CN-122029990-A - Substrate processing method

CN122029990ACN 122029990 ACN122029990 ACN 122029990ACN-122029990-A

Abstract

The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for growing a thin film on a substrate. The substrate processing method according to an exemplary embodiment includes a preparation step of preparing a substrate in a reaction space, a cleaning step of exposing the substrate to a first plasma, a thin film forming step of forming a thin film on the substrate, and an etching step of exposing the substrate with the thin film formed thereon to a second plasma.

Inventors

Cai Yuanxu
Quan Fugeng
CUI XINGHE
Quan Shixi
HUANG ZHEZHOU

Assignees

周星工程股份有限公司

Dates

Publication Date: 20260512
Application Date: 20241011
Priority Date: 20231013

Claims (12)

1. A substrate processing method, comprising: A preparation step of preparing a substrate in a reaction space; a cleaning step of exposing the substrate to a first plasma; a thin film forming step of forming a thin film on the substrate, and And an etching step of exposing the substrate on which the thin film is formed to a second plasma.
2. The substrate processing method according to claim 1, wherein the second plasma is formed by a gas containing one or more of a chlorine-containing gas, a hydrogen-containing gas, a helium-containing gas, and an argon-containing gas.
3. The substrate processing method of claim 1, wherein the first plasma is formed by a gas containing one or more of a fluorine-containing gas, a hydrogen-containing gas, a helium-containing gas, and an argon-containing gas.
4. The substrate processing method of claim 1, wherein a process cycle including the cleaning step, the thin film forming step, and the etching step is repeated a plurality of times.
5. The substrate processing method according to claim 3, wherein the first plasma is formed by a gas containing one or more of a fluorine-containing gas, a hydrogen-containing gas, a helium-containing gas, and an argon-containing gas, and then the first plasma is formed by a chlorine-containing gas.
6. The substrate processing method of claim 1, wherein the substrate comprises a first region and a second region, Wherein, in the film forming step, a film thinner than the film formed on the first region is formed on the second region, and In the etching step, the thin film formed on the first region and the second region is removed to expose the second region.
7. The substrate processing method of claim 6, wherein the first region comprises a region on the substrate where silicon is exposed, and The second region includes a region on the substrate where at least one of silicon oxide and silicon nitride is exposed.
8. The substrate processing method according to claim 1, wherein in the thin film forming step, a silicon or silicon germanium thin film is formed on the substrate.
9. The substrate processing method of claim 1, wherein the etching step comprises: A step of supplying chlorine gas to the reaction space; a step of supplying argon gas to the reaction space, and And forming plasmas of chlorine and argon.
10. The substrate processing method of claim 9, wherein the etching step further comprises the step of supplying hydrogen gas to the reaction space, Wherein in the step of forming plasma, plasma of chlorine, argon and hydrogen is formed.
11. The substrate processing method of claim 1, wherein the first plasma and the second plasma each comprise an inductively coupled plasma.
12. The substrate processing method of claim 1, wherein, after the etching step, a blowing step is further performed to form a third plasma in the reaction space, Wherein the third plasma is formed by a hydrogen-containing gas.

Description

Substrate processing method Technical Field The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for growing a thin film on a substrate. Background Semiconductor elements are used in various electronic industries due to their characteristics such as miniaturization, versatility, and low manufacturing cost. Such semiconductor elements may include memory elements that store data, logic elements that perform arithmetic processing on the data, and hybrid elements that perform various functions simultaneously. With the development of the electronics industry, the demand for high integration of semiconductor elements is increasing dramatically. Accordingly, various limitations such as reduction in process margin (process margin) of an exposure step defining a fine pattern occur, and thus it is increasingly difficult to implement a high-integration semiconductor element. In addition, with the development of the electronics industry, the demand for high-speed semiconductor devices is also increasing. In order to meet the demand for high integration and/or high speed of semiconductor elements, various researches are being conducted. [ Related art literature ] (Patent document 1) korean laid-open publication No. 10-2008-012932 Disclosure of Invention Technical problem The present disclosure provides a substrate processing method for selectively growing a thin film on a substrate. Technical proposal According to an exemplary embodiment, a substrate processing method includes a preparation step of preparing a substrate in a reaction space, a cleaning step of exposing the substrate to a first plasma, a thin film forming step of forming a thin film on the substrate, and an etching step of exposing the substrate with the thin film formed thereon to a second plasma. The second plasma may be formed by a gas containing one or more of a chlorine-containing gas, a hydrogen-containing gas, a helium-containing gas, and an argon-containing gas. The first plasma may be formed by a gas containing one or more of a fluorine-containing gas, a hydrogen-containing gas, a helium-containing gas, and an argon-containing gas. The process cycle including the cleaning step, the thin film forming step, and the etching step may be repeated a plurality of times. The first plasma may be formed by a gas containing one or more of a fluorine-containing gas, a hydrogen-containing gas, a helium-containing gas, and an argon-containing gas, and then formed by a chlorine-containing gas. The substrate may include a first region and a second region, wherein in the thin film forming step, a thin film thinner than the thin film formed on the first region may be formed on the second region, and in the etching step, the thin film formed on the first region and the second region may be removed to expose the second region. The first region may include a region on the substrate where silicon is exposed, and the second region may include a region on the substrate where at least one of silicon oxide and silicon nitride is exposed. In the thin film forming step, a silicon or silicon germanium thin film may be formed on the substrate. The etching step may include a step of supplying chlorine gas to the reaction space, a step of supplying argon gas to the reaction space, and a step of forming plasmas of chlorine gas and argon gas. The etching step may further include a step of supplying hydrogen gas to the reaction space, wherein in the step of forming plasma, plasma of chlorine gas, argon gas, and hydrogen gas may be formed. The first plasma and the second plasma may each comprise an inductively coupled plasma. After the etching step, a purging step may be further performed to form a third plasma in the reaction space, wherein the third plasma may be formed by a hydrogen-containing gas. Advantageous effects According to an exemplary embodiment, a cleaning step using a first plasma may be performed before forming a thin film on a substrate, and an etching step using a second plasma may be performed after forming a thin film on a substrate to form a high quality thin film on a substrate. In addition, a natural oxide film formed on the substrate before forming the thin film or impurities remaining on the substrate may be effectively removed using plasma formed with a gas containing one or more of a fluorine-containing gas, a hydrogen-containing gas, a helium-containing gas, and an argon-containing gas. In addition, the thin film deposited on the unwanted region after the thin film is formed may be removed using plasma formed with a gas containing one or more of a chlorine-containing gas, a hydrogen-containing gas, a helium-containing gas, and an argon-containing gas to selectively grow the thin film on the substrate with high efficiency. Drawings Fig. 1 is a schematic view of a substrate processing apparatus according to an exemplary embodiment. Fig. 2 is a schematic diagram of a substrate processing me