CN-224204761-U - Circuit for shortening short-circuit protection time of silicon carbide module

CN224204761UCN 224204761 UCN224204761 UCN 224204761UCN-224204761-U

Abstract

The utility model discloses a circuit for shortening short-circuit protection time of a silicon carbide module and the like, which comprises a grid isolation driving chip U6, a diode D51, a capacitor C147 and a resistor R67, wherein a power pin VCC2 of the grid isolation driving chip U6 is connected with a power end VP15V_UH, the anode of the diode D51 is grounded, the capacitor C147 is connected between the cathode and the anode of the diode D51, the cathode of the diode D51 is connected with a desaturation detection pin DESAT of the grid isolation driving chip U6, and the resistor R67 is connected between the cathode of the diode D51 and the power end VP15 V_UH. When the circuit works, the capacitor C147 is charged through the resistor R67, and the resistance value of the resistor R67 is selected to enable the short-circuit protection response time of one class to be smaller than 1.3uS, so that the function of shortening the short-circuit protection time of the silicon carbide module is realized.

Inventors

ZHANG JIEFU
HUANG SHAORONG

Assignees

深圳市依思普林科技有限公司

Dates

Publication Date: 20260505
Application Date: 20250513

Claims (5)

1. The circuit for shortening the short-circuit protection time of the silicon carbide module is characterized by comprising a grid isolation driving chip U6, a diode D51, a capacitor C147 and a resistor R67, wherein a power supply pin VCC2 of the grid isolation chip U6 is connected to a power supply end VP15V_UH, an anode of the diode D51 is grounded, the capacitor C147 is connected between a cathode and an anode of the diode D51, a cathode of the diode D51 is connected to a desaturation detection pin DESAT of the grid isolation driving chip U6, and the resistor R67 is connected between the cathode of the diode D51 and the power supply end VP15 V_UH.
2. The circuit for reducing short-circuit protection time of a silicon carbide module according to claim 1, wherein the desaturation detection pin DESAT is further connected to a sampling branch VDS.
3. The circuit for reducing the short-circuit protection time of a silicon carbide module according to claim 1, wherein the resistance of the resistor R67 is 15kΩ.
4. The circuit for reducing the short-circuit protection time of a silicon carbide module according to claim 1, comprising a capacitor C129, wherein the capacitor C129 is connected between the power terminal VP15v_uh and ground.
5. The circuit for reducing the short-circuit protection time of a silicon carbide module or the like according to claim 1, wherein the gate isolation driving chip U6 is a type UCC 2179 chip.

Description

Circuit for shortening short-circuit protection time of silicon carbide module Technical Field The present utility model relates to a short-circuit protection circuit, and more particularly, to a circuit for shortening the short-circuit protection time of silicon carbide modules. Background At present, in various grid isolation driving chips on the market, the charging current of a built-in desaturation detection constant current source is less than 500uA, the placing capacitance requirement of an external desaturation detection pin is greater than 33pF, and the internal response time is added, so that the actual desaturation detection time is greater than 2uS, and the time is greater than the short-circuit time 1.3uS which can be born by the current silicon carbide chip, and the requirement of a circuit on the short-circuit protection time cannot be met. Disclosure of utility model The utility model aims to solve the technical problem of providing a circuit which is suitable for occasions driven by silicon carbide modules and can shorten the short-circuit protection time. In order to solve the technical problems, the utility model adopts the following technical scheme. A circuit for shortening short-circuit protection time of a silicon carbide module comprises a grid isolation driving chip U6, a diode D51, a capacitor C147 and a resistor R67, wherein a power pin VCC2 of the grid isolation driving chip U6 is connected to a power end VP15V_UH, the anode of the diode D51 is grounded, the capacitor C147 is connected between the cathode and the anode of the diode D51, the cathode of the diode D51 is connected to a desaturation detection pin DESAT of the grid isolation driving chip U6, and the resistor R67 is connected between the cathode of the diode D51 and the power end VP15 V_UH. Preferably, the desaturation detection pin DESAT is also connected to the sampling branch VDS. Preferably, the resistance value of the resistor R67 is 15kΩ. Preferably, a capacitor C129 is included, and the capacitor C129 is connected between the power supply terminal VP15v_uh and ground. Preferably, the gate isolation driving chip U6 is a chip of model UCC 2179. In the circuit for shortening the short-circuit protection time of the silicon carbide module, the diode D51 is reversely connected between the desaturation detection pin DESAT of the grid isolation driving chip U6 and the ground, the resistor R67 and the capacitor C147 are sequentially connected between the power end VP15V_UH and the ground in series, the connection point of the resistor R67 and the capacitor C147 is connected with the desaturation detection pin DESAT of the grid isolation driving chip U6, and when the circuit works, the resistor R67 charges the capacitor C147, so that the short-circuit protection response time of the type is smaller than 1.3uS by selecting the resistance value of the resistor R67, and the function of shortening the short-circuit protection time of the silicon carbide module is realized. Drawings FIG. 1 is a schematic circuit diagram of the present utility model; fig. 2 is a schematic diagram of the inside of the gate isolation driving chip. Detailed Description The utility model is described in more detail below with reference to the drawings and examples. The utility model discloses a circuit for shortening short-circuit protection time of a silicon carbide module and the like, which is shown in combination with fig. 1 and 2, and comprises a grid isolation driving chip U6, a diode D51, a capacitor C147 and a resistor R67, wherein a power pin VCC2 of the grid isolation driving chip U6 is connected with a power end VP15V_UH, the anode of the diode D51 is grounded, the capacitor C147 is connected between the cathode and the anode of the diode D51, the cathode of the diode D51 is connected with a desaturation detection pin DESAT of the grid isolation driving chip U6, and the resistor R67 is connected between the cathode of the diode D51 and the power end VP15 V_UH. In the above circuit, the diode D51 is reversely connected between the desaturation detection pin DESAT of the gate isolation driving chip U6 and ground, the resistor R67 and the capacitor C147 are sequentially connected in series between the power supply end VP15v_uh and ground, the connection point of the resistor R67 and the capacitor C147 is connected with the desaturation detection pin DESAT of the gate isolation driving chip U6, and when the circuit is in operation, the resistor R67 charges the capacitor C147, and the resistance value of the resistor R67 is selected to enable the short-circuit protection response time of one type to be less than 1.3uS, thereby realizing the function of shortening the short-circuit protection time of one type of the silicon carbide module. Referring to fig. 1, in the present embodiment, the desaturation detection pin DESAT is further connected to the sampling branch VDS. As a preferred mode, the gate isolation driving chip U6 is a chip of a m