CN-122029994-A - Circulation of non-PFAS fluids through substrate processing system components in liquid and supercritical fluid states

Abstract

A substrate processing system for processing a substrate includes a component, a cooling circuit, and at least one controller. The component contains one or more coolant channels. The cooling circuit is configured to circulate a non-PFAS fluid through the one or more coolant passages to cool the first component. The non-PFAS fluid satisfies at least one of i) the absence of a polyfluoroalkyl species and the absence of a perfluoroalkyl species and ii) the absence of a carbon-fluorine bond. The at least one controller is configured to adjust at least one parameter of the non-PFAS fluid to maintain the non-PFAS fluid in at least one of a liquid, gaseous, and supercritical fluid state during processing of the substrate.

Inventors

• Justin Palmer Friedman
• Lawrence Durrell Paul Ehrlich
• KEVIN FLYNN

Assignees

• 朗姆研究公司

Dates

Publication Date

20260512

Application Date

20240925

Priority Date

20231012

Claims (20)

1. 1. A substrate processing system for processing a substrate, the substrate processing system comprising: A first component comprising one or more coolant channels; a cooling circuit configured to circulate a first non-PFAS fluid through the one or more coolant channels to cool the first component, wherein the first non-PFAS fluid satisfies at least one of i) the absence of a polyfluoroalkyl species and the absence of a perfluoroalkyl species and ii) the absence of a fluorocarbon bond, and At least one controller configured to adjust at least one parameter of the first non-PFAS fluid to maintain the first non-PFAS fluid in at least one of a liquid, gaseous, and supercritical fluid state during processing of the substrate.
2. 2. The substrate processing system of claim 1, wherein the cooling circuit is configured to circulate only one or more non-PFAS fluids including the first non-PFAS fluid through the first component.
3. 3. The substrate processing system of claim 1, wherein the cooling circuit is configured to circulate only fluid without fluorine through the first component.
4. 4. The substrate processing system of claim 1, wherein the cooling circuit is configured to maintain the first non-PFAS fluid in the liquid, gaseous, or supercritical fluid state during processing of the substrate.
5. 5. The substrate processing system of claim 1, wherein the first non-PFAS fluid comprises at least one of carbon dioxide (CO 2 ), nitrogen (N 2 ), ammonia (NH 3 ), and nitrous oxide (N 2 O).
6. 6. The substrate processing system of claim 1, wherein the at least one controller is configured to adjust the pressure of the first non-PFAS fluid to be greater than 150 psi.
7. 7. The substrate processing system of claim 1, wherein the at least one controller is configured to adjust the pressure of the first non-PFAS fluid to be between 50 psi-2000 psi.
8. 8. The substrate processing system of claim 1, wherein the at least one controller is configured to adjust the pressure of the first non-PFAS fluid to a pressure between 50 psi and a pressure equal to twice the minimum supercritical point pressure of the first non-PFAS fluid.
9. 9. The substrate processing system of claim 1, wherein the first non-PFAS fluid is i) flammable, ii) has a kinematic viscosity level of less than or equal to 10 cSt, iii) has a resistivity of greater than or equal to 10 8 Ω -cm, and iv) is non-toxic.
10. 10. The substrate processing system of claim 1, wherein the at least one controller is configured to maintain a kinematic viscosity of the first non-PFAS fluid at less than or equal to 10 cSt.
11. 11. The substrate processing system of claim 1, wherein: The cooling circuit is configured to circulate a plurality of non-PFAS fluids through the one or more coolant channels to cool the first component, and to switch between the plurality of non-PFAS fluids to provide a fluid operating temperature range between-100 ℃ and 110 ℃; the plurality of non-PFAS fluids having different temperature ranges in which the plurality of non-PFAS fluids are in a liquid, gaseous or supercritical fluid state, and The different temperature ranges have an overall minimum temperature and an overall maximum temperature defining the fluid operating temperature range.
12. 12. The substrate processing system of claim 1, wherein the cooling circuit is configured to circulate PFAS fluid and the first non-PFAS fluid through the first component.
13. 13. The substrate processing system of claim 1, wherein the first component is a substrate support, a showerhead, a radio frequency electrode, a liner, a chamber wall of a process chamber, a window, or a lid of the process chamber.
14. 14. The substrate processing system of claim 1, wherein the cooling circuit is configured to circulate the first non-PFAS fluid or another non-PFAS fluid through a plurality of components including the first component.
15. 15. A method of controlling a temperature of at least one component of a substrate processing system, the method comprising: determining a parametric curve for a first non-PFAS fluid for a duration of a process performed on a substrate; Setting parameters of a cooling circuit providing the first non-PFAS fluid to the at least one component based on the parameter profile, wherein the at least one component includes one or more coolant channels; Circulating the first non-PFAS fluid through the one or more coolant channels to cool the at least one component, wherein the first non-PFAS fluid satisfies at least one of i) the absence of polyfluoroalkyl species and the absence of perfluoroalkyl species, and ii) the absence of fluorocarbon bonds, and At least one parameter of the first non-PFAS fluid is adjusted to maintain the first non-PFAS fluid in at least one of a liquid, gaseous, and supercritical fluid state during processing of the substrate.
16. 16. The method of claim 15, further comprising circulating only one or more non-PFAS fluids including the first non-PFAS fluid through the at least one component.
17. 17. The method of claim 15, further comprising circulating only fluid without fluorine through the first component.
18. 18. The method of claim 15, further comprising maintaining the first non-PFAS fluid in the liquid, gaseous, or supercritical fluid state during processing of the substrate.
19. 19. The method of claim 15, wherein the first non-PFAS fluid comprises at least one of carbon dioxide (CO 2 ), nitrogen (N 2 ), ammonia (NH 3 ), and nitrous oxide (N 2 O).
20. 20. The method of claim 15, further comprising adjusting a pressure of the first non-PFAS fluid to be greater than 150 psi.

