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CN-224205522-U - Built-in distributed current sampling enhanced GaN power device structure

CN224205522UCN 224205522 UCN224205522 UCN 224205522UCN-224205522-U

Abstract

The utility model relates to the technical field, in particular to an enhanced GaN power device structure with built-in distributed current sampling, which is provided with a built-in distributed current sampling tube, the grid electrode and the drain electrode are shared by the distributed sampling tube and the main tube core of the GaN power device, and the current value of the main tube core of the GaN power device can be accurately calculated through the current ratio of the distributed sampling tube to the main tube core of the GaN power device and the current of the distributed sampling tube. Therefore, the current of the distributed sampling tube can be monitored to realize real-time monitoring of the current of the GaN power device, and the current signal output by the distributed sampling tube can be used as an input signal of a protection circuit for overcurrent protection and the like to realize the safety operation of the GaN power device such as overcurrent protection and the like. The device adopts the PGaN structure to realize enhancement, and the design of the non-active area is added at the horizontal position corresponding to the disconnection area, so that the sampling precision of the sampling tube is further improved.

Inventors

  • LIU YONG
  • LUO PENG
  • LIU JIACAI

Assignees

  • 成都氮矽科技有限公司
  • 南京氮矽科技有限公司

Dates

Publication Date
20260505
Application Date
20250410

Claims (8)

  1. 1. An enhanced GaN power device structure with built-in distributed current sampling, comprising a first interconnection metal (11) used as a main die source pad, a sampling tube source interconnection metal (9), a gate interconnection metal (8) used as a sampling tube and a main die gate metal (1) interconnection, and a second interconnection metal (15) used as a drain pad, wherein the gate interconnection metal (8) is arranged adjacent to the first interconnection metal (11) in a crossing way, one end of the sampling tube source interconnection metal (9) is connected with a fourth interconnection metal (14) used as a sampling tube source pad, and one end of the gate interconnection metal (8) is connected with a third interconnection metal (12) used as a gate pad; the semiconductor device further comprises an active region (16), wherein the active region (16) comprises a plurality of groups of gate units, the gate units are located between the first interconnection metal (11) and the second interconnection metal (15), the semiconductor device further comprises a main die source ohmic metal (4) and a sampling tube source ohmic metal (10), a first non-active region (17) is formed between the main die source ohmic metal (4) and the sampling tube source ohmic metal (10), and a second non-active region (13) is formed between the second interconnection metal (15) and the gate units.
  2. 2. An enhanced GaN power device structure with built-in distributed current sampling according to claim 1, characterized in that said gate cell comprises PGaN (3) and a gate metal (1), a main pipe core gate opening (2) and a sampling pipe gate opening (18) are arranged between said PGaN (3) and said gate metal (1), said gate metal (1) and said gate interconnect metal (8) are connected by a first via.
  3. 3. The built-in distributed current sampling enhancement mode GaN power device structure of claim 1, further comprising a fifth interconnect metal (5), said fifth interconnect metal (5) being connected to said main die source ohmic metal (4) through a second via (19), said fifth interconnect metal (5) being connected to said first interconnect metal (11) through a third via (20).
  4. 4. An enhanced GaN power device structure with built-in distributed current sampling according to claim 1, characterized in that said sampling tube source ohmic metal (10) is connected to said sampling tube source interconnect metal (9) through a fourth via (23).
  5. 5. The built-in distributed current sampling enhancement mode GaN power device structure of claim 1, further comprising a sixth interconnect metal (6) and a drain ohmic metal (7), said sixth interconnect metal (6) being connected to said drain ohmic metal (7) by a fifth via (21), said sixth interconnect metal (6) being connected to said second interconnect metal (15) by a sixth via (22).
  6. 6. An enhanced GaN power device structure with built-in distributed current sampling according to claim 1, characterized in that one end of said sampling tube source interconnect metal (9) is connected to a fourth interconnect metal (14) through a seventh via.
  7. 7. An enhanced GaN power device structure with built-in distributed current sampling according to claim 1, characterized in that one end of said gate interconnect metal (8) is connected to a third interconnect metal (12) through an eighth via.
  8. 8. The built-in distributed current sampling enhancement mode GaN power device architecture of claim 1, wherein said gate units are provided in groups.

