CN-122029954-A - Diode structure for direct back contact back power delivery network

Abstract

A diode structure comprising a nanoplatelet structure on a substrate, the nanoplatelet structure comprising a first type diffusion region, a second first type diffusion region on the substrate, a first second type diffusion region, and a second type diffusion region, each diffusion region on the substrate. The diode structure includes a first gate between the first and second first type diffusion regions on the nanoplatelet structure. The diode structure includes a first front side zero (M0) metal layer coupled to front sides of the first and second first type diffusion regions and a first back side M0 metal layer coupled to back sides of the first and second first type diffusion regions to form an anode. The diode structure includes a second front side M0 metal layer and a second back side M0 metal layer, the second front side M0 metal layer coupled to the front sides of the first and second type diffusion regions, the second back side M0 metal layer coupled to the back sides of the first and second type diffusion regions to form a cathode.

Inventors

• H.WANG
• Y.SUN
• S. Narasingha

Assignees

• 高通股份有限公司

Dates

Publication Date

20260512

Application Date

20241001

Priority Date

20231103

Claims (20)

1. 1. A diode structure, the diode structure comprising: a nanoplatelet structure on a substrate, the nanoplatelet structure comprising a first type of diffusion region on the substrate, a second first type of diffusion region on the substrate, a first second type of diffusion region on the substrate, and a second type of diffusion region on the substrate; a first gate electrode is provided with a first gate electrode, the first gate is between the first and second first type diffusion regions on the nanoplatelet structure; a first front side zero (M0) metal layer and a first back side M0 metal layer, the first front side zero (M0) metal layer coupled to the front sides of the first and second first type diffusion regions, the first back side M0 metal layer coupled to the back sides of the first and second first type diffusion regions to form an anode, and A second front side M0 metal layer and a second back side M0 metal layer, the second front side M0 metal layer being coupled to the front sides of the first and second type diffusion regions, the second back side M0 metal layer being coupled to the back sides of the first and second type diffusion regions to form a cathode.
2. 2. The diode structure of claim 1, wherein the first gate horizontally surrounds the nanoplatelet structure on four sides.
3. 3. The diode structure of claim 1, wherein the first type diffusion region comprises a p+ diffusion region and the second type diffusion region comprises an n+ diffusion region.
4. 4. The diode structure of claim 1, further comprising: A first metal-to-diffusion (MD) contact coupled to a front side of the first type diffusion region; A first zero (V0) via, the first zero (V0) via coupled to the first MD contact; A second MD contact coupled to the front sides of the first and second first type diffusion regions, and A second V0 via, the second V0 via coupled to the second MD contact.
5. 5. The diode structure of claim 4, wherein the first front side M0 metal layer is coupled to the first V0 via and the second V0 via.
6. 6. The diode structure of claim 1, further comprising: A first back MD contact coupled to a back side of the first type diffusion region; A first back side zero (V0) via coupled to the first back side MD contact; A second back MD contact coupled to the back of the second first type diffusion region, and A second backside V0 via, the second backside V0 via coupled to the second backside MD contact.
7. 7. The diode structure of claim 6, wherein the first backside M0 metal layer is coupled to the first backside V0 via and the second backside V0 via.
8. 8. The diode structure of claim 1, further comprising: A third front side M0 metal layer coupled to the front sides of the first and second type diffusion regions opposite the second front side M0 metal layer, and A third backside M0 metal layer, the third backside M0 metal layer being coupled to the backs of the first and second type diffusion regions opposite the second backside M0 metal layer to form the cathode.
9. 9. The diode structure of claim 1, further comprising a Back Side Power Delivery Network (BSPDN), the Back Side Power Delivery Network (BSPDN) coupled to the anode and the cathode.
10. 10. The diode structure of claim 1, wherein the diode structure comprises an electrostatic detection (ESD) device.
11. 11. A method of forming a diode structure, the method comprising: Forming a nanoplatelet structure on a substrate, the nanoplatelet structure comprising a first type diffusion region on the substrate, a second first type diffusion region on the substrate, a first second type diffusion region on the substrate, and a second type diffusion region on the substrate; forming a first gate between the first and second first type diffusion regions on the nanoplatelet structure; Forming a first front side zero (M0) metal layer and a first back side M0 metal layer, the first front side zero (M0) metal layer being coupled to front sides of the first and second first type diffusion regions, the first back side M0 metal layer being coupled to back sides of the first and second first type diffusion regions to form an anode, and A second front side M0 metal layer and a second back side M0 metal layer are formed, the second front side M0 metal layer being coupled to the front sides of the first and second type diffusion regions, the second back side M0 metal layer being coupled to the back sides of the first and second type diffusion regions to form a cathode.
12. 12. The method of claim 11, wherein the first gate horizontally surrounds the nanoplatelet structure on four sides.
13. 13. The method of claim 11, wherein the first type diffusion region comprises a p+ diffusion region and the second type diffusion region comprises an n+ diffusion region.
14. 14. The method of claim 11, the method further comprising: Forming a first metal-to-diffusion (MD) contact coupled to a front side of the first type diffusion region; forming a first zero (V0) via, the first zero (V0) via coupled to the first MD contact; Forming a second MD contact coupled to the front sides of the first and second first type diffusion regions, and A second V0 via is formed, the second V0 via coupled to the second MD contact.
15. 15. The method of claim 14, wherein the first front side M0 metal layer is coupled to the first V0 via and the second V0 via.
16. 16. The method of claim 11, the method further comprising: forming a first back MD contact coupled to a back side of the first type diffusion region; Forming a first back side zero (V0) via, the first back side zero (V0) via coupled to the first back side MD contact; forming a second back MD contact coupled to the back of the second first type diffusion region, and A second backside V0 via is formed, the second backside V0 via coupled to the second backside MD contact.
17. 17. The method of claim 16, wherein the first backside M0 metal layer is coupled to the first backside V0 via and the second backside V0 via.
18. 18. The method of claim 11, the method further comprising: Forming a third front side M0 metal layer, the third front side M0 metal layer being coupled to the front sides of the first and second type diffusion regions opposite the second front side M0 metal layer, and A third backside M0 metal layer is formed, the third backside M0 metal layer being coupled to the backs of the first and second type diffusion regions opposite the second backside M0 metal layer to form the cathode.
19. 19. The method of claim 11, further comprising forming a back power delivery network (BSPDN), the back power delivery network (BSPDN) coupled to the anode and the cathode.
20. 20. The method of claim 11, wherein the diode structure comprises an electrostatic detection (ESD) device.

