CN-122029987-A - Substrate processing apparatus, substrate processing method, and substrate processing program

CN122029987ACN 122029987 ACN122029987 ACN 122029987ACN-122029987-A

Abstract

A substrate processing apparatus for processing a film by supplying a processing liquid to a substrate on which the film is formed includes a rotation driving unit for holding a substrate W and rotating the substrate, a discharge unit for discharging the processing liquid, a processing liquid supply unit for supplying the processing liquid to the discharge unit, a discharge driving unit for moving the discharge unit to a plurality of positions on the substrate held by the rotation driving unit, which are different in a radial direction of the substrate, and a control unit for controlling the processing liquid supply unit and the discharge driving unit in accordance with processing conditions, wherein the processing conditions include a movement condition for defining a movement speed of the discharge unit for each of the plurality of positions, and a flow rate condition for defining a flow rate of the processing liquid supplied to the discharge unit for each of the plurality of positions.

Inventors

TODO TORU
KATO TAKUJI
Aoki Luta
Kikuchi Junxi
Yamanouchi Yuta
KOTANI KAITO
Chi Shangyu

Assignees

株式会社斯库林集团

Dates

Publication Date: 20260512
Application Date: 20241010
Priority Date: 20231012

Claims (20)

1. A substrate processing apparatus for processing a film by supplying a processing liquid to a substrate on which the film is formed, the substrate processing apparatus comprising: a rotation driving unit that holds the substrate and rotates the substrate; An ejection unit that ejects a processing liquid; A treatment liquid supply unit that supplies a treatment liquid to the ejection unit; A discharge driving unit for moving the discharge unit to a plurality of positions different in a radial direction of the substrate on the substrate held by the rotation driving unit, and A control unit for controlling the treatment liquid supply unit and the discharge drive unit in accordance with treatment conditions; the above-mentioned treatment conditions include: a movement condition defining a movement speed of the ejection portion for each of the plurality of positions, and And a flow rate condition defining a flow rate of the processing liquid supplied to the discharge unit for each of the plurality of positions.
2. The substrate processing apparatus according to claim 1, wherein the flow rate condition is set such that a flow rate of the processing liquid in a peripheral region located within a predetermined distance from the peripheral edge of the substrate is set to be smaller than a flow rate of the processing liquid in a region other than the peripheral region located at the position of the ejection portion.
3. The substrate processing apparatus according to claim 1, wherein the processing conditions further include a rotation condition for defining a rotation speed for rotating the substrate for each of the plurality of positions.
4. The substrate processing apparatus according to any one of claims 1 to 3, wherein the processing conditions further include a temperature condition related to a temperature of the processing liquid ejected from the ejection section toward the substrate for each of the plurality of positions; The control unit controls the processing liquid supply unit to adjust the temperature of the processing liquid discharged from the discharge unit to the substrate.
5. The substrate processing apparatus according to claim 4, wherein the processing liquid supply section includes a supply pipe for supplying the processing liquid to the discharge section, and a heating section provided in the supply pipe for heating the processing liquid.
6. The substrate processing apparatus according to any one of claims 1 to 3, wherein the processing conditions further include a mixing ratio condition relating to a mixing ratio of the processing liquid ejected from the ejection section to the substrate for each of the plurality of positions; the control unit controls the processing liquid supply unit to adjust a mixing ratio of the processing liquid discharged from the discharge unit to the substrate.
7. The substrate processing apparatus according to claim 6, wherein the processing liquid supply section includes a1 st processing liquid supply section for supplying the 1 st processing liquid to the discharge section; A2 nd treatment liquid supply unit for supplying the 2 nd treatment liquid to the discharge unit; a1 st process liquid flow rate adjusting unit for adjusting the flow rate of the 1 st process liquid; A 2 nd treatment liquid flow rate adjusting unit for adjusting the flow rate of the 2 nd treatment liquid, and And a mixing unit for mixing the 1 st treatment liquid with the 2 nd treatment liquid.
8. The substrate processing apparatus according to claim 7, wherein the 1 st processing liquid and the 2 nd processing liquid are the same liquid having different temperatures.
9. The substrate processing apparatus according to claim 7, wherein the 1 st processing liquid is a liquid different from the 2 nd processing liquid.
10. The substrate processing apparatus according to any one of claims 1 to 9, further comprising a processing condition acquisition unit configured to acquire the processing condition determined by using an inference model for estimating the processing condition, and The inference model is generated by machine learning data in which the processing conditions for processing the film by the substrate processing apparatus are set as target variables and the 1 st throughput indicating the difference in film thickness between before and after processing the film formed on the substrate to be processed by the substrate processing apparatus is set as explanatory variables.
