CN-224205543-U - Solar cell and photovoltaic module

Abstract

The application discloses a solar cell and a photovoltaic module, wherein the solar cell comprises a cell body, a plurality of thin grid electrodes which are arranged at intervals along a first direction and a plurality of main grid electrodes which are arranged at intervals along a second direction are arranged on the cell body, the conduction types of two adjacent thin grid electrodes are opposite, the conduction types of two adjacent main grid electrodes are opposite, the thin grid electrodes with opposite conduction types and the main grid electrodes are provided with first junctions, the thin grid electrodes are disconnected at the junctions to form a plurality of sub-electrodes which are arranged intermittently, a first gap is arranged between the end parts of the sub-electrodes and the main grid electrodes, a conductive layer is arranged between the thin grid electrodes and the cell body, and the thin grid electrodes are electrically connected with the cell body through the conductive layer. Therefore, the main gate electrode and the thin gate electrode are conveniently processed and obtained in a one-step processing and molding mode, and the method is beneficial to simplifying the process flow and reducing the production cost.

Inventors

• GU JIAHAO
• XU XIXIANG
• FANG LIANG
• HE BO
• TANG QING

Assignees

• 隆基绿能科技股份有限公司西咸新区分公司

Dates

Publication Date

20260505

Application Date

20250331

Claims (16)

1. 1. The solar cell is characterized by comprising a cell body, wherein the cell body is provided with a first direction and a second direction which are intersected, a plurality of thin gate electrodes which are arranged at intervals along the first direction and a plurality of main gate electrodes which are arranged at intervals along the second direction are arranged on the cell body, wherein the conduction types of two adjacent thin gate electrodes are opposite, and the conduction types of two adjacent main gate electrodes are opposite; the thin gate electrode and the main gate electrode with opposite conductivity types are provided with a first junction, the thin gate electrode is disconnected at the first junction to form a plurality of sub-electrodes which are arranged intermittently, a first gap is arranged between the end part of each sub-electrode and the main gate electrode, a conductive layer is arranged between the thin gate electrode and the battery body, and the thin gate electrode is electrically connected with the battery body through the conductive layer.
2. 2. The solar cell of claim 1, wherein the cell body comprises a silicon substrate and a doped semiconductor layer formed on the silicon substrate; the doped semiconductor layer is covered with the conductive layer, and the main gate electrode and the thin gate electrode are both arranged on the conductive layer; Or the doped semiconductor layer is also covered with a dielectric layer, a plurality of through holes are formed in the dielectric layer so as to expose the doped semiconductor layer in the corresponding area, the conductive layer is arranged in the through holes, and the thin gate electrode at least partially stretches into the through holes and is electrically connected with the doped semiconductor layer through the conductive layer.
3. 3. The solar cell of claim 1, wherein the conductive layer comprises a transparent conductive layer or a base metal layer.
4. 4. The solar cell according to claim 1, wherein the thin gate electrode and the main gate electrode which are the same in conductivity type have a second intersection, and the thin gate electrode and the main gate electrode form an integrally formed structure at the second intersection, and a thickness of the integrally formed structure is equal to or greater than a thickness of the thin gate electrode.
5. 5. The solar cell according to claim 1, wherein an insulating layer is provided between the main gate electrode and the cell body at the first junction, and a second gap is provided between an end of the sub-electrode and the corresponding insulating layer.
6. 6. The solar cell according to claim 5, wherein the width of the second gap in the second direction is W2, and W2 is not less than 15 μm.
7. 7. The solar cell according to claim 5, wherein the cell body is further provided with a conductive connection layer at the first junction, two adjacent sub-electrodes are electrically connected through the conductive connection layer, the insulating layer is disposed between the conductive connection layer and the main gate electrode, the sub-electrodes include a main body portion and a lap portion, which are connected to each other, the main body portion is electrically connected to the cell body, and the lap portion extends onto the conductive connection layer and forms an electrical connection with the conductive connection layer.
8. 8. The solar cell of claim 7, wherein the tab extends to cover a side of the conductive connection layer facing away from the cell body to form a tab with the conductive connection layer.
9. 9. The solar cell according to claim 7, wherein an edge of the conductive connection layer in the second direction is provided with an opening, and the overlap is at least partially embedded in the opening.
10. 10. The solar cell according to claim 7, wherein the thickness of the lap portion is h2 and the thickness of the body portion is h1, satisfying 0.8≤h2/h 1≤1.
11. 11. The solar cell according to claim 10, wherein the thickness h1 of the body portion ranges from 5 μm to 35 μm.
12. 12. The solar cell according to claim 7, wherein the length of the lap joint part in the second direction is W1, and W1 is not less than 25 μm.
13. 13. The solar cell according to claim 7, wherein the length L1 of the conductive connection layer and the length L2 of the insulating layer in the second direction satisfy 0.5≤L2/L1≤0.9 and/or L1-L2≤80 μm.
14. 14. The solar cell according to any one of claims 7-13, wherein the solar cell fulfils at least one of the following conditions: A. The length of the insulating layer along the second direction is L2, the width of the main gate electrode along the second direction is L3, and the condition that L3/L2 is more than or equal to 0.3 is satisfied; B. the thickness of the conductive connecting layer ranges from 1 mu m to 10 mu m; C. the thickness of the insulating layer ranges from 1 mu m to 30 mu m; D. The orthographic projection shape of the conductive connecting layer on the battery body is one or more than two of a circle, an ellipse and a polygon.
15. 15. The solar cell according to any one of claims 1-13, wherein the solar cell fulfils at least one of the following conditions: E. the thickness of the main gate electrode ranges from 3 mu m to 35 mu m; F. the thin gate electrode and the main gate electrode are made of the same material, and the material comprises copper; G. The width of the first gap along the second direction is W3, and the width of the first gap along the second direction is W3 which is more than or equal to 0.01mm and less than or equal to 3mm.
16. 16. A photovoltaic module comprising a plurality of cell strings comprising a plurality of solar cells and a plurality of interconnects for connecting a plurality of the solar cells together in series; Wherein the solar cell is the solar cell of any one of claims 1-15.

