CN-122029993-A - Substrate processing apparatus, substrate processing method, method for manufacturing semiconductor device, and program

Abstract

The invention comprises a processing chamber for processing a substrate, a substrate support part provided with a substrate support surface capable of supporting the substrate in the processing chamber, a first gas supply part capable of supplying processing gas to the processing chamber through a first gas supply hole, a second gas supply part capable of supplying non-processing gas to the side of the substrate support part through a second gas supply hole, a first wall arranged between the substrate support part and the second gas supply hole in the horizontal direction and provided with an upper end at a position higher than the upper end of the substrate support part, a first exhaust flow path arranged between the first wall and the substrate support part, and a second exhaust flow path arranged below the second gas supply hole.

Inventors

• ITATANI HIDEHARU
• OHASHI NAOFUMI

Assignees

• 株式会社国际电气

Dates

Publication Date

20260512

Application Date

20240326

Claims (20)

1. 1. A substrate processing apparatus, comprising: a processing chamber for processing a substrate; a substrate support section having a substrate support surface capable of supporting a substrate in the processing chamber; a first gas supply unit configured to supply a process gas to the process chamber through a first gas supply hole; a second gas supply unit configured to supply a non-process gas to a side of the substrate support unit through a second gas supply hole; a first wall provided between the substrate support portion and the second gas supply hole in a horizontal direction, and having an upper end provided at a position higher than an upper end of the substrate support portion; a first exhaust flow path provided between the first wall and the substrate support portion, and And a second exhaust flow path provided below the second gas supply hole.
2. 2. The substrate processing apparatus according to claim 1, wherein, A plurality of substrate support tables are provided as the substrate support sections, The first wall, the first exhaust passage, and the second exhaust passage are provided in combination with the substrate support table.
3. 3. The substrate processing apparatus according to claim 1 or 2, wherein, A second wall is also provided below the second gas supply hole and outside the first wall in the horizontal direction, the second wall constituting the second exhaust flow path between the second wall and the first wall.
4. 4. The substrate processing apparatus according to claim 3, wherein, The height of the upper end of the second wall is the same as or lower than the height of the upper end of the first wall.
5. 5. The substrate processing apparatus according to claim 3, wherein, The height of the upper end of the second wall is higher than the height of the upper end of the first wall.
6. 6. The substrate processing apparatus according to claim 1 or 2, wherein, The non-process gas is an inert gas.
7. 7. The substrate processing apparatus according to claim 1 or 2, wherein, The main component of the non-process gas is the same as the main component of the process gas.
8. 8. The substrate processing apparatus according to claim 1 or 2, wherein, The inner side surface of the second gas supply hole is provided on the second exhaust gas flow path.
9. 9. The substrate processing apparatus according to claim 1 or 2, wherein, The first gas supply hole is provided on the substrate support surface side of the second gas supply hole in the horizontal direction.
10. 10. The substrate processing apparatus according to claim 1 or 2, wherein, The apparatus includes a second process gas supply unit configured to supply a second process gas to the process chamber through the first gas supply hole.
11. 11. The substrate processing apparatus according to claim 2, wherein, A partition member is provided between the plurality of substrate support tables, and the partition member partitions the processing chamber up and down at the height of the substrate support tables.
12. 12. The substrate processing apparatus according to claim 1 or 2, wherein, The apparatus further includes a control unit configured to control the first gas supply unit and the second gas supply unit so as to start the supply of the non-process gas and then start the supply of the process gas.
13. 13. The substrate processing apparatus according to claim 1 or 2, wherein, Upstream of the second exhaust flow path and upstream of the first exhaust flow path, the flow rate of the non-process gas is higher than the flow rate of the process gas.
14. 14. The substrate processing apparatus according to claim 1 or 2, wherein, The second exhaust flow path has a width greater than a width of the first exhaust flow path.
15. 15. The substrate processing apparatus according to claim 1, wherein, A heater capable of heating the first exhaust flow path is provided.
16. 16. The substrate processing apparatus according to claim 1, wherein, The first exhaust gas flow path communicates with the second exhaust gas flow path, A heater capable of heating the second exhaust flow path is provided.
17. 17. The substrate processing apparatus according to claim 1, wherein, A third exhaust flow path is provided that communicates the first exhaust flow path with the second exhaust flow path, A heater capable of heating the third exhaust flow path is provided.
18. 18. A substrate processing method, comprising: a step of supporting a substrate on a substrate supporting surface of a substrate supporting portion provided in a processing chamber, and And a step of discharging the ambient gas of the process chamber in a horizontal direction between the substrate support section and the second gas supply hole while supplying the process gas to the substrate via the first gas supply hole and supplying the non-process gas to the side of the substrate support section via the second gas supply hole, wherein the first gas supply hole is provided between the substrate support section and a first wall, the upper end of the first wall is provided at a position higher than the upper end of the substrate support section, and the second gas supply hole is provided below the second gas supply hole.
19. 19. A method for manufacturing a semiconductor device, characterized in that, A substrate processing method comprising the method of claim 18.
20. 20. A program, characterized in that, The substrate processing apparatus is caused by a computer to execute the steps of: a step of supporting a substrate on a substrate supporting surface of a substrate supporting portion provided in a processing chamber, and And a step of discharging the ambient gas of the process chamber in a horizontal direction between the substrate support section and the second gas supply hole while supplying the process gas to the substrate via the first gas supply hole and supplying the non-process gas to the side of the substrate support section via the second gas supply hole, wherein the first gas supply hole is provided between the substrate support section and a first wall, the upper end of the first wall is provided at a position higher than the upper end of the substrate support section, and the second gas supply hole is provided below the second gas supply hole.

