CN-122029709-A - Light emitting chip, light emitting device, and measuring device

Abstract

The light-emitting device includes a substrate, a plurality of light-emitting elements provided on the substrate, a plurality of thyristors that emit light from the light-emitting elements or increase the amount of emitted light from the light-emitting elements by being turned on, a driving unit provided on the substrate and configured to individually drive the plurality of thyristors to be turned on, and a reference potential terminal that supplies a predetermined reference potential to the driving unit and electrically separates a region of the driving unit connected to the reference potential terminal from a side surface of the substrate.

Inventors

• KONDO TAKASHI
• OHNO SEIJI

Assignees

• 富士胶片商业创新有限公司

Dates

Publication Date

20260512

Application Date

20250122

Priority Date

20240124

Claims (14)

1. 1. A light-emitting device is provided with: A substrate; A plurality of light emitting elements disposed on the substrate; A plurality of thyristors that cause the light emitting elements to emit light or increase the amount of light emitted by the light emitting elements by being turned on; a driving part provided on the substrate for individually driving the plurality of thyristors to be turned on state, and And a reference potential terminal for supplying a predetermined reference potential to the driving unit, wherein a region of the driving unit connected to the reference potential terminal is electrically separated from the side surface of the substrate.
2. 2. A light emitting chip is provided with: A substrate of a semiconductor; A plurality of light emitting elements and a plurality of thyristors provided on the front surface side of the substrate, the plurality of thyristors being turned on to cause the light emitting elements to emit light or to increase the amount of light emitted by the light emitting elements; a driving unit provided on a surface side of the substrate, the driving unit individually driving the plurality of thyristors to be turned on; A reference potential terminal for supplying a preset reference potential to the driving unit, and And a separation unit that suppresses the flow of current between the reference potential terminal and the substrate.
3. 3. The light emitting chip of claim 2, wherein, The separation portion suppresses the driving portion from extending to the outer periphery of the substrate.
4. 4. The light emitting chip of claim 2, wherein, The separation portion suppresses formation of a current path between the light-emitting element and the reference potential terminal via a side surface side of the substrate.
5. 5. The light emitting chip of claim 2, wherein, The thyristors are laminated on the light emitting element provided on the substrate, The driving section is laminated on a structure provided on the substrate and equivalent to the light emitting element.
6. 6. The light emitting chip of claim 5, wherein, The light emitting element, the thyristor, and the driving section are constituted by a semiconductor laminate in which a plurality of semiconductor layers having different conductivity types are laminated, The separation portion is a groove provided in the semiconductor laminate and/or a region in which insulating ions are implanted in the semiconductor laminate.
7. 7. The light emitting chip of claim 6, wherein, The light emitting element and the structure have a diode structure in which a p-type semiconductor layer serving as an anode and an n-type semiconductor layer serving as a cathode are laminated, The trench or the region into which the insulating ion is implanted is from the surface side of the substrate to at least the side of the p-type semiconductor layer and the n-type semiconductor layer which constitute the diode structure away from the substrate side.
8. 8. The light emitting chip according to claim 6 or 7, wherein, The light emitting element has a current narrow layer which is a region where current is not easily passed due to oxidation, The depth of the grooves is the depth to the current constriction.
9. 9. The light emitting chip of claim 5, wherein, The reference potential is applied to a side of the diode structure formed by stacking a p-type semiconductor layer serving as an anode and an n-type semiconductor layer serving as a cathode of the structure, which is away from the substrate.
10. 10. The light emitting chip of claim 6, wherein, The groove and/or the region into which the insulating ions are injected are provided so as to surround the driving portion.
11. 11. The light emitting chip of claim 2, wherein, The driving section sequentially shifts the on states of the plurality of thyristors.
12. 12. A light emitting chip is provided with: A substrate of a semiconductor; a plurality of light emitting elements provided on a surface side of the substrate; a plurality of thyristors stacked on the light emitting element, the thyristors being turned on to emit light or increase the amount of light emitted from the light emitting element; A reference potential terminal provided on a structure equivalent to the light emitting element and supplied with a predetermined reference potential, and And a separation unit that suppresses formation of a current path between the reference potential terminal and the light emitting element via a side surface side of the substrate.
13. 13. A light-emitting device is provided with: The light-emitting chip as set forth in any one of claims 2 to 12, and And a driver having one end set to a ground potential and the other end connected to the substrate of the light emitting chip, the driver being turned on at a predetermined timing, and a current for emitting light is supplied to the light emitting element.
14. 14. A measuring device is provided with: the light-emitting device of claim 13, and And an acquisition unit that acquires information on an object based on reflected light obtained by reflecting light from the light emitting device by the object.

