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CN-224205637-U - Top heat dissipation power module

CN224205637UCN 224205637 UCN224205637 UCN 224205637UCN-224205637-U

Abstract

A top heat dissipation power module relates to the technical field of semiconductors. The upper bridge bonding pad is welded/sintered on the top surface, and one side of the upper bridge bonding pad is connected with an anode pin extending out of the plastic package body; the utility model improves the convenience of the design of a driving circuit and balances the current capacity of the positive electrode pin, the negative electrode pin and the output pin through the layout design of the positive electrode pin, the negative electrode pin and the output pin.

Inventors

  • NIU LIGANG
  • LI JING
  • WANG KUN
  • Jin xiaoxing
  • WANG YI

Assignees

  • 江苏扬杰半导体有限公司

Dates

Publication Date
20260505
Application Date
20250605

Claims (10)

  1. 1. A top heat dissipating power module comprising: An upper bridge bonding pad (200), wherein an upper bridge power chip (210) is arranged on the top surface, one side of the upper bridge bonding pad (200) is connected with a positive electrode pin (220) extending out of the plastic package body (100), and the other side of the upper bridge bonding pad (200) is provided with an upper bridge driving pin (500); The upper bridge bonding pad (300) is welded/sintered with an upper bridge power chip (310), the upper bridge bonding pad (300) is connected with an output pin (330) extending out of the plastic package body (100) towards the same side of the upper bridge driving pin (500), and the same side of the output pin (330) is provided with an upper bridge driving pin (600); the top surface of the upper bridge power chip (210) is electrically connected with the lower bridge bonding pad (300); the negative electrode connecting bridge (400) is positioned on the same side as the positive electrode pin (220) and on the side part of the lower bridge bonding pad (300), the negative electrode connecting bridge (400) is provided with a negative electrode pin (410) extending out of the plastic package body (100), and the top surface of the lower bridge power chip (310) is electrically connected with the negative electrode connecting bridge (400); The distance between the output pin (330) and the upper bridge driving pin (500) is smaller than the distance between the output pin (330) and the lower bridge driving pin (600), and the output pins (330) are all positioned on one side, close to the upper bridge driving pin (500), of the central line of the top heat dissipation power module.
  2. 2. A top-level heat sink power module as claimed in claim 1, wherein said upper bridge power chip (210) is electrically connected to said upper bridge drive pins (500) and said lower bridge power chip (310) is electrically connected to said lower bridge drive pins (600).
  3. 3. A top-level heat sink power module as claimed in claim 1, wherein an extension bridge (320) is provided between the lower bridge pad (300) and the output pin (330).
  4. 4. A top heat sink power module according to claim 3, characterized in that the connection of the extension bridge (320) to the lower bridge pad (300) is provided with a stress buffer slot (321).
  5. 5. A top-level heat sink power module as claimed in claim 4, wherein said extension bridge (320) is connected to said lower bridge pad (300) at the front end of the stress buffer slot by a bond wire.
  6. 6. A top-level heat sink power module as claimed in claim 2, wherein the upper bridge drive pins (500) comprise spaced apart: An upper bridge gate pin (510) disposed on a side of the upper bridge pad (200) remote from the positive electrode pin (220); an upper bridge source or emitter pin one (520) disposed on a side of the upper bridge gate pin (510); The lower bridge drive pin (600) includes: a lower bridge gate lead (610) disposed on a side of the lower bridge pad (300) remote from the negative lead (410); A lower bridge source or emitter pin two (620) disposed laterally to the lower bridge gate pin (610).
  7. 7. The top heat sink power module of claim 6, wherein the upper bridge gate pins (510) are electrically connected to the upper bridge power chip (210) through upper bridge gate pads (511) in the plastic package (100); The upper bridge source or emitter pin one (520) is electrically connected with the upper bridge power chip (210) through an upper bridge source or emitter pad (521); The lower bridge grid pin (610) is electrically connected with the lower bridge power chip (310) through a lower bridge grid pad (611); The lower bridge source or emitter pin two (620) is electrically connected with the lower bridge power chip (310) through a lower bridge source or emitter pad (621).
  8. 8. The top-level heat sink power module of claim 1, wherein the number of positive pins (220) and negative pins (410) is equal and symmetrical based on a centerline of the plastic package (100).
  9. 9. The top-level heat sink power module of claim 1, wherein the upper bridge power chip (210) and the lower bridge power chip (310) are one or a combination of two of an IGBT chip, a MOSFET chip, an FRD chip, and an SBD chip.
  10. 10. The top-level heat sink power module of claim 1, wherein the positive pin (220), the output pin (330) and the negative pin (410) are comprised of a plurality of pins of equal width or are a single pin; The width of the pin monomers is greater than the width of the upper bridge gate pin (510), the upper bridge source or emitter pin one (520), the lower bridge gate pin (610), the lower bridge source or emitter pin two (620).

