CN-122029979-A - Temperature control system, temperature control method, method for manufacturing semiconductor device, and substrate processing apparatus

Abstract

Provided is a technique capable of suppressing the temperature rise of a heating wire of an auxiliary heater and ensuring the life of the auxiliary heater. A temperature control system includes a first heater provided so as to be divided into regions and configured to heat a processing container in which a substrate is disposed, a second heater configured to assist heating of the first heater in a specific region among the regions, a temperature sensor configured to detect a temperature of the second heater, and a control unit configured to limit an output of the second heater when the temperature detected by the temperature sensor is equal to or higher than a predetermined temperature lower than a target temperature, thereby enabling the temperature in the processing container to reach the target temperature.

Inventors

• NISHIMOTO HIDEYUKI
• Okayama Premier
• Koyaki taro

Assignees

• 株式会社国际电气

Dates

Publication Date

20260512

Application Date

20240918

Priority Date

20240123

Claims (20)

1. 1. A temperature control system, comprising: a first heater provided so as to be divided into regions and configured to heat a processing container in which a substrate is disposed; a second heater that assists heating of the first heater corresponding to a specific region among the regions; a temperature sensor for detecting the temperature of the second heater, and And a control unit configured to limit the output of the second heater when the temperature detected by the temperature sensor is equal to or higher than a predetermined temperature lower than a target temperature, thereby enabling the temperature in the processing container to reach the target temperature.
2. 2. The temperature control system of claim 1, wherein the temperature control system comprises a temperature sensor, The control unit is configured to change the output of the second heater to be equal to or less than the output limit value when the output of the second heater exceeds the preset output limit value when the temperature detected by the temperature sensor reaches the predetermined temperature.
3. 3. The temperature control system of claim 1, wherein the temperature control system comprises a temperature sensor, The control unit is configured to change the output of the second heater within an output range from 0 to a preset output limit value from when the temperature detected by the temperature sensor reaches the predetermined temperature to when the temperature in the processing container is the target temperature.
4. 4. The temperature control system of claim 1, wherein the temperature control system comprises a temperature sensor, The control unit is configured to maintain the output of the second heater at a predetermined output value from the time when the temperature detected by the temperature sensor reaches the predetermined temperature to the time when the temperature in the processing container is the target temperature, wherein the predetermined output value is equal to or greater than 0 and equal to or less than a predetermined output limit value.
5. 5. The temperature control system of claim 4, wherein the temperature control system comprises a temperature sensor, The control unit is configured to set the output of the second heater to 0 from when the temperature detected by the temperature sensor reaches the predetermined temperature to when the temperature in the processing container is the target temperature.
6. 6. A temperature control system according to claim 3, wherein, The control unit is configured to change the output of the second heater by a pulse output between a preset output greater than 0 and equal to or less than the output limit value and 0 output from the time when the temperature detected by the temperature sensor reaches the predetermined temperature to the time when the temperature in the processing container is the target temperature.
7. 7. The temperature control system of claim 1, wherein the temperature control system comprises a temperature sensor, The control unit is configured to change the output of the second heater within a range equal to or less than the output at the time of reaching the predetermined temperature before the temperature in the processing container is the target temperature when the output of the second heater does not exceed a preset output limit value when the temperature detected by the temperature sensor reaches the predetermined temperature.
8. 8. The temperature control system according to any one of claim 1 to 7, wherein, The control unit is configured to be able to heat both the first heater and the second heater if the output of the second heater is equal to or less than a preset output limit value when the temperature detected by the temperature sensor is equal to or greater than the predetermined temperature.
9. 9. The temperature control system of claim 1, wherein the temperature control system comprises a temperature sensor, The control unit is configured to maintain the output of the second heater constant until the temperature detected by the temperature sensor is the predetermined temperature.
10. 10. The temperature control system of claim 1, wherein the temperature control system comprises a temperature sensor, The control unit is configured to be able to heat the temperature in the processing container facing each of the regions to the target temperature by combining heating by both the first heater and the second heater or by heating by the first heater alone.
11. 11. The temperature control system of claim 10, wherein the temperature control system comprises a temperature sensor, The control unit is configured to start the output of the second heater after starting the output of the first heater.
12. 12. The temperature control system of claim 11, wherein the temperature control system comprises a temperature sensor, The control unit is configured to output the second heater when the temperature detected by the temperature sensor reaches the predetermined temperature.
13. 13. The temperature control system of claim 12, wherein the temperature control system comprises a temperature sensor, The control unit is configured to vary the output of the second heater within an output range equal to or less than a preset output limit value.
14. 14. The temperature control system of claim 12, wherein the temperature control system comprises a temperature sensor, The control unit is configured to maintain the output of the second heater constant at an output equal to or less than a preset output limit value.
15. 15. The temperature control system of claim 1, wherein the temperature control system comprises a temperature sensor, The control unit is configured to be able to lower the temperature rise rate of the second heater than the temperature rise rate of the first heater.
16. 16. The temperature control system of claim 15, wherein the temperature control system comprises a temperature sensor, The target temperature is set higher than a temperature that the second heater can control.
17. 17. The temperature control system of claim 1, wherein the temperature control system comprises a temperature sensor, The temperature control system is provided with a first temperature sensor that detects a temperature within the process vessel, The specific region is a region having a large temperature variation detected by the first temperature sensor among the regions.
18. 18. A temperature control method is characterized by comprising the following steps: The temperature control system of claim 1, wherein the temperature within the process vessel is brought to a target temperature.
19. 19. A method for manufacturing a semiconductor device is characterized by comprising the following steps: the temperature control method according to claim 18, wherein the substrate is processed while maintaining the target temperature.
20. 20. A substrate processing apparatus, comprising: a first heater provided so as to be divided into regions and configured to heat a processing container in which a substrate is disposed; a second heater that assists heating of the first heater corresponding to a specific region among the regions; a temperature sensor for detecting the temperature of the second heater, and And a control unit configured to limit the output of the second heater when the temperature detected by the temperature sensor is equal to or higher than a predetermined temperature lower than a target temperature, thereby enabling the temperature in the processing container to be the target temperature.