Description

Light emitting chip, light emitting device, and measuring device Technical Field The present invention relates to a light emitting chip, a light emitting device, and a measuring device. Background Patent document 1 describes a light-emitting device including a semiconductor substrate, a light-emitting element portion formed on the semiconductor substrate and including a plurality of light-emitting elements that emit light, a signal line formed on the semiconductor substrate and transmitting a signal to the light-emitting elements, and an oxide film formed between the signal line and the semiconductor substrate along the signal line. Patent document 2 describes a light emitting unit using transistor coupling. Technical literature of the prior art Patent literature Patent document 1 Japanese patent application laid-open No. 2023-42123 Patent document 2 Japanese patent application laid-open No. 2023-112937 Disclosure of Invention Technical problem to be solved by the invention A light emitting chip comprises a light emitting element and a driving part for transmitting a signal to the light emitting element on a semiconductor substrate, wherein a leakage current from the light emitting element sometimes flows from the substrate, particularly from a cut surface of the outer periphery of the substrate to a terminal for supplying a reference potential to the driving part. In this case, the on state of the light emitting element that emits light once is maintained, and erroneous lighting occurs. The embodiment of the present invention relates to a structure in which the leakage current from the light-emitting element may flow to the terminal for supplying the reference potential of the driving section, and the erroneous lighting is suppressed. Means for solving the technical problems (1) According to one aspect of the present invention, there is provided a light-emitting device including a substrate, a plurality of light-emitting elements provided on the substrate, a plurality of thyristors that emit light from the light-emitting elements or increase the amount of emitted light from the light-emitting elements by turning on, a driving unit provided on the substrate and configured to individually drive the thyristors to turn on, and a reference potential terminal configured to supply a predetermined reference potential to the driving unit, wherein a region of the driving unit connected to the reference potential terminal is electrically separated from a side surface of the substrate. (2) According to another aspect of the present invention, there is provided a light emitting chip including a semiconductor substrate, a plurality of light emitting elements and a plurality of thyristors provided on a front surface side of the substrate, the plurality of thyristors being turned on to emit light from the light emitting elements or increase an amount of emitted light from the light emitting elements, a driving unit provided on the front surface side of the substrate to individually drive the plurality of thyristors to turn on, a reference potential terminal to which a predetermined reference potential is supplied, and a separation unit to suppress a flow of current between the reference potential terminal and the substrate. (3) In (2), the separation portion may be formed so as to prevent the driving portion from extending to the outer periphery of the substrate. (4) In (2), the separation unit may suppress formation of a current path between the light-emitting element and the reference potential terminal through a side surface of the substrate. (5) In (2), the thyristors may be laminated on the light emitting element provided on the substrate, or the driving unit may be laminated on a structure provided on the substrate and equivalent to the light emitting element. (6) In (5), the light emitting element, the thyristor, and the driving portion may be formed of a semiconductor laminate in which a plurality of semiconductor layers having different conductivity types are laminated, and the separation portion may be a groove provided in the semiconductor laminate and/or a region in which insulating ions are injected into the semiconductor laminate. (7) In (6), the light emitting element and the structure may have a diode structure in which a p-type semiconductor layer serving as an anode and an n-type semiconductor layer serving as a cathode are stacked, and the trench or the region into which the insulating ions are implanted may be at least from the front surface side of the substrate to a side of the p-type semiconductor layer and the n-type semiconductor layer constituting the diode structure, which is away from the substrate side. (8) In (6), the light-emitting element may have a current narrow layer which is a region where current is not easily passed due to oxidation, and the depth of the groove may be a depth reaching the current narrow layer. (9) In (5), the reference potential may be applied to a side of the diode s