CN-224212822-U - Crucible structure for growing gallium oxide monocrystal by VB method

Abstract

The utility model relates to the technical field of gallium oxide crystal growth and discloses a crucible structure for growing gallium oxide single crystals by a VB method, which comprises a crucible shell, a seed crystal cavity, an expanding cavity, a reducing cavity, a shoulder expanding cavity and an equal-diameter cavity, wherein the seed crystal cavity, the expanding cavity, the reducing cavity, the shoulder expanding cavity and the equal-diameter cavity are arranged in the crucible shell, the seed crystal cavity is arranged at one end part of the crucible shell, one end of the seed crystal cavity is in a closed arrangement, the other end of the seed crystal cavity is connected with the expanding cavity, the expanding cavity is connected with the reducing cavity, the reducing cavity is connected with the shoulder expanding cavity, the shoulder expanding cavity is connected with the equal-diameter cavity, and the other end of the equal-diameter cavity is in an open arrangement. Through rationalizing the gallium oxide growth technology, the crucible shell, the seed crystal cavity, the diameter-expanding cavity, the diameter-reducing cavity, the shoulder-expanding cavity and the constant diameter cavity are adopted, so that the gallium oxide crystal can be separated from the crucible wall during growth and cooling, dislocation proliferation and a twin crystal structure are not easy to occur, the dislocation density of the crystal is reduced, and the performance of a semiconductor chip is improved. The crucible structure can prepare cylindrical gallium oxide single crystals with low dislocation density.

Inventors

• DENG ZHOU
• Lan Gaowu

Assignees

• 瑶曦科技(厦门)有限公司

Dates

Publication Date

20260508

Application Date

20250508

Claims (10)

1. 1. The crucible structure for growing gallium oxide single crystals by the VB method is characterized by comprising a crucible shell, a seed crystal cavity, an expanding cavity, a reducing cavity, a shoulder expanding cavity and an equal-diameter cavity, wherein the seed crystal cavity, the expanding cavity, the reducing cavity, the shoulder expanding cavity and the equal-diameter cavity are arranged in the crucible shell, the seed crystal cavity is arranged at one end part of the crucible shell, one end of the seed crystal cavity is in a closed arrangement, the other end of the seed crystal cavity is connected with the expanding cavity, the diameter expanding cavity is connected with the reducing cavity, the reducing cavity is connected with the shoulder expanding cavity, the shoulder expanding cavity is connected with the equal-diameter cavity, and the other end of the equal-diameter cavity is in an open arrangement.
2. 2. The crucible structure for growing gallium oxide single crystals by VB method according to claim 1, wherein the shoulder expanding cavity is a prismatic shoulder expanding cavity or a circular truncated cone type shoulder expanding cavity, the large-size end of the shoulder expanding cavity is connected with the constant diameter cavity, and the small-size end of the shoulder expanding cavity is connected with the diameter reducing cavity.
3. 3. The crucible structure for growing gallium oxide single crystals by VB process as recited in claim 1, wherein the diameter-enlarging chamber is a prismatic diameter-enlarging chamber or a cylindrical diameter-enlarging chamber.
4. 4. A crucible structure for growing a gallium oxide single crystal by VB method according to claim 3, wherein the size of the diameter-enlarging chamber is larger than the size of the diameter-reducing chamber.
5. 5. A crucible structure for growing a gallium oxide single crystal by VB method according to claim 1, wherein the seed cavity is selected from a prismatic seed cavity and a cylindrical seed cavity.
6. 6. A crucible structure for growing a gallium oxide single crystal by VB process according to claim 5, wherein the seed cavity has a size smaller than that of the diameter-enlarging cavity.
7. 7. The crucible structure for growing gallium oxide single crystals by the VB method according to claim 1, wherein the crucible shell is made of iridium or iridium alloy or platinum-rhodium alloy.
8. 8. The crucible structure for growing gallium oxide single crystals by VB method according to claim 1, wherein the thickness of the crucible shell is selected from 0.1mm to 2mm.
9. 9. The crucible structure for growing gallium oxide single crystals by VB method according to claim 1, wherein at least 1 diameter-enlarging chamber is selected, at least 1 diameter-reducing chamber is selected, the number of the diameter-enlarging chambers is equal to the number of the diameter-reducing chambers, each diameter-reducing chamber connected with each diameter-reducing chamber is set as one group, and the diameter-reducing chamber of each group is connected with the diameter-enlarging chamber of the adjacent group.
10. 10. The crucible structure for growing gallium oxide single crystals by VB method according to claim 2, wherein the included angle alpha of the shoulder-expanding cavity is 60-150 degrees.

