CN-224204964-U - Double-string crimping structure of power device for converter valve

CN224204964UCN 224204964 UCN224204964 UCN 224204964UCN-224204964-U

Abstract

The utility model discloses a double-string crimping structure of a power device for a converter valve, which relates to the field of flexible direct current transmission and comprises an IGBT (insulated gate bipolar transistor) crimping string, wherein the IGBT crimping string is formed by staggered stacking of a plurality of IGBTs and first radiators, the diode crimping string is formed by staggered stacking of a plurality of diodes and second radiators, the IGBT crimping string and the diode crimping string are mutually parallel and are connected through a supporting structural member to form the double-string crimping structure, the second radiators are provided with protruding structures, the protruding structures are positioned at the outer sides of the bottoms of the double-string crimping structure, first copper bars and equalizing resistors are mounted on the protruding structures, the second copper bars are mounted between the first radiators and the second radiators and correspond to the mounting positions of the first copper bars, the third copper bars and laminated busbar are sequentially stacked and mounted on the side surfaces of the double-string crimping structure, the third copper bars correspond to the mounting positions of the first copper bars, and the pipeline components are connected with the adjacent first radiators and are connected with the adjacent second radiators.

Inventors

Zheng Shunzhe
YANG BIN
LIU PENGFEI
BI LIANGFU
GUO LEI

Assignees

特变电工新疆新能源股份有限公司
特变电工西安柔性输配电有限公司

Dates

Publication Date: 20260505
Application Date: 20250423

Claims (10)

1. The double-string crimping structure of the power device for the converter valve is characterized by comprising an IGBT string, a diode string, a laminated busbar, a first copper bar, a second copper bar, a third copper bar, a voltage equalizing resistor, a pipeline component and a supporting structural member; The IGBT press string is formed by alternately stacking a plurality of IGBTs and first radiators, the diode press string is formed by alternately stacking a plurality of diodes and second radiators, the IGBT press string and the diode press string are mutually parallel and are connected through a supporting structural member to form a double-string press-connection structure, the second radiator is provided with a protruding structure, the protruding structure is positioned on the outer side of the bottom of the double-string press-connection structure, the first copper bar and the equalizing resistor are mounted on the protruding structure, the second copper bar is mounted between the first radiator and the second radiator and corresponds to the mounting position of the first copper bar, the third copper bar and the laminated busbar are sequentially stacked and mounted on the side face of the double-string press-connection structure, the third copper bar corresponds to the mounting position of the first copper bar, and the pipeline assembly is connected with the adjacent first radiator and is connected with the adjacent second radiator.
2. The power device double-string crimping structure for a converter valve according to claim 1, wherein the IGBT string comprises a plurality of IGBTs, a first lower pressure plate, a first insulating pressure block, a second insulating pressure block, a first conical pressure block, a first ball guide rod, a first belleville spring, a first upper pressure plate, a first screw rod, and a plurality of first heat sinks; The IGBT structure comprises a plurality of IGBTs, a plurality of first radiators, a first insulation pressing block, a first conical pressing block, a first ball head guide rod, a first belleville spring and a first upper pressing plate, wherein the IGBTs and the first radiators are alternately stacked to form an IGBT stacked structure, the first radiators are arranged on two sides of each IGBT, the first radiators are arranged at two ends of the IGBT stacked structure, the first insulation pressing block and the first lower pressing plate are sequentially stacked on the first radiator at one end of the IGBT stacked structure, the second insulation pressing block, the first conical pressing block, the first ball head guide rod, the first belleville spring and the first upper pressing plate are sequentially stacked on the first radiator at the other end of the IGBT stacked structure, and the first screw is connected with the first lower pressing plate and the first upper pressing plate.
3. The power device double-string crimping structure for a converter valve according to claim 2, wherein the diode string comprises a plurality of diodes, a second lower pressure plate, a third insulating pressure block, a fourth insulating pressure block, a second conical pressure block, a second ball guide rod, a second belleville spring, a second upper pressure plate, a second screw rod and a plurality of second heat sinks; The diode structure comprises a plurality of diodes, a plurality of second radiators, a plurality of insulation press blocks, a second conical press block, a second ball head guide rod, a second disc spring and a second upper press plate, wherein the diodes and the second radiators are alternately laminated to form a diode laminated structure, the second radiators are arranged on two sides of each diode, the second radiators are arranged at two ends of the diode laminated structure, the third insulation press block and the second lower press plate are sequentially stacked on the second radiators at one end of the diode laminated structure, the fourth insulation press block, the second conical press block, the second ball head guide rod, the second disc spring and the second upper press plate are sequentially stacked on the second radiators at the other end of the diode laminated structure, and the second screw is connected with the second upper press plate and the second lower press plate.
4. A power device double-string crimp structure for a converter valve according to claim 3, wherein the support structure is disposed between the first lower platen and the second lower platen and between the first upper platen and the second upper platen.
5. The dual-string crimp structure of a power device for a converter valve of claim 2, wherein the first lower pressure plate, the first conical pressure block, the first ball guide rod and the first screw are made of carbon steel.
6. The dual-string crimp structure of power device for converter valve according to claim 3, wherein the second lower pressure plate, the second conical pressure block, the second ball guide rod and the second screw are made of carbon steel.
7. The dual-string pressure welding structure of a power device for a converter valve according to claim 1, wherein the first and second heat sinks are made of aluminum alloy, and the substrates are thick plates.
8. The power device double-string crimping structure for a converter valve according to claim 1, wherein the protruding structures are symmetrically arranged on the outer side of the bottom of the double-string crimping structure, each protruding structure is provided with the first copper bar and the equalizing resistor, and the first copper bar is an L-shaped copper bar.
9. The power device double-string crimping structure for a converter valve according to claim 8, wherein the second copper bar is provided with two pieces inside the double-string crimping structure and is respectively connected with the first radiator and the second radiator corresponding to the symmetrically-arranged protruding structures.
10. The dual-string crimp structure of power device for a converter valve according to claim 8, wherein the third copper bar is provided with two pieces on an outer side surface of the dual-string crimp structure, and is respectively connected with the first radiator and the second radiator corresponding to the symmetrically arranged protruding structures.

