CN-224212826-U - Thermal field of single crystal furnace

CN224212826UCN 224212826 UCN224212826 UCN 224212826UCN-224212826-U

Abstract

The utility model provides a single crystal furnace thermal field, which is characterized in that a first electrode foot plate and a second electrode foot plate are respectively arranged at the bottom of an annular heating piece and are positioned at two sides of the annular heating piece, a main heater is used for heating the upper part of a crucible, and the annular heating piece is sleeved at the lower part of the crucible and is used for heating the lower part of the crucible. Through the single crystal furnace thermal field disclosed by the utility model, the main heater and the bottom heater heat the crucible at the same time, and can effectively reduce the temperature difference in the crucible, so that the convection of silicon solution in the crucible is more uniform, the doping of oxygen impurities into a single crystal rod is reduced, and the quality of the single crystal rod is ensured.

Inventors

Jing Huayu
WANG XINQIANG
ZHOU TAO
LIU LIGUO

Assignees

双良硅材料(包头)有限公司

Dates

Publication Date: 20260508
Application Date: 20250427

Claims (10)

1. The single crystal furnace thermal field is characterized by comprising a main heater and a bottom heater; the bottom heater comprises an annular heating element, a first electrode foot plate and a second electrode foot plate; The first electrode foot plate and the second electrode foot plate are respectively arranged at the bottom of the annular heating piece and are positioned at two sides of the annular heating piece; the main heater is used for heating the upper part of the crucible; The annular heating element is sleeved on the lower part of the crucible and is used for heating the lower part of the crucible.
2. The thermal field of a single crystal furnace according to claim 1, wherein the annular heating element comprises a first heating lobe, a second heating lobe, a third heating lobe, a fourth heating lobe, a first connecting plate, a second connecting plate, a third connecting plate and a fourth connecting plate; The first side of the first heating valve is connected with the first side of the second heating valve through the first connecting plate, the second side of the second heating valve is connected with the first side of the third heating valve through the second connecting plate, the second side of the third heating valve is connected with the first side of the fourth heating valve through the third connecting plate, and the second side of the fourth heating valve is connected with the second side of the first heating valve through the fourth connecting plate.
3. The single crystal furnace thermal field of claim 2, wherein the second and fourth connection plates are U-shaped structural members.
4. The single crystal furnace thermal field of claim 3, wherein the lower part of the second side of the second heating lobe is connected with the lower part of the first side of the third heating lobe through the second connecting plate; The lower part of the second side of the fourth heating flap is connected with the lower part of the second side of the first heating flap through the fourth connecting plate.
5. The single crystal furnace thermal field of claim 2, wherein an upper portion of the first side of the first heat generating lobe is connected to an upper portion of the first side of the second heat generating lobe by the first connecting plate; the upper part of the second side of the third heating flap is connected with the upper part of the first side of the fourth heating flap through the third connecting plate.
6. The single crystal furnace thermal field of claim 5, wherein the first electrode foot plate is disposed on a first side of the first heat generating lobe and a first side of the second heat generating lobe; The second electrode foot is disposed on the second side of the third heat generating lobe and the first side of the fourth heat generating lobe.
7. The single crystal furnace thermal field of claim 2, wherein the lower bottom surface of the first electrode foot, the lower bottom surface of the second connecting plate, and the lower bottom surface of the fourth connecting plate are at the same height.
8. The single crystal furnace thermal field of claim 2, wherein the first heating lobe, the second heating lobe, the third heating lobe, and the fourth heating lobe are all the same multi-segment curvilinear structure.
9. The single crystal furnace thermal field of claim 8, wherein the first heating lobe, the second heating lobe, the third heating lobe, and the fourth heating lobe are each formed by bending a heating material of the same width.
10. The single crystal furnace thermal field of claim 2, wherein a spacing between the second side of the second heat generating lobe and the first side of the third heat generating lobe is 20mm or more; The distance between the second side of the fourth heating flap and the second side of the first heating flap is more than or equal to 20mm.

Description

Thermal field of single crystal furnace Technical Field The utility model relates to the field of single crystal production, in particular to a single crystal furnace thermal field. Background The heater is an important device for providing heat in the single crystal furnace, and is generally provided with a main heater and a planar bottom heater, wherein the main heater mainly heats the side wall of the crucible, the bottom heater mainly heats the bottom of the crucible, and the main heater and the bottom heater are heated together to provide a heat source for a crystal pulling thermal field. However, with the increase of the thermal field size of the single crystal furnace and the total amount of the silicon solution in the crucible, the convection of the silicon solution in the crucible is aggravated, and the oxygen content of the produced single crystal rod is increased easily, so that the quality of the single crystal rod is seriously affected, and therefore, a thermal field capable of reducing the convection of the silicon solution in the crucible is urgently needed. Disclosure of utility model In view of the above, the embodiment of the utility model provides a single crystal furnace thermal field to solve the problem that the oxygen content of a single crystal rod is increased due to the fact that the convection of silicon solution in a crucible is aggravated due to the increase of the size of the existing single crystal furnace thermal field. In order to achieve the above object, the embodiment of the present utility model provides the following technical solutions: a single crystal furnace thermal field comprises a main heater and a bottom heater; The bottom heater comprises an annular heating element, a first electrode foot plate and a second electrode foot plate; The first electrode foot plate and the second electrode foot plate are respectively arranged at the bottom of the annular heating piece and are positioned at two sides of the annular heating piece; The main heater is used for heating the upper part of the crucible; The annular heating element is sleeved at the lower part of the crucible and is used for heating the lower part of the crucible. Preferably, the annular heating piece comprises a first heating flap, a second heating flap, a third heating flap, a fourth heating flap, a first connecting plate, a second connecting plate, a third connecting plate and a fourth connecting plate; The first side of the first heating valve is connected with the first side of the second heating valve through a first connecting plate, the second side of the second heating valve is connected with the first side of the third heating valve through a second connecting plate, the second side of the third heating valve is connected with the first side of the fourth heating valve through a third connecting plate, and the second side of the fourth heating valve is connected with the second side of the first heating valve through a fourth connecting plate. Preferably, the second connecting plate and the fourth connecting plate are U-shaped structural members. Preferably, the lower part of the second side of the second heating flap is connected with the lower part of the first side of the third heating flap through a second connecting plate; the lower part of the second side of the fourth heating flap is connected with the lower part of the second side of the first heating flap through a fourth connecting plate. Preferably, the upper part of the first side of the first heating flap is connected with the upper part of the first side of the second heating flap through a first connecting plate; The upper part of the second side of the third heating valve is connected with the upper part of the first side of the fourth heating valve through a third connecting plate. Preferably, the first electrode foot plate is arranged on the first side of the first heating valve and the first side of the second heating valve; the second electrode foot plate is arranged on the second side of the third heating valve and the first side of the fourth heating valve. Preferably, the lower bottom surface of the first electrode foot, the lower bottom surface of the second connecting plate and the lower bottom surface of the fourth connecting plate are at the same height. Preferably, the first heating lobe, the second heating lobe, the third heating lobe and the fourth heating lobe are all of the same multi-section curve structure. Preferably, the first heating flap, the second heating flap, the third heating flap and the fourth heating flap are all formed by bending heating materials with the same width. Preferably, the distance between the second side of the second heating flap and the first side of the third heating flap is more than or equal to 20mm; The distance between the second side of the fourth heating valve and the second side of the first heating valve is more than or equal to 20mm. The utility model provides a single crystal fu