CN-224205550-U - Vertical structure LED chip for display screen

CN224205550UCN 224205550 UCN224205550 UCN 224205550UCN-224205550-U

Abstract

The utility model discloses a vertical structure LED chip for a display screen, which relates to the technical field of semiconductors, wherein the cross section of a chip body is of a square structure, the length range of the side of the chip body is 100-500 mu m, the square structure is averagely divided into four areas anticlockwise according to a Chinese character 'Tian', a P electrode column is positioned in a third area, at most one N-type conductive column is arranged in any one of the first area, the second area and the fourth area, the conductive columns are uniformly distributed in the first area, the second area and the fourth area, the diameter range of the conductive columns is 1-50 mu m, and the distance range of adjacent conductive columns is 10-100 mu m. According to the utility model, the chip area with the square structure is uniformly divided according to the shape of the Chinese character 'tian', and the P electrode columns, the N conductive columns and the conductive small columns are reasonably arranged, so that the uniformity of current distribution in the LED chip with the small-size vertical structure can be effectively improved, the aggravated thermal effect is avoided, and the luminous efficiency is ensured.

Inventors

CHEN HUIQIU
ZHOU XIN
YU QIANQIAN
KUANG MINGSHENG
Fan Mincong

Assignees

佛山市国星半导体技术有限公司

Dates

Publication Date: 20260505
Application Date: 20250429

Claims (10)

1. The LED chip with the vertical structure for the display screen is characterized by comprising a chip body, wherein 1P electrode column, at least 1N type conductive column and a plurality of conductive small columns are arranged in the chip body, the cross section of the chip body is of a square structure, and the length range of the side length of the square structure is 100-500 mu m; The square structure is divided into a first area, a second area, a third area and a fourth area according to the anticlockwise average distribution of the Chinese character 'Tian', the P electrode column is positioned in the third area, at most one N-type conductive column is arranged in any one of the first area, the second area and the fourth area, a plurality of conductive small columns are uniformly distributed in the first area, the second area and the fourth area, the diameter range of any conductive small column is 1-50 mu m, and the interval range between adjacent conductive small columns is 10-100 mu m.
2. The LED chip of claim 1, wherein the chip body comprises, from bottom to top, an N-electrode layer, a conductive substrate, a bonding metal layer, a first passivation layer, a metal barrier layer, a metal reflective layer, a second passivation layer, a transparent conductive layer, a P-type GaN layer, an MQW light-emitting layer, an N-type GaN layer, a U-type GaN layer, and a third passivation layer; Forming at least 1N-type conductive column in the N-type GaN layer by extending the bonding metal layer, forming a first passivation sleeve by extending the first passivation layer to cover the side wall of the N-type conductive column, and forming a second passivation sleeve by extending the second passivation layer to cover the side wall of the first passivation sleeve; The metal reflecting layer extends through the second passivation layer to form a plurality of conductive pillars, and the upper end of any conductive pillar contacts the transparent conductive layer; the chip body is internally provided with 1P-type conductive window, the P-type conductive window extends from the surface of the third passivation layer to the metal barrier layer, the metal barrier layer of the P-type conductive window is provided with the P electrode column, and the periphery of the P electrode column is provided with an electrode passivation sleeve.
3. The LED chip of claim 2, wherein the metal barrier extends over the exposed sidewall of the metal reflective layer to form a first barrier cap, wherein a side of the first barrier cap is contiguous with a side of the first passivation cap, and wherein an upper end of the first barrier cap is contiguous with the second passivation layer.
4. The LED chip of claim 2, wherein the metal reflective layer comprises a thin layer of TiW and a thin layer of Ag disposed in sequence from bottom to top, the thin layer of Ag extending through the second passivation layer to form a plurality of the conductive pillars.
5. The LED chip of claim 2, wherein a first frame-shaped trench is formed in the chip body, the first frame-shaped trench extends from the surface of the U-shaped GaN layer to the surface of the second passivation layer, the first frame-shaped trench is communicated with the P-type conductive window, and the P-electrode pillar, the N-type conductive pillar and the conductive pillar are all located in an inner peripheral region of the first frame-shaped trench; and the transparent conducting layer, the P-type GaN layer, the MQW luminescent layer, the N-type GaN layer and the U-type GaN layer at the periphery of the first frame-shaped groove are used as retaining wall structures, and the third passivation layer extends to fill the first frame-shaped groove.
6. The LED chip of claim 5, wherein the sidewall of the first frame-shaped groove has an inclination angle ranging from 10 ° to 30 °.
7. The LED chip of claim 5, wherein the wall structure is provided with a frame-shaped reflective wall or a frame-shaped light absorbing wall around the periphery thereof, and the third passivation layer extends to cover the top of the frame-shaped reflective wall or the top of the frame-shaped light absorbing wall.
8. The LED chip of claim 5, wherein the wall structure comprises a frame-shaped inner wall and a frame-shaped outer wall disposed at intervals, and a frame-shaped reflecting wall or a frame-shaped absorbing wall is disposed between the frame-shaped inner wall and the frame-shaped outer wall.
9. The LED chip of claim 5, wherein the third passivation layer on top of the barrier wall structure is raised to form a wall structure.
10. The LED chip of claim 2, wherein the P electrode pillar has a thickness ranging from 0.5 to 1.5 μm, the N electrode layer has a thickness ranging from 0.5 to 1 μm, the first passivation layer has a thickness ranging from 300 to 1500nm, the second passivation layer has a thickness ranging from 50 to 500nm, the transparent conductive layer has a thickness ranging from 10 to 20nm, and the third passivation layer has a thickness ranging from 10 to 100nm.

