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CN-224205562-U - Display panel and display device

CN224205562UCN 224205562 UCN224205562 UCN 224205562UCN-224205562-U

Abstract

The embodiment of the disclosure provides a display panel and a display device, relates to the technical field of display, and is used for improving the luminous efficiency of the display panel. The display panel comprises a plurality of light emitting devices, at least one light emitting device further comprises at least one of a hole buffer layer, an electron buffer layer, a hole enhancement layer and an electron enhancement layer, wherein the hole buffer layer is arranged between the hole transmission layer and the quantum dot light emitting layer of a first light emitting device emitting blue light and used for reducing the transmission speed of holes, the electron buffer layer is arranged between the quantum dot light emitting layer and the electron transmission layer of a second light emitting device emitting red light or green light and used for reducing the transmission speed of electrons, the hole enhancement layer is arranged between the hole transmission layer and the quantum dot light emitting layer of the second light emitting device and used for increasing the transmission speed of holes, and the electron enhancement layer is arranged between the quantum dot light emitting layer and the electron transmission layer of the first light emitting device and used for displaying images.

Inventors

  • ZHU YOUQIN

Assignees

  • 北京京东方技术开发有限公司
  • 京东方科技集团股份有限公司

Dates

Publication Date
20260505
Application Date
20250529

Claims (14)

  1. 1. A display panel, comprising: A substrate; The light emitting device comprises a substrate, a plurality of light emitting devices, a light emitting device and a light emitting device, wherein each light emitting device comprises oppositely arranged electrodes, a hole transmission layer, a quantum dot light emitting layer and an electron transmission layer, wherein the hole transmission layer, the quantum dot light emitting layer and the electron transmission layer are positioned between the oppositely arranged electrodes and sequentially overlapped; The light emitting device further comprises an additional functional layer, wherein the additional functional layer comprises at least one of a hole buffer layer, an electron buffer layer, a hole enhancement layer and an electron enhancement layer; The hole buffer layer is positioned between the hole transport layer and the quantum dot light emitting layer of the first light emitting device, the hole buffer layer is configured to reduce the transport speed of holes, the electron buffer layer is positioned between the quantum dot light emitting layer and the electron transport layer of the second light emitting device, the electron buffer layer is configured to reduce the transport speed of electrons, the hole enhancement layer is positioned between the hole transport layer and the quantum dot light emitting layer of the second light emitting device, the hole enhancement layer is configured to increase the transport speed of holes, the electron enhancement layer is positioned between the quantum dot light emitting layer and the electron transport layer of the first light emitting device, and the electron enhancement layer is configured to increase the transport speed of electrons.
  2. 2. The display panel according to claim 1, wherein the hole buffer layer is made of any one of polymethyl methacrylate, aluminum oxide, polyvinylpyrrolidone, poly [ (9, 9-di (3 '- (N, N-dimethylamino) propyl) fluorenyl-2, 7-diyl) -alt- [ (9, 9-di-N-octylfluorenyl-2, 7-diyl), polyethoxyethyleneimine, poly [ (9, 9-di (3' - (N, N-dimethylamino) propyl) fluorenyl-2, 7-diyl) -alt- [ (9, 9-di-N-octylfluorenyl 2, 7-diyl) -bromo ] and naphthalene diimide.
  3. 3. The display panel according to claim 1, wherein the material of the hole buffer layer comprises a first crosslinking material formed by crosslinking the first material with a photo-sensitive crosslinking agent through a hydrocarbon insertion reaction, and the first material comprises any one of polymethyl methacrylate, poly [ (9, 9-bis (3' - (N, N-dimethylamino) propyl) fluorenyl-2, 7-diyl) -alt- [ (9, 9-di-N-octylfluorenyl-2, 7-diyl), and polyvinylpyrrolidone.
  4. 4. The display panel according to claim 3, wherein the photosensitive cross-linking agent comprises any one of diazacyclopropene, triazene, sulfonyl azide, phenyl azide, perfluoroalkyl azide, ruthenium bipyridine and iridium complex.
  5. 5. The display panel of claim 1, wherein the hole buffer layer has a thickness in the range of 5nm to 8nm.
  6. 6. The display panel according to claim 1, wherein the material of the electron buffer layer comprises a second crosslinking material formed by crosslinking the second material with a photo-sensitive crosslinking agent through a hydrocarbon insertion reaction, the second material comprising any one of polymethyl methacrylate, polyvinylpyrrolidone, poly [ (9, 9-dioctylfluorene-2, 7-diyl) -co- (4, 4' - (N- (4-sec-butylphenyl) diphenylamine) ] and poly (9, 9-N-dioctyl-2, 7-fluorene-alt-9-isooctyl-3, 6-carbazole).
  7. 7. The display panel of claim 1, wherein the electron buffer layer has a thickness in the range of 5nm to 8nm.
  8. 8. The display panel according to claim 1, wherein the material of the hole-enhancing layer comprises a third crosslinking material formed by crosslinking the third material with a photo-sensitive crosslinking agent by a hydrocarbon insertion reaction, the third material comprising any one of polyvinylcarbazole, 4, -tris (carbazol-9-yl) triphenylamine, N ' -diphenyl-N, N ' - (1-naphthyl) -1,1' -biphenyl-4, 4' -diamine, and 4,4' -bis (N-carbazole) biphenyl.
  9. 9. The display panel of claim 1, wherein the hole enhancing layer has a thickness in the range of 8nm to 12nm.
  10. 10. The display panel according to claim 1, wherein the material of the electron enhancement layer comprises a fourth crosslinking material formed by crosslinking the fourth material with a photo-sensitive crosslinking agent through a hydrocarbon insertion reaction, the fourth material comprising any one of poly [ (9, 9-di (3 '- (N, N-dimethylamino) propyl) fluorenyl-2, 7-diyl) -alt- [ (9, 9-di-N-octylfluorenyl-2, 7-diyl), poly [ (9, 9-di (3' - (N, N-dimethylamino) propyl) fluorenyl-2, 7-diyl) -alt- [ (9, 9-di-N-octylfluorenyl 2, 7-diyl) -bromo ] and polyethoxyethyleneimine.
  11. 11. The display panel of claim 1, wherein the electron enhancement layer has a thickness in the range of 3nm to 5nm.
  12. 12. The display panel according to claim 1, wherein a surface of the electrode of the first light emitting device on a side away from the substrate is not flush with a surface of the electrode of the second light emitting device on a side away from the substrate.
  13. 13. The display panel of claim 12, wherein a distance between a surface of the electrode of the first light emitting device away from the substrate and a surface of the electrode of the second light emitting device away from the substrate in a first direction is in a range of 5nm to 8nm, wherein the first direction is perpendicular to the substrate.
  14. 14. A display device, comprising: the display panel according to any one of claims 1 to 13; And the driving chip is used for driving the display panel to display.