Description

Built-in distributed current sampling enhanced GaN power device structure Technical Field The utility model relates to the technical field, in particular to an enhanced GaN power device structure with built-in distributed current sampling. Background Gallium nitride (GaN) is one of the representatives of the third generation of semiconductor materials, with a higher forbidden bandwidth. Due to the advantage of the wide forbidden band, gaN materials have higher critical breakdown field strength than conventional Si materials. GaN materials have higher thermal conductivity than Si and are therefore more suitable for extreme environmental applications such as high temperature. In addition, gaN can also form Al GaN/GaN heterojunction with AlGaN, and spontaneous polarization and piezoelectric polarization effects cause high concentration two-dimensional electron gas (2 DEG) to form at the AlGaN/GaN heterojunction interface. In practical application, gaN power devices are continuously switched, and the current flowing through the devices is continuously changed, and especially if the current is too large in the starting process, the risks of heating, degradation of the device characteristics and burning of the devices are caused. In order to ensure the safe operation of the device and the safety of the power loop, the source leakage current of the GaN power device needs to be monitored to determine the operation state of the device and fed back to the driver or the controller, for example, when the device is turned on, the excessive current can adjust the driving signal to perform the operation of reducing the frequency or the driving voltage. The most common monitoring method is to connect a sampling resistor in series under the source electrode of the GaN power device and monitor the voltage change of the resistor to realize the real-time monitoring of the current of the GaN power device. However, this series resistance creates additional power loss, resulting in reduced efficiency of the overall power system. Disclosure of utility model The utility model aims to provide an enhanced GaN power device structure with built-in distributed current sampling, which solves the problem of power loss in the prior art. The utility model is realized by the following technical scheme: An enhanced GaN power device structure with built-in distributed current sampling comprises a first interconnection metal used as a main die source pad, a sampling tube source interconnection metal, a grid interconnection metal used as a sampling tube and a main die grid metal interconnection and a second interconnection metal used as a drain pad, wherein the grid interconnection metal is arranged adjacent to the first interconnection metal in a crossing way, one end of the sampling tube source interconnection metal is connected with a fourth interconnection metal used as the sampling tube source pad, and one end of the grid interconnection metal is connected with a third interconnection metal used as the grid pad; the active region comprises a plurality of groups of grid units, the grid units are positioned between the first interconnection metal and the second interconnection metal, the active region further comprises a main tube core source ohmic metal and a sampling tube source ohmic metal, a first non-active region is formed between the main tube core source ohmic metal and the sampling tube source ohmic metal, and a second non-active region is formed between the second interconnection metal and the grid units. Preferably, the gate unit includes PGaN and a gate metal, a main core gate opening and a sampling tube gate opening are disposed between the PGaN and the gate metal, and the gate metal and the gate interconnection metal are connected through a first via. Preferably, the semiconductor device further comprises a fifth interconnection metal, wherein the fifth interconnection metal is connected with the main pipe core source ohmic metal through a second through hole, and the fifth interconnection metal is connected with the first interconnection metal through a third through hole. Preferably, the sampling tube source ohmic metal is connected to the sampling tube source interconnection metal through a fourth via. Preferably, the semiconductor device further comprises a sixth interconnection metal and a drain ohmic metal, wherein the sixth interconnection metal is connected with the drain ohmic metal through a fifth through hole, and the sixth interconnection metal is connected with the second interconnection metal through a sixth through hole. Preferably, one end of the sampling tube source interconnection metal is connected with the fourth interconnection metal through a seventh through hole. Preferably, one end of the gate interconnection metal is connected to the third interconnection metal through an eighth via hole. Preferably, the gate units are provided with a plurality of groups. The technical scheme of the utility model has at