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CN-122029305-A - Plating film for metal sintering bonding, method for producing the same, and semiconductor mounting substrate

CN122029305ACN 122029305 ACN122029305 ACN 122029305ACN-122029305-A

Abstract

The invention provides a plating film which has excellent heat resistance and thermal shock resistance and is suitable for metal sintering joint. The plating film for metal sintering bonding is characterized by comprising (A) an electroless nickel-phosphorus plating film, wherein the phosphorus content of the electroless nickel-phosphorus plating film is 4 mass% or less when the electroless nickel-phosphorus plating film is 100 mass%.

Inventors

  • Tong Chi Sheng
  • Koremura harumoto
  • Hizume Kei
  • XIE MINGJUN
  • SUGANUMA KATSUAKI
  • CHEN CHUANTONG
  • ZHANG ZHENG
  • SUETAKE AIJI

Assignees

  • 奥野制药工业株式会社
  • 国立大学法人大阪大学

Dates

Publication Date
20260512
Application Date
20240703
Priority Date
20231013

Claims (12)

  1. 1. A plating film for metal sintering bonding is characterized in that: The plating film for metal sintering bonding is provided with (A) an electroless nickel-phosphorus plating film, wherein the phosphorus content of the (A) electroless nickel-phosphorus plating film is below 4 mass% when the electroless nickel-phosphorus plating film is set to 100 mass%.
  2. 2. The metal-sintering-joining plating film according to claim 1, wherein: The sulfur content of the electroless nickel-phosphorus plating film (A) is less than 0.0005 mass% when the electroless nickel-phosphorus plating film is 100 mass%.
  3. 3. The metal-sintering-joining plating film according to claim 1, wherein: the sulfur content of the electroless nickel-phosphorus plating film (A) is 0.0001 mass% or less when the electroless nickel-phosphorus plating film is 100 mass%.
  4. 4. The metal-sintering-joining plating film according to claim 1, wherein: the electroless nickel-phosphorus plating film (A) has a thickness of 0.1 to 20 [ mu ] m or less.
  5. 5. The metal-sintering-joining plating film according to claim 1, wherein: the electroless nickel-phosphorus plating film (A) further comprises an electroless silver plating film (B) or an electroless gold plating film (B).
  6. 6. The metal-sintering-joining plating film according to claim 5, wherein: The electroless silver plating film or the electroless gold plating film (B) has a thickness of 0.02 to 2 [ mu ] m.
  7. 7. The metal-sintering-joining plating film according to claim 5, wherein: And (C) a barrier metal layer is further provided between the electroless nickel-phosphorus plating film (A) and the electroless silver plating film (B) or the electroless gold plating film (B).
  8. 8. The metal-sintering-joining plating film according to claim 7, wherein: the barrier metal layer (C) is an electroless palladium plating film or an electroless palladium-phosphorus plating film.
  9. 9. The metal-sintering-joining plating film according to claim 1, wherein: For metallic sintered materials containing silver and/or copper.
  10. 10. A method for producing a metal-sintering-joining plating film, which comprises forming a metal-sintering-joining plating film on a substrate, characterized in that: comprising (1) a step 1 of bringing an electroless nickel-phosphorus plating solution into contact with the surface of a substrate to form (A) an electroless nickel-phosphorus plating film on the substrate, The phosphorus content of the electroless nickel-phosphorus plating film (A) is 4 mass% or less when the electroless nickel-phosphorus plating film is 100 mass%.
  11. 11. The method of manufacturing as claimed in claim 10, wherein: And (2) a step 2 of bringing an electroless silver plating solution or an electroless gold plating solution into contact with the surface of the electroless nickel-phosphorus plating film to form (B) an electroless silver plating film or an electroless gold plating film on the electroless nickel-phosphorus plating film (A).
  12. 12. A semiconductor mounting substrate, characterized in that: a plating film for metal sintering bonding comprising (A) an electroless nickel-phosphorus plating film is laminated on a substrate, A semiconductor element is provided on the plating film for metal sintering bonding through a metal sintering material layer, The phosphorus content of the electroless nickel-phosphorus plating film (A) is 4 mass% or less when the electroless nickel-phosphorus plating film is 100 mass%.

