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CN-224204097-U - Low-pressure gas supply device for ion implanter

CN224204097UCN 224204097 UCN224204097 UCN 224204097UCN-224204097-U

Abstract

The utility model relates to a low-pressure gas supply device for an ion implanter, which comprises a gas conveying system and a control system. The gas conveying system comprises a PH 3 pipeline, a BF 3 pipeline and an argon pipeline, wherein the pipelines are connected with the vacuum pipeline through a confluence safety valve after confluence and are connected with the ion source chamber. The PH 3 pipeline and the BF 3 pipeline are respectively provided with an SDS low-pressure source gas bottle serving as a gas source, and are connected through a 1/4VCR interface, and are provided with a pressure gauge, a pressure sensor, a manual valve, a pneumatic control valve and a mass flow controller to accurately control the gas flow. The argon pipeline comprises a process pipeline and a purging pipeline, the purging pipeline is connected into the PH 3 pipeline and the BF 3 pipeline, and the purging pipeline is controlled by a pneumatic control valve and is used for purging toxic gas before replacing a gas cylinder. The utility model reduces the leakage risk of high-pressure toxic gas by adopting the low-pressure gas source and the mass flow controller, improves the flow control precision to 1 percent, improves the maintenance safety by the purging pipeline, and is suitable for various ion implantation equipment.

Inventors

  • Tang Daifei
  • LAI ZHONGLIANG
  • TIAN YONG
  • LI QINGWEI
  • ZHANG YI

Assignees

  • 中国电子科技集团公司第四十四研究所

Dates

Publication Date
20260505
Application Date
20250516

Claims (7)

  1. 1. The low-pressure gas supply device for the ion implanter is characterized by comprising a gas conveying system and a control system, wherein the gas conveying system comprises a PH 3 pipeline, a BF 3 pipeline and an argon pipeline; The PH 3 pipeline, the BF 3 pipeline and the argon pipeline are connected to the vacuum pipeline through a confluence safety valve after confluence, and are connected with the ion source chamber through the vacuum pipeline; An SDS low-pressure source gas cylinder and a mass flow controller are respectively arranged in the PH 3 pipeline and the BF 3 pipeline, the SDS low-pressure source gas cylinder is respectively used as a gas source of process gas PH 3 and BF 3 , and the gas flow is controlled by the mass flow controller; The argon pipeline comprises an argon process pipeline and a purging pipeline, wherein the argon process pipeline is connected with the vacuum pipeline and used for conveying argon as process gas, and the purging pipeline is respectively connected with a PH 3 pipeline and a BF 3 pipeline and is used for purging toxic gas before replacing a gas cylinder.
  2. 2. The low-pressure gas supply device for an ion implanter according to claim 1, wherein the PH 3 pipeline further comprises a pressure gauge, a pressure sensor, a manual valve and a pneumatic valve, the SDS low-pressure source gas cylinder is connected with the vacuum pipeline through a 1/4VCR interface, the pressure gauge, the pressure sensor and the mass flow controller are respectively arranged on three parallel branches, two branches provided with the pressure gauge and the pressure sensor are respectively connected with the vacuum pipeline through the manual valve, and the pneumatic valve is arranged on the branch provided with the mass flow controller, and the on-off control is performed through a control system.
  3. 3. The low-pressure gas supply device for an ion implanter according to claim 1, wherein the BF 3 pipeline further comprises a pressure gauge, a pressure sensor, a manual valve and a pneumatic valve, the SDS low-pressure source gas cylinder is connected with the vacuum pipeline through a 1/4VCR interface, the pressure gauge, the pressure sensor and the mass flow controller are respectively arranged on three parallel branches, two branches provided with the pressure gauge and the pressure sensor are respectively connected with the vacuum pipeline through the manual valve, and the branch provided with the mass flow controller is provided with the pneumatic valve, and the on-off control is performed through a control system.
  4. 4. The low-pressure gas supply apparatus for an ion implanter according to claim 2 or 3, wherein the pressure sensor and the mass flow controller are connected to a control system.
  5. 5. The low-pressure gas supply device for an ion implanter of claim 1, wherein the argon process pipeline is sequentially provided with a manual valve, a pressure reducing valve, a pressure gauge and a mass flow controller, and the control system controls the flow of argon through the mass flow controller.
  6. 6. The low-pressure gas supply device for an ion implanter of claim 1, wherein the purge line is parallel to the argon process line, and a manual valve is disposed in the purge line to manually control the purging operation.
  7. 7. A low pressure gas supply apparatus for an ion implanter according to claim 2 or 3, wherein the control system comprises: The high-precision gas flow controller and the power supply module are connected to the mass flow controller and are used for controlling the gas flow; The photoelectric conversion circuit is respectively connected with the pressure sensor and the mass flow controller and is used for collecting pressure and flow signals; and the digital display screen is connected with the photoelectric conversion circuit and used for displaying pressure and flow values and realizing digital monitoring of the pressure and the flow.

