CN-224205523-U - Semiconductor device, power module, power conversion circuit, and vehicle

CN224205523UCN 224205523 UCN224205523 UCN 224205523UCN-224205523-U

Abstract

The utility model discloses a semiconductor device, a power module, a power conversion circuit and a vehicle. The semiconductor device comprises a semiconductor body, a source electrode groove structure, an interlayer insulating layer, an ohmic contact layer, a covering layer insulating layer and a part of first surface, wherein the semiconductor body comprises a first surface and a second surface which are oppositely arranged, the first surface is further provided with the source electrode groove, the source electrode groove extends into the semiconductor body from the first surface, the source electrode groove structure is positioned inside the source electrode groove and comprises a first insulating layer positioned on the inner wall of the source electrode groove and a filling layer positioned on one side of the first insulating layer far away from the source electrode groove, the interlayer insulating layer is positioned on the first surface of the semiconductor body and comprises a first sub-interlayer insulating layer, the first sub-interlayer insulating layer covers the source electrode groove structure and is arranged in one-to-one correspondence with the source electrode groove structure, and the ohmic contact layer is positioned on one side of the interlayer insulating layer far away from the semiconductor body and covers the interlayer insulating layer and the part of the first surface. The embodiment of the utility model can avoid the excessive etching of the source electrode groove structure, and is beneficial to improving the electrical property and reliability of the semiconductor device.

Inventors

TANG YUKUN
LUO CHENGZHI

Assignees

安徽长飞先进半导体股份有限公司

Dates

Publication Date: 20260505
Application Date: 20250515

Claims (10)

1. A semiconductor device, comprising: A semiconductor body comprising oppositely disposed first and second surfaces, the first surface further provided with a source trench extending from the first surface into the semiconductor body; The source electrode groove structure is positioned in the source electrode groove and comprises a first insulating layer positioned on the inner wall of the source electrode groove and a filling layer positioned on one side of the first insulating layer away from the source electrode groove; The interlayer insulating layer is positioned on the first surface of the semiconductor body, comprises a first sub-interlayer insulating layer, and covers the source electrode groove structures and is arranged in one-to-one correspondence with the source electrode groove structures; And the ohmic contact layer is positioned on one side of the interlayer insulating layer away from the semiconductor body and covers the interlayer insulating layer and part of the first surface.
2. The semiconductor device of claim 1, wherein the semiconductor body further comprises a well region and a first region, the first region being of a first conductivity type and located at the first surface, the well region being of a second conductivity type and located on a side of the first region remote from the first surface, the first conductivity type and the second conductivity type being different; And a second region of the second conductivity type at a bottom and a sidewall of the source trench.
3. The semiconductor device according to claim 2, wherein a width of the first sub-interlayer insulating layer is greater than or equal to a width of the source trench structure in a direction perpendicular to the first surface to the second surface, and the width of the first sub-interlayer insulating layer is less than a sum of the widths of the source trench structure and the second region.
4. The semiconductor device according to claim 3, wherein, At least a portion of the second region is in contact with the ohmic contact layer at the first surface.
5. The semiconductor device of claim 1, wherein the material of the ohmic contact layer comprises nickel or aluminum.
6. The semiconductor device according to claim 1, wherein the first surface is further provided with a gate trench extending from the first surface into the semiconductor body; The semiconductor device further comprises a gate structure, wherein the gate structure is positioned in the gate groove and comprises a second insulating layer positioned on the inner wall of the gate groove and a gate positioned on one side of the second insulating layer away from the gate groove; The interlayer insulating layer further comprises a second sub interlayer insulating layer, the second sub interlayer insulating layer and the first sub interlayer insulating layer are arranged on the same layer, and the second sub interlayer insulating layer covers the grid structure and is arranged in one-to-one correspondence with the grid structure.
7. The semiconductor device according to claim 6, further comprising: A source electrode located at one side of the ohmic contact layer away from the interlayer insulating layer; And the drain electrode is positioned on the second surface of the semiconductor body.
8. A power module, comprising: at least one semiconductor device according to any one of claims 1 to 7; and the substrate is used for bearing the semiconductor device.
9. A power conversion circuit for one or more of current conversion, voltage conversion, and power factor correction; the power conversion circuit comprises a circuit board and at least one semiconductor device according to any one of claims 1 to 7, wherein the semiconductor device is electrically connected with the circuit board.
10. A vehicle comprising a load and the power conversion circuit according to claim 9, wherein the power conversion circuit is configured to convert alternating current into direct current, alternating current into alternating current, direct current into direct current, or direct current into alternating current, and then input the alternating current into the load.

