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CN-224205051-U - Broadband low noise amplifier

CN224205051UCN 224205051 UCN224205051 UCN 224205051UCN-224205051-U

Abstract

The utility model discloses a broadband low-noise amplifier which comprises a first-stage common source amplifier and a second-stage common source amplifier which are sequentially connected between an input end Rf in and an output end RF out , wherein the input ends of the first-stage common source amplifier and the second-stage common source amplifier are connected with a direct-current power supply VDD through a bias circuit, and the broadband low-noise amplifier is suitable for a 5G communication system, a millimeter wave radar and an ultra-wideband (UWB) receiver front-end module.

Inventors

  • YANG ZHEHUI
  • JIAO JIAO
  • LI GUANGXIN
  • DENG HUA
  • YAO NA

Assignees

  • 杨哲辉

Dates

Publication Date
20260505
Application Date
20250530

Claims (7)

  1. 1. A broadband low-noise amplifier is characterized by comprising a first-stage common-source amplifier and a second-stage common-source amplifier which are sequentially connected between an input end Rf in and an output end RF out , wherein the input ends of the first-stage common-source amplifier and the second-stage common-source amplifier are connected with a direct-current power supply VDD through a bias circuit.
  2. 2. The broadband low noise amplifier according to claim 1, wherein said first stage common source amplifier comprises a transistor M 1 , a resistor R 1 , a capacitor C 2 , a resistor R 2 , The gate of the transistor M 1 is connected with the input end Rf in and one end of the resistor R 1 respectively, the other end of the resistor R 1 is connected with one end of the capacitor C 2 , the other end of the capacitor C 2 is connected with the drain of the transistor M 1 , the source of the transistor M 1 is connected with one end of the capacitor C 3 and one end of the resistor R 2 respectively, the other end of the capacitor C 3 is grounded, the other end of the resistor R 2 is connected with one end of the inductor L 3 , and the other end of the inductor L3494 is grounded.
  3. 3. The broadband low noise amplifier according to claim 2, wherein an input inductor L 1 is connected between the gate of the transistor M 1 and the input terminal Rf in , and the common terminal of the input inductor L 1 and the gate of the transistor M 1 is connected to the bias circuit through a bias inductor L 2 , and the common terminal of the bias inductor L 2 and the bias circuit is grounded through a capacitor C 1 .
  4. 4. A broadband low noise amplifier according to claim 2 or 3, wherein the second stage common source amplifier comprises a transistor M 2 , a resistor R 3 , an inductor L 4 , a capacitor C 6 and a capacitor C 7 , wherein the gate of the transistor M 2 is connected to the drain of the transistor M 1 and one end of the resistor R 3 , the other end of the resistor R 3 is connected to the bias circuit and one end of the inductor L 4 , the other end of the inductor L 4 is connected to one end of the capacitor C 6 , the other end of the capacitor C 6 is connected to the source of the transistor M 2 , the drain of the transistor M 2 is connected to one end of the capacitor C 7 , and the other end of the capacitor C 7 is grounded.
  5. 5. The wideband low noise amplifier according to claim 4, wherein a capacitor C 4 is connected between the gate of the transistor M 2 and the drain of the transistor M 1 , the common terminal of the drain of the transistor M 2 and the capacitor C 7 is grounded sequentially through an inductor L 5 , an inductor L 6 and a capacitor C 5 , and the common terminal of the inductor L 6 and the capacitor C 5 is connected to the drain of the transistor M 1 and the common terminal of the capacitor C 4 .
  6. 6. The wideband low noise amplifier of claim 4, wherein the source of transistor M 2 is connected to output terminal RF out via output inductor L 8 and output capacitor C 8 in sequence, the common terminal of the source of transistor M 2 and output inductor L 8 is connected to the bias circuit via bias inductor L 7 , and the common terminal of bias inductor L 7 and bias circuit is grounded via capacitor C 10 .
  7. 7. The wideband low noise amplifier of claim 6, wherein the common terminal of the output inductor L 8 and the output capacitor C 8 is grounded through a capacitor C 9 .

