CN-224212756-U - Deposition apparatus

CN224212756UCN 224212756 UCN224212756 UCN 224212756UCN-224212756-U

Abstract

The embodiment of the disclosure relates to the field of semiconductor manufacturing, and provides deposition equipment, which comprises a cavity, an air inlet mechanism, an air extraction opening, a base, a wafer heater and a cooling system, wherein the cooling system comprises a first pipeline, a second pipeline, a cooling source assembly and a controller, at least part of the first pipeline is arranged in the base, at least part of the second pipeline is arranged in the side wall of the cavity, the first pipeline and the second pipeline are connected with the cooling source assembly, the cooling source assembly provides cooling liquid for the first pipeline to cool the wafer, the cooling source assembly provides cooling liquid for the second pipeline to cool the cavity, and the controller is communicated with the cooling source assembly and is used for controlling the flow rate of the cooling liquid in the first pipeline and the second pipeline. The embodiment of the disclosure can at least improve the reliability and efficiency of preparing the film and can also reduce the preparation cost of the deposition equipment.

Inventors

LI JIGANG
WANG BIN
ZHANG GUOWEI

Assignees

江苏首芯半导体科技有限公司

Dates

Publication Date: 20260508
Application Date: 20250427

Claims (10)

1. A deposition apparatus, comprising: A cavity; The air inlet mechanism is arranged at the top of the cavity and is provided with an air inlet hole and an air inlet pipeline communicated with the air inlet hole, the air inlet pipeline is communicated with the cavity, and the air inlet hole is used for being communicated with an air inlet pipe for providing air; the air extraction opening is communicated with the cavity; The base is provided with a bearing surface for bearing the wafer, and is positioned in the cavity; The wafer heater is arranged in the base and is used for heating the wafer; The cooling system comprises a first pipeline, a second pipeline, a cooling source assembly and a controller, wherein at least part of the first pipeline is arranged in the base, at least part of the second pipeline is arranged in the side wall of the cavity, the first pipeline and the second pipeline are connected with the cooling source assembly, the cooling source assembly provides cooling liquid for the first pipeline to cool the wafer, the cooling source assembly provides cooling liquid for the second pipeline to cool the cavity, and the controller is communicated with the cooling source assembly and is used for controlling the flow rate of the cooling liquid in the first pipeline and the second pipeline.
2. The deposition apparatus of claim 1, wherein the first conduit comprises a first inflow conduit, a first cooling conduit, and a first outflow conduit in communication, the first cooling conduit being positioned within the susceptor, the cooling fluid flowing into the first cooling conduit through the first inflow conduit to cool the susceptor and flowing out through the first outflow conduit; wherein the first cooling pipeline is spiral.
3. The deposition apparatus of claim 2, wherein at least a portion of the first cooling conduit is orthographic projected onto the bearing surface beyond an outer edge of the orthographic projection of the wafer heater onto the bearing surface.
4. The deposition apparatus of claim 2, wherein the second conduit comprises a second inflow conduit, a second cooling conduit, and a second outflow conduit in communication, the second cooling conduit being positioned within the chamber sidewall, the cooling fluid flowing into the second cooling conduit through the second inflow conduit to cool the chamber sidewall and flowing out through the second outflow conduit, the chamber comprising an inner wall surface and an outer wall surface, the second cooling conduit being positioned between the inner wall surface and the outer wall surface.
5. The deposition apparatus of claim 1, wherein the cooling source assembly comprises: The liquid storage tank is used for storing the cooling liquid, and the first pipeline and the second pipeline are respectively communicated with the liquid storage tank; and the refrigerator is used for refrigerating the cooling liquid in the liquid storage tank.
6. The deposition apparatus of claim 1, wherein the cooling system further comprises: A first valve disposed on the first conduit and connected to the controller, the controller configured to control an opening of the first valve to control the flow rate of the cooling liquid in the first conduit; And the second valve is arranged on the second pipeline and is connected with the controller, and the controller is configured to control the opening degree of the second valve so as to control the flow rate of the cooling liquid in the second pipeline.
7. The deposition apparatus of claim 6, wherein the cooling system further comprises: A first temperature sensor located on the base, the first temperature sensor being connected to the controller, the first temperature sensor being configured to test the temperature of the base and upload the temperature of the base to the controller, the controller being configured to open the first valve when the temperature of the base is greater than a first threshold temperature; The second temperature sensor is positioned on the cavity, the second temperature sensor is connected with the controller and used for testing the temperature of the cavity and uploading the temperature of the cavity to the controller, the controller is configured to open the second valve when the temperature of the cavity is larger than a second threshold temperature, and the controller is further configured to close the second valve when the temperature of the cavity is smaller than or equal to the second threshold temperature.
8. The deposition apparatus of claim 4, wherein the deposition apparatus further comprises: And the plasma source assembly is connected with the cavity and is used for converting gas into plasma.
9. The deposition apparatus of claim 8, wherein the chamber comprises an excitation chamber and a deposition chamber that are vertically in communication, the excitation chamber being positioned above the deposition chamber, the gas inlet mechanism being disposed within the excitation chamber and coupled to the plasma source assembly, the susceptor being disposed within the deposition chamber.
10. The deposition apparatus of claim 9, wherein the second cooling conduit is disposed within the deposition chamber sidewall, the cooling system further comprising: A third conduit disposed within the excitation cavity sidewall and in communication with the cooling source assembly, the controller further configured to control the coolant flow rate of the third conduit; And the third valve is arranged on the third pipeline and is connected with the controller, and the controller is configured to control the opening degree of the third valve so as to control the flow rate of the cooling liquid in the third pipeline.

