CN-122029977-A - Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and program

Abstract

The invention provides a technology capable of inhibiting foreign matters from adhering to a substrate. The substrate processing apparatus includes a processing container including a1 st space and a 2 nd space located above the 1 st space, a mounting portion for mounting a substrate, a driving portion for driving the mounting portion, a1 st supply system for controlling supply of a1 st gas into the processing container, a 2 nd supply system for controlling supply of a 2 nd gas having a molecular structure different from that of the 1 st gas into the processing container, and a control portion configured to control the driving portion, the 1 st supply system, and the 2 nd supply system so as to sequentially perform (a) a process of supplying the 1 st gas to the substrate in the 1 st space, (b) a process of disposing the substrate in the 2 nd space, and (c) a process of supplying the 2 nd gas to the substrate in the 2 nd space.

Inventors

• ABURATANI YUKINORI
• ITATANI HIDEHARU
• SHAN BENXUN
• OHASHI NAOFUMI

Assignees

• 株式会社国际电气

Dates

Publication Date

20260512

Application Date

20240322

Claims (20)

1. 1. A substrate processing apparatus, comprising: A processing container including a1 st space and a 2 nd space located above the 1 st space inside; a mounting portion for mounting a substrate thereon; A driving unit that drives the mounting unit; a1 st supply system for controlling supply of a1 st gas into the process container; a2 nd supply system for controlling supply of a2 nd gas having a molecular structure different from that of the 1 st gas into the processing container; A control unit configured to control the drive unit, the 1 st supply system, and the 2 nd supply system so as to sequentially: (a) A process of supplying the 1 st gas to the substrate in the 1 st space; (b) Disposing the process of the substrate in the 2 nd space; (c) And supplying the 2 nd gas to the substrate in the 2 nd space.
2. 2. The substrate processing apparatus according to claim 1, wherein, The 1 st supply system includes a1 st supply portion provided in the 1 st space, The 2 nd supply system includes a2 nd supply portion provided in the 2 nd space, The control unit further controls the 1 st supply system so that the 1 st gas is supplied via the 1 st supply unit in (a), and controls the 2 nd supply system so that the 2 nd gas is supplied via the 2 nd supply unit in (c).
3. 3. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus further includes: An exhaust system; A 1 st exhaust port that communicates the 1 st space with the exhaust system, The control portion further controls the exhaust system such that the gas is discharged from the 1 st exhaust port in (a).
4. 4. The substrate processing apparatus according to claim 3, wherein, The substrate processing apparatus further has a2 nd exhaust port that communicates the 2 nd space with the exhaust system and is different from the 1 st exhaust port, The control portion further controls the exhaust system such that the gas is discharged from the 2 nd exhaust port in (b).
5. 5. The substrate processing apparatus according to claim 4, wherein, The control portion may further control the exhaust system such that the pressure in the 2 nd space in (a) is higher than the pressure in the 1 st space in (a).
6. 6. The substrate processing apparatus according to claim 4, wherein, The control portion is capable of further controlling the exhaust system such that (1) In (a), the conductance of the gas on the downstream side of the 1 st exhaust port is made larger than the conductance of the gas on the downstream side of the 2 nd exhaust port, or (2) In (a), the gas is not discharged from the 2 nd exhaust port.
7. 7. The substrate processing apparatus according to claim 4, wherein, The control portion may further control the exhaust system such that the gas is further discharged from the 2 nd exhaust port in (a).
8. 8. The substrate processing apparatus according to any one of claims 1 to 7, wherein, The substrate processing apparatus further has a 3 rd supply system that supplies a purge gas to the 2 nd space, The control part can further control the 3 rd supply system such that the purge gas is supplied into the 2 nd space in (a).
9. 9. The substrate processing apparatus according to any one of claims 1 to 7, wherein, The substrate processing apparatus further includes a temperature adjusting unit that controls a temperature of the substrate, The control section can further control the temperature adjusting section so that the temperature of the substrate in (a) is lower than the temperature of the substrate in (b).
10. 10. The substrate processing apparatus according to any one of claims 1 to 7, wherein, The substrate processing apparatus further includes a carry-in/out port provided in the 1 st space and configured to be capable of moving the substrate between an inside of the processing container and an outside of the processing container.
11. 11. The substrate processing apparatus according to any one of claims 1 to 8, wherein, The substrate processing apparatus further includes a partition plate that suppresses the flow of gas between the 1 st space and the 2 nd space.
12. 12. The substrate processing apparatus according to claim 11, wherein, The separator is configured to overlap a part of the mounting portion when viewed from a direction in which the mounting portion is driven.
13. 13. The substrate processing apparatus according to any one of claims 1 to 7, wherein, In the (a), a suppression layer that suppresses progress of the treatment by the 2 nd gas in the (b) is formed on at least a part of the surface of the substrate.
14. 14. The substrate processing apparatus according to claim 13, wherein, In the (a), the inhibition layer is further formed at least in a part of the surface of the object in the 1 st space.
15. 15. The substrate processing apparatus according to any one of claims 1 to 8, wherein, The 1 st supply system is provided with a supply part at a position opposite to the surface of the substrate.
16. 16. The substrate processing apparatus according to any one of claims 1 to 7, wherein, The mounting portion is configured to be capable of mounting a plurality of substrates.
17. 17. The substrate processing apparatus according to any one of claims 1 to 7, wherein, The substrate processing apparatus further includes an activation unit that activates the gas in the 2 nd space by changing a potential difference between the mounting unit and a member other than the mounting unit.
18. 18. A substrate processing method, characterized in that, The method comprises the following steps of: (a) A step of supplying a1 st gas to the substrate in the 1 st space in the processing container; (b) A step of disposing the substrate in a2 nd space located above the 1 st space in the processing container; (c) And supplying a2 nd gas having a molecular structure different from that of the 1 st gas to the substrate in the 2 nd space.
19. 19. A method for manufacturing a semiconductor device, characterized in that, The method comprises the following steps of: (a) A step of supplying a1 st gas to the substrate in the 1 st space in the processing container; (b) A step of disposing the substrate in a2 nd space located above the 1 st space in the processing container; (c) And supplying a2 nd gas having a molecular structure different from that of the 1 st gas to the substrate in the 2 nd space.
20. 20. A program, characterized in that, The program causes a substrate processing apparatus to execute a process in which there is a process of sequentially performing: (a) A process of supplying the 1 st gas to the substrate in the 1 st space in the processing container; (b) A process of disposing the substrate in a2 nd space located above the 1 st space in the process container; (c) And supplying a2 nd gas having a molecular structure different from that of the 1 st gas to the substrate in the 2 nd space.