Description

Low-pressure gas supply device for ion implanter Technical Field The utility model relates to the technical field of semiconductor equipment engineering, in particular to a low-pressure gas supply device for an ion implanter, which is applicable to a gas supply system of large-beam ion implantation equipment. Background Ion implantation is a critical process in the semiconductor manufacturing process, and the functional design of the semiconductor device is realized by introducing a controlled amount of impurities into the silicon substrate to change the electrical properties thereof. The ion implantation process is typically performed in an ion implanter, with the core step of delivering a desired gaseous source from a gas cylinder to an ion source chamber, performing ionization of the gas in the chamber to generate an ion beam, and subsequently implanting the ion beam into a silicon substrate. The stable supply and precise control of the gaseous source directly affects the accuracy and consistency of the ion implantation process, and thus the gas supply system plays an important role in the ion implanter. The conventional ion implanter gas supply system mostly adopts a high-pressure gas cylinder gas supply mode. Taking the NV10-160 large beam ion implanter produced in 1983 by ETON in the united states as an example, the original gas source system is a high-pressure gas source system, the process gas (such as PH 3、BF3) is stored in a high-pressure gas cylinder, and the pressure in the gas cylinder can be up to 700psi. After the gas flows out of the high-pressure gas cylinder, the gas passes through the gas cylinder stop valve, the preliminary pressure adjustment is carried out through the pressure regulating valve with the pressure gauge and the control pneumatic valve, then the gas flow is adjusted through the needle valve, and finally the gas enters the ion source chamber through the confluence valve to complete the supply of the gas source. The high-pressure air supply mode can meet basic process requirements under the current technical background, but a plurality of problems are gradually exposed in practical application. First, the use of high pressure cylinders presents a significant safety hazard. PH 3 (phosphine) and BF 3 (boron trifluoride) are highly toxic gases, and when the high-pressure gas cylinder is operated at a pressure of 700psi, the toxic gases can rapidly diffuse once leakage occurs, and the safety of operators is seriously threatened. In addition, the interface and the pipeline of the high-pressure gas cylinder are easy to generate tiny leakage due to aging or reduced sealing performance after long-term use, and the safety risk is further increased. Especially in semiconductor manufacturing environments, the production line often needs to run continuously, with frequent operator contact with equipment, and any leakage event can have serious consequences. Second, the equipment of the conventional gas supply system is old and lacks modern safety protection functions. Taking an NV10-160 device as an example, the original configuration system does not have a toxic gas leakage alarm function and a leakage safety interlocking function. Once gas leakage occurs, the system cannot give an alarm in time or automatically cut off the gas source, and operators can only check and find problems by means of manual work, so that the probability of occurrence of accidents is greatly increased by the passive safety management mode. In addition, conventional systems are not designed to adequately account for maintenance convenience, such as lack of purge lines, resulting in difficult removal of residual toxic gases during replacement of cylinders or maintenance lines, increasing the risk of operator exposure to toxic gases. Furthermore, the control of the gas flow in conventional systems is significantly disadvantageous. The original system adopts a needle valve to carry out flow regulation, but the regulation precision of the needle valve is lower, the flow control is unstable and the fluctuation is larger. Such unstable flow control directly affects the stability of the ion beam, resulting in poor process uniformity. In semiconductor manufacturing, process consistency is a key factor in ensuring product quality, and the existence of flow fluctuations may cause performance differences between different batches of products, thereby affecting the yield of device manufacturing. In addition, the mechanical structure of needle valves has a high failure rate during use, and frequent maintenance requirements further reduce the operating efficiency of the device. Disclosure of utility model In view of the above, the present utility model aims to solve the above problems, and provide a low-pressure gas supply device for an ion implanter, which reduces the risk of high-pressure toxic gas leakage, improves the stability of gas flow control, and improves the safety and maintenance convenience of the system. In orde