Description

Crucible structure for growing gallium oxide monocrystal by VB method Technical Field The utility model relates to the technical field of gallium oxide crystal growth, in particular to a crucible structure for growing gallium oxide single crystals by a VB method. Background Ga 2O3 single crystal is considered as the most potential fourth generation semiconductor material in the future. The crystal form of the semiconductor material is confirmed to be alpha, beta, gamma, delta and epsilon, wherein the beta structure is the most stable and easy to prepare, and the semiconductor material is an excellent wide-forbidden-band semiconductor material. Compared with silicon carbide and gallium nitride, gallium oxide has wider forbidden bandwidth (about 4.9eV forbidden bandwidth) and theoretical critical breakdown field intensity of 8MV/cm, is an emerging ultra-wide forbidden bandwidth semiconductor material, can be used for preparing semiconductor devices such as power devices, microwave radio frequency devices, solar blind ultraviolet detectors and the like, and has great application value in the fields of high-voltage power control, radio frequency communication, flame detection and the like. The beta-Ga 2O3 is suitable for melt growth, has high growth speed and lower growth cost, and is a new generation of semiconductor material which is rapidly developed in the fields of future support information, energy, traffic, manufacturing, national defense and the like. The main methods currently used for preparing beta-Ga 2O3 single crystals are Czochralski method (CZ), vertical Bridgman method (VB), guided mode method (EFG), etc. The guided mode method adopted in the current market mainly grows flaky beta gallium oxide single crystals. Since β gallium oxide single crystals belong to monoclinic systems, the crystal structure characteristics determine that the principal plane of the single crystal sheet prepared by the guided mode method is usually the (100) plane. The rate of gallium oxide epitaxy is related to the crystal plane orientation of the substrate, with (100) plane homoepitaxy being the most difficult and (001) and (010) planes being easier. In the preparation of gallium oxide semiconductor wafer substrates, the (010) and (001) surfaces are preferably used as the main surfaces of the substrates, so that the single crystal cannot meet the preparation of large-size substrates by a guided mode method, and the preparation of large-thickness crystals is required to be subjected to bevel side cutting, and the process of growing the large-thickness crystals by the guided mode method is difficult to realize. Although the single crystal material processing substrates of (010) and (001) main surfaces can be prepared by the Czochralski method, a gallium oxide single crystal which is uniformly doped cannot be obtained due to the segregation coefficient of the doping element. The VB method and the improved VB method are ideal growth methods with (010) crystal faces and (001) crystal faces as main faces at present, but the VB method is easy to generate dislocation proliferation and a twin crystal structure due to the fact that crystals are always in contact with the crucible wall during growth and temperature reduction, so that the dislocation density of the crystals is high, and the performance of a semiconductor chip is influenced. Accordingly, in view of the above problems, the existing gallium oxide growth technology needs to be further improved. Disclosure of utility model The utility model aims to solve the problems that the existing gallium oxide growth always contacts with the crucible wall during crystal growth and cooling, dislocation proliferation and a twin crystal structure are extremely easy to occur, the dislocation density of the crystal is high, the performance of a semiconductor chip is influenced and the like; through rationalizing the gallium oxide growth technology, the crucible shell, the seed crystal cavity, the diameter-expanding cavity, the diameter-reducing cavity, the shoulder-expanding cavity and the constant diameter cavity are adopted, so that the gallium oxide crystal can be separated from the crucible wall during growth and cooling, dislocation multiplication and a twin crystal structure are not easy to occur, the dislocation density of the crystal is reduced, the performance of a semiconductor chip is improved, and the like. The technical scheme of the utility model is as follows: The crucible structure comprises a crucible shell, a seed crystal cavity, an expanding cavity, a reducing cavity, a shoulder expanding cavity and an equal-diameter cavity, wherein the seed crystal cavity, the expanding cavity, the reducing cavity, the shoulder expanding cavity and the equal-diameter cavity are arranged in the crucible shell, the seed crystal cavity is arranged at one end part of the crucible shell, one end of the seed crystal cavity is in a closed arrangement, the other end of the seed crystal cavit