11. The substrate processing apparatus according to claim 10, further comprising a throughput determining section for determining a throughput 2 for processing the coating film based on a film thickness of the coating film formed on the substrate before the coating film is processed, and The processing condition obtaining unit obtains the processing condition estimated by the inference model by adding the 2 nd processing amount to the inference model.
12. A substrate processing apparatus is provided with: A rotation driving unit that holds a substrate and rotates the substrate; An ejection unit that ejects a processing liquid; a treatment liquid supply unit for supplying the treatment liquid to the discharge unit, and A discharge driving unit that moves the discharge unit to a plurality of positions different in a radial direction of the substrate on the substrate held by the rotation driving unit; The processing liquid supply unit is configured to cause a flow rate of the processing liquid when the discharge unit is located in a peripheral region within a predetermined distance from the peripheral edge of the substrate to be smaller than a flow rate of the processing liquid when the discharge unit is located in a region other than the peripheral region.
13. The substrate processing apparatus according to claim 12, wherein a movement range of the ejection driving section for moving the ejection section is defined in accordance with a flow rate of the processing liquid supplied from the processing liquid supply section.
14. The substrate processing apparatus according to claim 12 or 13, wherein the ejection driving section sets the movement speed of the ejection section to zero at a predetermined time at any one of the plurality of positions.
15. The substrate processing apparatus according to any one of claims 12 to 14, wherein the ejection driving section reverses a direction of movement of the ejection section at least 1 time.
16. The substrate processing apparatus according to any one of claims 12 to 15, wherein the rotation driving unit rotates the substrate at different rotation speeds for each of the plurality of positions.
17. The substrate processing apparatus according to any one of claims 12 to 16, wherein the rotation driving unit makes a rotation speed of the substrate slower when the ejection unit is located in a peripheral region than when the ejection unit is located in a region other than the peripheral region.
18. A substrate processing method is performed by a substrate processing apparatus for processing a film by supplying a processing liquid to a substrate on which the film is formed, The substrate processing apparatus includes: a rotation driving part for holding the substrate and rotating the substrate, and An ejection unit that ejects a processing liquid; The substrate processing method includes: a treatment liquid supply step of supplying the treatment liquid to the ejection portion in accordance with a movement condition defining a movement speed of the ejection portion for each of the plurality of positions, and And a discharge driving step of moving the discharge section to a plurality of positions different in the radial direction of the substrate on the substrate held by the rotation driving section in accordance with a flow rate condition for defining a flow rate of the processing liquid supplied to the discharge section for each of the plurality of positions.
19. A substrate processing method is performed by a substrate processing apparatus for processing a film by supplying a processing liquid to a substrate on which the film is formed, The substrate processing apparatus includes a rotation driving unit that holds the substrate and rotates the substrate, and An ejection unit that ejects a processing liquid; the substrate processing method includes: A treatment liquid supply step of supplying the treatment liquid to the ejection section, and A discharge driving step of moving the discharge unit to a plurality of positions different in a radial direction of the substrate on the substrate held by the rotation driving unit; the process liquid supply step includes making a flow rate of the process liquid when the discharge portion is located in a peripheral region within a predetermined distance from the peripheral edge of the substrate smaller than a flow rate of the process liquid when the discharge portion is located in a region other than the peripheral region.
20. A substrate processing program executed by a computer controlling a substrate processing apparatus for processing a film by supplying a processing liquid to a substrate on which the film is formed, The substrate processing apparatus includes: a rotation driving part for holding the substrate and rotating the substrate, and An ejection unit that ejects a processing liquid; the substrate processing program causes the computer to execute: a treatment liquid supply step of supplying the treatment liquid to the ejection portion in accordance with a movement condition defining a movement speed of the ejection portion for each of the plurality of positions, and And a discharge driving step of moving the discharge section to a plurality of positions different in the radial direction of the substrate on the substrate held by the rotation driving section in accordance with a flow rate condition for defining a flow rate of the processing liquid supplied to the discharge section for each of the plurality of positions.

