an energy-attenuating transition zone (4), the energy-attenuating transition zone (4) having a smooth arc-shaped profile.
3. The stepped through-hole target structure of claim 2, wherein the energy-attenuating transition region (4) on the upper surface of the carrier plate is formed by one-shot forming with a composite laser, and the energy-attenuating transition region (4) on the lower surface of the carrier plate is formed by two-shot positioning processing.
4. The stepped through-hole target structure according to claim 1, wherein the hole bottom surfaces of the first blind hole (2) and the second blind hole (3) are provided with a reflective layer or a copper plating layer, and the hole edges of the first blind hole (2) and the second blind hole (3) are provided with an anti-corrosion protection layer or an anti-oxidation coating.
5. A method of machining the stepped through-hole target structure of any one of claims 1-4, comprising: Step 1, determining an initial center point of a target on a carrier plate and establishing an upper coaxial coordinate system and a lower coaxial coordinate system; Step 2, forming a through hole (1) and a first blind hole (2) by composite laser at one time; Step 3, retesting and positioning the center of the through hole (1) and processing a second blind hole (3); and 4, surface metallization treatment.
6. The processing method according to claim 5, wherein in the step 2, a coaxially overlapped composite laser beam is adopted, the center of the composite laser beam is a small-diameter strong energy beam, the periphery of the composite laser beam is a large-diameter weak energy beam, the laser head vertically moves down along the Z axis from the upper side of the carrier plate, one drill is downwards used for penetrating through the carrier plate, so that the central strong energy beam directly ablates the whole thickness material of the carrier plate to form a through hole (1), meanwhile, the peripheral weak energy beam synchronously ablates the surface layer material on the upper surface of the carrier plate to form a first blind hole (2), and an energy attenuation transition zone (4) is synchronously formed at the joint of the through hole (1) and the first blind hole (2).
7. The processing method according to claim 5, wherein in step 3, after the processing of the through hole (1) is completed, three feature points are uniformly selected at the edge of the through hole (1) and coordinates of the three feature points are measured, and the actual center coordinates of the through hole (1) are calculated based on the three feature points; after the actual center coordinates of the through holes (1) are determined, calculating the coordinate drift amount, and correcting a coordinate system based on the actual center coordinates of the through holes (1) so that the machining reference of the second blind holes (3) is consistent with the actual center coordinates of the through holes (1); And after the coordinate system is corrected, machining a second blind hole (3) along the corrected center point.
8. A method according to claim 7, characterized in that the machining path of the second blind hole (3) is scanned by a spiral from outside to inside, and that the laser energy decreases during the machining along the machining path.
9. A terminal, comprising: The memory is used for storing a machining program of the stepped through hole target structure; A processor for performing the steps of the processing method of claim 5 when executing a stepped via target structure.
10. A computer-readable storage medium storing computer instructions that, when read by a computer in the storage medium, perform the processing method of claim 5.

Description

Stepped through hole target structure, processing method, terminal and medium Technical Field The invention relates to the technical field of IC carrier plates, in particular to a stepped through hole target structure, a processing method, a terminal and a medium. Background At present, the IC carrier is used as a key carrier for high-density interconnection packaging, and the industry is developing towards multilayering, thinning and high-precision alignment. In the manufacturing process of the IC carrier plate, lamination operations such as exposure, etching, drilling, lamination and the like are required to be carried out for many times, and the geometric superposition precision of each layer of circuit pattern directly determines the yield and the conduction reliability of the product. The exposure machine and the laser drilling equipment commonly adopt an optical alignment target as a reference so as to ensure the accurate matching of the multilayer patterns. However, as the line width is reduced to the micron level, the thickness and the number of layers are increased, the conventional single through hole or blind hole target cannot meet the requirement of mass production of the IC carrier in the aspects of recognition precision and interlayer penetrability, and the common through hole target in the prior art directly penetrates through the upper layer and the lower layer to form a geometric reference through laser, so that interlayer penetrability can be realized. In the current technology, firstly processing the exposure target of the A face, then processing the exposure target of the B face until penetrating into a through hole target, wherein the target edge of the A face is easily influenced by the laser energy of the target of the B face after processing, and the phenomenon that the edge of the A face is burnt and then blurred is caused, so that the grabbing alignment of the exposure target is influenced, and further, precision errors occur. Disclosure of Invention In order to solve the technical problems that the prior laser drilling machine in the background technology usually processes a target of the A surface firstly and then processes a through hole formed by penetrating the B surface, and high-energy laser on the post processing side easily ablates an edge area on the pre-processing side to influence exposure alignment identification, the invention provides a stepped through hole target structure, a processing method, a terminal and a medium. The technical scheme of the invention is as follows: The invention provides a stepped through hole target structure, which comprises a through hole arranged on an IC carrier substrate, wherein a first blind hole is synchronously processed above the through hole, a second blind hole is processed below the through hole, the first blind hole and the second blind hole are respectively positioned on the upper side surface and the lower side surface of the carrier substrate, the first blind hole and the second blind hole are coaxially arranged with the through hole, the aperture of the through hole is smaller than that of the first blind hole and the second blind hole, the aperture of the first blind hole is the same as that of the second blind hole, and the first blind hole and the second blind hole are used for optical alignment identification of an exposure machine. The stepped through hole target structure forms independent double-sided optical identification areas through coaxial design and aperture difference layout of the through holes and the upper and lower blind holes, the through holes are used as penetrating interlayer references to ensure the consistency of multilayer superposition, the blind holes with larger apertures can provide clear identification outlines, meanwhile, direct action of post-processing lasers on the edges of the formed targets is avoided, the edges of the double-sided targets are kept complete and sharp, the accuracy of alignment grabbing of an exposure machine is remarkably improved, the coaxial and equal-aperture upper and lower blind holes are used for enabling the exposure machine to obtain uniform specification identification targets from any surface of a carrier plate, and the through hole structure smaller than the aperture of the blind holes is matched, so that penetrating transmission of interlayer geometric references is realized, physical barriers are formed through aperture differences, conduction interference of processing energy between layers is reduced, the consistency and stability of double-sided target identification are ensured, and accurate alignment reference is provided for multilayer graph superposition. Preferably, the junction of through-hole and first blind hole and second blind hole is equipped with energy attenuation transition district, and energy attenuation transition district has smooth arc profile, can make laser energy realize gradient transmission in the interface department of through-ho