CN-122029982-A - Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and program

Abstract

The method includes a step (a) of forming a film of a predetermined substance containing a1 st element on a substrate by performing a cycle including the step (a 1) a predetermined number of times, wherein the step (a 1) is to supply a1 st gas to the substrate having a recess on the surface thereof under a predetermined condition, and to form a1 st substance containing the 1 st element on the surface of the substrate, wherein the predetermined condition satisfies a temperature condition that the temperature of the substrate is equal to or higher than a decomposition temperature of the 1 st gas and a1 st condition that an adsorption amount of the 1 st substance at an opening of the recess, i.e., an opening adsorption amount, is increased in a1 st period after starting to supply the 1 st gas, and the opening adsorption amount is gradually made to approach a predetermined value in a 2 nd period after the 1 st period, and the opening adsorption amount is increased in a 3 rd period after the 2 nd period, and the step (a 1) is ended in the 2 nd period.

Inventors

• Tao Shanzhu
• Xiaochu Hongzhi
• TANAKA SHOTA

Assignees

• 株式会社国际电气

Dates

Publication Date

20260512

Application Date

20241018

Priority Date

20240326

Claims (20)

1. 1. A substrate processing method, comprising: A step (a) of forming a film of a predetermined substance containing an element 1 on a substrate by performing a cycle including the step (a 1) a predetermined number of times, wherein the step (a 1) is to supply a1 st gas to the substrate having a recess on the surface thereof under a predetermined condition, and form the 1 st substance containing the element 1 on the surface of the substrate, The above specified conditions satisfy the temperature condition and the 1 st condition, The temperature condition is that the temperature of the substrate is set to be equal to or higher than the decomposition temperature of the 1 st gas, In condition 1, in a period 1 after the start of the supply of the 1 st gas, an opening adsorption amount, which is an adsorption amount of the 1 st substance, at an opening of the recess is increased, in a period 2 after the period 1, the opening adsorption amount is gradually brought close to a predetermined value, in a period 3 after the period 2, the opening adsorption amount is increased, (A1) The process ends in the above-mentioned period 2.
2. 2. The method for processing a substrate according to claim 1, wherein, The above specified condition also satisfies condition 2, In the condition 2, in a 4 th period after the start of the supply of the 1 st gas, a deep adsorption amount, which is an adsorption amount of the 1 st substance, in a deep portion of the recess is increased, and in a5 th period after the 4 th period, the deep adsorption amount is gradually brought close to the predetermined value, and after the start of the 2 nd period, the 5 th period is started.
3. 3. The method for processing a substrate according to claim 2, wherein, The above specified condition also satisfies the 3 rd condition, The 3 rd condition is that the 5 th period starts before the 2 nd period ends.
4. 4. The method for processing a substrate according to claim 3, wherein, In (a 1), the supply of the 1 st gas to the substrate is terminated in a6 th period overlapping the 2 nd period and the 5 th period.
5. 5. The method for treating a substrate according to any one of claims 1 to 4, wherein, In (a 1), the decomposition rate of the 1 st gas in the space where the substrate exists is set to 0% in at least a part of a supply time which is a time from the start of the supply of the 1 st gas to the substrate to the end of the supply.
6. 6. The method for treating a substrate according to any one of claims 1 to 4, wherein, The cycle further includes a step (a 0) of storing the 1 st gas in a storage unit, In (a 1), at least a part of the 1 st gas stored in the storage portion in (a 0) is supplied to the substrate.
7. 7. The method for treating a substrate according to any one of claims 1 to 4, wherein, In (a 1), the pressure in the space where the substrate exists is maximized from the start of the supply of the 1 st gas to the end of the supply of the 1 st gas.
8. 8. The method for processing a substrate according to claim 7, wherein, In (a 1), the pressure in the space at the time point when the supply of the 1 st gas is completed is set to be not less than half of the maximum value and not more than the maximum value.
9. 9. The method for treating a substrate according to any one of claims 1 to 4, wherein, The cycle further includes a step (b) of supplying a2 nd gas for modifying the 1 st substance to the substrate.
10. 10. The method for treating a substrate according to any one of claims 1 to 4, wherein, The 1 st gas is a gas containing 2 or more atoms of a predetermined element in a molecular structure.
11. 11. The method for processing a substrate according to claim 4, wherein, The substrate processing method further includes a step (c) of: (c1) A step of supplying the 1 st gas to a test substrate having a test recess on a surface thereof under test conditions, and forming the film on the test recess; (c2) A step of creating a1 st graph, wherein the 1 st graph is a graph of the 1 st elapsed time, which is the elapsed time from the start of (c 1), and the thickness of the film formed at the opening of the test recess; (c3) A step of confirming that the test condition satisfies the condition 1 based on the graph 1, The test conditions were used as the predetermined conditions.
12. 12. The method for processing a substrate according to claim 11, wherein, The substrate processing method further includes a step (d 1) of setting a time from a start (a 1) to an end based on the 1 st graph so that (a 1) ends in the 2 nd period.