Description

Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and program Technical Field The present disclosure relates to a substrate processing apparatus, a substrate processing method, a method of manufacturing a semiconductor device, and a program. Background As one step of the substrate processing step (manufacturing step of a semiconductor device), there are cases where a gas for assisting the substrate processing by modifying the substrate surface and a gas for performing the substrate processing such as film formation on the substrate surface are supplied to the substrate, respectively. (for example, refer to patent document 1) Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2022-148256 Disclosure of Invention Problems to be solved by the invention The present disclosure is directed to providing a technique that can suppress foreign matter from adhering to a substrate. Means for solving the problems According to one aspect of the present disclosure, there is provided a technique including: A processing container including a1 st space and a 2 nd space located above the 1 st space inside; a mounting portion for mounting a substrate thereon; A driving unit that drives the mounting unit; a1 st supply system for controlling supply of a1 st gas into the process container; a2 nd supply system for controlling supply of a2 nd gas having a molecular structure different from that of the 1 st gas into the processing container; A control unit configured to control the drive unit, the 1 st supply system, and the 2 nd supply system so as to sequentially: (a) A process of supplying the 1 st gas to the substrate in the 1 st space; (b) Disposing the process of the substrate in the 2 nd space; (c) And supplying the 2 nd gas to the substrate in the 2 nd space. Effects of the invention According to the present disclosure, foreign matter can be suppressed from adhering to the substrate. Drawings Fig. 1 is a schematic cross-sectional view of a processing container of a substrate processing apparatus according to an embodiment, and is a view showing a case where a wafer is set to a1 st position. Fig. 2 is a schematic cross-sectional view of a processing container of the substrate processing apparatus according to the embodiment, and is a view showing a case where a wafer is set at the 2 nd position. Fig. 3 is a diagram showing a schematic configuration example of the gas supply unit according to the embodiment. FIG. 4 is a block diagram of a controller and its surroundings according to an embodiment Fig. 5 is an overall flowchart of the substrate processing according to the embodiment. Fig. 6 is a cross-sectional view of a processing chamber of another substrate processing apparatus. Detailed Description Hereinafter, one embodiment of the present disclosure will be described mainly with reference to fig. 1 to 6. The drawings used in the following description are schematic, and the relationship between the dimensions of the elements and the ratio of the elements shown in the drawings do not necessarily coincide with the actual situation. In addition, the dimensional relationships of the elements, the ratios of the elements, and the like do not necessarily match each other among the plurality of drawings. Elements substantially identical to those described in fig. 1 are denoted by the same reference numerals, and description thereof is omitted. Further, in the specification, each element is not limited to one unless otherwise specified, and may exist in plural. (1) Substrate processing apparatus As shown in fig. 1, the substrate processing apparatus 100 includes a processing container 201. The processing container 201 is made of a metal material such as aluminum (Al) or stainless steel (SUS). A1 st space 301 for processing a wafer 1 as a substrate by a1 st gas and a2 nd space 302 for processing the wafer 1 by a2 nd gas are provided in the processing container 201 of the processing chamber. The 2 nd space 302 is formed above the 1 st space 301. A partition 202 is provided between the 1 st space 301 and the 2 nd space 302. The process container 201 is constituted by an upper container 201a and a lower container 201 b. The 1 st space 301 and the 2 nd space 302 are both provided in the lower container 201 b. A1 st gas supply hole (1 st supply portion) 203 and a substrate carry-in/out port 500 adjacent to a gate valve 501 are provided in a side surface of the 1 st space 301 of the lower container 201 b. The wafer 1 moves between the 1 st space 301 and a transfer chamber (not shown) through the substrate carry-in/out port 500. That is, the 1 st space 301 is also a transport space for transporting the wafer 1 between the inside and the outside of the process container 201. A substrate support 232 for supporting the wafer 1 is disposed in the processing container 201. The substrate support portion 232 mainly includes a substrate stage 206 a