CN-224205581-U - Wafer cleaning device

CN224205581UCN 224205581 UCN224205581 UCN 224205581UCN-224205581-U

Abstract

The utility model provides a wafer cleaning device, which comprises a cleaning liquid conveying structure and an acid gas injection structure, wherein the cleaning liquid conveying structure comprises a first conveying pipeline and the acid gas injection structure comprises a second conveying pipeline, the second conveying pipeline is communicated with the first conveying pipeline, and the second conveying pipeline is configured to inject acid gas into the cleaning liquid before the first conveying pipeline conveys the cleaning liquid to the wafer cleaning machine. By adopting the wafer cleaning device provided by the utility model, the pH value of the cleaning liquid is reduced by premixing the carbon dioxide gas in the cleaning liquid, so that the electrochemical activity of the metal surface can be reduced when the wafer is cleaned by the cleaning liquid, and the occurrence of galvanic couple defects on the surface of the wafer can be greatly inhibited.

Inventors

ZHANG ZHAOKANG
ZHOU WENQUAN

Assignees

芯联先锋集成电路制造(绍兴)有限公司

Dates

Publication Date: 20260505
Application Date: 20250514

Claims (10)

1. A wafer cleaning apparatus, comprising: a cleaning liquid delivery structure including a first delivery line configured to deliver a cleaning liquid to a wafer cleaning station, and And the acid gas injection structure comprises a second conveying pipeline, the second conveying pipeline is communicated with the first conveying pipeline, and the second conveying pipeline is configured to inject acid gas into the cleaning liquid before the first conveying pipeline conveys the cleaning liquid to the wafer cleaning machine table.
2. The wafer cleaning apparatus of claim 1, wherein the acid gas injection structure further comprises a flow control unit configured to control a flow rate of the acid gas delivered by the second delivery line.
3. The wafer cleaning apparatus of claim 2, wherein the flow control unit comprises a first control unit and a second control unit; The second control unit is closer to the output end of the second conveying pipeline than the first control unit, the first control unit is configured to control the flow rate of the acid gas conveyed by the second conveying pipeline based on a target value of the acid gas flow rate, and the second control unit is configured to detect an actual value of the acid gas flow rate in real time and further control the flow rate of the acid gas conveyed by the second conveying pipeline when the actual value deviates from the target value.
4. The wafer cleaning apparatus defined in any one of claims 1-3, wherein the cleaning fluid comprises deionized water and the acid gas comprises carbon dioxide.
5. The wafer cleaning apparatus of claim 1, wherein the cleaning solution delivery structure further comprises a concentration detection unit disposed on the first delivery line and configured to detect a concentration of an acid gas in the cleaning solution delivered by the first delivery line.
6. The wafer cleaning apparatus of claim 1, wherein the acid gas injection structure further comprises a switch valve configured to control the on/off of the second transfer line, the switch valve being closer to an input of the second transfer line than the first control unit.
7. The wafer cleaning apparatus of claim 1, further comprising the wafer cleaning station comprising a cleaning tank and a spray unit above the cleaning tank; The cleaning liquid conveying structure comprises a plurality of first conveying pipelines, one part of the first conveying pipelines are communicated with the spraying unit, and the other part of the first conveying pipelines are led into the cleaning tank.
8. The wafer cleaning apparatus of claim 7, wherein the wafer cleaning apparatus comprises at least two shower units, a portion of the first delivery line having at least two branch lines in one-to-one communication with the at least two shower units.
9. The wafer cleaning apparatus of claim 1, further comprising a temperature control unit configured to control a temperature of the cleaning fluid.
10. The wafer cleaning apparatus according to claim 9, wherein the temperature control unit controls the temperature of the cleaning liquid to be 20 ℃ to 40 ℃.

Description

Wafer cleaning device Technical Field The utility model relates to the technical field of semiconductor processing, in particular to a wafer cleaning device. Background In semiconductor manufacturing, a cleaning step after the etching process of the top metal layer is critical. Conventional Solvent cleaning (Solvent cleaning) tools use organic solvents to Clean wafer surface residues, but during cleaning, galvanic defects are easily generated due to the electrochemical reaction between the metal layer and the cleaning liquid. Such defects can lead to corrosion of metal lines, affecting device performance and yield. In the prior art, defects are usually reduced by optimizing a cleaning solution formula or adjusting process parameters, but the effect is limited. Disclosure of utility model The utility model aims to provide a wafer cleaning device, which solves the problem that the conventional wafer cleaning device is used for cleaning a wafer, so that the wafer surface has couple defects. In order to solve the above problems, the present utility model provides a wafer cleaning apparatus, comprising: a cleaning liquid delivery structure including a first delivery line configured to deliver a cleaning liquid to a wafer cleaning station, and And the acid gas injection structure comprises a second conveying pipeline, the second conveying pipeline is communicated with the first conveying pipeline, and the second conveying pipeline is configured to inject acid gas into the cleaning liquid before the first conveying pipeline conveys the cleaning liquid to the wafer cleaning machine table. Optionally, in the wafer cleaning apparatus, the acid gas injection structure further includes a flow control unit configured to control a flow rate of the acid gas conveyed by the second conveying pipeline. Optionally, in the wafer cleaning apparatus, the flow control unit includes a first control unit and a second control unit; The second control unit is closer to the output end of the second conveying pipeline than the first control unit, the first control unit is configured to control the flow rate of the acid gas conveyed by the second conveying pipeline based on a target value of the acid gas flow rate, and the second control unit is configured to detect an actual value of the acid gas flow rate in real time and further control the flow rate of the acid gas conveyed by the second conveying pipeline when the actual value deviates from the target value. Optionally, in the wafer cleaning apparatus, the cleaning solution includes deionized water, and the acid gas includes carbon dioxide. Optionally, in the wafer cleaning device, the cleaning solution conveying structure further includes a concentration detection unit, where the concentration detection unit is disposed on the first conveying pipeline and configured to detect a concentration of the acid gas in the cleaning solution conveyed by the first conveying pipeline. Optionally, in the wafer cleaning device, the acid gas injection structure further comprises a switch hand valve configured to control on-off of the second conveying pipeline, wherein the switch hand valve is closer to the input end of the second conveying pipeline than the first control unit. Optionally, in the wafer cleaning device, the wafer cleaning device further includes the wafer cleaning machine, and the wafer cleaning machine includes a cleaning tank and a spraying unit located above the cleaning tank; The cleaning liquid conveying structure comprises a plurality of first conveying pipelines, one part of the first conveying pipelines are communicated with the spraying unit, and the other part of the first conveying pipelines are led into the cleaning tank. Optionally, in the wafer cleaning device, the wafer cleaning device includes at least two spraying units, a part of the first conveying pipeline has at least two branch pipelines, and at least two branch pipelines are correspondingly communicated with at least two spraying units one by one. Optionally, in the wafer cleaning device, the wafer cleaning device further includes a temperature control unit configured to control a temperature of the cleaning liquid. Optionally, in the wafer cleaning device, the temperature control unit controls the temperature of the cleaning solution to be 20 ℃ to 40 ℃. In summary, the wafer cleaning device provided by the utility model comprises a cleaning liquid conveying structure, an acid gas injection structure and a cleaning liquid injection device, wherein the cleaning liquid conveying structure comprises a first conveying pipeline and the acid gas injection structure comprises a second conveying pipeline, the second conveying pipeline is communicated with the first conveying pipeline, and the second conveying pipeline is configured to inject acid gas into the cleaning liquid before the cleaning liquid is conveyed to the wafer cleaning machine by the first conveying pipeline. By adopting the wafer cleaning device pro