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CN-122029043-A - Gas barrier film and method of manufacturing the same

CN122029043ACN 122029043 ACN122029043 ACN 122029043ACN-122029043-A

Abstract

In a gas barrier film comprising a base layer and a gas barrier layer formed on the base layer and containing silicon oxide, the ratio of the peak area of an absorption peak from 3100cm ‑1 to 3700cm ‑1 inclusive of an OH bond to the peak area of an absorption peak from 720cm ‑1 to 1320cm ‑1 inclusive of a Si-O-Si bond in the infrared absorption spectrum of the gas barrier layer from the front side is 0.25 or less.

Inventors

  • Spade shaped friend
  • MATSUHISA KENJI
  • GU ZHUOXING

Assignees

  • 凸版控股株式会社

Dates

Publication Date
20260512
Application Date
20241018
Priority Date
20231019

Claims (12)

  1. 1. A gas barrier film is provided with: Substrate layer A gas barrier layer formed on the base material layer and containing silicon oxide, In the infrared absorption spectrum of the gas barrier layer from the surface side, the ratio of the peak area of the absorption peak from 3100cm -1 to 3700cm -1 of the OH bond to the peak area of the absorption peak from 720cm -1 to 1320cm -1 of the Si-O-Si bond is 0.25 or less.
  2. 2. The gas barrier film of claim 1, wherein, In the infrared absorption spectrum of the gas barrier layer from the surface side, the ratio of the peak area of the absorption peak from 830cm to -1 cm to 910cm -1 from the Si-OH bond to the peak area of the absorption peak from 720cm to -1 to 1320cm -1 from the Si-O-Si bond is 0.025 or less.
  3. 3. The gas barrier film according to claim 1 or 2, wherein, In the infrared absorption spectrum of the gas barrier layer from the surface side, the ratio of the peak area of the absorption peak from 2100cm -1 to 2200cm -1 inclusive from the Si-H bond to the peak area of the absorption peak from 720cm -1 to 1320cm -1 inclusive from the Si-O-Si bond is 0.003 or less.
  4. 4. The gas barrier film of claim 1, wherein, The value of the ratio b/a of the peaks of Si 3+ 、Si 2+ 、Si + and Si (b=si 3 + 、Si 2+ 、Si + and Si) to the total peak of Si2p peaks (a=si 4+ 、Si 3+ 、Si 2+ 、Si + and Si) measured by X-ray photoelectron spectroscopy (XPS) on the surface of the gas barrier layer is greater than 0.122.
  5. 5. The gas barrier film of claim 1, wherein, The ratio (O/Si) of the atomic number of oxygen (O) to the atomic number of silicon (Si) measured by X-ray photoelectron spectroscopy (XPS) is 1.41 to 1.9.
  6. 6. The gas barrier film of claim 1, wherein, The thickness of the gas barrier layer is 10nm to 60 nm.
  7. 7. The gas-barrier film according to claim 1, And an outer coating layer formed on the gas barrier layer.
  8. 8. The gas barrier film of claim 7, wherein, The overcoat layer includes at least 1 of a metal alkoxide, a hydrolysate of the metal alkoxide, a reaction product of the metal alkoxide, and a reaction product of the hydrolysate of the metal alkoxide, and a water-soluble polymer.
  9. 9. The gas barrier film of claim 7, wherein, The overcoat layer includes at least 1 of a silane coupling agent, a hydrolysate of the silane coupling agent, a reaction product of the silane coupling agent, and a reaction product of the hydrolysate of the silane coupling agent.
  10. 10. The gas-barrier film according to claim 1, Further comprises a primer layer provided between the base material layer and the gas barrier layer, The primer layer includes at least 1 of a thermosetting resin, a thermoplastic resin, an ultraviolet curable resin, and an electron beam curable resin.
  11. 11. The gas-barrier film according to claim 1, Further comprises a primer layer provided between the base material layer and the gas barrier layer, The primer layer is composed of a cured product of a composition containing an acrylic polyol resin having an organic acid group and a polyisocyanate.
  12. 12. A method for producing a gas barrier film according to claim 1, wherein, Preparing a film forming apparatus including a film forming chamber and a winding-out winding chamber, and having a gas adsorbing device in the film forming chamber and the winding-out winding chamber; Mounting the rolled base material layer on a roll-out roller arranged in the roll-out winding chamber; The gas adsorbing device in the film forming chamber and the winding-out and winding-up chamber is operated, and the vapor deposition material obtained by mixing the Si material and the SiO 2 material is used to form the gas barrier layer on the substrate layer passing through the film forming chamber in a state that the partial pressure value of m/z18 in the film forming chamber is set to be 0.05Pa or less.