Description

Circulation of non-PFAS fluids through substrate processing system components in liquid and supercritical fluid states Cross Reference to Related Applications The present application claims the benefit of U.S. provisional application No. 63/543,818 filed on 10/12 of 2023. The entire disclosure of the above-referenced application is incorporated herein by reference. Technical Field The present disclosure relates to a temperature control system for controlling the temperature of components of a substrate processing chamber. Background The background description provided herein is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure. Substrate processing systems typically include a plurality of processing chambers (also referred to as processing modules) to perform deposition, etching, and other processing of substrates, such as semiconductor wafers. For example, deposition may be performed using Chemical Vapor Deposition (CVD), plasma Enhanced CVD (PECVD), atomic Layer Deposition (ALD), plasma Enhanced ALD (PEALD), and/or other deposition processes to deposit conductive films, dielectric films, or other types of films. During deposition, the substrate is disposed on a substrate support (e.g., susceptor) and one or more precursor gases may be supplied to the process chamber during one or more process steps using a gas distribution apparatus (e.g., showerhead). In PECVD or PEALD processes, a plasma is used to activate chemical reactions within the process chamber during deposition. Additional examples of processes that may be performed on the substrate include, but are not limited to, dielectric etching, chemical etching, plasma etching, reactive ion etching, and cleaning processes. During the deposition and etching processes, a gas mixture is introduced into the process chamber via a showerhead and a plasma is initiated to activate the chemical reaction. During the cleaning process, gas may also be introduced via the showerhead. Disclosure of Invention A substrate processing system for processing a substrate is disclosed herein. The substrate processing system includes a first component including one or more coolant channels, a cooling circuit configured to circulate a first non-PFAS fluid through the one or more coolant channels to cool the first component, wherein the first non-PFAS fluid meets at least one of i) an absence of a polyfluoroalkyl species and an absence of a perfluoroalkyl species, and ii) an absence of a fluorocarbon bond, and at least one controller configured to adjust at least one parameter of the first non-PFAS fluid to maintain the first non-PFAS fluid in at least one of a liquid, gaseous, and supercritical fluid state during processing of the substrate. In other features, the cooling circuit is configured to circulate only one or more non-PFAS fluids including the first non-PFAS fluid through the first component. In other features, the cooling circuit is configured to circulate only fluid without fluorine through the first component. In other features, the cooling circuit is configured to maintain the first non-PFAS fluid in the liquid, gaseous, or supercritical fluid state during processing of the substrate. In other features, the first non-PFAS fluid comprises at least one of carbon dioxide (CO 2), nitrogen (N 2), ammonia (NH 3), and nitrous oxide (N 2 O). In other features, the at least one controller is configured to adjust the pressure of the first non-PFAS fluid to be greater than 150 psi. In other features, the at least one controller is configured to adjust the pressure of the first non-PFAS fluid to between 50 psi-2000 psi. In other features, the at least one controller is configured to adjust the pressure of the first non-PFAS fluid to between 50 psi and a pressure equal to twice the minimum supercritical point pressure of the first non-PFAS fluid. In other features, the first non-PFAS fluid is i) flammable, ii) has a kinematic viscosity level of less than or equal to 10 cSt, iii) has a resistivity of greater than or equal to 10 8 Ω -cm, and iv) is non-toxic. In other features, the at least one controller is configured to maintain a kinematic viscosity of the first non-PFAS fluid less than or equal to 10 cSt. In other features, the cooling circuit is configured to circulate a non-PFAS fluid through the one or more coolant channels to cool the first component, and to switch between the non-PFAS fluid to provide a fluid operating temperature range between-100 ℃ and 110 ℃. The non-PFAS fluid has different temperature ranges at which it is in a liquid, gaseous or supercritical fluid state. The different temperature ranges have an overall minimum temperature and an overall maxim