Description

Display panel and display device Technical Field The disclosure relates to the field of display technologies, and in particular, to a display panel and a display device. Background As a novel luminescent material, quantum Dot (QD) has the advantages of high light color purity, high luminescent Quantum efficiency, adjustable luminescent color, long service life and the like, and becomes a research hot spot of the current novel luminescent material of light emitting Diodes (LIGHT EMITTING Diodes). Therefore, quantum Dot LIGHT EMITTING Diodes (QLED) using Quantum Dot materials as light-emitting layers have become the main direction of research on new display devices at present. Disclosure of utility model An object of an embodiment of the present disclosure is to provide a display panel and a display apparatus for promoting carrier transport balance of a light emitting device in the display panel and improving light emitting efficiency of the display panel. In one aspect, a display panel is provided. The display panel comprises a substrate and a plurality of light emitting devices positioned on one side of the substrate, wherein each light emitting device comprises oppositely arranged electrodes, and a hole transmission layer, a quantum dot light emitting layer and an electron transmission layer which are positioned between the oppositely arranged electrodes and sequentially overlapped, the plurality of light emitting devices comprise a first light emitting device and a second light emitting device, the first light emitting device is configured to emit blue light, and the second light emitting device is configured to emit any one of red light and green light. Wherein at least one of the light emitting devices further comprises an additional functional layer comprising at least one of a hole buffer layer, an electron buffer layer, a hole enhancement layer, and an electron enhancement layer. The hole buffer layer is positioned between the hole transport layer and the quantum dot light emitting layer of the first light emitting device, the hole buffer layer is configured to reduce the transport speed of holes, the electron buffer layer is positioned between the quantum dot light emitting layer and the electron transport layer of the second light emitting device, the electron buffer layer is configured to reduce the transport speed of electrons, the hole enhancement layer is positioned between the hole transport layer and the quantum dot light emitting layer of the second light emitting device, the hole enhancement layer is configured to increase the transport speed of holes, the electron enhancement layer is positioned between the quantum dot light emitting layer and the electron transport layer of the first light emitting device, and the electron enhancement layer is configured to increase the transport speed of electrons. In the display panel, the carrier transmission balance of the light emitting device is improved by arranging the additional functional layer. In the first light emitting device, electrons are transported slower than holes, the transport speed of the holes is reduced by the arrangement of the hole buffer layer, and the transport speed of the electrons is increased by the arrangement of the electron enhancement layer, so that the electrons and the holes are combined in the quantum dot light emitting layer, and the light emitting efficiency of the light emitting device is improved. In the second light emitting device, electrons are transported faster than holes, the electron transport speed is reduced by the arrangement of the electron buffer layer, and the hole transport speed is increased by the arrangement of the hole enhancement layer, so that electrons and holes are recombined in the quantum dot light emitting layer, and the light emitting efficiency of the light emitting device is improved. In some embodiments, the hole buffer layer material includes at least one of an insulating material, an interfacial dipole material, and an electron transport material. In some embodiments, the hole buffer layer material includes at least one of polymethyl methacrylate, aluminum oxide, polyvinylpyrrolidone, poly [ (9, 9-di (3 '- (N, N-dimethylamino) propyl) fluorenyl-2, 7-diyl) -alt- [ (9, 9-di-N-octylfluorenyl-2, 7-diyl), polyethoxyethylenimine, poly [ (9, 9-di (3' - (N, N-dimethylamino) propyl) fluorenyl-2, 7-diyl) -alt- [ (9, 9-di-N-octylfluorenyl 2, 7-diyl) -bromo ], and naphthalene diimide. In some embodiments, the hole buffer layer material includes a first cross-linking material formed from the first material cross-linking with a photo-sensitive cross-linking agent via a hydrocarbon insertion reaction, the first material including at least one of polymethyl methacrylate, poly [ (9, 9-bis (3' - (N, N-dimethylamino) propyl) fluorenyl-2, 7-diyl) -alt- [ (9, 9-di-N-octylfluorenyl-2, 7-diyl), and polyvinylpyrrolidone. In some embodiments, the photosensitive cross-linking agent includes at least one of