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CN-224216198-U - Flexible sensor

CN224216198UCN 224216198 UCN224216198 UCN 224216198UCN-224216198-U

Abstract

The utility model belongs to the technical field of flexible electronic devices, and discloses a flexible sensor which comprises a flexible panel layer, a first flexible conductive layer arranged on the lower surface of the flexible panel layer, a flexible substrate layer, a second flexible conductive layer arranged on the upper surface of the substrate layer and opposite to the first flexible conductive layer, and a gradient piezoresistive layer arranged between the first flexible conductive layer and the second flexible conductive layer. The gradient piezoresistive layer is composed of a semiconductor material. The first flexible conductive layer and the second flexible conductive layer are respectively provided with a first connection potential and a second connection potential for connecting external components. The gradient piezoresistive layer of the flexible sensor can respond to external forces of different degrees more accurately, the piezoresistive performance is optimized, and the problem of hole precision control of the insulating layer of the conventional flexible sensor is solved. Meanwhile, the gradient piezoresistive layer without holes is adopted, so that the mechanical strength and the tightness are improved, the service life, the stability and the reliability of the flexible sensor are improved, and the development requirement of flexible electronics is met.

Inventors

  • XU JINPING

Assignees

  • 广州六圈品牌管理服务有限公司

Dates

Publication Date
20260508
Application Date
20250627

Claims (9)

  1. 1. A flexible sensor, comprising A flexible panel layer; a first flexible conductive layer arranged on the lower surface of the flexible panel layer, a flexible substrate layer, A second flexible conductive layer arranged on the upper surface of the flexible substrate layer and opposite to the first flexible conductive layer, and The gradient piezoresistive layer is positioned between the first flexible conductive layer and the second flexible conductive layer, one surface of the gradient piezoresistive layer is attached to the first flexible conductive layer, the other surface of the gradient piezoresistive layer is attached to the second flexible conductive layer, and the gradient piezoresistive layer is made of a semiconductor material; The first flexible conductive layer is provided with a first connection potential, the second flexible conductive layer is provided with a second connection potential, and the first connection potential and the second connection potential are used for being connected with external components.
  2. 2. The flexible sensor of claim 1, wherein the gradient piezoresistive layer is comprised of at least one of a graphene/polymer piezoresistive composite, a monocrystalline silicon composite, a piezoresistive silicon-based material, a conductive textile, a conductive foam material.
  3. 3. The flexible sensor of claim 2, wherein the gradient piezoresistive layer is composed of a graphene/polymer piezoresistive composite, the gradient piezoresistive layer being divided into a number of piezoresistive partitions along a specific direction, the number of piezoresistive partitions being filled with graphene/polymer piezoresistive composites of different porosities and particle sizes, respectively.
  4. 4. A flexible sensor according to claim 3, wherein the gradient piezoresistive layer is divided into three piezoresistive zones along the direction from the first flexible conductive layer to the second flexible conductive layer, which are respectively a surface compact zone, a middle transition zone and a bottom support zone, and the three piezoresistive zones are sequentially filled with graphene/polymer piezoresistive composite materials with gradient increased porosity and particle size.
  5. 5. The flexible sensor of claim 4, wherein the underlying support region is a biomimetic cellular air cavity structure comprising cellular walls, cellular beams, and cellular cavities defined by the cellular walls and the cellular beams.
  6. 6. The flexible sensor of claim 1, wherein the first flexible conductive layer comprises a first soft silica gel layer, a first conductive film is formed on one surface of the first soft silica gel layer facing the gradient piezoresistive layer, and hemispherical convex pressure guide portions are uniformly distributed on the first conductive film.
  7. 7. The flexible sensor of claim 6, wherein the second flexible conductive layer comprises a second soft silica gel layer, a second conductive film is formed on a surface of the second soft silica gel layer facing the gradient piezoresistive layer, and the second conductive film is provided with a hemispherical concave array matched with the hemispherical convex pressure guiding part.
  8. 8. The flexible sensor of claim 1, wherein the flexible substrate layer is provided with a Thermoplastic Polyurethane (TPU) substrate layer, an Ecoflex impact absorbing layer and an Al 2 O 3 encapsulation layer in order towards a direction away from the second flexible conductive layer, and one surface of the Thermoplastic Polyurethane (TPU) substrate layer is attached to the second flexible conductive layer.
  9. 9. The flexible sensor of claim 1, wherein the flexible panel layer is a PET thick transparent film, and the upper surface of the flexible panel layer is distributed with pressing areas.