Description

Deposition apparatus Technical Field The embodiment of the disclosure relates to the field of semiconductor manufacturing, in particular to a deposition device. Background The deposition process is a film forming process common in semiconductor manufacturing processes. The deposition processes mainly include chemical vapor deposition (CVD, chemical vapor deposition), physical vapor deposition (PVD, physical vapor deposition), and atomic layer deposition (ALD, atomic layer deposition). Taking chemical vapor deposition as an example, chemical vapor deposition is a process technology in which reactant substances react chemically under gaseous conditions to generate solid substances which are deposited on the surface of a wafer to prepare a film. The process technology is realized by a deposition device. However, the deposition apparatus in the related art has a problem such that the reliability of the thin film of the deposition apparatus is low. Disclosure of utility model The embodiment of the disclosure provides a deposition device, which can at least improve the reliability and efficiency of preparing a film and can also reduce the preparation cost of the deposition device. According to some embodiments of the present disclosure, a deposition apparatus is provided, including a chamber, an air intake mechanism disposed at a top of the chamber, the air intake mechanism having an air intake hole and an air intake pipe in communication with the air intake hole, the air intake pipe in communication with the chamber, the air intake hole being configured to communicate with an air intake pipe for providing a gas, an air extraction port in communication with the chamber, a susceptor disposed with a carrying surface for carrying a wafer, the susceptor being disposed in the chamber, a wafer heater disposed in the susceptor for heating the wafer, a cooling system including a first pipe, a second pipe, a cooling source assembly and a controller, at least a portion of the first pipe being disposed in the susceptor, at least a portion of the second pipe being disposed in a sidewall of the chamber, the first pipe and the second pipe being connected to the cooling source assembly, the cooling source assembly providing a cooling fluid to the first pipe, the cooling source assembly providing a cooling fluid to the wafer, and a controller in communication with the cooling source assembly. In some embodiments, the first pipeline comprises a first inflow pipeline, a first cooling pipeline and a first outflow pipeline which are communicated, the first cooling pipeline is positioned in the base, the cooling liquid flows into the first cooling pipeline through the first inflow pipeline to cool the base and flows out through the first outflow pipeline, and the first cooling pipeline is spiral. In some embodiments, at least a portion of the first cooling conduit is orthographic projected on the bearing surface beyond an outer edge of the orthographic projection of the wafer heater on the bearing surface. In some embodiments, the second pipeline comprises a second inflow pipeline, a second cooling pipeline and a second outflow pipeline which are communicated, the second cooling pipeline is positioned in the cavity side wall, the cooling liquid flows into the second cooling pipeline through the second inflow pipeline to cool the cavity side wall and flows out through the second outflow pipeline, the cavity comprises an inner wall surface and an outer wall surface, and the second cooling pipeline is positioned between the inner wall surface and the outer wall surface. In some embodiments, the cooling source assembly comprises a liquid storage tank for storing the cooling liquid, the first pipeline and the second pipeline are respectively communicated with the liquid storage tank, and a refrigerator for refrigerating the cooling liquid in the liquid storage tank. In some embodiments, the cooling system further comprises a first valve disposed on the first conduit and coupled to the controller, the controller configured to control an opening of the first valve to control the coolant flow rate within the first conduit, and a second valve disposed on the second conduit and coupled to the controller, the controller configured to control an opening of the second valve to control the coolant flow rate within the second conduit. In some embodiments, the cooling system further comprises a first temperature sensor located on the base, the first temperature sensor being connected to the controller, the first temperature sensor being configured to test the temperature of the base and upload the temperature of the base to the controller, the controller being configured to open the first valve when the temperature of the base is greater than a first threshold temperature, the controller being further configured to close the first valve when the temperature of the base is less than or equal to the first threshold temperature, a second temperature se