Description

Vertical structure LED chip for display screen Technical Field The utility model relates to the technical field of semiconductors, in particular to a vertical structure LED chip for a display screen. Background With the rapid development of display technology, LED chips are widely used in display screens due to their advantages of high brightness, high reliability, low power consumption, and the like. Compared with the LED chip with the normal structure, the LED chip with the vertical structure has better heat radiation performance and higher luminous efficiency, and therefore has obvious technical advantages in the display field. However, along with the development of the chip size toward the miniaturization direction, how to realize efficient arrangement of the P electrode and the conductive structures (the N-type conductive pillars and the conductive small pillars) inside the chip in the limited area of the LED chip with the vertical structure becomes a technical difficulty, especially in the small-size chip with the side length smaller than 1000 micrometers, the spatial arrangement of the P electrode, the N-type conductive pillars and the conductive small pillars is not reasonable enough, the uniformity of current distribution is easy to be affected, and not only the thermal effect of the LED chip with the small-size vertical structure is aggravated, but also the luminous efficiency of the LED chip with the small-size vertical structure is reduced. Disclosure of utility model The utility model aims to overcome the defects of the prior art, provides a vertical structure LED chip for a display screen, which is characterized in that the chip area of a square structure is uniformly divided according to the shape of a Chinese character 'tian', and the P electrode column, the N conductive column and the conductive small column are reasonably arranged, so that the uniformity of current distribution in the small-size vertical structure LED chip can be effectively improved, the aggravated thermal effect is avoided, and the luminous efficiency is ensured. The utility model provides a vertical structure LED chip for a display screen, which comprises a chip body, wherein 1P electrode column, at least 1N type conductive column and a plurality of conductive small columns are arranged in the chip body, the cross section of the chip body is of a square structure, and the length range of the side length of the square structure is 100-500 mu m; The square structure is divided into a first area, a second area, a third area and a fourth area according to the anticlockwise average distribution of the Chinese character 'Tian', the P electrode column is positioned in the third area, at most one N-type conductive column is arranged in any one of the first area, the second area and the fourth area, a plurality of conductive small columns are uniformly distributed in the first area, the second area and the fourth area, the diameter range of any conductive small column is 1-50 mu m, and the interval range between adjacent conductive small columns is 10-100 mu m. Specifically, the chip body comprises an N electrode layer, a conductive substrate, a bonding metal layer, a first passivation layer, a metal barrier layer, a metal reflecting layer, a second passivation layer, a transparent conductive layer, a P-type GaN layer, an MQW light-emitting layer, an N-type GaN layer, a U-type GaN layer and a third passivation layer which are sequentially arranged from bottom to top; Forming at least 1N-type conductive column in the N-type GaN layer by extending the bonding metal layer, forming a first passivation sleeve by extending the first passivation layer to cover the side wall of the N-type conductive column, and forming a second passivation sleeve by extending the second passivation layer to cover the side wall of the first passivation sleeve; The metal reflecting layer extends through the second passivation layer to form a plurality of conductive pillars, and the upper end of any conductive pillar contacts the transparent conductive layer; the chip body is internally provided with 1P-type conductive window, the P-type conductive window extends from the surface of the third passivation layer to the metal barrier layer, the metal barrier layer of the P-type conductive window is provided with the P electrode column, and the periphery of the P electrode column is provided with an electrode passivation sleeve. Specifically, the metal barrier layer extends to cover the exposed side wall of the metal reflecting layer to form a first barrier sleeve, the side surface of the first barrier sleeve is connected with the side surface of the first passivation sleeve, and the upper end of the first barrier sleeve is connected with the second passivation layer. Specifically, the metal reflecting layer comprises a TiW thin layer and an Ag thin layer which are sequentially arranged from bottom to top, and the Ag thin layer extends through the second passi