CN-224212830-U - Carrier positioning structure, graphite disc, quartz carrier and tray base

CN224212830UCN 224212830 UCN224212830 UCN 224212830UCN-224212830-U

Abstract

The utility model relates to a carrier positioning structure, a graphite disc, a quartz carrier and a tray base, wherein the carrier positioning structure is used for coaxially positioning and matching the graphite disc epitaxially grown by silicon carbide with the carrier base, the carrier positioning structure comprises a positioning structure and a positioning and matching structure, the positioning structure and the graphite disc are coaxially arranged at the bottom of the graphite disc, the positioning and matching structure and the carrier base are coaxially arranged at the top of the carrier base, and the positioning structure is in concave-convex matching with the positioning and matching structure so that the graphite disc and the carrier base can be coaxially arranged on the carrier base. When placing the graphite dish, the location structure on the graphite dish can cooperate with the location cooperation structure on the microscope carrier base, and makes graphite dish and microscope carrier base coaxial, when can avoid follow-up adjustment graphite dish position, graphite dish and microscope carrier base friction produce the granule, guarantees product quality.

Inventors

LI GUANG
LI YIZHOU
LIU HU
ZHAO NING
WANG BO
PENG TONGHUA
YANG JIAN
ZENG JIANG
PENG YONG

Assignees

深圳市重投天科半导体有限公司
北京天科合达半导体股份有限公司

Dates

Publication Date: 20260508
Application Date: 20250520

Claims (18)

1. A carrier positioning structure for coaxial positioning engagement of a graphite disc (100) for epitaxial growth of silicon carbide with a carrier base, comprising: The positioning structure and the graphite disc (100) are coaxially arranged at the bottom of the graphite disc (100); The positioning and matching structure is coaxially arranged at the top of the carrier base, and the positioning structure is in concave-convex matching with the positioning and matching structure, so that the graphite disc (100) and the carrier base can be coaxially arranged on the carrier base.
2. The carrier positioning structure of claim 1, wherein one of the positioning structure and the positioning mating structure is an annular boss (130) and the other is an annular groove.
3. The carrier positioning structure according to claim 2, wherein the annular boss (130) includes a base plane for being provided to the graphite disk (100) or the stage base, a boss circumferential inner wall surface (132) and a boss circumferential outer wall surface (131), the boss circumferential inner wall surface (132) and the boss circumferential outer wall surface (131) extending from the base plane in a direction away from the base plane, at least one of the boss circumferential inner wall surface (132) and the boss circumferential outer wall surface (131) being provided obliquely from an end connected to the base plane so that the boss circumferential inner wall surface (132) and an end of the boss circumferential outer wall surface (131) away from the base plane are brought close to each other.
4. A carrier positioning structure as claimed in claim 3, characterized in that the boss circumferential inner wall surface (132) is connected to an end of the boss circumferential outer wall surface (131) remote from the base plane.
5. The carrier positioning structure according to claim 4, wherein the annular groove includes a groove circumferential inner wall surface for contact-fitting with the boss circumferential inner wall surface (132), and a groove circumferential outer wall surface for contact-fitting with the boss circumferential outer wall surface (131).
6. The carrier positioning structure of claim 5, wherein the annular groove further includes a contact plane (230), the groove circumferential inner wall surface surrounds the contact plane (230), and a circumferential edge of the contact plane (230) is connected with an upper edge of the groove circumferential inner wall surface.
7. The carrier positioning structure according to claim 5, wherein the annular groove further includes an escape groove (330), the groove circumferential inner wall surface surrounds the escape groove (330), and an upper edge of the escape groove (330) is connected with an upper edge of the groove circumferential inner wall surface.
8. The utility model provides a graphite dish, its characterized in that, the bottom of graphite dish (100) sets up location structure, location structure with graphite dish (100) coaxial arrangement, location structure is used for with coaxial arrangement in the unsmooth cooperation of location cooperation structure at the top of microscope carrier base, so that graphite dish (100) with the microscope carrier base is arranged in coaxially on the microscope carrier base.
9. The graphite disk according to claim 8, wherein the positioning structure is an annular boss (130), the annular boss (130) includes a base plane for being provided to the graphite disk (100), a boss circumferential inner wall surface (132) and a boss circumferential outer wall surface (131), the boss circumferential inner wall surface (132) and the boss circumferential outer wall surface (131) extend from the base plane in a direction away from the base plane, and at least one of the boss circumferential inner wall surface (132) and the boss circumferential outer wall surface (131) is provided obliquely from an end connected to the base plane so that an end of the boss circumferential inner wall surface (132) and the boss circumferential outer wall surface (131) away from the base plane are brought close to each other.
10. The graphite disk according to claim 9, characterized in that the boss circumferential inner wall surface (132) is connected to an end of the boss circumferential outer wall surface (131) remote from the base plane.
11. The graphite disc (100) of claim 9, wherein the boss circumferential outer wall surface (131) extends from a Zhou Xiangpan wall of the graphite disc (100) in a direction parallel to an axis direction of the graphite disc (100) and away from the graphite disc (100).
12. The graphite disc (100) of claim 8, wherein the Zhou Xiangpan walls of the graphite disc (100) are provided with an annular extension (120), the annular extension (120) extending radially outwardly of the graphite disc (100).
13. A quartz carrier for silicon carbide epitaxial growth loading chamber to bear the graphite disc (100) according to claim 8, wherein the top of the quartz carrier (200) is provided with a positioning matching structure coaxial with the quartz carrier (200), and the positioning matching structure is in concave-convex matching with the positioning structure on the graphite disc (100) so that the graphite disc (100) is coaxial with the quartz carrier (200).
14. The quartz stage of claim 13, wherein the positioning mating structure is an annular groove (220), the annular groove (220) comprising a groove circumferential inner wall surface (222) and a groove circumferential outer wall surface (221), at least one of the groove circumferential inner wall surface (222) and the groove circumferential outer wall surface (221) being disposed obliquely so that upper edges of the groove circumferential inner wall surface (222) and the groove circumferential outer wall surface (221) are distant from each other.
15. The quartz susceptor according to claim 14, wherein said annular recess (220) further comprises a contact plane (230), said recess circumferential inner wall surface (222) surrounds said contact plane (230), and a circumferential edge of said contact plane (230) is connected to an upper edge of said recess circumferential inner wall surface (222).
16. A tray base for a silicon carbide epitaxial growth process chamber for carrying a graphite disc (100) according to claim 8, wherein a positioning and matching structure coaxial with the tray base (300) is arranged on the top of the tray base (300), and the positioning and matching structure is in concave-convex matching with the positioning structure on the graphite disc (100) so as to enable the graphite disc (100) to be coaxial with the tray base (300).
17. The tray base (300) according to claim 16, wherein the positioning engagement structure is an annular groove (320), the annular groove (320) including a groove circumferential inner wall surface (322) and a groove circumferential outer wall surface (321), at least one of the groove circumferential inner wall surface (322) and the groove circumferential outer wall surface (321) being provided obliquely so that upper edges of the groove circumferential inner wall surface (322) and the groove circumferential outer wall surface (321) are distant from each other.
18. The tray base (300) according to claim 17, wherein the annular groove (320) further comprises a relief groove (330), the groove circumferential inner wall surface (322) surrounds the relief groove (330), and an upper edge of the relief groove (330) is connected with an upper edge of the groove circumferential inner wall surface (322).

