CN-122029989-A - Additive for CMP polishing and composition for CMP polishing containing the same

CN122029989ACN 122029989 ACN122029989 ACN 122029989ACN-122029989-A

Abstract

The present invention provides a technique for suppressing aggregation of abrasive grains and increasing the polishing rate without using particles such as surface-modified metal oxide as abrasive grains by a CMP polishing additive comprising a polycarboxylic acid copolymer having a weight average molecular weight of 14000 or less and containing, as a constituent monomer, (a) 5 to 95 mol% of a compound represented by the following formula (1), (R 1 O（AO）nR 2 .) (1) (in formula (1), R 1 represents a hydrocarbon group having 1 to 18 carbon atoms, R 2 represents an unsaturated hydrocarbon group having 2 to 5 carbon atoms, AO represents 1 or more than 2 kinds of oxyalkylene groups having 2 to 4 carbon atoms, n represents an average addition mole number of oxyalkylene groups and is a number of 1 to 100), (b) 0 to 95 mol% of a maleic acid compound, (c) 0 to 60 mol% of a compound copolymerizable with the above compound (a) and the above compound (b), wherein the total of the above compounds (b) and (c) is 95 to 60 mol%.

Inventors

SUGIURA Midori
TAKUYA HONDA
YOSHIKAWA FUMITAKA

Assignees

日油株式会社

Dates

Publication Date: 20260512
Application Date: 20241028
Priority Date: 20231031

Claims (2)

1. An additive for CMP polishing, comprising a polycarboxylic acid copolymer having the following constituent monomers and a weight average molecular weight of 14000 or less: (a) 5 to 95 mol% of a compound represented by the following formula (1), R 1 O（AO）nR 2 ...(1) In the formula (1), R 1 represents a hydrocarbon group having 1 to 18 carbon atoms, R 2 represents an unsaturated hydrocarbon group having 2 to 5 carbon atoms, AO represents 1 or more than 2 kinds of oxyalkylene groups having 2 to 4 carbon atoms, n represents an average molar number of addition of the oxyalkylene groups and is a number of 1 to 100, (B) 0 to 95 mol% of a maleic acid compound, (C) And 0 to 60 mol% of a compound copolymerizable with the compound (a) and the compound (b), wherein the total of the compound (b) and the compound (c) is 5 to 95 mol%.
2. A composition for CMP polishing comprising the additive for CMP polishing according to claim 1 and abrasive grains, The composition for CMP polishing contains 0.1-10wt% of abrasive particles, The CMP polishing additive is contained in an amount of 0.1 to 60 parts by mass per 100 parts by mass of the abrasive grains.

Description

Additive for CMP polishing and composition for CMP polishing containing the same Technical Field The present invention relates to an additive for CMP polishing and a composition for CMP polishing containing the same. In the present invention, "CMP" means chemical mechanical polishing (CHEMICAL MECHANICAL polishing). Background In the development of semiconductor devices typified by semiconductor integrated circuits, in order to achieve miniaturization and high speed, in recent years, higher density and higher integration due to miniaturization and lamination of wiring have been demanded. As a technique for achieving this, various techniques such as CMP have been used. This CMP is a technique necessary for flattening the surface of a film to be processed such as an interlayer insulating film, forming plugs (plugs), forming embedded metal wiring, and the like, and is used for smoothing a substrate. In CMP, an alumina-based abrasive, a ceria (IV) oxide-based abrasive, a silica-based abrasive, or the like is generally used. If these abrasive grains agglomerate to generate coarse particles, defects may be caused in the polished surface. Therefore, agglomeration of abrasive grains is generally prevented by adding a dispersant, and defects of the abrasive surface are suppressed. On the other hand, in recent years, the abrasive grains themselves have been micronized in order to further reduce defects on the polishing surface. Even if a dispersant is used, the polishing rate may be lowered and the production efficiency may be lowered by the atomization. In order to further increase the polishing rate as compared with the conventional polishing rate, patent document 1 proposes a CMP polishing slurry comprising abrasive grains and a liquid medium, the abrasive grains containing metal oxide particles or metal hydroxide particles surface-modified with an epoxy compound. Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2019-196467 Disclosure of Invention According to the invention described in patent document 1, the polishing rate can be increased, it is necessary to use particles such as metal oxides, the surfaces of which have been modified with epoxy compounds in advance, and it is necessary to clean and remove unreacted epoxy compounds after the surface modification of the abrasive particles, so that there is room for improvement in terms of the number of steps. Accordingly, an object of the present invention is to provide a technique capable of suppressing aggregation of abrasive grains and improving polishing rate without using surface-modified metal oxide or other particles as abrasive grains. The present inventors have made intensive studies in view of the above problems, and as a result, have found that the above problems can be solved by adding a specific polycarboxylic acid copolymer only when polishing is performed using general abrasive grains and a dispersant. The gist of the present invention relates to the following [1], [2]. [1] An additive for CMP polishing, comprising a polycarboxylic acid copolymer having the following constituent monomers and a weight average molecular weight of 14000 or less: (a) 5 to 95 mol% of a compound represented by the following formula (1), R1O（AO）nR2 ...(1) (In the formula (1), R 1 represents a hydrocarbon group having 1 to 18 carbon atoms, R 2 represents an unsaturated hydrocarbon group having 2 to 5 carbon atoms, AO represents 1 or more than 2 kinds of oxyalkylene groups having 2 to 4 carbon atoms, n represents an average molar number of addition of the oxyalkylene groups and is a number of 1 to 100), (B) 0 to 95 mol% of a maleic acid compound, (C) 0 to 60 mol% of a compound copolymerizable with the compound (a) and the compound (b) (wherein the total of the compound (b) and the compound (c) is 5 to 95 mol%). [2] A composition for CMP polishing comprising the additive for CMP polishing of the item [1] above and abrasive grains, The CMP polishing composition contains 0.1 to 10wt% of abrasive grains, The CMP polishing additive is contained in an amount of 0.1 to 60 parts by mass per 100 parts by mass of the abrasive grains. According to the present invention, it is possible to provide a technique capable of suppressing aggregation of abrasive grains and improving the polishing rate without using surface-modified metal oxide or other particles as abrasive grains. Detailed Description In the present specification, the numerical range specified by the symbol "-" includes numerical values at both ends (upper limit and lower limit) of "-". For example, "2 to 4" means 2 to 4. Further, in the case of determining the concentration or amount, the concentration or amount of any higher side may be correlated with the concentration or amount of any lower side. For example, the descriptions of "2 to 10% by mass" and "preferably 4 to 8% by mass" also include the descriptions of "2 to 4% by mass", "2 to 8% by mass", "4 to 10% by mass" and "