Description

Temperature control system, temperature control method, method for manufacturing semiconductor device, and substrate processing apparatus Technical Field The present disclosure relates to a temperature control system, a temperature control method, a method of manufacturing a semiconductor device, and a substrate processing apparatus. Background As a step of manufacturing a semiconductor device, a predetermined process may be performed on a wafer (hereinafter, also referred to as a substrate) (for example, refer to patent documents 1 to 6). These documents describe a technique of controlling the temperature of the processing chamber by using an auxiliary heater for assisting heating of a specific region. Prior art literature Patent literature Patent document 1 International publication No. 2016/135876 Patent document 2 International publication No. 2020/261466 Patent document 3 International publication No. 2019/053807 Patent document 4 Japanese patent application laid-open No. 2016-157923 Patent document 5 International publication No. 2020/026445 Patent document 6 Japanese patent laid-open No. 2020-057796 Disclosure of Invention Problems to be solved by the invention The present disclosure provides a technique capable of suppressing a temperature rise of a heating wire of an auxiliary heater and securing a lifetime of the auxiliary heater. Means for solving the problems According to one aspect of the present disclosure, there is provided a technique having: a first heater provided so as to be divided into regions and configured to heat a processing container in which a substrate is disposed; a second heater that assists heating of the first heater corresponding to a specific region among the regions; a temperature sensor for detecting the temperature of the second heater, and And a control unit configured to limit the output of the second heater when the temperature detected by the temperature sensor is equal to or higher than a predetermined temperature lower than a target temperature, thereby enabling the temperature in the processing container to reach the target temperature. Effects of the invention According to the present disclosure, the temperature rise of the heating wire of the auxiliary heater can be suppressed, and the lifetime of the auxiliary heater can be ensured. Drawings Fig. 1 is a schematic view of a processing furnace of a substrate processing apparatus according to an embodiment of the present disclosure. Fig. 2 is a front cross-sectional view showing a sub-heater and a peripheral portion thereof of the substrate processing apparatus according to one embodiment of the present disclosure. Fig. 3 (a) is a plan view of a sub-heater of the substrate processing apparatus according to one embodiment of the present disclosure. Fig. 3 (B) is a partial longitudinal sectional view of the sub-heater shown in fig. 3 (a). Fig. 4 is a schematic configuration diagram of a controller in the substrate processing apparatus according to one embodiment of the present disclosure, and is a diagram showing a control system of the controller in a block diagram. Fig. 5 (a) is a diagram showing a first mode of temperature control by the temperature control system of the present disclosure. Fig. 5 (B) is a diagram showing a second mode of temperature control by the temperature control system of the present disclosure. Fig. 5 (C) is a diagram showing a third embodiment of temperature control by the temperature control system of the present disclosure. Fig. 6 is a block diagram of a temperature control system in the substrate processing apparatus according to one embodiment of the present disclosure. Fig. 7 (a) is a diagram for explaining a substrate processing sequence performed by the substrate processing apparatus according to one embodiment of the present disclosure. Fig. 7 (B) is a diagram for explaining a substrate processing sequence performed by the substrate processing apparatus according to one embodiment of the present disclosure, and is a graph showing temperatures at each step of the substrate processing sequence. Detailed Description (1) Structure of substrate processing apparatus Hereinafter, one embodiment of the present disclosure will be described mainly with reference to fig. 1 to 7. The drawings used in the following description are schematic, and dimensional relationships of elements shown in the drawings, proportions of elements, and the like do not necessarily coincide with reality. In addition, the dimensional relationships of the elements, the proportions of the elements, and the like do not necessarily coincide with each other among the plurality of drawings. In the drawings, substantially the same elements are denoted by the same reference numerals, and the description of the elements is given in the drawings in which the elements first appear, and the description thereof is omitted in the drawings below unless otherwise required. As shown in fig. 1, in the present embodiment, a substrate