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CN-122029980-A - Substrate processing apparatus, plasma generating apparatus, substrate processing method, method for manufacturing semiconductor device, and program

CN122029980ACN 122029980 ACN122029980 ACN 122029980ACN-122029980-A

Abstract

Provided is a technique capable of performing more uniform substrate processing. A substrate processing apparatus includes a processing chamber that processes a substrate, and a first electrode unit including a first electrode portion having a first electrode and a second electrode of equal length to each other, the first electrode being applied with high-frequency power, the second electrode being applied with a reference potential, a second electrode portion having the first electrode and the second electrode of different lengths from the first electrode and the second electrode of the first electrode portion, and a third electrode portion having the first electrode and the second electrode of different lengths from the first electrode and the second electrode of the first electrode portion, and the first electrode and the second electrode of the second electrode portion.

Inventors

  • ABURATANI YUKINORI
  • TAKEDA TAKASHI
  • Doki iichiro
  • TSUCHIYA TOMOMI

Assignees

  • 株式会社国际电气

Dates

Publication Date
20260512
Application Date
20240327

Claims (20)

  1. 1. A substrate processing apparatus, comprising: a process chamber for processing a substrate, and A first electrode unit comprising: A first electrode section having a first electrode to which high-frequency power is applied and a second electrode to which a reference potential is applied, the first electrode section having equal lengths; A second electrode portion having the first electrode and the second electrode with a length different from the first electrode and the second electrode of the first electrode portion, and A third electrode portion having the first electrode and the second electrode different in length from the first electrode and the second electrode of the first electrode portion and the first electrode and the second electrode of the second electrode portion.
  2. 2. The substrate processing apparatus according to claim 1, wherein, The number of the first electrodes is equal to the number of the second electrodes.
  3. 3. The substrate processing apparatus according to claim 1, wherein, The number of the first electrodes and the number of the second electrodes are different.
  4. 4. The substrate processing apparatus according to claim 3, wherein, A plurality of the first electrodes are provided.
  5. 5. The substrate processing apparatus according to claim 3, wherein, The first electrode is continuously configured.
  6. 6. The substrate processing apparatus according to claim 1, wherein, The lengths of the first electrode and the second electrode of the first electrode portion are longer than the lengths of the first electrode and the second electrode of the second electrode portion and the first electrode and the second electrode of the third electrode portion.
  7. 7. The substrate processing apparatus according to claim 1, wherein, The lengths of the first electrode and the second electrode of the second electrode portion are shorter than those of the first electrode and the second electrode of the first electrode portion, and longer than those of the first electrode and the second electrode of the third electrode portion.
  8. 8. The substrate processing apparatus according to claim 1, wherein, The lengths of the first and second electrodes of the third electrode part are shorter than those of the first and second electrodes of the first electrode part and the first and second electrodes of the second electrode part.
  9. 9. The substrate processing apparatus according to claim 1, wherein, The first electrode portion, the second electrode portion, and the third electrode portion are arranged in this order.
  10. 10. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus has a second electrode unit including: A fourth electrode section having a first electrode to which high-frequency power is applied and a second electrode to which a reference potential is applied, the first electrode and the second electrode having equal lengths, and A fifth electrode part having the first electrode and the second electrode with a length equal to the first electrode and the second electrode of the fourth electrode part.
  11. 11. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus has a second electrode unit including: A fourth electrode section having a first electrode to which high-frequency power is applied and a second electrode to which a reference potential is applied, the first electrode and the second electrode having equal lengths, and A fifth electrode part having the first electrode and the second electrode with different lengths from the first electrode and the second electrode of the fourth electrode part.
  12. 12. The substrate processing apparatus according to claim 10 or 11, wherein, The number of the first electrodes is equal to the number of the second electrodes.
  13. 13. The substrate processing apparatus according to claim 10 or 11, wherein, The number of the first electrodes and the number of the second electrodes are different.
  14. 14. The substrate processing apparatus according to claim 1, wherein, The first electrode unit is disposed outside the process chamber.
  15. 15. The substrate processing apparatus according to claim 12, wherein, The lengths of the first electrode and the second electrode of the first electrode part are shorter than those of the first electrode and the second electrode of the fourth electrode part.
  16. 16. The substrate processing apparatus according to claim 13, wherein, The lengths of the first and second electrodes of the first electrode part are shorter than those of the first and second electrodes of the fourth electrode part and the first and second electrodes of the fifth electrode part.
  17. 17. A plasma generating apparatus, comprising: A first electrode unit comprising: A first electrode section having a first electrode to which high-frequency power is applied and a second electrode to which a reference potential is applied, the first electrode section having equal lengths; A second electrode portion having the first electrode and the second electrode with a length different from the first electrode and the second electrode of the first electrode portion, and A third electrode portion having the first electrode and the second electrode different in length from the first electrode and the second electrode of the first electrode portion and the first electrode and the second electrode of the second electrode portion.
  18. 18. A substrate processing method is characterized by comprising the following steps: carrying the substrate into the processing chamber, and Generating plasma using a first electrode unit comprising: A first electrode section having a first electrode to which high-frequency power is applied and a second electrode to which a reference potential is applied, the first electrode section having equal lengths; A second electrode portion having the first electrode and the second electrode with a length different from the first electrode and the second electrode of the first electrode portion, and A third electrode portion having the first electrode and the second electrode different in length from the first electrode and the second electrode of the first electrode portion and the first electrode and the second electrode of the second electrode portion.
  19. 19. A method for manufacturing a semiconductor device, characterized in that, A semiconductor device manufactured using the substrate processed by the substrate processing method according to claim 18.
  20. 20. A program, characterized in that, Causing, by a computer, a substrate processing apparatus to execute: carrying the substrate into the processing chamber, and Generating plasma using a first electrode unit comprising: A first electrode section having a first electrode to which high-frequency power is applied and a second electrode to which a reference potential is applied, the first electrode section having equal lengths; A second electrode portion having the first electrode and the second electrode with a length different from the first electrode and the second electrode of the first electrode portion, and A third electrode portion having the first electrode and the second electrode different in length from the first electrode and the second electrode of the first electrode portion and the first electrode and the second electrode of the second electrode portion.

