CN-122030001-A - Power conversion device

Abstract

It is an object of the present disclosure to provide a technique capable of achieving heat conduction homogenization in the surface of a heat sink. The power conversion device includes a semiconductor device, a cooler, a heat sink provided between the semiconductor device and the cooler, and a case covering an upper portion and a side portion of the semiconductor device. The semiconductor device includes a semiconductor element, an insulating side, first and second circuit patterns provided on upper and lower surfaces of the insulating side, respectively, and a sealing member. According to the present disclosure, the case is fixed to the cooler in a state of being pressed against the upper portion of the semiconductor toward the cooler side.

Inventors

• Yi Benkuanzhi

Assignees

• 三菱电机株式会社

Dates

Publication Date

20260512

Application Date

20231019

Claims (20)

1. 1. A power conversion apparatus, comprising: The semiconductor device comprises a semiconductor element, an insulating layer, a first circuit pattern, a second circuit pattern, and a sealing component, wherein the first circuit pattern is arranged on the upper surface of the insulating layer and is electrically connected with the semiconductor element; A cooler; a heat sink provided between the semiconductor device and the cooler, and A case covering an upper portion and a side portion of the semiconductor device, The case is fixed to the cooler while pressing an upper portion of the semiconductor device toward the cooler.
2. 2. The power conversion device of claim 1, wherein, The semiconductor device is pressed by the case so that the amount of compression of the heat sink pressed by the semiconductor device is larger than the amount of warpage before the semiconductor device is driven.
3. 3. The power conversion device of claim 1, wherein, The recovery amount of the heat sink is larger than a warp change amount, which is a difference between a warp amount before driving and a warp amount at the time of driving the semiconductor device.
4. 4. The power conversion device of claim 1, wherein, When the linear expansion coefficient of the insulating layer is α1, the linear expansion coefficient of the sealing member is α2, and the linear expansion coefficient of at least one of the first circuit pattern and the second circuit pattern is α3, α1≤α2≤α3 holds.
5. 5. The power conversion device of claim 1, wherein, The thickness of the first circuit pattern is greater than the thickness of the second circuit pattern.
6. 6. The power conversion device of claim 1, wherein, The width of the heat sink is smaller than the width of at least one of the first circuit pattern and the second circuit pattern; The semiconductor element is disposed inside the outer edge of the heat sink in a plan view.
7. 7. The power conversion device of claim 1, wherein, The surface pressure obtained by dividing the pressing from the case to the semiconductor device by the area of the heat sink is greater than the surface pressure necessary for deforming the heat sink in accordance with the amount of warpage of the semiconductor device before driving.
8. 8. The power conversion device of claim 1, wherein, The box includes: A body having insulation property, and And an elastic member provided to the body and configured to press the upper portion of the semiconductor device toward the cooler side.
9. 9. The power conversion device of claim 8, wherein, The resilient member is partially embedded in the body.
10. 10. The power conversion device of claim 8, wherein, The restoring force of the elastic member varies nonlinearly with respect to the displacement variation of the elastic member.
11. 11. The power conversion device of claim 1, wherein, One of the cases presses the upper portions of the plurality of semiconductor devices toward the cooler side.
12. 12. The power conversion device of claim 11, wherein, One of the heat sinks is disposed between the plurality of semiconductor devices and the cooler.
13. 13. The power conversion device of claim 11, wherein, Each of the semiconductor elements in the plurality of semiconductor devices includes a high-side semiconductor element and a low-side semiconductor element having a 2in1 wiring structure.
14. 14. The power conversion device of claim 11, wherein, Each of the semiconductor elements of the plurality of semiconductor devices includes a first semiconductor element and a second semiconductor element, In each of the plurality of semiconductor devices, a terminal of the first semiconductor element protrudes from a first side face of the sealing member, and a terminal of the second semiconductor element protrudes from a second side face of the sealing member on an opposite side of the first side face; The plurality of semiconductor devices are arranged adjacent to each other on the sides other than the first side and the second side.
15. 15. The power conversion device of claim 1, wherein, A protrusion protruding toward the cooler is provided on the sealing member; the cooler is provided with a fitting hole for fitting the protruding portion.
16. 16. The power conversion device of claim 1, wherein, Grooves for determining the position of the fins in the in-plane direction are provided in the cooler.
17. 17. The power conversion device of claim 15, wherein, An opening is arranged on the radiating fin; The protruding portion of the sealing member passes through the opening portion.
18. 18. The power conversion device of claim 1, wherein, An opening is arranged on the radiating fin; A protruding portion penetrating the opening portion is provided on the cooler.
19. 19. The power conversion device of claim 18, wherein, The seal member is provided with a fitting hole to be fitted to the protruding portion of the cooler.
20. 20. The power conversion device of claim 1, wherein, The semiconductor device further includes a control board fixed to the case and controlling the semiconductor device.

