CN-122029304-A - Method for forming silicon-containing film

Abstract

Provided are a method for efficiently forming a silicon-containing film on a substrate, a substrate on which a silicon-containing film has been formed by the method, and a product including the substrate. [ solution ] for example, a compound represented by the formula (1) is used: R 1 3 E-N=C=N-ER 1 3 [ in the formula (1), E is independently Si, ge, or Sn, and R 1 is independently a linear or cyclic C1-C6 alkyl group, a C2-C6 alkenyl group, or a C1-C6 alkynyl group ].

Inventors

• V. Nesterov
• Jean-Mark Girard

Assignees

• 乔治洛德方法研究和开发液化空气有限公司

Dates

Publication Date

20260512

Application Date

20240927

Priority Date

20231113

Claims (20)

1. 1. A method for forming a silicon-containing film on a substrate, the method comprising: (i) Providing at least one silicon source compound containing at least one silicon halide onto a substrate, and (Ii) Providing a carbon-nitrogen source compound represented by the following formula (1) onto the substrate: R 1 3 E-N=C=N-ER 1 3 [ in formula (1), E is independently Si, ge, or Sn, and R 1 is independently C1-C6 alkyl, C2-C6 alkenyl, C4-C6 cycloalkyl, or C4-C6 cycloalkenyl ].
2. 2. The method of claim 1, wherein E in formula (1) is Si.
3. 3. The method of claim 1, wherein R 1 in formula (1) is CH 3 .
4. 4. The method of claim 1, wherein the at least one silicon source compound is selected from the group consisting of halosilanes, carbo (halo) silanes, halosiloxanes, organo (halo) siloxanes, and oligomeric halosilanes.
5. 5. The method of claim 1, wherein the at least one silicon source compound is selected from the group consisting of chlorosilanes, bromosilanes, iodosilanes, dibromosilanes, diiodosilanes, tetrabromosilanes, tetraiodosilanes, pentachlorodisilanes, pentabromodisilanes, hexachlorodisilanes, hexabromodisilanes, and octachlorotrisilanes.
6. 6. The method of claim 1, further comprising (iii) providing a catalyst onto the substrate.
7. 7. The method of claim 6, wherein the catalyst is an organic amine.
8. 8. The method of claim 1, further comprising (iv) providing a nitrogen-containing reagent onto the substrate.
9. 9. The method of claim 8, wherein the nitrogen-containing reagent is (A) One or more selected from the group consisting of ammonia, amines, hydrazine, alkylhydrazines, hexamethyldisilazane, and heptamethyldisilazane; (b) One or more plasmas selected from the group consisting of ammonia, amines, hydrazine, alkylhydrazines, hexamethyldisilazane, and heptamethyldisilazane; (c) Nitrogen plasma or (D) A mixture of hydrogen plasma and (b) one or more plasmas selected from the group consisting of ammonia, amines, hydrazine, alkylhydrazines, hexamethyldisilazane, and heptamethyldisilazane, or (c) a nitrogen plasma.
10. 10. The method of claim 1, further comprising (v) providing a silane compound (excluding any silane compound containing a silicon halide) onto the substrate.
11. 11. The method of claim 1, further comprising (vi) providing a boron-containing reagent onto the substrate.
12. 12. The method of claim 1, wherein the at least one silicon source compound and carbon-nitrogen source compound are sequentially provided onto the substrate.
13. 13. The method of claim 1, wherein the at least one silicon source compound and carbon-nitrogen source compound are provided simultaneously onto the substrate.
14. 14. The method of claim 1, wherein the silicon-containing film is a silicon carbonitride (SiCN) film.
15. 15. The method of claim 1, wherein the silicon-containing film is a silicon oxycarbonitride (SiOCN) film.
16. 16. The method of claim 1, wherein the silicon-containing film is a silicon boron carbonitride (SiBCN) film.
17. 17. The method of claim 1, wherein the silicon-containing film is a boron silicon oxynitride (SiBOCN) film.
18. 18. The method of claim 1, wherein the silicon-containing film is a silicon carbide (SiC) film.
19. 19. The method of claim 1, wherein the substrate is an electronic circuit board.
20. 20. A method for producing a substrate on which a film has been formed, the method comprising the method according to any one of claims 1 to 19.

