CN-122029986-A - Processing method, semiconductor device manufacturing method, processing device, and program

Abstract

The method includes the steps of (a) exposing a substrate having a first material and a second material containing the same element as the first material on the surface thereof to a modifying agent to modify the surface of the first material so that at least a part X of the molecular structure of molecules constituting the modifying agent is adsorbed on the surface of the first material to form a first inhibitor layer, and (b) exposing the substrate modified on the surface of the first material to an etchant to etch the second material.

Inventors

• Chu Beiqiu
• KATAGIRI HIDEAKI
• Hayakida Takayuki
• Nitta Shou
• NAKAYA KIMIHIKO

Assignees

• 株式会社国际电气

Dates

Publication Date

20260512

Application Date

20240315

Claims (20)

1. 1. A treatment method is characterized by comprising the following steps: (a) Exposing a substrate having a first material and a second material containing the same element as the first material on the surface to a modifying agent to modify the surface of the first material so that at least a part X of the molecular structure of molecules constituting the modifying agent is adsorbed on the surface of the first material to form a first inhibitor layer, and (B) The substrate, after modifying the surface of the first material, is exposed to an etchant, thereby etching the second material.
2. 2. A process according to claim 1, wherein, The first material and the second material each comprise the same plurality of elements, the first material comprising a film of a first composition, the second material comprising a film of a second composition different from the first composition.
3. 3. A process according to claim 1, wherein, The first material and the second material each comprise the same plurality of elements, the first material comprising a film of stoichiometric composition, the second material comprising a film of non-stoichiometric composition.
4. 4. A process according to claim 1, wherein, The second material has a density lower than the first material.
5. 5. A process according to claim 1, wherein, The first material and the second material each contain a first element and a second element, and the second element contained in the second material has a lower atomic concentration than the second element contained in the first material.
6. 6. A process according to claim 1, wherein, The density of adsorption sites on the surface of the second material is lower than the density of adsorption sites on the surface of the first material.
7. 7. A process according to claim 1, wherein, The density of hydroxyl ends of the surface of the second material is lower than the density of hydroxyl ends of the surface of the first material.
8. 8. A process according to claim 1, wherein, The first material includes a thermal oxide film, and the second material includes at least any one of a natural oxide film and a chemical oxide film.
9. 9. A process according to claim 1, wherein, The first material includes a deposited oxide film, and the second material includes at least any one of a natural oxide film and a chemical oxide film.
10. 10. A process according to claim 1, wherein, The first material comprises a SiO 2 film and the second material comprises a SiO x film, wherein x is a real number less than 2.
11. 11. A process according to any one of claims 1 to 10, characterized in that, In (a), the X is adsorbed on the surface of the second material to form a second inhibitor layer.
12. 12. A process according to claim 11, wherein, The second inhibitor layer has a lower density than the first inhibitor layer.
13. 13. A process according to claim 11, wherein, The second inhibitor layer comprises a discontinuous layer and the first inhibitor layer comprises a continuous layer.
14. 14. A process according to claim 11, wherein, The density of the X adsorbed to the surface of the second material is lower than the density of the X adsorbed to the surface of the first material.
15. 15. A process according to any one of claims 1 to 10, characterized in that, The modifier contains at least any one of a hydrocarbon group and an amino group.
16. 16. A process according to any one of claims 1 to 10, characterized in that, The etchant comprises a fluorine-containing species.
17. 17. A process according to any one of claims 1 to 10, characterized in that, The etchant contains at least any one of a hydrogen fluoride gas and an aqueous hydrogen fluoride solution.
18. 18. A process according to any one of claims 1 to 10, characterized in that, Performing (b) under conditions that inhibit at least any one of removal and invalidation of the first inhibitor layer.
19. 19. A process according to any one of claims 1 to 10, characterized in that, The processing method further includes a step of exposing the substrate to an oxygen-containing substance before the step of (a).
20. 20. A process according to any one of claims 1 to 10, characterized in that, Alternately performing (a) and (b) a predetermined number of times.