Description

Substrate processing apparatus, substrate processing method, method for manufacturing semiconductor device, and program Technical Field The invention relates to a substrate processing apparatus, a substrate processing method, a method of manufacturing a semiconductor device, and a program. Background In order to improve the productivity, there is a substrate processing apparatus of a type that processes a plurality of substrates together. For example, japanese patent application laid-open No. 2022-2263 discloses an apparatus for processing a substrate in a state in which a plurality of substrate mounting surfaces are disposed in a processing chamber and the substrate is mounted on each substrate mounting surface. Disclosure of Invention Problems to be solved by the invention However, in the above-described conventional example, the process gas for processing the substrate may be unevenly supplied into the substrate surface. The present disclosure aims to uniformize substrate processing. Means for solving the problems According to one aspect of the present disclosure, there is provided a technique having: a processing chamber for processing a substrate; a substrate support section having a substrate support surface capable of supporting a substrate in the processing chamber; a first gas supply unit configured to supply a process gas to the process chamber through a first gas supply hole; a second gas supply unit configured to supply a non-process gas to a side of the substrate support unit through a second gas supply hole; a first wall provided between the substrate support portion and the second gas supply hole in a horizontal direction, and having an upper end provided at a position higher than an upper end of the substrate support portion; a first exhaust flow path provided between the first wall and the substrate support portion, and And a second exhaust flow path provided below the second gas supply hole. ADVANTAGEOUS EFFECTS OF INVENTION According to the present disclosure, uniformity of substrate processing can be achieved. Drawings Fig. 1 is an explanatory view illustrating a substrate processing apparatus according to a first embodiment. Fig. 2 is an explanatory view illustrating a substrate processing apparatus according to the first embodiment. Fig. 3 is an explanatory view illustrating a substrate processing apparatus according to the first embodiment. Fig. 4 is an explanatory view illustrating a substrate processing apparatus according to the first embodiment. Fig. 5 is an explanatory view illustrating the first gas supply portion of the first embodiment. Fig. 6 is an explanatory view illustrating the second gas supply unit according to the first embodiment. Fig. 7 is an enlarged explanatory view of a portion B in fig. 2. Fig. 8 is an explanatory diagram illustrating a controller of the first embodiment. Fig. 9 is an explanatory diagram illustrating a processing flow of the substrate of the first embodiment. Fig. 10 is an enlarged explanatory view corresponding to fig. 7 of the second embodiment. Detailed Description The following description relates to a first embodiment of the present disclosure. The same reference numerals are used to denote the same or similar components in the drawings. In the embodiments described below, the description and symbols repeated may be omitted. The drawings used in the following description are schematic, and the relationship between the dimensions of the elements shown in the drawings, the ratio of the elements, and the like do not necessarily coincide with reality. The dimensional relationships of the elements, the ratios of the elements, and the like do not necessarily coincide with each other among the plurality of drawings. First embodiment First, a substrate processing apparatus 100 according to the present embodiment will be described with reference to fig. 1 to 7. In fig. 1, the lower side of the drawing is shown as the front, and the upper side of the drawing is shown as the rear. (Substrate processing apparatus) The substrate processing apparatus 100 includes an IO stage (load port) 110, an atmosphere transfer unit 120, a load lock unit 130, a vacuum transfer unit 140, and a substrate processing unit 150. The substrate processing section 150 includes a processing chamber 201, a substrate support table 210 as an example of a substrate support section, a first gas supply section 300, an inert gas supply section 320, a first wall 351, a first exhaust passage 361, and a second exhaust passage 362. (Atmospheric transport Chamber/IO platform) An IO stage (load interface) 110 is provided in front of the substrate processing apparatus 100. A plurality of wafer containers 111 are mounted on the IO stage 110. The wafer container 111 is a substrate used as a carrier for transporting a silicon (Si) substrate or the like, and a plurality of unprocessed product substrates PS (Product Substrate), processed product substrates PS, and dummy substrates DS (Dummy Substr