CN-122029991-A - Substrate processing apparatus, gas supply suppressing structure, substrate processing method, and method for manufacturing semiconductor device

Abstract

The substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support portion provided in the processing chamber and configured to support a first substrate or a second substrate having an outer diameter smaller than that of the first substrate, a gas supply portion provided at a position facing the substrate support portion and having a ring-shaped first region having an inner diameter larger than that of the second substrate, and a second region provided on an inner peripheral side of the first region, the gas being supplied from the first region and the second region into the processing chamber, and a suppressing portion configured to suppress supply of gas from the first region into the processing chamber when the second substrate is processed.

Inventors

• KAZUHIRO MORIMITSU
• OHASHI NAOFUMI

Assignees

• 株式会社国际电气

Dates

Publication Date

20260512

Application Date

20240327

Claims (20)

1. 1. A substrate processing apparatus, comprising: a processing chamber for processing a substrate; a substrate support section provided in the processing chamber and configured to support a first substrate or a second substrate having an outer diameter smaller than that of the first substrate; a gas supply unit provided at a position facing the substrate support unit and having a ring-shaped first region having an inner diameter larger than an outer diameter of the second substrate, and a second region provided on an inner peripheral side of the first region, the gas supply unit being configured to supply gas from the first region and the second region into the processing chamber, and And a suppressing unit configured to suppress supply of gas from the first region into the processing chamber when the second substrate is processed.
2. 2. The substrate processing apparatus according to claim 1, wherein, The first region is a region which faces the surface of the first substrate in a state where the first substrate is supported by the substrate support portion, and which does not face the surface of the second substrate in a state where the second substrate is supported by the substrate support portion, The second region is a region that faces the surface of the first substrate in a state where the first substrate is supported by the substrate support portion, and faces the surface of the second substrate in a state where the second substrate is supported by the substrate support portion.
3. 3. The substrate processing apparatus according to claim 1 or 2, wherein, The gas supply part has a dispersion plate having a plurality of passage parts through which the gas can pass and facing the substrate support part, The first region is formed by a portion of the dispersion plate on the edge side, The second region is formed by a portion of the dispersion plate on the inner peripheral side of the edge portion side.
4. 4. The substrate processing apparatus according to claim 1, wherein, The suppressing portion is provided at a position facing the substrate supporting portion, and includes a first portion for suppressing supply of the gas from the first region into the processing chamber, and a second portion serving as a hole through which the gas passes, The second portion has a diameter larger than an outer diameter of the second substrate and smaller than an outer diameter of the first substrate.
5. 5. The substrate processing apparatus according to claim 4, wherein, The first region is a region which faces an edge portion of the first substrate in a state where the first substrate is supported by the substrate support portion and which does not face the second substrate in a state where the second substrate is supported by the substrate support portion, The second region is a region facing the center portion of the first substrate in a state where the first substrate is supported by the substrate support portion, facing the second substrate in a state where the second substrate is supported by the substrate support portion, The first portion is disposed at least below the first region when the second substrate is processed.
6. 6. The substrate processing apparatus according to claim 4, wherein, The gas supply part has a dispersion plate having a plurality of passage parts through which the gas can pass and facing the substrate support part, The first region is formed by a portion of the dispersion plate on the edge side, The second region is formed by a portion on the inner peripheral side of the edge portion side, The first portion is disposed at least below the first region when the second substrate is processed.
7. 7. The substrate processing apparatus according to claim 1, wherein, The suppressing portion is provided at a position facing the substrate supporting portion, and includes a first portion for suppressing supply of the gas from the first region into the processing chamber, and a second portion serving as a hole through which the gas passes, The shape of the second portion is the same as the shape of the second substrate.
8. 8. The substrate processing apparatus according to claim 1, wherein, The suppressing portion is provided at a position facing the substrate supporting portion, and includes a first portion for suppressing supply of the gas from the first region into the processing chamber, and a second portion serving as a hole through which the gas passes, The first portion is disposed above a surface of the substrate support portion that does not support the second substrate in a state where the second substrate is supported by the substrate support portion.
9. 9. The substrate processing apparatus according to claim 1, wherein, An electric power supply system is connected to the gas supply unit, An electrode is provided on the substrate support portion, The suppressing portion is disposed between the electrode and the gas supply portion when the second substrate is processed.
10. 10. The substrate processing apparatus according to claim 9, wherein, The suppressing portion is disposed between a portion of the electrode facing the first region and the first region.
11. 11. The substrate processing apparatus according to claim 9, wherein, The suppressing portion has insulation.
12. 12. The substrate processing apparatus according to claim 1, wherein, Further comprises a position control unit capable of controlling the positional relationship between the gas supply unit and the suppressing unit, The position control unit is configured to: When the first substrate is processed, the distance between the suppressing part and the gas supplying part is controlled to be a first distance, When the second substrate is processed, the distance between the suppressing portion and the gas supplying portion is controlled to be closer than the first distance.
13. 13. The substrate processing apparatus according to claim 12, wherein, Also has a supporting pin capable of supporting the suppressing part, The position control unit controls a distance between the suppressing unit and the gas supply unit via the support pin.
14. 14. The substrate processing apparatus according to claim 13, wherein, The suppressing portion is provided at a position facing the substrate supporting portion, and includes a first portion for suppressing supply of the gas from the first region into the processing chamber, and a second portion serving as a hole through which the gas passes, The first portion is provided with a recess engageable with the support pin.
15. 15. The substrate processing apparatus according to claim 1, wherein, The substrate supporting part is provided with a countersink part capable of accommodating the restraining part, The suppressing portion is accommodated in the spot facing portion when the first substrate is processed.
16. 16. The substrate processing apparatus according to claim 1, wherein, A storage part capable of storing the inhibition part is arranged outside the processing chamber, The suppressing portion is stored by the storing portion when the first substrate is processed, The suppressing portion moves from the storing portion to the supporting pin when the second substrate is processed.
17. 17. The substrate processing apparatus according to claim 1, wherein, The substrate support portion is provided with a first annular cover, which is provided with the first substrate on an inner peripheral side in a state where the first substrate is supported, or a second annular cover, which is provided with the second substrate on an inner peripheral side in a state where the second substrate is supported, and has an inner diameter smaller than an inner diameter of the first annular cover.
18. 18. A gas supply suppressing structure for a substrate processing apparatus, the gas supply suppressing structure characterized in that, The substrate processing apparatus includes: a processing chamber for processing a substrate; a substrate support part provided in the processing chamber and capable of supporting a first substrate or a second substrate having an outer diameter smaller than that of the first substrate, and A gas supply unit provided at a position facing the substrate support unit, the gas supply unit having a ring-shaped first region having an inner diameter larger than an outer diameter of the second substrate, and a second region provided on an inner peripheral side of the first region, the gas supply unit being configured to supply gas from the first region and the second region into the processing chamber, The gas supply suppressing structure is configured to suppress supply of gas from the first region into the processing chamber when the second substrate is processed.
19. 19. A substrate processing method, characterized in that, The method comprises the following steps: A step of supporting a second substrate on a substrate support portion provided in a processing chamber for processing a substrate and capable of supporting a first substrate or the second substrate having a smaller outer diameter than the first substrate, and In the gas supply unit, the gas supply unit may have a ring-shaped first region having an inner diameter larger than an outer diameter of the second substrate, and a second region provided on an inner peripheral side of the first region, and may be configured to supply the gas from the first region and the second region into the processing chamber, by supplying the gas into the processing chamber while the gas supply unit is configured to suppress the supply of the gas from the first region into the processing chamber.
20. 20. A method for manufacturing a semiconductor device, characterized in that, A substrate processing method comprising the method of claim 19.