Description

Processing method, semiconductor device manufacturing method, processing device, and program Technical Field The present disclosure relates to a processing method, a method of manufacturing a semiconductor device, a processing device, and a program. Background As a step of manufacturing a semiconductor device, a process of removing a material exposed on a surface of a substrate by etching may be performed (for example, refer to japanese patent application laid-open nos. 2021-082774 and 2022-018973). Disclosure of Invention Problems to be solved by the invention The present disclosure provides a technique capable of performing selective etching with high accuracy. Means for solving the problems According to one embodiment of the present invention, there is provided a technique including the steps of (a) exposing a substrate having a first material and a second material containing the same element as the first material on a surface thereof to a modifying agent to modify the surface of the first material so that at least a part X of a molecular structure of a molecule constituting the modifying agent is adsorbed on the surface of the first material to form a first inhibitor layer, and (b) exposing the substrate modified on the surface of the first material to an etchant to etch the second material. Effects of the invention According to the present disclosure, selective etching can be performed with high accuracy. Drawings Fig. 1 is a schematic configuration view of a vertical processing furnace of a processing apparatus preferably used in one embodiment of the present disclosure, and is a view showing a portion of a processing furnace 202 in a vertical cross-sectional view. Fig. 2 is a schematic configuration view of a vertical processing furnace of a processing apparatus preferably used in one embodiment of the present disclosure, and is a view showing a portion of the processing furnace 202 in a sectional view taken along line A-A in fig. 1. Fig. 3 is a schematic configuration diagram of a controller 121 of a processing apparatus preferably used in one embodiment of the present disclosure, and is a diagram showing a control system of the controller 121 in a block diagram. Fig. 4 (a) is a partial cross-sectional enlarged view showing a surface portion of a substrate in one embodiment of the present disclosure having a first material and a second material on a surface. Fig. 4 (b) is an enlarged partial cross-sectional view showing a surface portion of the substrate in one embodiment of the present disclosure after exposure to the modifying agent from the state of fig. 4 (a). Fig. 4 (c) is an enlarged partial cross-sectional view showing a surface portion of the substrate in one embodiment of the present disclosure after the second material is removed by exposure to the etchant from the state of fig. 4 (b). Fig. 4 (d) is an enlarged partial cross-sectional view showing a surface portion of the substrate in one embodiment of the present invention after exposure to the remover from the state of fig. 4 (c). Detailed Description < One embodiment of the present disclosure > Hereinafter, one embodiment of the present disclosure will be described mainly with reference to fig. 1 to 3 and fig. 4 (a) to 4 (d). The drawings used in the following description are schematic, and the relationship between the dimensions of the elements and the ratios of the elements shown in the drawings do not necessarily coincide with the actual situation. In addition, the dimensional relationship of the elements, the ratio of the elements, and the like do not necessarily coincide with each other among the plurality of drawings. (1) Structure of processing device As shown in fig. 1, the processing furnace 202 of the processing apparatus has a heater 207 as a temperature regulator (heating section). The heater 207 is cylindrical and is vertically mounted by being supported by a holding plate. The heater 207 also functions as an activation mechanism (excitation unit) for activating (exciting) the gas by heat. Inside the heater 207, the reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO 2) or silicon carbide (SiC), and is formed in a cylindrical shape with a closed upper end and an open lower end. A manifold 209 is disposed concentrically with the reaction tube 203 below the reaction tube 203. The manifold 209 is made of a metal material such as stainless steel (SUS), for example, and is formed in a cylindrical shape with upper and lower ends open. The upper end of the manifold 209 engages with the lower end of the reaction tube 203 to support the reaction tube 203. An O-ring 220a as a sealing member is provided between the manifold 209 and the reaction tube 203. The reaction tube 203 is installed vertically as in the heater 207. The reaction tube 203 and the manifold 209 mainly constitute a processing vessel (reaction vessel). A processing chamber 201