Description

Gas barrier film and method of manufacturing the same Technical Field The present invention relates to a gas barrier film, and more particularly, to a gas barrier film suitable for packaging of foods, pharmaceuticals, precision electronic parts, and the like. Also disclosed is a method for producing the gas barrier film. The present application claims priority based on japanese patent application No. 2023-180257, 10-month 19 of 2023, and the contents thereof are incorporated herein. Background In packaging materials used for foods and medicines, it is required to block the gas barrier properties of oxygen, water vapor, and other gases that deteriorate the contents and permeate the packaging materials from the viewpoint of suppressing the deterioration of the contents to maintain their functions and properties. In addition, as a packaging material having gas barrier properties, a gas barrier film using a metal foil such as aluminum, which has little influence on temperature, humidity, or the like, as a gas barrier layer is known. As another configuration of the gas barrier film, a film is known in which a vapor deposited film of an inorganic oxide such as silicon oxide or aluminum oxide is formed on a base film made of a polymer material by vacuum vapor deposition or sputtering (for example, see patent document 1). These gas barrier films have transparency and gas barrier properties against oxygen, water vapor, and the like. Prior art literature Patent literature Patent document 1 Japanese patent laid-open No. 60-049934 Disclosure of Invention Problems to be solved by the invention The present inventors have found that, in the case where the gas barrier layer is formed of a vapor deposited film of silicon oxide, the variation in the water vapor barrier properties tends to be large. The present inventors have conducted intensive studies to suppress this point, and have completed the present invention. In view of the above, an object of the present invention is to provide a gas barrier film which has a gas barrier layer containing silicon oxide and has stable water vapor barrier properties. Means for solving the problems [1] The first aspect of the present invention is a gas barrier film comprising a base layer and a gas barrier layer formed on the base layer and containing silicon oxide. In the infrared absorption spectrum from the surface side of the gas barrier layer, the ratio of the peak area of the absorption peak from 3100cm -1 to 3700cm -1 inclusive, which is derived from the OH bond, to the peak area of the absorption peak from 720cm -1 to 1320cm -1 inclusive, which is derived from the Si-O-Si bond, is 0.25 or less. [2] The gas barrier film according to [1], wherein in the infrared absorption spectrum of the gas barrier layer from the surface side, a ratio of a peak area of an absorption peak from 830cm -1 to 910cm -1 inclusive of Si-OH bonds to a peak area of an absorption peak from 720cm -1 to 1320cm -1 inclusive of Si-O-Si bonds is 0.025 or less. [3] The gas barrier film according to [1] or [2], wherein in the infrared absorption spectrum of the gas barrier layer from the surface side, a ratio of a peak area of an absorption peak from 2100cm -1 to 2200cm -1 inclusive of the Si-H bond to a peak area of an absorption peak from 720cm -1 to 1320cm -1 inclusive of the Si-O-Si bond is 0.003 or less. [4] The gas barrier film according to any one of [1] to [3], wherein a value of a ratio b/a of peaks (b=si 3+、Si2+、Si+, si) of Si 3+、Si2+、Si+ and Si relative to a total peak (a=si 4+、Si3+、Si2+、Si+, si) of Si2p peaks measured by X-ray photoelectron spectroscopy (XPS) is greater than 0.122 on a surface of the gas barrier layer. [5] The gas barrier film according to any one of [1] to [4], wherein a ratio (O/Si) of an atomic number of oxygen (O) to an atomic number of silicon (Si) measured by X-ray photoelectron spectroscopy (XPS) is 1.41 to 1.9. [6] The gas barrier film according to any one of [1] to [5], wherein a thickness of the gas barrier layer is 10nm to 60 nm. [7] The gas barrier film according to any one of [1] to [6], further comprising an overcoating layer formed on the gas barrier layer. [8] The gas-barrier film according to [7], wherein the overcoat layer comprises at least 1 of a metal alkoxide, a hydrolysate of the metal alkoxide, a reaction product of the metal alkoxide, and a reaction product of the hydrolysate of the metal alkoxide, and a water-soluble polymer. [9] The gas barrier film according to [7] or [8], wherein the overcoat layer comprises at least 1 of a silane coupling agent, a hydrolysis product of a silane coupling agent, a reaction product of a silane coupling agent, and a reaction product of a hydrolysis product of a silane coupling agent. [10] The gas barrier film according to any one of [1] to [9], further comprising an undercoat layer (undercoat layer) provided between the base material layer and the gas barrier layer, wherein the undercoat layer contains at least 1 of a thermose