Description

Flexible sensor Technical Field The utility model relates to the technical field of flexible electronic devices, in particular to a flexible sensor. Background In recent years, flexible electronic technology has been rapidly developed, and along with the rise of internet of things and wearable technology, flexible electronic devices have become a mainstream trend of future electronic device development. In the field of flexible electronic devices, flexible sensors are commonly used for sensing external environmental changes and converting the external environmental changes into electrical signals, and are widely applied to the technologies of environmental monitoring, health detection, intelligent interaction, industrial automation and the like. A common flexible sensor is typically composed of an upper electrode, a lower electrode, and an insulating layer. The insulating layer is made of elastic material, and holes are formed in positions corresponding to the upper electrode and the lower electrode by using the elasticity of the elastic material. When the pressure of the external environment acts on the flexible sensor, the upper electrode is stressed to squeeze the insulating layer, so that the insulating layer is deformed, and the space at the original opening is compressed. Along with the increase of pressure, the distance between the upper electrode and the lower electrode gradually decreases, and when the pressure reaches a certain degree, the upper electrode is contacted with the lower electrode, so that an originally insulated circuit is conducted to form current, and an electric signal is generated. When the external pressure is reduced or eliminated, the insulating layer is restored to the original state by virtue of the elasticity of the insulating layer, the upper electrode is lifted by the elasticity, the upper electrode is separated from the lower electrode, the circuit is disconnected, and the electric signal is eliminated. However, there are a number of disadvantages to this design of openings in the insulating layer. From the aspect of hole size, the precision control difficulty is big, and the too big easy mistake of hole switches on, and is insensitive too little. In addition, the mechanical strength of the insulating layer is reduced by the open pores, the sealing performance is poor, the invasion of impurities is easy to occur, and the service life, the stability and the reliability of the sensor are affected. Semiconductor materials are a special class of materials with properties intermediate between conductors and insulators, whose unique electrical properties make them a vital role in the modern electronics arts. In normal state, some semiconductor materials have the characteristics of insulators and cannot conduct current, however, when the semiconductor materials are subjected to pressure, the internal microstructure of the semiconductor materials changes, and the resistivity of the semiconductor materials is drastically reduced, so that the semiconductor materials have the conductivity and the conductor performance. In view of the defects of the existing flexible sensor insulating layer with multiple open holes, the semiconductor material has excellent performance, and the flexible sensor is modified by using the semiconductor material, so that the structure of the existing insulating layer is hopefully changed, the performance is improved, the cost is reduced, and the flexible electronic development requirement is met. Disclosure of utility model In order to overcome the problems in the related art, the utility model provides the flexible sensor, wherein a semiconductor material is used for forming a composite insulating layer to replace the traditional open-pore insulating layer, so that the structural design is optimized, and the performance and the reliability of the flexible sensor are improved. The utility model adopts the technical proposal that the flexible sensor comprises A flexible panel layer; a first flexible conductive layer arranged on the lower surface of the flexible panel layer, a flexible substrate layer, A second flexible conductive layer arranged on the upper surface of the flexible substrate layer and opposite to the first flexible conductive layer, and The gradient piezoresistive layer is positioned between the first flexible conductive layer and the second flexible conductive layer, one surface of the gradient piezoresistive layer is attached to the first flexible conductive layer, the other surface of the gradient piezoresistive layer is attached to the second flexible conductive layer, and the gradient piezoresistive layer is made of a semiconductor material; The first flexible conductive layer is provided with a first connection potential, the second flexible conductive layer is provided with a second connection potential, and the first connection potential and the second connection potential are used for being connected with external components. Furthe