Description

Semiconductor device, power module, power conversion circuit, and vehicle Technical Field The present utility model relates to the field of semiconductor technologies, and in particular, to a semiconductor device, a power module, a power conversion circuit, and a vehicle. Background A metal oxide semiconductor field effect Transistor (Metal Oxide Semiconductor FIELD EFFECT Transistor, MOSFET) with a silicon carbide (SiC) trench gate structure has the advantages of large current density, small cell spacing, high switching speed and the like, and becomes a main research object of a new generation of SiC MOSFETs. For a MOSFET structure of SiC double or multiple trenches, when an insulating layer corresponding to a trench type gate structure is prepared, excessive etching may occur to the structure in the source trench, resulting in an influence on the electrical performance and reliability of the semiconductor device. Disclosure of utility model The utility model provides a semiconductor device, a power module, a power conversion circuit and a vehicle, which are used for solving the problem that the electrical performance and reliability of the semiconductor device are affected by the damaged structure in a source electrode groove. In a first aspect, there is provided a semiconductor device comprising: A semiconductor body comprising oppositely disposed first and second surfaces, the first surface further provided with a source trench extending from the first surface into the semiconductor body; The source electrode groove structure is positioned in the source electrode groove and comprises a first insulating layer positioned on the inner wall of the source electrode groove and a filling layer positioned on one side of the first insulating layer away from the source electrode groove; The interlayer insulating layer is positioned on the first surface of the semiconductor body, comprises a first sub-interlayer insulating layer, and covers the source electrode groove structures and is arranged in one-to-one correspondence with the source electrode groove structures; And the ohmic contact layer is positioned on one side of the interlayer insulating layer away from the semiconductor body and covers the interlayer insulating layer and part of the first surface. Optionally, the semiconductor body further comprises a well region and a first region, wherein the first region is of a first conductivity type and is positioned on the first surface, the well region is of a second conductivity type and is positioned on one side of the first region away from the first surface, and the first conductivity type and the second conductivity type are different; And a second region of the second conductivity type at a bottom and a sidewall of the source trench. Optionally, in a direction perpendicular to the first surface to the second surface, a width of the first sub-interlayer insulating layer is greater than or equal to a width of the source trench structure, and a width of the first sub-interlayer insulating layer is less than a sum of a width of the source trench structure and a width of the second region. Optionally, at least a portion of the second region is in contact with the ohmic contact layer at the first surface. Optionally, the material of the ohmic contact layer includes nickel or aluminum. Optionally, the first surface is further provided with a gate trench extending from the first surface into the semiconductor body; The semiconductor device further comprises a gate structure, wherein the gate structure is positioned in the gate groove and comprises a second insulating layer positioned on the inner wall of the gate groove and a gate positioned on one side of the second insulating layer away from the gate groove; The interlayer insulating layer further comprises a second sub interlayer insulating layer, the second sub interlayer insulating layer and the first sub interlayer insulating layer are arranged on the same layer, and the second sub interlayer insulating layer covers the grid structure and is arranged in one-to-one correspondence with the grid structure. Optionally, the semiconductor device further includes: A source electrode located at one side of the ohmic contact layer away from the interlayer insulating layer; And the drain electrode is positioned on the second surface of the semiconductor body. In a second aspect, there is provided a power module comprising: At least one semiconductor device as in any embodiment of the first aspect; and the substrate is used for bearing the semiconductor device. In a third aspect, a power conversion circuit is provided for one or more of current conversion, voltage conversion, power factor correction; The power conversion circuit comprises a circuit board and at least one semiconductor device as described in any of the embodiments of the first aspect, the semiconductor device being electrically connected to the circuit board. In a fourth aspect, there is provided a veh