CN-122029978-A - Substrate processing method, semiconductor device manufacturing method, program, substrate processing apparatus, and gas supply system

Abstract

The present invention provides a technique capable of suppressing deterioration of either one or both of film characteristic uniformity in a substrate surface and film characteristic uniformity between surfaces due to insufficient supply of a raw material gas. A substrate processing method includes the steps of (a) closing a first valve of a first gas pipe, supplying a source gas from an upstream side of the first gas pipe, and storing the source gas in the first gas pipe, (b) opening the first valve of the first gas pipe, supplying a first inert gas from the upstream side of the first gas pipe, and supplying the source gas and the first inert gas from the first gas pipe to a substrate.

Inventors

• Companion seedling brave tree
• Add my friends and discipline.
• KURIBAYASHI KOEI

Assignees

• 株式会社国际电气

Dates

Publication Date

20260512

Application Date

20240124

Claims (19)

1. 1. A substrate processing method is characterized by comprising the following steps: (a) Closing a first valve of a first gas pipe, supplying a raw material gas from an upstream side of the first gas pipe, storing the raw material gas in the first gas pipe, and (B) The first valve of the first gas pipe is opened, a first inert gas is supplied from an upstream side of the first gas pipe, and the source gas and the first inert gas are supplied from the first gas pipe to the substrate.
2. 2. The method for processing a substrate according to claim 1, wherein, In (b), a second inert gas is supplied from a second gas pipe connected to the first gas pipe.
3. 3. The method for processing a substrate according to claim 2, wherein, The second gas pipe is provided downstream of the first valve.
4. 4. The method for processing a substrate according to claim 2, wherein, The second gas pipe is provided upstream of the first valve.
5. 5. The method for processing a substrate according to claim 3, wherein, The substrate processing method includes (c) supplying the second inert gas from the second gas pipe to a space where the substrate exists via the first gas pipe during (a).
6. 6. The method for processing a substrate according to claim 5, wherein, And (c) making the flow rate of the second inert gas in (b) larger than the flow rate of the second inert gas in (c).
7. 7. The method for processing a substrate according to claim 2, wherein, In (b), the flow rate of the first inert gas is made larger than the flow rate of the second inert gas.
8. 8. The method for processing a substrate according to claim 1, wherein, Has a third gas pipe connected to the first gas pipe at a position upstream of the first valve, The substrate processing method includes the steps of (d) flowing the source gas from the upstream side of the first gas pipe to the third gas pipe, After (d), performing (a).
9. 9. The method for processing a substrate according to claim 1, wherein, Has a third gas pipe connected to the first gas pipe at a position upstream of the first valve, The substrate processing method includes the step of (e) discharging the atmosphere in the first gas tube from the third gas tube before (a).
10. 10. The method for processing a substrate according to claim 8, wherein, The substrate processing method includes the step of (f) discharging the atmosphere in the first gas tube from the third gas tube before (d).
11. 11. The method for processing a substrate according to claim 1, wherein, Has a second valve provided on the upstream side of the first valve in the first gas pipe, In (a), the second valve is closed, and the raw material gas is stored on the downstream side of the second valve.
12. 12. The method for processing a substrate according to claim 11, wherein, Has a third valve provided on the upstream side of the second valve in the first gas pipe, In (a), one of the second valve and the third valve is closed according to predetermined data, and the source gas is stored downstream of the closed valve.
13. 13. The method for processing a substrate according to claim 1, wherein, A fourth valve provided on an upstream side of the first valve in the first gas pipe, The length of the first gas pipe between the first valve and the fourth valve is longer than the length of the first gas pipe between the first valve and a process container accommodating the substrate.
14. 14. The method for processing a substrate according to claim 1, wherein, The vapor pressure of the source gas is lower than the vapor pressure of the other gas supplied to the substrate.
15. 15. The method for processing a substrate according to claim 1, wherein, The raw material gas is a gas containing at least one element of Mo, zr, hf, al, in, ga and a halogen element.
16. 16. A method for manufacturing a semiconductor device is characterized by comprising the following steps: (a) Closing a first valve of a first gas pipe, supplying a raw material gas from an upstream side of the first gas pipe, storing the raw material gas in the first gas pipe, and (B) The first valve of the first gas pipe is opened, a first inert gas is supplied from an upstream side of the first gas pipe, and the source gas and the first inert gas are supplied from the first gas pipe to the substrate.
17. 17. A program, characterized in that, Causing, by a computer, a substrate processing apparatus to execute: (a) Closing a first valve of a first gas pipe, supplying a raw material gas from an upstream side of the first gas pipe, storing the raw material gas in the first gas pipe, and (B) The first valve of the first gas pipe is opened, a first inert gas is supplied from an upstream side of the first gas pipe, and the source gas and the first inert gas are supplied from the first gas pipe to the substrate.
18. 18. A substrate processing apparatus, comprising: A first gas pipe for supplying a source gas to a substrate; A first valve provided to the first gas pipe; a first inert gas supply part for supplying a first inert gas from the upstream side of the first gas pipe, and A control unit configured to control the first valve and the first inert gas supply unit to perform: (a) Closing the first valve of the first gas pipe, supplying the raw material gas from the upstream side of the first gas pipe, storing the raw material gas in the first gas pipe, and (B) The first valve of the first gas pipe is opened, the first inert gas is supplied from the upstream side of the first gas pipe, and the raw material gas and the first inert gas are supplied from the first gas pipe to the substrate.
19. 19. A gas supply system, comprising: A first gas pipe for supplying a source gas to a substrate; a first valve provided to the first gas pipe, and A first inert gas supply unit that supplies a first inert gas from an upstream side of the first gas pipe, The gas supply system is configured to control the first valve and the first inert gas supply section to perform the following processes: (a) Closing the first valve of the first gas pipe, supplying the raw material gas from the upstream side of the first gas pipe, storing the raw material gas in the first gas pipe, and (B) The first valve of the first gas pipe is opened, the first inert gas is supplied from the upstream side of the first gas pipe, and the raw material gas and the first inert gas are supplied from the first gas pipe to the substrate.