Description

Substrate processing apparatus, gas supply suppressing structure, substrate processing method, and method for manufacturing semiconductor device Technical Field The present disclosure relates to a substrate processing apparatus, a gas supply suppressing structure, a substrate processing method, and a method of manufacturing a semiconductor device. Background A technique is known in which a process gas is supplied to a substrate as a step of a manufacturing process of a semiconductor device, and a film is formed on the substrate (for example, see patent documents 1 and 2). Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2018-133477 Patent document 2 Japanese patent application laid-open No. 2018-93045 Disclosure of Invention Problems to be solved by the invention The present disclosure provides a technique capable of stably processing a substrate regardless of the size of the substrate. Means for solving the problems According to an aspect of the present disclosure, there is provided a technique having: a processing chamber for processing a substrate; a substrate support section provided in the processing chamber and configured to support a first substrate or a second substrate having an outer diameter smaller than that of the first substrate; a gas supply unit provided at a position facing the substrate support unit and having a ring-shaped first region having an inner diameter larger than an outer diameter of the second substrate, and a second region provided on an inner peripheral side of the first region, the gas supply unit being configured to supply gas from the first region and the second region into the processing chamber, and And a suppressing unit configured to suppress supply of gas from the first region into the processing chamber when the second substrate is processed. Effects of the invention According to the present disclosure, a substrate can be stably processed regardless of the size of the substrate. Drawings Fig. 1 is a schematic configuration diagram of a substrate processing apparatus according to an embodiment of the present disclosure, and shows a state in which a first substrate is provided. Fig. 2 is a schematic configuration diagram of a substrate processing apparatus according to an embodiment of the present disclosure, and shows a state in which a second substrate is provided. Fig. 3 is a diagram showing a gas supply system of the substrate processing apparatus according to the embodiment of the present disclosure. Fig. 4 is a plan view of the substrate processing apparatus of fig. 1, as viewed from the arrow 4X direction. Fig. 5 is a plan view of the substrate processing apparatus of fig. 2, as viewed from the arrow 5X direction. Fig. 6 is a block diagram illustrating a control system used in the substrate processing apparatus according to the embodiment of the present disclosure. Fig. 7 is a schematic configuration diagram of a substrate processing apparatus according to another embodiment of the present disclosure, showing a state in which a first substrate is provided. Fig. 8 is a schematic configuration diagram of a substrate processing apparatus according to another embodiment of the present disclosure, showing a state in which a second substrate is provided. Fig. 9 is a schematic configuration diagram of a storage unit of a suppressing member used in a substrate processing apparatus according to another embodiment of the present disclosure. Detailed Description < One embodiment of the present disclosure > In the following, an embodiment of the present disclosure will be described mainly with reference to fig. 1 to 6. The drawings used in the following description are schematic drawings, and the dimensional relationships of the elements, the ratios of the elements, and the like in the drawings do not necessarily coincide with actual objects. In addition, the dimensional relationships of the elements, the ratios of the elements, and the like do not necessarily match each other among the plurality of drawings. (1) Structure of substrate processing apparatus As shown in fig. 1, the substrate processing apparatus 200 is an apparatus capable of processing a substrate S. In the figure, arrow UP indicates the upper side of the substrate processing apparatus 200. The substrate processing apparatus 200 includes a processing container 202. The processing container 202 is configured as a closed container having a circular cross section and being flat, for example. The processing container 202 is made of a metal material such as aluminum (Al) or stainless steel (SUS). (Treatment Chamber) A processing chamber 205 for processing a substrate S such as a silicon wafer is formed in the processing container 202. The processing container 202 includes an upper processing container 202a and a lower processing container 202b. A substrate carry-in/out port 204 adjacent to the gate valve 203 is provided on a side surface of the lower process contai