13. 13. The method for processing a substrate according to claim 11, wherein, The step (c) further comprises the steps of: (c4) A step of creating a2 nd graph, wherein the 2 nd graph is a relationship between the 1 st elapsed time and the thickness of the film formed in the deep portion of the test recess; (c5) And a step of confirming that the test condition satisfies the 2 nd condition based on the 1 st graph and the 2 nd graph.
14. 14. The method for processing a substrate according to claim 13, wherein, The step (c) further comprises the steps of: (c6) And a step of confirming that the test condition satisfies the 3 rd condition based on the 1 st graph and the 2 nd graph.
15. 15. The method for processing a substrate according to claim 14, wherein, The substrate processing method further includes a step (d 2) of setting a time from a start (a 1) to an end based on the 1 st graph and the 2 nd graph so that (a 1) ends in the 6 th period.
16. 16. The method for treating a substrate according to any one of claims 1 to 4, wherein, The substrate processing method further includes a step (e) of: (e1) A step of supplying the 1 st gas to a test substrate under test conditions, and forming the film on the test substrate; (e2) A step of obtaining a1 st graph, wherein the 1 st graph is a relation between a1 st elapsed time, which is an elapsed time from the start of (e 1), and a thickness of the film formed on the test substrate; (e3) A step of confirming that the test condition satisfies the condition 1 based on the graph 1, The test conditions were used as the predetermined conditions.
17. 17. The method for processing a substrate according to claim 16, wherein, The substrate processing method further includes a step (f) of setting a time from a start (a 1) to an end based on the 1 st graph so that (a 1) ends in the 2 nd period.
18. 18. A method for manufacturing a semiconductor device, characterized in that, The manufacturing method comprises a step (a) of forming a film of a predetermined substance containing the 1 st element on a substrate by performing a cycle including the step (a 1) a predetermined number of times, wherein the step (a 1) is to supply the 1 st gas to the substrate having the recess on the surface thereof under a predetermined condition, and form the 1 st substance containing the 1 st element on the surface of the substrate, The above specified conditions satisfy the temperature condition and the 1 st condition, The temperature condition is that the temperature of the substrate is set to be equal to or higher than the decomposition temperature of the 1 st gas, In condition 1, in a period 1 after the start of the supply of the 1 st gas, an opening adsorption amount, which is an adsorption amount of the 1 st substance, at an opening of the recess is increased, in a period 2 after the period 1, the opening adsorption amount is gradually brought close to a predetermined value, in a period 3 after the period 2, the opening adsorption amount is increased, (A1) The process ends in the above-mentioned period 2.
19. 19. A substrate processing apparatus, comprising: a1 st gas supply system for supplying a1 st gas to a substrate having a recess on a surface thereof; a temperature control unit for controlling the temperature of the substrate; A control unit configured to control the 1 st gas supply system and the temperature control unit so as to perform a process of forming a film of a predetermined substance containing the 1 st element on the substrate by performing a cycle including a process (a 1) a predetermined number of times, wherein the process (a 1) is a process of supplying the 1 st gas to the substrate under a predetermined condition and forming the 1 st substance containing the 1 st element on a surface of the substrate, The above specified conditions satisfy the temperature condition and the 1 st condition, The temperature condition is that the temperature of the substrate is set to be equal to or higher than the decomposition temperature of the 1 st gas, In condition 1, in a period 1 after the start of the supply of the 1 st gas, an opening adsorption amount, which is an adsorption amount of the 1 st substance, at an opening of the recess is increased, in a period 2 after the period 1, the opening adsorption amount is gradually brought close to a predetermined value, in a period 3 after the period 2, the opening adsorption amount is increased, (A1) The process ends in the above-mentioned period 2.
20. 20. A program, characterized in that, The program causes the substrate processing apparatus to execute a process, The process comprises a step (a) of forming a film of a predetermined substance containing an element 1 on a substrate by performing a cycle including a step (a 1) for a predetermined number of times, wherein the step (a 1) is to supply a1 st gas to the substrate having a recess on the surface thereof under a predetermined condition, and form the 1 st substance containing the element 1 on the surface of the substrate, The above specified conditions satisfy the temperature condition and the 1 st condition, The temperature condition is that the temperature of the substrate is set to be equal to or higher than the decomposition temperature of the 1 st gas, In condition 1, in a period 1 after the start of the supply of the 1 st gas, an opening adsorption amount, which is an adsorption amount of the 1 st substance, at an opening of the recess is increased, in a period 2 after the period 1, the opening adsorption amount is gradually brought close to a predetermined value, in a period 3 after the period 2, the opening adsorption amount is increased, (A1) The process ends in the above-mentioned period 2.