Description

Substrate processing apparatus, substrate processing method, and substrate processing program Technical Field The present invention relates to a substrate processing apparatus, a substrate processing method for executing the substrate processing apparatus, and a substrate processing program for executing the substrate processing method by a computer. Background There is known a technique for uniformizing the film thickness of a film after a treatment in an etching treatment for treating the film formed on a substrate. For example, patent document 1 describes a substrate processing apparatus including a rotation holding unit that holds and rotates a substrate, a processing liquid supply unit that includes a nozzle that ejects processing liquid onto a surface of the substrate, a nozzle driving unit that moves the nozzle in a direction intersecting a rotation center of the substrate, and a control unit that controls the nozzle driving unit so as to repeatedly perform movement of an arrival position of the processing liquid from a rotation center side of the substrate to an outer periphery side of the substrate in accordance with a first velocity distribution that varies in accordance with a distance from the rotation center of the substrate, and movement of the arrival position of the processing liquid from an outer surface Zhou Ceyi of the substrate to the rotation center side of the substrate in accordance with a second velocity distribution that differs from the first velocity distribution. Patent document 1 Japanese patent application laid-open No. 2019-54104 Disclosure of Invention [ Problem to be solved by the invention ] According to patent document 1, the flow rate of the treatment liquid discharged from the nozzle is constant. Therefore, the processing liquid supplied to the peripheral portion of the substrate may be scattered to the outside of the substrate, and the processing liquid may be wastefully consumed. In recent years, from the viewpoint of environmental protection, it is desired to reduce the consumption of the processing liquid supplied to the substrate. The invention provides a substrate processing apparatus capable of reducing consumption of processing liquid. [ Means of solving the problems ] A substrate processing apparatus according to an aspect of the present invention processes a film by supplying a processing liquid to a substrate on which the film is formed, and includes a rotation driving unit that holds the substrate and rotates the substrate, an ejection unit that ejects the processing liquid, a processing liquid supply unit that supplies the processing liquid to the ejection unit, an ejection driving unit that moves the ejection unit to a plurality of positions on the substrate held by the rotation driving unit that are different in a radial direction of the substrate, and a control unit that controls the processing liquid supply unit and the ejection driving unit in accordance with processing conditions, wherein the processing conditions include a movement condition that specifies a movement speed of the ejection unit for each of the plurality of positions, and a flow rate condition that specifies a flow rate of the processing liquid supplied to the ejection unit for each of the plurality of positions. A substrate processing apparatus according to another aspect of the present invention includes a rotation driving unit that holds a substrate and rotates the substrate, a discharge unit that discharges a processing liquid, a processing liquid supply unit that supplies the processing liquid to the discharge unit, and a discharge driving unit that moves the discharge unit to a plurality of positions different in a radial direction of the substrate on the substrate held by the rotation driving unit, wherein the processing liquid supply unit causes a flow rate of the processing liquid when the discharge unit is located in a peripheral region within a predetermined distance from a peripheral edge of the substrate to be smaller than a flow rate of the processing liquid when the discharge unit is located in a region other than the peripheral region. A substrate processing method according to another aspect of the present invention is performed by a substrate processing apparatus for processing a film by supplying a processing liquid to a substrate on which the film is formed, the substrate processing apparatus including a rotation driving unit for holding the substrate and rotating the substrate, and a discharge unit for discharging the processing liquid, the substrate processing method including a processing liquid supply step for supplying the processing liquid to the discharge unit in accordance with a movement condition for defining a movement speed of the discharge unit for each of a plurality of positions, and a discharge driving step for moving the discharge unit to a plurality of positions different in a radial direction of the substrate on the substrate held by the rotation d