Description

Plating film for metal sintering bonding, method for producing the same, and semiconductor mounting substrate Technical Field The invention relates to a plating film, a method for manufacturing the plating film, and a semiconductor mounting substrate. Background In recent years, a next-generation power module having a wide band gap power semiconductor element such as SiC or GaN mounted thereon has been used. Such next-generation power modules are required to have high heat resistance even for peripheral components, because they can operate in a high-temperature environment of 200 ℃ or higher, for example. Conventionally, solder has been used for bonding a semiconductor element to a substrate, but there has been a problem in that heat resistance and thermal shock resistance are poor. As a bonding technique instead of solder, attention is paid to metal sintering bonding using silver or copper particles. However, in order to perform metal sintering bonding, it is necessary to surface-treat members to be bonded such as substrates, and heat resistance is also required for a film formed by the surface treatment. The inventors of the present invention found that electroless nickel alloy plating is suitable as a surface treatment suitable for silver sinter bonding or copper sinter bonding. As electroless nickel alloy plating, electroless nickel-phosphorus plating, electroless nickel-boron plating, and the like are available, and in particular, electroless nickel-phosphorus plating films are put into practical use in a wide range of fields. However, the electroless nickel-phosphorus plating film having a phosphorus content of 6 to 12 mass% which is generally used (see patent document 1) has poor heat resistance and thermal shock resistance, and cracks occur when used in a high-temperature environment, and therefore, it is difficult to use the electroless nickel-phosphorus plating film as a peripheral component of a next-generation power module. Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2023-090169 Disclosure of Invention Problems to be solved by the invention The purpose of the present invention is to provide a plating film which has excellent heat resistance and thermal shock resistance and is suitable for metal sintering bonding. Means for solving the problems The inventors of the present invention have repeatedly studied to solve the above problems, and as a result, have found that the above object can be achieved in a plating film for metal sintering joining having a phosphorus content in a specific range in (a) an electroless nickel-phosphorus plating film, and have completed the present invention. That is, the present invention relates to a plating film, a method for producing the plating film, and a semiconductor mounting substrate. 1. A plating film for metal sintering bonding is characterized in that: Which is a plating film for metal sintering bonding comprising (A) an electroless nickel-phosphorus plating film, The phosphorus content of the electroless nickel-phosphorus plating film (a) is 4 mass% or less when the electroless nickel-phosphorus plating film is 100 mass%. 2. The metal-sintering-joining plating film according to claim 1, wherein the sulfur content of the electroless nickel-phosphorus plating film (A) is less than 0.0005 mass% when the electroless nickel-phosphorus plating film is 100 mass%. 3. The metal-sintering-joining plating film according to item 1 or 2, wherein the sulfur content of the electroless nickel-phosphorus plating film (a) is 0.0001 mass% or less when the electroless nickel-phosphorus plating film is 100 mass%. 4. The metal-sintering-joining plating film according to any one of claims 1 to 3, wherein the electroless nickel-phosphorus plating film (A) has a thickness of 0.1 to 20 μm or less. 5. The metal-sintering-joining plating film according to any one of claims 1 to 4, wherein (B) an electroless silver plating film or an electroless gold plating film is further provided on the electroless nickel-phosphorus plating film (A). 6. The metal-sintering-joining plating film according to item 5, wherein the electroless silver plating film or the electroless gold plating film (B) has a thickness of 0.02 to 2 μm. 7. The metal-sintering-joining plating film according to item 5 or 6, wherein (C) a barrier metal layer is further provided between the (A) electroless nickel-phosphorus plating film and the (B) electroless silver plating film or electroless gold plating film. 8. The metal-sintering-joining plating film according to item 7, wherein the barrier metal layer (C) is an electroless palladium plating film or an electroless palladium-phosphorus plating film. 9. The plating film for metal sintering joining according to any one of claims 1 to 9, which is used for a metal sintering material containing silver and/or copper. 10. A method for producing a metal-sintering-joining plating film, which comprises forming a metal-sinteri