Description

Top heat dissipation power module Technical Field The utility model relates to the technical field of semiconductors, in particular to a top heat dissipation non-insulating power module. Background The power module is an integrated component formed by functionally combining and packaging power electronic devices, and is mainly used for realizing high-efficiency electric energy conversion and control system power transmission. A power module with top heat dissipation typically includes a plastic package, an insulating substrate, pins, and a power chip. According to the specification of GB4943.1-2011, safety of information technology equipment, section 1, general requirement, after the pollution level of a material assembly and a working environment is determined, the creepage distance between pins is in direct proportion to the working voltage of an effective value, so that the size of a power module is limited to be difficult to further reduce. In view of the above problems, an invention patent of a semiconductor package including embedded electric conductors is disclosed in the prior patent literature, such as 2023, 11, and 10. The scheme is as follows: The semiconductor package includes: The semiconductor device includes a package body, a first die pad partially encapsulated in the package body and including opposing first and second major faces, a second die pad partially encapsulated in the package body and including opposing first and second major faces, a first semiconductor die partially encapsulated in the package body and disposed on the first die pad and including first and second contact pads and connected to the first die pad by the second contact pad, a further device partially encapsulated in the package body and disposed on the second die pad and including first and second contact pads and connected to the second die pad by the second contact pad, at least one first lead connected to the first contact pad of the first semiconductor die and extending out of the package body, at least one second lead connected to the second contact pad of the further device and extending out of the package body, and an electrical conductor connected between the at least one first lead and the at least one second lead and completely encapsulated in the package body. The design is mainly aimed at Q-DPAK packaging products, the Q-DPAK can be compatible with various circuit topologies, the Q-DPAK comprises a half-bridge circuit, two bonding pads are arranged at the top of the structure, partial terminals are directly connected with the two bonding pads, and electric conductors are connected between partial pins, so that the technology has the following problems in actual use although the volume is greatly reduced: 1. 4 positive pins and 6 output pins, but only 2 negative pins, so that the current capacity is limited by the number of the negative pins. 2. The upper bridge driving pins (upper bridge grid pins, upper bridge source/emitter pins) and lower bridge driving pins (lower bridge grid pins, lower bridge source/emitter pins) are respectively positioned at two sides of the plastic package body, which is not beneficial to the design of a driving circuit. Therefore, how to balance the current capability of the positive, negative and output pins and improve the design convenience of the driving circuit is a technical problem to be solved in the scheme. Disclosure of utility model Aiming at the problems, the utility model provides the top heat dissipation power module which has the advantages of balancing the current capacity of the positive pin, the negative pin and the output pin and improving the design convenience of the driving circuit. The technical scheme of the utility model is as follows: A top heat dissipating power module comprising: An upper bridge bonding pad, wherein an upper bridge power chip is welded/sintered on the top surface, and one side of the upper bridge bonding pad is connected with a positive electrode pin extending out of the plastic package body; The upper bridge driving pin is connected with the upper bridge driving pin through a lower bridge bonding pad, the upper bridge driving pin is connected with a lower bridge power chip through a lower bridge bonding pad, the lower bridge bonding pad is connected with an output pin extending out of the plastic package body to the same side of the upper bridge driving pin, the same side of the output pin is provided with a lower bridge driving pin, and the lower bridge power chip is electrically connected with the lower bridge driving pin; the top surface of the upper bridge power chip is electrically connected with the lower bridge bonding pad; The negative electrode connecting bridge is arranged on the same side of the positive electrode pin and is positioned on the side part of the lower bridge bonding pad, the negative electrode connecting bridge is provided with a negative electrode pin extending out of the plastic package body, and the top su