Description

Solar cell and photovoltaic module Technical Field The application belongs to the technical field of photovoltaics, and particularly relates to a solar cell and a photovoltaic module. Background The solar cell is a device for directly converting light energy into electric energy, and along with the continuous development of photovoltaic technology, the back contact solar cell can avoid shielding of the grid line on the front surface of the cell because electrodes of the back contact solar cell are arranged on the back surface of the cell, so that the conversion efficiency of the solar cell is improved, and the back contact solar cell is widely applied and focused. In the back contact solar cell of the related art, the electrode includes a fine gate and a main gate, the fine gate is used for collecting carriers generated by the cell body, and the conventional high temperature metallization process is performed by sintering high temperature silver paste on a dielectric layer such as silicon nitride, so that the paste penetrates through a silicon nitride interface to form good metal contact with an underlying semiconductor layer. The main grid is used for collecting carriers of the fine grid and providing pulling force for the welding strip, and the silicon nitride interface does not need to be burnt. When the electrode is prepared, the thin grids are printed on the first conductive area and the second conductive area on the back of the solar cell to be sintered, and then the main grid is printed to be dried. However, with the solar cell structure of the related art, the process flow is complicated and the production cost of the high temperature silver paste is high. Disclosure of Invention The application aims to provide a solar cell and a photovoltaic module, which can solve the problems of complex process flow and high production cost of a solar cell structure adopting related technologies. In order to solve the technical problems, the application is realized as follows: The embodiment of the application provides a solar cell, which comprises a cell body, wherein the cell body is provided with a first direction and a second direction which are intersected, a plurality of thin gate electrodes which are arranged at intervals along the first direction and a plurality of main gate electrodes which are arranged at intervals along the second direction are arranged on the cell body, wherein the conduction types of two adjacent thin gate electrodes are opposite, and the conduction types of two adjacent main gate electrodes are opposite; the thin gate electrode and the main gate electrode with opposite conductivity types are provided with a first junction, the thin gate electrode is disconnected at the first junction to form a plurality of sub-electrodes which are arranged intermittently, a first gap is arranged between the end part of each sub-electrode and the main gate electrode, a conductive layer is arranged between the thin gate electrode and the battery body, and the thin gate electrode is electrically connected with the battery body through the conductive layer. Optionally, the battery body includes a silicon substrate and a doped semiconductor layer formed on the silicon substrate; the doped semiconductor layer is covered with the conductive layer, and the main gate electrode and the thin gate electrode are both arranged on the conductive layer; Or the doped semiconductor layer is also covered with a dielectric layer, a plurality of through holes are formed in the dielectric layer so as to expose the doped semiconductor layer in the corresponding area, the conductive layer is arranged in the through holes, and the thin gate electrode at least partially stretches into the through holes and is electrically connected with the doped semiconductor layer through the conductive layer. Optionally, the conductive layer comprises a transparent conductive layer or a base metal layer. Optionally, the thin gate electrode and the main gate electrode with the same conductivity type have a second junction, and the thin gate electrode and the main gate electrode form an integrally formed structure at the second junction, and the thickness of the integrally formed structure is greater than or equal to the thickness of the thin gate electrode. Optionally, an insulating layer is disposed between the main gate electrode and the battery body at the first junction, and a second gap is formed between the end of the sub-electrode and the corresponding insulating layer. Optionally, the width of the second gap along the second direction is W2, and W2 is more than or equal to 15 mu m. Optionally, a conductive connection layer is further disposed at the first junction on the battery body, two adjacent sub-electrodes are electrically connected through the conductive connection layer, the insulating layer is disposed between the conductive connection layer and the main gate electrode, the sub-electrodes include a main body portion and a