Description

Method for forming silicon-containing film Technical Field The present disclosure relates to a method for forming a silicon-containing film on a substrate. The disclosure also relates to a substrate on which the silicon-containing film is formed, and to a product comprising such a substrate. Background Silicon nitride-containing films, such as silicon carbonitride (SiCN) films, are widely used as dielectric materials in a variety of applications for the production of semiconductor devices. Development of a novel film deposition method that provides excellent film characteristics and process performance is critical to device downsizing and new technology development. Non-patent document 1 indicates that, for example, a silicon-containing film has better physical and chemical properties in terms of, for example, dielectric properties, engineering/mechanical properties, thermal stability, and oxidation resistance. Non-patent document 1 describes a method for depositing a silicon nitride film using successive pulses of a halosilane compound, an aminosilane compound, and optionally an R 2 NH compound (R is H, C-C4 alkyl, or a combination thereof). Prior art literature Non-patent literature Non-patent literature 1:E, ermakova et al J.Organomet.chem. [ journal of organometallic chemistry ], volume 958, 122183 (2022) Patent literature Patent document 1 U.S. patent publication 2023/0279545 Disclosure of Invention The present disclosure provides a method for forming a silicon-containing film that allows for efficient formation of a silicon-containing film having better characteristics on a substrate. The present disclosure also provides a substrate on which a silicon-containing film having better characteristics is formed, and a product including such a substrate. The following methods are examples of methods for forming silicon-containing films according to the present disclosure. A method for forming a silicon-containing film on a substrate, the method comprising: (i) Providing at least one silicon source compound containing at least one silicon halide onto a substrate, and (Ii) Providing a carbon-nitrogen source compound represented by the following formula (1) onto the substrate: R13E-N=C=N-ER13 [ in formula (1), E is independently Si, ge, or Sn, and R 1 is independently C1-C6 alkyl, C2-C6 alkenyl, C4-C6 cycloalkyl, or C4-C6 cycloalkenyl ]. Drawings Fig. 1 shows an example of a scheme for implementing the CVD method in the present disclosure. Fig. 2 shows the analysis results of the constituent components of the silicon-containing film of example 1 by X-ray photoelectron spectroscopy (XPS). Detailed Description The embodiments of the present disclosure are described in detail below, but the scope of the present invention is not limited to the embodiments described herein, and various changes may be made without departing from the spirit of the present invention. Embodiments may be implemented singly or in more than one combination. A specific description of one embodiment that is applicable to other embodiments will not be repeated. The numerical ranges in this disclosure include upper and lower limits indicated by "-" and "from", respectively. For example, the statement "A-B" or "A-B" using the values A and B means A or more to B or less. The expression "a-B", "a-B" or "a or greater to B or less" used to represent a stepwise numerical range in the present disclosure also includes independently both "preferably a or greater" and "preferably B or less", wherein the lower and upper limits may be replaced with other numerical range upper and lower limits. The lower or upper limit of the numerical ranges given in the present disclosure is a numerical value within the numerical range and may be replaced with the numerical value given in the examples. As used in this disclosure, the singular forms "a," "an," and "the" may include more than one referent unless the context clearly dictates otherwise. As used in this disclosure, "and/or" includes both relationships expressed by "and relationships expressed by" or ". In the present disclosure, "include" encompasses "consisting essentially of," consisting essentially of "," and "consisting of", and "consisting essentially of" and "consisting of", "cover" consisting essentially of "and" consisting of ", and" consisting essentially of. "cover" consists of. [ Method for Forming silicon-containing film ] One embodiment provides: A method for forming a silicon-containing film on a substrate, the method comprising: (i) Providing at least one silicon source compound containing at least one silicon halide onto a substrate, and (Ii) Providing a carbon-nitrogen source compound represented by the following formula (1) onto the substrate: R13E-N=C=N-ER13 [ in formula (1), E is independently Si, ge, or Sn, and R 1 is independently C1-C6 alkyl, C2-C6 alkenyl, C4-C6 cycloalkyl, or C4-C6 cycloalkenyl ]. In this embodiment, at least one silicon source compound containing at least one silico