Description

Power conversion device Technical Field The present disclosure relates to power conversion devices. Background Various techniques are provided for a power conversion device including a semiconductor device. For example, patent document 1 proposes a technique of providing a heat sink between a semiconductor device and a cooling plate (heat sink), thereby reducing a gap generated when the semiconductor device is fastened to the cooling plate, and improving heat conduction between the semiconductor device and the cooling plate. [ Prior Art literature ] [ Patent literature ] Patent document 1 Japanese patent laid-open publication No. 2013-149952 Disclosure of Invention [ Problem to be solved by the invention ] In the technique of patent document 1, since the semiconductor device is directly fastened to the cooling plate by the screw, the pressing force applied from the semiconductor device to the cooling plate is concentrated on the periphery of the fastening portion. Therefore, the surface pressure applied to the heat sink by the semiconductor device becomes uneven, and a gap is generated between the semiconductor device and the heat sink. As a result, heat conduction in the heat sink surface becomes uneven, and the heat dissipation performance of the power conversion device is deteriorated. Further, as a countermeasure against deterioration of heat dissipation, if the semiconductor element is made larger in order to reduce the amount of heat generation, there is a problem that it is difficult to achieve miniaturization of the semiconductor device and the power conversion device. Accordingly, the present disclosure has been made in view of the above-described problems, and an object thereof is to provide a technique capable of uniformizing heat conduction in a fin surface. Technical means for solving the technical problems The power conversion device includes a semiconductor device including a semiconductor element, an insulating layer, a first circuit pattern provided on an upper surface of the insulating layer and electrically connected to the semiconductor element, a second circuit pattern provided on a lower surface of the insulating layer, and a sealing member that covers the semiconductor element, the insulating layer, and the first circuit pattern, a cooler, a heat sink provided between the semiconductor device and the cooler, and a case that covers an upper portion and a side portion of the semiconductor device, the case being fixed to the cooler in a state in which the upper portion of the semiconductor device is pressed toward the cooler side. Effects of the invention According to the present disclosure, the case is fixed to the cooler while being pressed against the upper portion of the semiconductor device toward the cooler. With this configuration, heat conduction in the fin surface can be made uniform. The objects, features, aspects and advantages of the present disclosure will become more apparent from the following detailed description and the accompanying drawings. Drawings Fig. 1 is a cross-sectional view showing the structure of a power conversion device according to embodiment 1. Fig. 2 is a cross-sectional view showing a state of initial warpage of the semiconductor device according to embodiment 1. Fig. 3 is a cross-sectional view showing a state of initial warpage of the power conversion device according to embodiment 1. Fig. 4 is a cross-sectional view showing a state when the semiconductor device according to embodiment 1 is driven. Fig. 5 is a cross-sectional view showing a state of the power conversion device according to embodiment 1 when the related device is driven. Fig. 6 is a cross-sectional view showing a state when the power conversion device according to embodiment 1 is driven. Fig. 7 is a cross-sectional view showing the structure of the power conversion device according to embodiment 1. Fig. 8 is a cross-sectional view showing the structure of a power conversion device according to embodiment 2. Fig. 9 is a cross-sectional view showing the structure of a power conversion device according to embodiment 2. Fig. 10 is a side view showing a configuration of a power conversion device according to embodiment 3. Fig. 11 is a perspective view showing the structure of a power conversion device according to embodiment 3. Fig. 12 is a circuit diagram showing a structure of the semiconductor device according to embodiment 3. Fig. 13 is a side view showing a structure of a power conversion device according to embodiment 3. Fig. 14 is a cross-sectional view showing the structure of a power conversion device according to embodiment 4. Fig. 15 is a cross-sectional view showing the structure of a power conversion device according to embodiment 4. Fig. 16 is a cross-sectional view showing the structure of a power conversion device according to embodiment 4. Fig. 17 is a cross-sectional view showing the structure of a power conversion device according to embodiment 4. Fig. 18 is a cross-secti