Description

Carrier positioning structure, graphite disc, quartz carrier and tray base Technical Field The utility model relates to the technical field of silicon carbide epitaxial growth, in particular to a carrier positioning structure, a graphite disc, a quartz carrier and a tray base. Background Silicon carbide (SiC for short) is used as a typical representative of a third generation wide bandgap semiconductor material, has the characteristics of critical breakdown field strength, high thermal conductivity, high electron saturation drift speed, large bandgap, strong radiation resistance and the like, greatly improves the energy conversion efficiency of a power device, meets the requirements of the next generation of power electronic equipment on higher power, smaller volume, higher adaptability to severe environments such as high temperature and high radiation and the like, and has wide application prospects in various fields such as an ultrahigh voltage power transmission network, new energy automobiles, rail transit and the like. Unlike Si devices, siC devices cannot be fabricated directly on single crystal substrates, but rather, corresponding devices are fabricated on high quality SiC epitaxial layers, during fabrication, wafers need to be placed on a graphite disk first, then the graphite disk and wafers are manually placed on a quartz stage of a loading chamber of a silicon carbide epitaxial growth apparatus together, and then the graphite disk is moved left and right and up and down to determine whether to place in the exact center of the quartz stage. And finally, the graphite disc and the wafer are transferred into a process cavity of silicon carbide epitaxial growth equipment together through a mechanical arm to carry out heating growth epitaxy. The bottom of the graphite disk may rub against the quartz stage to generate particles while moving the graphite disk, and the particles may be blown against the wafer surface while closing the loading chamber, thereby generating defects. Disclosure of utility model The first object of the present utility model is to provide a carrier positioning structure, so as to position a graphite disc when the graphite disc is placed on a carrier base, ensure that the graphite disc is coaxial with the carrier base, and avoid particles generated by friction between the graphite disc and the carrier base when the position of the graphite disc is adjusted. The second object of the present utility model is to provide a graphite plate, a quartz carrier and a tray base with the above carrier positioning structure. In order to achieve the above purpose, the present utility model provides the following technical solutions: A carrier positioning structure for coaxial positioning cooperation of a graphite disk for epitaxial growth of silicon carbide and a carrier base, comprising: The positioning structure and the graphite disc are coaxially arranged at the bottom of the graphite disc; The positioning and matching structure is coaxially arranged at the top of the carrier base, and the positioning structure is in concave-convex matching with the positioning and matching structure, so that the graphite disc can be coaxially arranged on the carrier base with the carrier base. In one embodiment of the present application, one of the positioning structure and the positioning matching structure is an annular boss, and the other is an annular groove. In one embodiment of the present application, the annular boss includes a base plane for being provided to the graphite disk or the stage base, a boss circumferential inner wall surface extending from the base plane in a direction away from the base plane, and a boss circumferential outer wall surface, at least one of which is provided obliquely from an end connected to the base plane so that an end of the boss circumferential inner wall surface, which is away from the base plane, is brought close to each other. In one embodiment of the application, the boss circumferential inner wall surface is connected to an end of the boss circumferential outer wall surface remote from the base plane. In one embodiment of the present application, the annular groove includes a groove circumferential inner wall surface for contact-fit with the boss circumferential inner wall surface, and a groove circumferential outer wall surface for contact-fit with the boss circumferential outer wall surface. In one embodiment of the present application, the annular groove further includes a contact plane, the circumferential inner wall surface of the groove surrounds the contact plane, and the circumferential edge of the contact plane is connected with the upper edge of the circumferential inner wall surface of the groove. In one embodiment of the present application, the annular groove further includes a relief groove, the circumferential inner wall surface of the groove surrounds the relief groove, and an upper edge of the relief groove is connected with an upper edge of