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CN-224216164-U - Compound semiconductor film resonance cavity structure

CN224216164UCN 224216164 UCN224216164 UCN 224216164UCN-224216164-U

Abstract

The utility model discloses a compound semiconductor film resonance cavity structure, which comprises a germanium wafer substrate, wherein a plurality of film resonance cavities distributed in an array are formed on the top surface of the germanium wafer substrate, the film resonance cavities are formed on the top surface of the germanium wafer substrate through a photoetching process, aluminum oxide reflection coating layers are arranged in the inner parts of the film resonance cavities close to the middle parts, sapphire layer high feet with the height of 60 mu m and the width of 500 mu m are respectively arranged on the left side and the right side of each aluminum oxide reflection coating layer by utilizing a photoetching technology, the sapphire layer high feet and the aluminum oxide reflection coating layers are integrated and selectively grown through an MOCVD technology, the integrated structure meets the integration requirement through the microminiaturization design of the film resonance cavities and the array distribution, the MOCVD integrated process reduces the assembly error, avoids the interface layering problem of traditional epoxy resin adhesion, realizes the unification of miniaturization, high sensitivity and high reliability, and overcomes the problem of insufficient sound pressure response sensitivity.

Inventors

  • CHEN LINWEN
  • HUANG SHAOJIAN
  • XIAO JIE

Assignees

  • 深圳云芯晨半导体科技有限公司

Dates

Publication Date
20260508
Application Date
20250715

Claims (5)

  1. 1. A compound semiconductor film resonance cavity structure comprises a germanium wafer substrate (1) and is characterized in that a plurality of film resonance cavities (2) distributed in an array are formed in the top surface of the germanium wafer substrate (1), the film resonance cavities (2) are formed in the top surface of the germanium wafer substrate (1) through a photoetching process, an alumina reflection coating layer (3) is arranged in the middle of each film resonance cavity (2), sapphire layer high feet (4) with the height of 60 mu m and the width of 500 mu m are respectively arranged on the left side and the right side of each alumina reflection coating layer (3) through a photoetching technology, the sapphire layer high feet (4) and the alumina reflection coating layer (3) are of an integrated structure and are formed through selective growth of an MOCVD technology, the left side of each sapphire layer high foot (4) is used for inputting optical signals into the alumina reflection coating layer (3), and the right side of each sapphire layer high foot (4) is used for transmitting the optical signals after reflection modulation to an external photoelectric detector.
  2. 2. A compound semiconductor thin film resonance cavity structure as set forth in claim 1, wherein the germanium wafer substrate (1) is of 4-8 inch specification and has a thickness of 100-200 μm, and the thin film resonance cavities (2) are distributed in a square array, the size of a single cavity is 3X 3mm, and the distance between adjacent cavities is 200-500 μm.
  3. 3. A compound semiconductor thin film resonance cavity structure as claimed in claim 1, wherein the size of the alumina reflective coating layer (3) is 1.5X1.5 mm, the thickness is 15 μm, the alumina reflective coating layer is directly attached to the germanium wafer substrate (1) through a magnetron sputtering or electron beam evaporation process, the surface roughness is <1nm, the reflectivity is more than 95%, and the control precision of the magnetron sputtering or electron beam evaporation process parameters is that the thickness error is < + -0.5 μm, and the uniformity deviation is < + -1%.
  4. 4. The compound semiconductor thin film resonance cavity structure as set forth in claim 1, wherein the side wall of the thin film resonance cavity (2) is prepared by dry etching process, the verticality of the side wall is more than 85 degrees, the roughness of the side wall is less than 5nm, and the aluminum oxide reflective coating layer (3) is arranged at the bottom of the thin film resonance cavity (2) by coating process and is attached to the germanium wafer substrate (1).
  5. 5. A compound semiconductor thin film resonant cavity structure as claimed in claim 1, wherein the left and right side sapphire layer high feet (4) are respectively electrically connected with the alumina reflective coating layer (3), and the electrical connection is ohmic contact connection, and the contact resistance is <5 omega.