Description

Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and program Technical Field The invention relates to a substrate processing method, a semiconductor device manufacturing method, a substrate processing apparatus and a program. Background When a gas is supplied to a substrate, the temperature of the substrate may be set to be equal to or higher than the decomposition temperature of the gas, and the substrate may be processed (for example, refer to patent document 1). Prior art literature Patent literature Patent document 1 Japanese patent laid-open No. 2020-13630 Disclosure of Invention Problems to be solved by the invention The present invention provides a technique capable of improving at least one of film characteristics and step coverage. Technical means for solving the problems According to one aspect of the present invention, there is provided a technique comprising a step (a) of forming a film of a predetermined substance containing an element 1 on a substrate by performing a cycle including the step (a 1) a predetermined number of times, wherein the step (a 1) is performed by supplying a1 st gas to the substrate having a recess on a surface thereof under a predetermined condition, and forming the 1 st substance containing the element 1 on the surface of the substrate, The above specified condition satisfies the temperature condition and the 1 st condition, The temperature condition is that the temperature of the substrate is set to be equal to or higher than the decomposition temperature of the 1 st gas, In condition 1, in a period 1 after the start of the supply of the 1 st gas, an opening adsorption amount, which is an adsorption amount of the 1 st substance, at an opening of the recess is increased, in a period 2 after the period 1, the opening adsorption amount is gradually brought close to a predetermined value, in a period 3 after the period 2, the opening adsorption amount is increased, (A1) The process ends in the above-mentioned period 2. Technical effects According to the present invention, at least one of the characteristics and step coverage of the film can be improved. Drawings Fig. 1 is a schematic longitudinal sectional view showing a substrate processing apparatus according to an embodiment of the present invention. Fig. 2 (a) is a diagram showing a1 st gas supply system according to an embodiment of the present invention. Fig. 2 (B) is a diagram showing the 2 nd gas supply system according to an embodiment of the present invention. Fig. 2 (C) is a diagram showing an exhaust system according to an embodiment of the present invention. Fig. 3 is a schematic configuration diagram of a controller of a substrate processing apparatus according to an embodiment of the present invention, and is a diagram showing a control system of the controller in a block diagram. Fig. 4 is a schematic view of a vertical section of a recess formed in a substrate according to an embodiment of the present invention. Fig. 5 (a) is a schematic diagram showing a time change in the opening adsorption amount a top according to an embodiment of the present invention. Fig. 5 (B) is a schematic diagram showing the time variation of the deep adsorption amount a btm according to an embodiment of the present invention. Fig. 6 (a) is a diagram schematically showing a change in the decomposition rate of the 1 st gas in the processing chamber with respect to the elapsed time from the start of the supply of the 1 st gas in the embodiment of the present invention. Fig. 6 (B) is a diagram schematically showing a change in the flow rate of the 1 st gas in the processing chamber with respect to the elapsed time from the start of the supply of the 1 st gas in the embodiment of the present invention. Fig. 6 (C) is a diagram schematically showing a change in pressure in the processing chamber with respect to an elapsed time from the start of supply of the 1 st gas in the embodiment of the present invention. Fig. 7 (a) is a flowchart of a substrate processing process according to an embodiment of the present invention. Fig. 7 (B) is a flowchart of a processing procedure in an embodiment of the present invention. Fig. 7 (C) is a flowchart of the 1 st gas supply process in one embodiment of the present invention. Fig. 7 (D) is a flowchart of a preparation process in an embodiment of the present invention. Detailed Description Hereinafter, one embodiment of the present invention will be described mainly with reference to (a) to (C) in fig. 1 and 2, (a) in fig. 3, 4, and 5, (B) in fig. 5, (a) to (C) in fig. 6, and (a) to (D) in fig. 7. The drawings used in the following description are schematic drawings, and dimensional relationships of elements, ratios of elements, and the like shown in the drawings do not necessarily coincide with actual ones. In addition, the dimensional relationships of the elements, the ratios of the elements, and the like do not necessarily coincide with each