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CN-122029981-A - Substrate processing method, semiconductor device manufacturing method, program, and substrate processing apparatus

CN122029981ACN 122029981 ACN122029981 ACN 122029981ACN-122029981-A

Abstract

Provided is a technique capable of improving film characteristics. A substrate processing method includes the steps of a) supplying a first raw material to a substrate, b) supplying a first reactant to the substrate in a first amount, c) supplying a second reactant to the substrate in a second amount, d) performing a predetermined number of times a) and b) to form a first layer on the substrate, e) performing a predetermined number of times a) and c) to form a second layer on the substrate.

Inventors

  • Watanabe Yongfu
  • ASAI MASAYUKI
  • Black tailed gauze script
  • SANO ATSUSHI

Assignees

  • 株式会社国际电气

Dates

Publication Date
20260512
Application Date
20240926
Priority Date
20240326

Claims (20)

  1. 1. A substrate processing method is characterized by comprising the following steps: a) Supplying a first raw material to a substrate; b) Supplying a first reactant to the substrate in a first amount; c) Supplying a second reactant to the substrate in a second amount; d) Performing a) and b) a prescribed number of times to form a first layer on the substrate, and E) Performing a) and c) a prescribed number of times, and forming a second layer on the substrate.
  2. 2. The method for processing a substrate according to claim 1, wherein, The first amount and the second amount are different amounts.
  3. 3. The method for processing a substrate according to claim 1, wherein, The second amount is a smaller amount than the first amount.
  4. 4. The method for processing a substrate according to claim 1, wherein, The substrate processing method further includes the step of laminating the first layer and the second layer by performing d) and e) a predetermined number of times.
  5. 5. The method for processing a substrate according to claim 1, wherein, The substrate processing method further includes the steps of f) supplying a second raw material to the substrate, In d), a), b), f) are performed a predetermined number of times, In e), a), c), f) are performed a predetermined number of times.
  6. 6. The method for processing a substrate according to claim 5, wherein, The first feedstock comprising a first element, the second feedstock comprising a second element, The ratio of the first element to the second element contained in the first layer is close to the ratio of the first element to the second element contained in the second layer.
  7. 7. The method for processing a substrate according to claim 1, wherein, The substrate processing method further includes the step of g) modifying the first layer and the second layer.
  8. 8. The method for processing a substrate according to claim 7, wherein, In g), crystallizing the first layer and modifying the second layer to include an amorphous layer.
  9. 9. The method for processing a substrate according to claim 7, wherein, The first layer is a layer which can be crystallized by modification, and the second layer is a layer which can be amorphous by modification.
  10. 10. The method for processing a substrate according to claim 7, wherein, The modification is a heat treatment.
  11. 11. The method for processing a substrate according to claim 1, wherein, The first reactant has a different oxidizing capacity than the second reactant.
  12. 12. The method for processing a substrate according to claim 1, wherein, The second reactant has a weaker oxidizing ability than the first reactant.
  13. 13. The method for processing a substrate according to claim 1, wherein, The first reactant is supplied in a different amount than the second reactant.
  14. 14. The method for processing a substrate according to claim 1, wherein, The supply amount of the second reactant is an amount less than the supply amount of the first reactant.
  15. 15. The method for processing a substrate according to claim 1, wherein, The partial pressure of the second reactant is less than the partial pressure of the first reactant.
  16. 16. The method for processing a substrate according to claim 1, wherein, The second reactant is supplied at a flow rate less than the flow rate of the first reactant.
  17. 17. The method for processing a substrate according to claim 1, wherein, The first reactant and the second reactant are different materials.
  18. 18. A method for manufacturing a semiconductor device is characterized by comprising the following steps: a) Supplying a first raw material to a substrate; b) Supplying a first reactant to the substrate in a first amount; c) Supplying a second reactant to the substrate in a second amount; d) Performing a) and b) a prescribed number of times to form a first layer on the substrate, and E) Performing a) and c) a prescribed number of times, and forming a second layer on the substrate.
  19. 19. A program, characterized in that, Causing, by a computer, a substrate processing apparatus to execute: a) Supplying a first raw material to a substrate; b) Supplying a first reactant to the substrate in a first amount; c) Supplying a second reactant to the substrate in a second amount; d) Performing a) and b) a prescribed number of times to form a first layer on the substrate, and E) Performing a) and c) a prescribed number of times, and forming a second layer on the substrate.
  20. 20. A substrate processing apparatus, comprising: a first supply unit that supplies a first raw material to a substrate; a second supply unit that supplies a first reactant to the substrate; A third supply unit for supplying a second reactant to the substrate, and A control unit configured to control the first supply unit, the second supply unit, and the third supply unit to perform the following processes: a) Supplying the first raw material to the substrate; b) Supplying the first reactant to the substrate in a first amount; c) Supplying the second reactant to the substrate in a second amount; d) Performing a) and b) a prescribed number of times to form a first layer on the substrate, and E) Performing a) and c) a prescribed number of times, and forming a second layer on the substrate.