Description

Compound semiconductor film resonance cavity structure Technical Field The utility model belongs to the technical field of optical fiber sound pressure, and particularly relates to a compound semiconductor film resonance cavity structure. Background In the technical field of optical fiber sound pressure, the traditional sound pressure sensing structure has the problem of insufficient sound pressure response sensitivity due to the design of adopting a silicon-based substrate and a polymer film. The existing resonant cavity has low response signal-to-noise ratio to weak sound pressure signals, the sound pressure energy is difficult to effectively excite resonance due to low Young modulus of the material, the signal conversion efficiency is low, interface delamination is easy to occur when the temperature fluctuates through a connection mode of an epoxy resin adhesive sensitive film, resonance frequency drift is caused, the film preparation process is difficult to control material uniformity, reflection spectrum fluctuation is caused, and part of the structure is used for enhancing stability, increasing the thickness of a substrate and preventing sound pressure energy transmission, so that the contradiction between stability and sensitivity is formed, and the requirements of scenes such as medical ultrasonic detection, underwater high-precision monitoring and the like on measurement precision are difficult to meet in the aspects of sound pressure response sensitivity, signal conversion precision and structural reliability of the existing resonant cavity structure. Disclosure of utility model In order to overcome the defects in the prior art, the utility model aims to provide a compound semiconductor film resonance cavity structure. The technical scheme includes that the compound semiconductor thin film resonance cavity structure comprises a germanium wafer substrate, a plurality of thin film resonance cavities distributed in an array are formed in the top surface of the germanium wafer substrate, the thin film resonance cavities are formed in the top surface of the germanium wafer substrate through a photoetching process, aluminum oxide reflection coating layers are arranged in the thin film resonance cavities near the middle of the thin film resonance cavities, sapphire layer high feet with the height of 60 mu m and the width of 500 mu m are respectively arranged on the left side and the right side of each aluminum oxide reflection coating layer through a photoetching technology, the sapphire layer high feet and the aluminum oxide reflection coating layers are of an integrated structure and are formed through selective growth of MOCVD technology, the left side of each sapphire layer high foot is used for inputting optical signals to the aluminum oxide reflection coating layers, and the right side of each sapphire layer high foot is used for transmitting the optical signals after reflection modulation to an external photoelectric detector. In a preferred embodiment, the germanium wafer substrate adopts a specification of 4-8 inches, the thickness is 100-200 μm, the thin film resonance cavities are distributed in a square array, the size of each cavity is 3×3mm, and the distance between adjacent cavities is 200-500 μm. In a preferred embodiment, the size of the alumina reflective coating layer is 1.5x1.5mm, the thickness is 15 μm, the alumina reflective coating layer is directly attached to the germanium wafer substrate through a magnetron sputtering or electron beam evaporation process, the surface roughness is <1nm, the reflectivity is more than 95%, and the control precision of the magnetron sputtering or electron beam evaporation process parameter is that the thickness error is < + -0.5 μm, and the uniformity deviation is < + -1%. In a preferred embodiment, the side wall of the film resonance cavity is prepared by a dry etching process, the verticality of the side wall is more than 85 degrees, the roughness of the side wall is less than 5nm, and the aluminum oxide reflective coating layer is arranged at the bottom of the film resonance cavity by a coating process and is attached to the germanium wafer substrate. In a preferred embodiment, the left and right sapphire layer high feet are respectively electrically connected with the alumina reflective coating layer, and the electrical connection is ohmic contact connection, and the contact resistance is <5 omega. In summary, due to the adoption of the technical scheme, the beneficial effects of the utility model are as follows: According to the utility model, due to the adoption of the scheme, the structure resists temperature fluctuation through the germanium wafer substrate, avoids resonance frequency drift, solves the problem of insufficient stability of the traditional silicon substrate, is matched with the side wall of the dry etching cavity, has obvious response to weak sound pressure and reduces energy loss, overcomes the defects of difficult sound pres