Description

Diode structure for direct back contact back power delivery network Cross Reference to Related Applications The present application claims priority from U.S. patent application Ser. No. 18/501,836, entitled "DIODE STRUCTURE FOR DIRECT BACKSIDE CONTACT, BACKSIDE POWER DELIVERY NETWORK (diode Structure for direct Back contact Back Power delivery network)" filed on month 11 and 3 of 2023, the disclosure of which is expressly incorporated by reference in its entirety. Background Technical Field Aspects of the present disclosure relate to semiconductor devices, and more particularly, to a diode structure for a direct back-contact back-side power delivery network (BSPDN). Background As Integrated Circuit (IC) technology advances, device geometries have decreased. Technological advances in IC materials and design have resulted in multi-generation ICs, where each generation has smaller and more complex circuitry than the previous generation. During the development of ICs, functional density has increased and geometry size has decreased. This downscaling process provides benefits by increasing production efficiency and reducing the associated costs. Such scaling down also increases the complexity of processing and manufacturing ICs. Furthermore, achieving these advances involves similar developments in IC processing and manufacturing. While existing methods of constructing IC devices are adequate for the intended purpose of these IC devices, these methods are not entirely satisfactory in all respects. For example, fin-based devices are three-dimensional structures on the surface of a semiconductor substrate. Fin-based Field Effect Transistors (FETs) may be referred to as finfets. Advanced logic Complementary Metal Oxide Semiconductor (CMOS) scaling such as full-loop Gate (GAA) FETs for FinFET technology achieve performance-power-area (PPA) enhancement over past process nodes. However, it is difficult to further enhance FinFET transistor mobility in smaller process nodes due to channel-induced subthreshold leakage. One solution to channel induced subthreshold leakage is dielectric junction isolation. Unfortunately, dielectric junction isolation prevents the use of vertical P-N junction diodes (without introducing an additional masking step). Accordingly, an improved diode structure is desired. Disclosure of Invention A diode structure comprising a nanoplatelet structure on a substrate, the nanoplatelet structure comprising a first type diffusion region, a second first type diffusion region on the substrate, a first second type diffusion region, and a second type diffusion region, each diffusion region on the substrate. The diode structure includes a first gate between the first and second first type diffusion regions on the nanoplatelet structure. The diode structure includes a first front side zero (M0) metal layer coupled to front sides of the first and second first type diffusion regions and a first back side M0 metal layer coupled to back sides of the first and second first type diffusion regions to form an anode. The diode structure includes a second front side M0 metal layer and a second back side M0 metal layer, the second front side M0 metal layer coupled to the front sides of the first and second type diffusion regions, the second back side M0 metal layer coupled to the back sides of the first and second type diffusion regions to form a cathode. A method of forming a diode structure is described. The method includes forming a nanoplatelet structure on a substrate. The nanoplatelet structure includes a first type diffusion region on the substrate, a second first type diffusion region on the substrate, a first second type diffusion region on the substrate, and a second type diffusion region on the substrate. The method also includes forming a first gate between the first and second first type diffusion regions on the nanoplatelet structure. The method further includes forming a first front side zero (M0) metal layer and a first back side M0 metal layer, the first front side zero (M0) metal layer coupled to front sides of the first and second first type diffusion regions, the first back side M0 metal layer coupled to back sides of the first and second first type diffusion regions to form an anode. The method further includes forming a second front side M0 metal layer and a second back side M0 metal layer, the second front side M0 metal layer coupled to the front sides of the first and second type diffusion regions, the second back side M0 metal layer coupled to the back sides of the first and second type diffusion regions to form a cathode. This has outlined rather broadly the features and technical advantages of the present disclosure in order that the detailed description that follows may be better understood. Additional features and advantages of the disclosure will be described hereinafter. Those skilled in the art should appreciate that the present disclosure may be readily utilized as a basis for modifyin