Description

Substrate processing apparatus, plasma generating apparatus, substrate processing method, method for manufacturing semiconductor device, and program Technical Field The present disclosure relates to a substrate processing apparatus, a plasma generating apparatus, a substrate processing method, a method of manufacturing a semiconductor device, and a program. Background As one of the steps of manufacturing a semiconductor device, there is a case where a substrate is carried into a processing chamber of a substrate processing apparatus, a source gas and a reaction gas are supplied into the processing chamber, and various films such as an insulating film, a semiconductor film, and a conductor film are formed on the substrate, or the various films are removed. In a mass-produced device for forming a fine pattern, low temperature may be desired in order to suppress diffusion of impurities or to enable use of a material having low heat resistance such as an organic material. Prior art literature Patent literature Patent document 1 Japanese patent laid-open No. 2007-324477 Disclosure of Invention Problems to be solved by the invention In order to solve such a problem, a plasma is generally used for substrate treatment, but it is sometimes difficult to uniformly treat a film. The present disclosure provides a technique that enables more uniform substrate processing. Means for solving the problems According to one aspect of the present disclosure, there is provided a technique having: a process chamber for processing a substrate, and A first electrode unit comprising: A first electrode section having a first electrode to which high-frequency power is applied and a second electrode to which a reference potential is applied, the first electrode section having equal lengths; A second electrode portion having the first electrode and the second electrode with a length different from the first electrode and the second electrode of the first electrode portion, and A third electrode portion having the first electrode and the second electrode different in length from the first electrode and the second electrode of the first electrode portion and the first electrode and the second electrode of the second electrode portion. Effects of the invention According to the present disclosure, more uniform substrate processing can be performed. Drawings Fig. 1 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus preferably used in the embodiment of the present disclosure, and is a view showing a processing furnace portion in a vertical section. Fig. 2 is a cross-sectional view of A-A of the substrate processing apparatus shown in fig. 1. Fig. 3 (a) is a perspective view of an electrode according to an embodiment of the present disclosure when the electrode is provided to an electrode holder, and fig. 3 (b) is a view for showing a positional relationship between a heater, an electrode holder, an electrode, a protrusion for fixing the electrode, and a reaction tube according to an embodiment of the present disclosure. Fig. 4 (a) is a front view of an electrode in an embodiment of the present disclosure, and fig. 4 (b) is a view illustrating a point that the electrode is fixed to an electrode holder. Fig. 5 is a diagram illustrating the height of an electrode portion of an electrode unit in an embodiment of the present disclosure. Fig. 6 is a schematic configuration diagram of a controller in the substrate processing apparatus shown in fig. 1, and is a block diagram showing an example of a control system of the controller. Fig. 7 is a flowchart showing an example of a substrate processing process using the substrate processing apparatus shown in fig. 1. Fig. 8 is a diagram illustrating the height of an electrode portion of an electrode unit in modification 1 of the present disclosure. Fig. 9 is a diagram illustrating the height of an electrode portion of an electrode unit in modification 2 of the present disclosure. Fig. 10 is a diagram illustrating the height of an electrode portion of an electrode unit in modification 3 of the present disclosure. Detailed Description Hereinafter, embodiments of the present disclosure will be described with reference to fig. 1 to 7. The drawings used in the following description are schematic, and dimensional relationships of elements shown in the drawings, proportions of elements, and the like do not necessarily coincide with reality. In addition, the dimensional relationships of the elements, the proportions of the elements, and the like do not necessarily coincide with each other among the plurality of drawings. If not specifically described in the specification, the elements are not limited to one, and may be present in plural. (1) Structure of substrate processing apparatus (Heating device) As shown in FIG. 1, a processing furnace 202 of the vertical substrate processing apparatus has a heater 207 as a heating means. The heating device is also call