CN-224199474-U - Continuous chemical vapor deposition system

CN224199474UCN 224199474 UCN224199474 UCN 224199474UCN-224199474-U

Abstract

The utility model discloses a continuous chemical vapor deposition system, which relates to the field of silicon carbon production and manufacturing equipment and comprises a deposition unit, a detection unit, a coating unit and a material collecting unit, wherein the deposition unit comprises a deposition furnace and a buffer furnace, the feed end of the buffer furnace is communicated with the discharge end of the deposition furnace, the feed unit is communicated with the feed end of the deposition furnace, the detection unit is communicated with the discharge end of the buffer furnace, gas-solid separation is carried out on materials of the buffer furnace, automatic detection is carried out on gas, automatic sampling is carried out on the solid, the coating unit comprises a coating furnace and a coating air inlet pipeline, the coating furnace is used for introducing solid materials subjected to gas-solid separation treatment, and the material collecting unit is communicated with the discharge end of the coating furnace. The continuous system can reduce the material transportation among different working procedures, automatically adjust the process, greatly improve the production efficiency and meet the requirement of mass production.

Inventors

YUE MIN
QIU XIAOYU
DU NING

Assignees

碳一新能源集团有限责任公司
浙江锂宸新材料科技有限公司
碳一新能源(杭州)有限责任公司

Dates

Publication Date: 20260505
Application Date: 20250428

Claims (14)

1. A continuous chemical vapor deposition system comprising at least: The deposition unit comprises a deposition furnace and a buffer furnace, wherein the feeding end of the buffer furnace is communicated with the discharging end of the deposition furnace; The feeding unit is communicated with two ends of the deposition furnace and comprises a porous carbon feeding device and a gas transmission device, wherein the porous carbon feeding device is communicated with the feeding end of the deposition furnace, and the gas transmission device is communicated with the discharging end of the deposition furnace; The detection unit is communicated with the discharge end of the buffer furnace, performs gas-solid separation on materials of the buffer furnace, automatically detects gas and automatically samples solids, and The coating unit comprises a coating furnace and a coating air inlet pipeline, wherein the coating furnace is used for introducing solid materials subjected to gas-solid separation treatment.
2. The continuous chemical vapor deposition system of claim 1, wherein the deposition furnace and/or buffer furnace is columnar, and the aspect ratio of the deposition furnace and/or buffer furnace is 5-15:1; And/or the deposition furnace and/or the buffer furnace comprises a furnace body and a shell, wherein the shell is sleeved on the furnace body; And/or a heat-insulating interlayer is arranged between the furnace body and the shell, and a plurality of heating components are arranged in the heat-insulating interlayer; And/or a plurality of material guide plates are arranged on the inner wall of the furnace body, and the material guide plates are uniformly distributed along the axis direction of the furnace body; the deposition furnace and/or the buffer furnace are/is arranged on the support, the support drives the deposition furnace and/or the buffer furnace to rotate, and the rotating speed of the buffer furnace is greater than that of the deposition furnace.
3. The continuous chemical vapor deposition system of claim 1, wherein the detection unit comprises a first gas-solid separator that performs gas-solid separation on the material of the buffer furnace, gas being directed out of a gas separation conduit, and solids being directed out of a solids separation conduit.
4. The continuous chemical vapor deposition system of claim 3, wherein a filter membrane is disposed on an inner wall of the first gas-solid separator, and the filter membrane is located at a junction between the first gas-solid separator and the gas separation pipe.
5. The continuous chemical vapor deposition system of claim 3 wherein the first gas-solid separator is a cyclone separator.
6. The continuous chemical vapor deposition system according to claim 3, wherein the detection unit further comprises a master controller and a gas detector, and the gas-solid separator is communicated with the gas detector through a gas separation branch pipe to automatically detect the separated gas; The master controller is electrically connected with the gas detector and controls the gas detector to automatically detect.
7. The continuous chemical vapor deposition system of claim 6, wherein the detection unit further comprises a take-out bin, the gas-solid separator being in communication with the take-out bin through a solids separation branch conduit; And the solid separation branch pipeline is provided with a material taking valve, and the master controller is electrically connected with the material taking valve and controls the material taking bin to automatically sample.
8. The continuous chemical vapor deposition system of claim 7 wherein the feed unit comprises a porous carbon feed device in communication with the deposition furnace feed end and a gas delivery device in communication with the deposition furnace discharge end; and/or the porous carbon feeding device comprises a feeding bin and a feeding pipeline, wherein the feeding pipeline extends to the inside of the deposition furnace; and/or the gas transmission device comprises an air inlet pipeline and an air inlet valve, and the air flow in the air inlet pipeline is regulated and controlled through the air inlet valve; And/or the air inlet pipeline comprises a first air inlet pipeline, a second air inlet pipeline and a third air inlet pipeline, the first air inlet pipeline and the second air inlet pipeline are connected in parallel to a gas mixer, and the gas mixer is communicated with the deposition furnace through the third air inlet pipeline; And/or a preheater and a first air inlet valve are arranged on the first air inlet pipeline, and the temperature of the air in the first air inlet pipeline is controlled to be 150-250 ℃ by the preheater; and/or a second air inlet valve is arranged on the second air inlet pipeline; and/or a third air inlet valve is arranged on the third air inlet pipeline.
9. The continuous chemical vapor deposition system of claim 8 wherein the master controller is electrically coupled to the first intake valve and controls the first intake valve to automatically close.
10. The continuous chemical vapor deposition system of claim 8, wherein the detection unit further comprises a gas alarm, the gas alarm is disposed at a discharge end of the buffer furnace, and the gas alarm is electrically coupled to the first gas inlet valve; The gas alarm gives an alarm and controls the first air inlet valve to be closed automatically.
11. The continuous chemical vapor deposition system of claim 8, wherein a cladding air inlet valve is arranged on the cladding air inlet pipeline, and the master controller is electrically connected with the cladding air inlet valve and controls the cladding air inlet valve to automatically open and close.
12. The continuous chemical vapor deposition system of claim 1, further comprising a receiving unit in communication with a discharge end of the coating furnace; The material receiving unit comprises a second gas-solid separator, the second gas-solid separator carries out gas-solid separation on the materials of the cladding furnace, the separated gas is conveyed to the tail gas treatment device, and the separated solid materials are conveyed to the transfer bin; And/or the transfer bin is provided with a hollow interlayer, and a circulating water cooling coil pipe is arranged in the hollow interlayer to cool down and cool down materials in the transfer bin.
13. The continuous chemical vapor deposition system of claim 12 wherein the second gas-solid separator is a cyclone separator.
14. The continuous chemical vapor deposition system of claim 11, wherein: The master controller controls the gas detector to detect the silicon source gas content once every 10 minutes, and controls the cladding air inlet valve to open and the cladding air to be introduced into the cladding furnace when the silicon source gas content is detected to be less than 0.2 mg/L; and when the silicon source gas content detected by the gas detector is more than or equal to 0.2mg/L, the master controller controls the first air inlet valve to be closed, and controls the cladding air inlet valve and the material taking valve to be closed.