Description

Substrate processing method, semiconductor device manufacturing method, program, and substrate processing apparatus Technical Field The present disclosure relates to a substrate processing method, a method of manufacturing a semiconductor device, a program, and a substrate processing apparatus. Background As a step of manufacturing a semiconductor device, a process of forming a film on a substrate may be performed (for example, see patent document 1). Prior art literature Patent literature Patent document 1 Japanese patent laid-open No. 2008-124184 Disclosure of Invention Problems to be solved by the invention The present disclosure provides a technique capable of improving film characteristics. Means for solving the problems According to one aspect of the present disclosure, there is provided a technique including: a) Supplying a first raw material to a substrate; b) Supplying a first reactant to the substrate in a first amount; c) Supplying a second reactant to the substrate in a second amount; d) Performing a) and b) a prescribed number of times to form a first layer on the substrate, and E) Performing a) and c) a prescribed number of times, and forming a second layer on the substrate. Effects of the invention According to the present disclosure, film characteristics can be improved. Drawings Fig. 1 is a schematic longitudinal sectional view showing a substrate processing apparatus. Fig. 2 is a schematic cross-sectional view taken along line A-A in fig. 2. Fig. 3 is a schematic configuration diagram of a controller of the substrate processing apparatus, and is a diagram showing a control system of the controller in a block diagram. Fig. 4 is a series of flowcharts including a substrate processing process. Fig. 5 is a flowchart of the first process-modifying process. Detailed Description < One embodiment of the present disclosure > Hereinafter, one embodiment of the present disclosure will be described mainly with reference to fig. 1 to 5. The drawings used in the following description are schematic, and dimensional relationships of elements shown in the drawings, proportions of elements, and the like do not necessarily coincide with reality. In addition, the dimensional relationships of the elements, the proportions of the elements, and the like do not necessarily coincide with each other among the plurality of drawings. (1) Structure of substrate processing apparatus The substrate processing apparatus 10 includes a processing furnace 202 provided with a heater 207 as a heating unit (heating mechanism, heating system). The heater 207 is cylindrical and is vertically mounted by being supported by a heater base (not shown) serving as a holding plate. An outer tube 203 constituting a processing container is disposed inside the heater 207 concentrically with the heater 207. The outer tube 203 is made of a heat resistant material such as quartz or silicon carbide (SiC), and is formed in a cylindrical shape with a closed upper end and an open lower end. A manifold (header tank) 209 (hereinafter referred to as MF 209) is disposed below the outer tube 203 concentrically with the outer tube 203. MF209 is made of a metal such as stainless steel, and has a cylindrical shape with upper and lower ends open. An O-ring 220a as a sealing member is provided between the upper end portion of the MF209 and the outer tube 203. MF209 is supported by the heater base, and thereby outer tube 203 is vertically mounted. An inner tube 204 constituting a processing vessel is disposed inside the outer tube 203. The inner tube 204 is made of a heat-resistant material such as quartz or SiC, and is formed in a cylindrical shape with a closed upper end and an open lower end. The treatment vessel is mainly composed of an outer tube 203, an inner tube 204 and an MF 209. A processing chamber 201 is formed in a cylindrical hollow portion (inside of the inner tube 204) of the processing container. The processing chamber 201 is configured to accommodate wafers 200 as substrates in a state of being arranged in multiple layers in the vertical direction in a horizontal posture by a wafer boat 217 described later. In the processing chamber 201, nozzles 410, 420, 430, 440 are provided so as to penetrate the side wall of the MF209 and the inner tube 204. The gas supply pipes 310, 320, 330, 340 are connected to the nozzles 410, 420, 430, 440, respectively. However, the treatment furnace 202 of the present embodiment is not limited to the above-described embodiment. The gas supply pipes 310, 320, 330, 340 are provided with Mass Flow Controllers (MFCs) 312, 322, 332, 342 as flow controllers (flow control units), respectively, in order from the upstream side. Further, valves 314, 324, 334, 344 serving as on-off valves are provided in the gas supply pipes 310, 320, 330, 340, respectively. Gas supply pipes 510, 520, 530, 540 for supplying inert gas are connected to the downstream sides of the valves 314, 324, 334, 344 of the gas supply pipes 310, 320, 330