Description

Broadband low noise amplifier Technical Field The utility model relates to the technical field of radio frequency integrated circuits, in particular to a broadband low-noise amplifier. Background The Low Noise Amplifier (LNA) is used as a core module of the radio frequency receiving front end, and the broadband performance, noise Factor (NF), temperature stability and energy efficiency ratio are key factors for restricting the sensitivity of the modern communication system (such as 5G, UWB and radar). In recent years, gaAs technology has become a preferred scheme for LNA design by virtue of high electron mobility and low noise characteristics, but the prior art still faces the following bottlenecks in terms of multi-performance co-optimization: 1. the contradiction between broadband matching and noise performance is that although the traditional distributed amplifier can realize the bandwidth of 1-12.5GHz, the Noise Factor (NF) is deteriorated to more than 1.8dB, and the problem of abrupt low-frequency band gain drop is outstanding. Although the resistive feedback structure (e.g., the multiple resistive feedback MRFB technology) can control the chip area, NF deteriorates to more than 1.5dB, and linearity (OIP 3<23 dBm) is insufficient. 2. The temperature stability is insufficient, the gain fluctuation of the existing industrial-level scheme exceeds +/-3 dB in the temperature range of-40 ℃ to 85 ℃, and the severe requirement of the radar system on the gain consistency is difficult to meet. 3. Linearity in bypass mode deteriorates, the gain drops by 1.5dB when the output power increases to 10dBm, resulting in significant harmonic distortion, affecting the system dynamic range. The isolation in the direct mode is insufficient, so that signal leakage is easy to occur, and link self-excitation or stray interference is caused. 4. The power consumption and the energy efficiency ratio are limited, namely the quiescent current of the multistage amplification architecture is generally higher than 50mA@5V, the quiescent current does not accord with the green communication standard, and the energy efficiency ratio is only 5.8mW/dB. Disclosure of utility model In order to solve the problems in the prior art, the utility model aims to provide a broadband low-noise amplifier which is suitable for a 5G communication system, a millimeter wave radar and an Ultra Wideband (UWB) receiver front-end module. The broadband low-noise amplifier comprises a first-stage common-source amplifier and a second-stage common-source amplifier which are sequentially connected between an input end Rf in and an output end RF out, wherein the input ends of the first-stage common-source amplifier and the second-stage common-source amplifier are connected with a direct-current power supply VDD through bias circuits. As a further improvement of the utility model, the first stage common source amplifier comprises a transistor M 1, a resistor R 1, a capacitor C 2, a resistor R 2, The gate of the transistor M 1 is connected with the input end Rf in and one end of the resistor R 1 respectively, the other end of the resistor R 1 is connected with one end of the capacitor C 2, the other end of the capacitor C 2 is connected with the drain of the transistor M 1, the source of the transistor M 1 is connected with one end of the capacitor C 3 and one end of the resistor R 2 respectively, the other end of the capacitor C 3 is grounded, the other end of the resistor R 2 is connected with one end of the inductor L 3, and the other end of the inductor L3494 is grounded. As a further improvement of the present utility model, an input inductor L 1 is connected between the gate of the transistor M 1 and the input terminal Rf in, and the common terminal between the input inductor L 1 and the gate of the transistor M 1 is connected to the bias circuit through a bias inductor L 2, and the common terminal between the bias inductor L 2 and the bias circuit is grounded through a capacitor C 1. As a further improvement of the present utility model, the second-stage common source amplifier includes a transistor M 2, a resistor R 3, an inductor L 4, a capacitor C 6, and a capacitor C 7, where a gate of the transistor M 2 is connected to a drain of the transistor M 1 and one end of the resistor R 3, another end of the resistor R 3 is connected to a bias circuit and one end of the inductor L 4, another end of the inductor L 4 is connected to one end of the capacitor C 6, another end of the capacitor C 6 is connected to a source of the transistor M 2, a drain of the transistor M 2 is connected to one end of the capacitor C 7, and another end of the capacitor C 7 is grounded. As a further improvement of the present utility model, a capacitor C 4 is connected between the gate of the transistor M 2 and the drain of the transistor M 1, the common terminal of the drain of the transistor M 2 and the capacitor C 7 is grounded sequentially through an inductor L 5, an inductor L 6 a