Description

Continuous chemical vapor deposition system Technical Field The utility model relates to silicon-carbon anode material production and manufacturing equipment, in particular to a continuous chemical vapor deposition system. Background With the rapid development of new energy industries, the energy density of lithium ion batteries is expected to be further increased in society, and the development of cathode battery materials with high specific energy is urgent. The commercial graphite anode material at the present stage is close to the theoretical specific capacity limit (372 mAh/g), and in order to further improve the energy density of the battery, searching for an anode material with higher specific capacity becomes an important industrial research. Silicon is alloyed with lithium at normal temperature, the theoretical specific capacity is up to 4200mAh/g, which is ten times higher than that of the existing graphite negative electrode material, the hidden danger of lithium precipitation does not exist, the safety is better than that of the graphite negative electrode material, the storage is rich, the cost is low, and the lithium negative electrode material is the new generation lithium battery negative electrode material with the highest potential. The silane composite active material can integrate the respective advantages of the silicon material and the carbon material, has wide raw material sources and plays a role in better performance. In the preparation process of the silicon-carbon material, a Chemical Vapor Deposition (CVD) method has the advantages of low cost, high technical maturity and the like, and is a mainstream technology for preparing the silicon-carbon material. At present, a batch system is mainly adopted for preparing the silicon-carbon anode material by a CVD method, namely, only one small batch of material preparation is carried out at a time, and the next material preparation is carried out after the preparation is finished. The batch preparation method is simple, but has low efficiency, and cannot meet the requirement of large-scale production. In addition, in the CVD preparation process, dangerous gases such as acetylene, methane, hydrogen and the like are needed, and if the sealing effect is poor, explosion is easy to generate, so that the workers are injured. Secondly, the temperature control of the existing CVD preparation furnace is not accurate enough, and the sufficient mixing of silane and carbon cannot be ensured, so that the preparation quality of the silicon-carbon material is affected. In view of this, the present utility model has been made. Disclosure of Invention The utility model aims to provide a continuous chemical vapor deposition system which can reduce the material transportation among different working procedures, greatly improve the production efficiency of a CVD preparation method and meet the requirement of mass production. In order to achieve the above purpose, the present utility model provides the following technical solutions: The utility model provides a continuous chemical vapor deposition system, which at least comprises: The deposition unit comprises a deposition furnace and a buffer furnace, wherein the feeding end of the buffer furnace is communicated with the discharging end of the deposition furnace; the feeding unit is communicated with two ends of the deposition furnace; The detection unit is communicated with the discharge end of the buffer furnace, performs gas-solid separation on materials of the buffer furnace, automatically detects gas and automatically samples solids, and The coating unit comprises a coating furnace and a coating air inlet pipeline, wherein the coating furnace is used for introducing solid materials subjected to gas-solid separation treatment. In an embodiment of the utility model, the deposition furnace and/or the buffer furnace are columnar, and the length-diameter ratio of the deposition furnace and/or the buffer furnace is 5-15:1; And/or the deposition furnace and/or the buffer furnace comprises a furnace body and a shell, wherein the shell is sleeved on the furnace body; And/or a heat-insulating interlayer is arranged between the furnace body and the shell, and a plurality of heating components are arranged in the heat-insulating interlayer; And/or a plurality of material guide plates are arranged on the inner wall of the furnace body, and the material guide plates are uniformly distributed along the axis direction of the furnace body; the deposition furnace and/or the buffer furnace are/is arranged on the support, the support drives the deposition furnace and/or the buffer furnace to rotate, and the rotating speed of the buffer furnace is greater than that of the deposition furnace. In an embodiment of the utility model, the detection unit comprises a first gas-solid separator, the first gas-solid separator performs gas-solid separation on the material of the buffer furnace, gas is led out from a gas separation pip