Description

Substrate processing method, semiconductor device manufacturing method, program, substrate processing apparatus, and gas supply system Technical Field The present disclosure relates to a substrate processing method, a semiconductor device manufacturing method, a program, a substrate processing apparatus, and a gas supply system. Background As a step of manufacturing a semiconductor device, a process of forming a metal film on a substrate may be performed (for example, see patent document 1). Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2021-120472 Disclosure of Invention Problems to be solved by the invention In some cases, the shortage of the supply of the source gas may deteriorate one or both of the uniformity of the film characteristics in the substrate surface and the uniformity of the film characteristics between substrates (between surfaces). The present disclosure provides a technique capable of suppressing deterioration of either or both of film characteristic uniformity in a substrate surface and film characteristic uniformity between surfaces due to insufficient supply of a raw material gas. Means for solving the problems According to one aspect of the present disclosure, there is provided a technique including: (a) Closing a first valve of a first gas pipe, supplying a raw material gas from an upstream side of the first gas pipe, storing the raw material gas in the first gas pipe, and (B) The first valve of the first gas pipe is opened, a first inert gas is supplied from an upstream side of the first gas pipe, and the source gas and the first inert gas are supplied from the first gas pipe to the substrate. Effects of the invention According to the present disclosure, deterioration of either one or both of film characteristic uniformity in a substrate surface and film characteristic uniformity between surfaces due to insufficient supply of a raw material gas can be suppressed. Drawings Fig. 1 is a schematic vertical sectional view showing a vertical processing furnace of a substrate processing apparatus according to one embodiment. Fig. 2 is a schematic configuration diagram of a controller of the substrate processing apparatus according to one embodiment, and is a diagram showing a control system of the controller in a block diagram. Fig. 3 (a) is a diagram for explaining a flow of discharging the source gas to the outside of the processing chamber. Fig. 3 (B) is a diagram for explaining a case where the source gas is stored in the gas supply pipe. Fig. 3 (C) is a diagram for explaining a flow of supplying a source gas to a process chamber. Detailed Description Hereinafter, one embodiment of the present disclosure will be described mainly with reference to fig. 1 to 3. The drawings used in the following description are schematic, and dimensional relationships of elements shown in the drawings, proportions of elements, and the like do not necessarily coincide with reality. In addition, the dimensional relationships of the elements, the proportions of the elements, and the like do not necessarily coincide with each other among the plurality of drawings. (1) Structure of substrate processing apparatus As shown in fig. 1, the processing furnace 202 has a heater 207 as a heating system (temperature adjusting section). The heater 207 has a cylindrical shape. The heater 207 also functions as an activation mechanism (excitation unit) for activating (exciting) the gas by heat. Inside the heater 207, a reaction tube 203 is disposed concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz or silicon carbide, and is formed in a cylindrical shape with a closed upper end and an open lower end. A manifold 209 (hereinafter referred to as MF 209) is disposed below the reaction tube 203 concentrically with the reaction tube 203. MF209 is made of a metal material such as stainless steel, and has a cylindrical shape with upper and lower ends open. The upper end of MF209 engages with the lower end of reaction tube 203, and supports reaction tube 203. An O-ring 220a as a sealing member is provided between MF209 and reaction tube 203. The reaction tube 203 is installed vertically as the heater 207. The reaction tube 203 and MF209 mainly constitute a treatment vessel (reaction vessel). A processing chamber 201 is formed in a cylindrical hollow portion of the processing container. The processing chamber 201 is configured to be capable of accommodating a wafer 200 as a substrate. Nozzles 249a and 249b are provided in the process chamber 201 so as to penetrate the sidewall of the MF 209. The gas supply pipes 232a and 232b as first gas pipes are connected to the nozzles 249a and 249b, respectively. The gas supply pipe 232a is provided with a vaporizer 300 for vaporizing gas, an on-off valve, i.e., a valve 302a as a fourth valve, a valve 302b as a third valve, a valve 302c as a second valve, and a valve 243a as a first