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CN-122030005-A - Semiconductor device, signal transmission device, electronic apparatus, and vehicle

CN122030005ACN 122030005 ACN122030005 ACN 122030005ACN-122030005-A

Abstract

A semiconductor device (410) includes an input terminal (411 a), a threshold voltage generation circuit (411 d), and at least one comparison circuit (411 e). The threshold voltage generation circuit (411 d) is configured to generate at least one threshold voltage (Vthx to VthxN) containing a fluctuation component depending on the power supply voltage (VCC 1). The comparison circuit (411 e) is configured to compare an input signal (AIN) with threshold voltages (Vthx to VthxN) to generate comparison signals (S1 to SN) based on the result of the comparison.

Inventors

  • Zegang Guangming
  • Liu Daodahui

Assignees

  • 罗姆股份有限公司

Dates

Publication Date
20260512
Application Date
20241021
Priority Date
20231023

Claims (10)

  1. 1. A semiconductor device, comprising: an input terminal configured to receive an input signal containing a fluctuation component depending on a power supply voltage as an external input; A threshold voltage generation circuit configured to generate at least one threshold voltage including a fluctuation component depending on the power supply voltage, and At least one comparison circuit configured to compare the input signal with the threshold voltage to generate a comparison signal based on a comparison result.
  2. 2. The semiconductor device according to claim 1, wherein The threshold voltage generation circuit is configured to generate the threshold voltage by dividing the power supply voltage.
  3. 3. The semiconductor device according to claim 1 or 2, wherein The input signal is an analog signal.
  4. 4. The semiconductor device according to any one of claims 1 to 3, further comprising a pulse signal generation circuit configured to generate a pulse signal from the comparison signal.
  5. 5. The semiconductor device according to claim 4, wherein The pulse signal generating circuit changes at least one of a pulse period and an on-duty of the pulse signal according to the comparison signal.
  6. 6. The semiconductor device according to claim 4 or 5, wherein The threshold voltage generation circuit is configured to generate a plurality of threshold voltages, Providing a plurality of comparison circuits for generating a plurality of comparison signals according to the result of comparing the input signal with each of a plurality of threshold voltages, and The pulse signal generating circuit generates the pulse signal from the plurality of comparison signals.
  7. 7. A signal transmission device, comprising: A transmitting circuit; Receiving circuit, and An isolation element configured to transmit a pulse signal between the transmission circuit and the reception circuit while being isolated between the transmission circuit and the reception circuit, Wherein the transmission circuit is the semiconductor device according to any one of claims 4 to 6.
  8. 8. The signal transfer apparatus of claim 7, further comprising: A first chip on which the transmission circuit is integrated; A second chip on which the receiving circuit is integrated, and A third chip on which the isolation element is integrated, Wherein the first chip, the second chip, and the third chip are encapsulated in a single package.
  9. 9. An electronic device comprising a signal transmission apparatus according to claim 7 or 8.
  10. 10. A vehicle comprising the electronic device according to claim 9.

Description

Semiconductor device, signal transmission device, electronic apparatus, and vehicle Technical Field The invention disclosed in the present specification relates to a semiconductor device, a signal transmission device, an electronic apparatus, and a vehicle. Background Signal transfer devices are known to transfer signals between primary circuitry and secondary circuitry while being electrically isolated between the primary circuitry and secondary circuitry. Such signal transmission devices are used in various applications (e.g., power supply devices and motor drive devices). An example of a known technique related to the above is found in patent document 1 identified below. List of references Patent literature Patent document 1 WO 2022/070944 Disclosure of Invention Summary The semiconductor device corresponding to the primary circuit system in the signal transfer device disclosed in patent document 1 leaves room for further investigation in terms of noise in the signal fed thereto. According to one aspect disclosed herein, a semiconductor device includes an input terminal, a threshold voltage generation circuit, and at least one comparison circuit. The input terminal is configured to receive an input signal containing a fluctuation component depending on a power supply voltage as an external input. The threshold voltage generation circuit is configured to generate at least one threshold voltage including a fluctuation component depending on a power supply voltage. The comparison circuit is configured to compare the input signal with a threshold voltage to generate a comparison signal based on a comparison result. According to another aspect of the disclosure, a signal transfer apparatus includes a transmit circuit, a receive circuit, and an isolation element. The isolation element is configured to transmit a pulse signal between the transmitting circuit and the receiving circuit while isolating between the transmitting circuit and the receiving circuit. The transmission circuit is a semiconductor device configured as described above. According to another aspect of the disclosure, an electronic device includes a signaling apparatus configured as described above. According to another aspect disclosed herein, a vehicle includes an electronic device configured as described above. Drawings Fig. 1 is a diagram showing a basic structure of a signal transmission device. Fig. 2 is a diagram showing a basic structure of a transformer chip. Fig. 3 is a perspective view of a semiconductor device used as a double-channel type transformer chip. Fig. 4 is a top view of the semiconductor device shown in fig. 3. Fig. 5 is a plan view showing a layer on which a low potential coil is formed in the semiconductor device of fig. 3. Fig. 6 is a plan view showing a layer on which a high potential coil is formed in the semiconductor device of fig. 3. Fig. 7 is a cross-sectional view taken along line VIII-VIII shown in fig. 6. Fig. 8 is a diagram showing an enlarged view (separated structure) of the region XIII shown in fig. 7. Fig. 9 is a diagram schematically showing an example of layout of a transformer chip. Fig. 10 is a block diagram showing the structure of a signal transmission device 400Y according to a comparative example. Fig. 11 is a block diagram showing the constitution of a signal transmission device 400X according to an embodiment of the present disclosure. Fig. 12 is a diagram showing an appearance of the vehicle. Detailed Description < Signal Transmission device (basic Structure) >) Fig. 1 is a diagram showing a basic structure of a signal transmission device. The signal transmission device 200 of this configuration example is a semiconductor integrated circuit device (so-called insulated gate driver IC) that insulates between the primary circuit system 200p (VCC 1-GND1 system) and the secondary circuit system 200s (VCC 2-GND2 system), transmits a pulse signal from the primary circuit system 200p to the secondary circuit system 200s, and drives a gate of a switching element (not shown) provided in the secondary circuit system 200 s. For example, the signal transmission device 200 is formed by sealing the controller chip 210, the driver chip 220, and the transformer chip 230 into a single package. The controller chip 210 is a semiconductor chip that is operated by receiving supply of a power supply voltage VCC1 (for example, 7V at maximum with reference to GND 1). The controller chip 210 includes, for example, a pulse transmitting circuit 211 and buffers 212 and 213. The pulse transmitting circuit 211 is a pulse generator that generates transmission pulse signals S11 and S21 from the input pulse signal IN. More specifically, the pulse transmitting circuit 211 performs pulse driving (single or multiple transmission pulse output) of the transmission pulse signal S11 when the notification input pulse signal IN is at the high level, and performs pulse driving of the transmission pulse signal S21 when the notification in