Description

Double-string crimping structure of power device for converter valve Technical Field The utility model relates to the field of flexible direct current transmission, in particular to a power device double-string crimping structure for a converter valve. Background The flexible direct current transmission technology is a novel stable, reliable and efficient power transmission mode, is suitable for the scenes of renewable energy grid connection, island power supply, urban power grid interconnection and the like, and is an important supporting technology for the construction of a future intelligent power grid. The converter valve is a key device in a flexible direct current transmission system, and in order to cope with the current complicated and diversified situations of power supply and power grid use, the types of key components in the converter valve, namely power devices, are also more and more diversified. A crimped insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) and a crimped diode are two commonly used power devices in a flow valve to effect current transformation, which are commonly used in anti-parallel with each other. The traditional compression joint type power device packaging is to package an IGBT and a diode into an integral component, taking 4.5kV/2 kA-level devices which are widely applied to flexible direct current transmission engineering at present as an example, a plurality of power devices and a plurality of radiators are orderly staggered and separated, and are compressed into a series of compression joint assemblies by Ji Diefang and are installed inside a converter valve, wherein the compression joint surfaces of the power devices are identical in shape and size, the uniform distribution of compression joint force on the compression joint surfaces of the power devices can be ensured, and the compression joint effect is good. However, along with the change of the type selection requirement of the converter valve power device, the traditional compression type power device packaging mode is difficult to cope with complex and various requirements, a plurality of compression type IGBTs and compression type diodes begin to adopt the design forms of separate packaging, the shapes and the sizes of compression joint surfaces are different, and when the converter valve is applied, the IGBT and the diode which are separately packaged are required to be mixed and compressed into a series of compression joint assemblies, so that the problem of mismatching of the compression joint surfaces of the power device can be faced. Whether the power device can be good or not and normally run is directly influenced by the quality of the crimping effect, the non-matching crimping surface of the power device easily causes the non-uniform crimping force received by the crimping surface, and great challenges are brought to crimping. The method for coping with the mismatch of the press-contact surfaces of the power device in the prior art mainly increases the thickness of the radiator between the mismatch press-contact surfaces so as to improve the strength of the radiator, thereby dispersing uneven pressure. However, the method can cause the increase of the raw material consumption of the radiator and the volume of the converter valve, so that the manufacturing cost of the converter valve is wasted, the problem of mismatching of the crimping surfaces of adjacent power devices is not completely avoided, the crimping effect is still difficult to reach the crimping level of the identical power devices, and a certain risk is brought to the normal operation of the converter valve. Disclosure of utility model The utility model aims to provide a power device double-string crimping structure for a converter valve, which is used for solving the problem that crimping surfaces are not matched when crimping power devices are packaged under the condition that crimping power devices are different in types in the prior art. In order to achieve the above purpose, the utility model adopts the following technical scheme: The power device double-string crimping structure for the converter valve comprises an IGBT string, a diode string, a laminated busbar, a first copper bar, a second copper bar, a third copper bar, a equalizing resistor, a pipeline component and a supporting structural member; The IGBT press string is formed by alternately stacking a plurality of IGBTs and first radiators, the diode press string is formed by alternately stacking a plurality of diodes and second radiators, the IGBT press string and the diode press string are mutually parallel and are connected through a supporting structural member to form a double-string press-connection structure, the second radiator is provided with a protruding structure, the protruding structure is positioned on the outer side of the bottom of the double-string press-connection structure, the first copper bar and the equalizing resistor are mounted