CN-122029985-A - Adjustment method and plasma processing system

Abstract

A method for controlling a plasma processing chamber capable of supplying a tungsten-containing gas into the chamber and performing plasma processing on a substrate accommodated therein, comprising the steps of (A) removing moisture from the interior of the plasma processing chamber by using a gas not containing the tungsten-containing gas, and (B) controlling the internal environment of the plasma processing chamber by generating plasma while supplying the gas containing the tungsten-containing gas after the step of (A).

Inventors

• Min Sheng Min Sheng
• SUGAWARA MEGUMI
• UENO ATSUSHI
• Banse Takawai

Assignees

• 东京毅力科创株式会社

Dates

Publication Date

20260512

Application Date

20241009

Priority Date

20231023

Claims (10)

1. 1. A method for adjusting a plasma processing chamber capable of supplying a tungsten-containing gas into the chamber and performing plasma processing on a substrate accommodated in the chamber, comprising the steps of: (A) A step of removing moisture from the plasma processing chamber by using a gas not containing the tungsten-containing gas, and (B) And (c) after the step (a), generating plasma while supplying a gas containing the tungsten-containing gas, thereby adjusting the internal environment of the plasma processing chamber.
2. 2. The adjustment method according to claim 1, having: (C) After the step (B), performing calibration of a flow controller for controlling the flow rate of the tungsten-containing gas.
3. 3. The adjustment method according to claim 1 or 2, wherein, The tungsten-containing gas includes any one of WF 6 gas, WCl 5 gas, or WCl 6 gas.
4. 4. The method of claim 3, wherein, In the step (B), the tungsten-containing gas is supplied in an amount larger than that in the case of actually performing plasma processing on the substrate accommodated in the plasma processing chamber.
5. 5. The adjustment method according to claim 1 or 2, wherein, In the step (a), a CF-containing gas and an O 2 gas are supplied as a gas not containing the tungsten-containing gas.
6. 6. The adjustment method according to claim 1 or 2, wherein, The step (a) is to repeat a process of generating plasma while supplying a gas containing no tungsten gas to the plasma processing chamber a plurality of times.
7. 7. The method of claim 6, wherein, The number of times of the treatment in the step (A) is set to 30 to 50 times.
8. 8. The adjustment method according to claim 1 or 2, wherein, The step (B) is to repeat the process of generating plasma while supplying a gas containing the tungsten-containing gas to the plasma processing chamber a plurality of times.
9. 9. The method of claim 8, wherein, The number of times of the treatment in the step (B) is set to 30 to 60 times.
10. 10. A plasma processing system, comprising: a plasma processing chamber; a gas supply unit configured to supply a tungsten-containing gas into the plasma processing chamber; A power supply for supplying power to the plasma processing chamber to generate plasma, and A control unit for controlling the gas supply unit and the power supply, The control unit controls the following steps: (A) A step of removing moisture from the plasma processing chamber by using a gas not containing the tungsten-containing gas, and (B) And (c) after the step (a), generating plasma while supplying a gas containing the tungsten-containing gas, thereby adjusting the internal environment of the plasma processing chamber.

Description

Adjustment method and plasma processing system Technical Field The present disclosure relates to conditioning methods and plasma processing systems. Background Patent document 1 discloses a plasma processing system in which a substrate having a mask film on the upper portion of a pattern is accommodated in a plasma processing chamber, and a tungsten-containing gas is supplied into the plasma processing chamber, thereby forming a protective film on the mask film. In such a plasma processing system, when maintenance is performed to remove a film attached to a component or the like in a plasma processing chamber, for example, a processing container is opened to replace a consumable part or the inside of the processing container is cleaned. When the processing vessel is opened, moisture in the atmosphere may be adsorbed to the interior or components of the processing vessel. In this case, moisture remains in the processing container after maintenance. Therefore, the plasma processing apparatus performs a process of removing moisture adhering to the inside or parts of the processing container after maintenance. < Prior art document > < Patent document > Patent document 1 Japanese patent application laid-open No. 2023-111329 Disclosure of Invention < Problem to be solved by the invention > The present disclosure provides a technique capable of stably performing plasma treatment for supplying a tungsten-containing gas after maintenance, start-up of an apparatus, or the like. < Means for solving the problems > According to one embodiment of the present disclosure, there is provided a method for controlling a plasma processing chamber capable of supplying a tungsten-containing gas into the chamber and performing plasma processing on a substrate accommodated therein, the method comprising (A) a step of removing moisture from the inside of the plasma processing chamber by using a gas not containing the tungsten-containing gas, and (B) a step of controlling the internal environment of the plasma processing chamber by generating plasma while supplying a gas containing the tungsten-containing gas after the step (A). < Effect of the invention > According to one embodiment, plasma treatment for supplying tungsten-containing gas can be stably performed after maintenance, start-up of the apparatus, or the like. Drawings Fig. 1 schematically illustrates a plasma processing system according to an embodiment. Fig. 2 is a schematic diagram showing a reaction example of WF gas in the plasma processing chamber with respect to a member to which moisture is attached. Fig. 3 is a flowchart showing a process flow of the adjustment method according to the embodiment. Fig. 4 (a) is a table illustrating the processing conditions in the moisture removal step. Fig. 4 (B) is a table showing the relationship between the number of cycles of the dry cleaning process and the luminous intensity of hydrogen remaining in the plasma processing chamber. Fig. 5 (a) is a table illustrating the processing conditions in the air-drying step. Fig. 5 (B) is a table showing the relationship between the number of cycles of the air-drying process and the etching rate of the silicon oxide film to be performed in the plasma processing chamber 10. Fig. 6 is a graph comparing the flow rate of WF gas in the case where the flow rate calibration process is performed and in the case where the flow rate calibration process is not performed. Fig. 7 is a time-series diagram of the adjustment method according to the embodiment. Detailed Description The following describes modes for carrying out the present disclosure with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and overlapping description may be omitted. Fig. 1 schematically illustrates a plasma processing system according to an embodiment. First, a configuration example of a plasma processing system will be described with reference to fig. 1. The plasma processing system includes a capacitively-coupled plasma processing apparatus 1 and a control section 2. The capacitively-coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply section 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 further includes a substrate support portion 11 and a gas introduction portion. The gas introduction portion is configured to be capable of introducing at least one process gas into the plasma processing chamber 10. The gas introduction portion includes a showerhead 13. The substrate support 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the top (ceiling) of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The pla