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CN-224216609-U - Wafer hidden crack detection device

CN224216609UCN 224216609 UCN224216609 UCN 224216609UCN-224216609-U

Abstract

The application discloses a wafer hidden crack detection device which comprises a moving assembly, a hidden crack detection assembly and a visual detection assembly, wherein the moving assembly comprises a heat conduction pipe, a driving unit and at least one guide rail extending along a set direction, the hidden crack detection assembly comprises a workbench used for fixing a wafer, the workbench is arranged on the guide rail and can move relative to the guide rail along the set direction under the action of the driving unit, at least part of the workbench covers the heat conduction pipe, and the visual detection assembly comprises an infrared detection camera used for shooting images of the wafer heated by the heat conduction pipe. The device can carry out hidden crack detection on the heated wafer, and improves the detection effect on the hidden crack defect of the wafer.

Inventors

  • LIU HUA
  • XIE LONGHUI
  • WU FEIFEI
  • ZHANG HANGJUN
  • GAO YINGQI
  • LI FENGXIANG

Assignees

  • 浙江求是半导体设备有限公司
  • 浙江晶盛机电股份有限公司

Dates

Publication Date
20260508
Application Date
20250421

Claims (10)

  1. 1. The utility model provides a wafer hidden crack detection device which characterized in that includes: a moving assembly (20), the moving assembly (20) comprising a heat pipe (21), a driving unit (22) and at least one guide rail (23) extending in a set direction; The hidden crack detection assembly (30), the hidden crack detection assembly (30) comprises a workbench (31) for fixing a wafer, the workbench (31) is mounted on the guide rail (23) and can move relative to the guide rail (23) along the set direction under the action of the driving unit (22), and at least part of the workbench (31) covers the heat conducting pipe (21); The visual detection assembly (40), the visual detection assembly (40) comprises an infrared detection camera (41), and the infrared detection camera (41) is used for shooting an image of the wafer heated by the heat conduction pipe (21).
  2. 2. The wafer decrepitation detection device according to claim 1, it is characterized in that the method comprises the steps of, The extending direction of the heat conduction pipe (21) is parallel to the extending direction of the guide rail (23), so that the heat conduction pipe (21) can continuously heat the wafer in the moving process of the workbench (31).
  3. 3. The wafer decrepitation detection device according to claim 1, it is characterized in that the method comprises the steps of, The workbench (31) comprises a workbench bottom plate (311), the workbench bottom plate (311) forms a mounting area (3111) for placing a wafer, a plurality of clamping mechanisms (314) are arranged on the workbench bottom plate (311), at least part of the clamping mechanisms (314) extend into the mounting area (3111), and the mounting area (3111) is communicated with the workbench bottom plate (311).
  4. 4. The apparatus for detecting wafer decrepitation according to claim 3, wherein, The workbench (31) further comprises a workbench housing (312) and a control element (313) for driving the clamping mechanism (314), wherein the workbench housing (312) is covered on the workbench bottom plate (311), and the control element (313) and/or at least part of the clamping mechanism (314) are/is located in a space formed by the workbench housing (312).
  5. 5. The wafer decrepitation detection device according to claim 4, it is characterized in that the method comprises the steps of, The clamping mechanism (314) comprises an adjusting bracket (3141) and a fixed shaft (3143), the adjusting bracket (3141) is connected with the carrier bottom plate (311) through the fixed shaft (3143) and can rotate along the circumferential direction of the fixed shaft (3143), the control element (313) comprises a cylinder (3131), one end of the adjusting bracket (3141) extends into the mounting area (3111), and the other end of the adjusting bracket (3141) is connected with the cylinder (3131).
  6. 6. The wafer decrepitation detection device according to claim 5, it is characterized in that the method comprises the steps of, The control element (313) further comprises an elastic member (3132), the elastic member (3132) and the cylinder (3131) are arranged at the same end of the adjusting bracket (3141), and the elastic member (3132) is used for applying an adjusting force to the adjusting bracket (3141), wherein the adjusting force is opposite to the driving force of the cylinder (3131).
  7. 7. The wafer decrepitation detection device according to claim 1, it is characterized in that the method comprises the steps of, The guide rail (23) comprises a first guide rail (231) extending along a first setting direction and a second guide rail (232) extending along a second setting direction, wherein the first setting direction and the second setting direction are parallel to a horizontal plane and are mutually perpendicular, the second guide rail (232) is mounted on the first guide rail (231) and can slide along the first setting direction relative to the first guide rail (231), and the workbench (31) is mounted on the second guide rail (232) and can slide along the second setting direction relative to the second guide rail (232).
  8. 8. The wafer decrepitation detection device according to claim 7, it is characterized in that the method comprises the steps of, The guide rail (23) comprises a pair of second guide rails (232) extending along the second set direction, and the pair of second guide rails (232) are distributed on two opposite side edges of the workbench (31) along the first set direction.
  9. 9. The wafer decrepitation detection device according to claim 8, it is characterized in that the method comprises the steps of, The heat conduction pipe (21) is arranged between a pair of the second guide rails (232), and both ends of the heat conduction pipe (21) are respectively connected with the second guide rails (232) in the corresponding direction.
  10. 10. The wafer decrepitation detection device according to claim 1, it is characterized in that the method comprises the steps of, The wafer hidden crack detection device (100) further comprises a bottom plate (10), the moving assembly (20) is installed on the bottom plate (10), the visual detection assembly (40) is erected on the bottom plate (10), and the infrared detection camera (41) is suspended above the guide rail (23).

Description

Wafer hidden crack detection device Technical Field The application relates to the technical field of wafer defect detection, in particular to a wafer hidden crack detection device. Background Silicon carbide (SiC) wafers are an important semiconductor material that is widely used in electronic devices in extreme operating environments such as high power, high frequency, high temperature, and the like. In the production and manufacturing process of silicon carbide wafers, the stability of the wafers plays a critical role in the working efficiency thereof. However, in the production process of silicon carbide wafers, the wafers may suffer from the occurrence of a hidden crack due to the instability of the previous process and the influence of objective conditions such as the environment. The hidden crack not only can affect the physical structure of the wafer, but also can cause serious negative influence on the subsequent processing technology, particularly in the doping control of the wafer, the heavily doped silicon carbide wafer and the lightly doped silicon carbide wafer cannot be effectively distinguished, the quality and the performance of the wafer can be further reduced, and therefore, the timely detection of the hidden crack defect in the wafer manufacturing process is extremely important. In the prior art, infrared hidden crack imaging is a main method for detecting hidden crack defects, and the detection rate of the hidden crack defects is higher, however, due to the fact that the distribution of the hidden crack defects of the heavily doped silicon carbide wafer is complex, the conventional infrared hidden crack detection method cannot effectively identify the hidden crack defects on the heavily doped silicon carbide wafer under certain conditions, so that the detection rate of the hidden crack defects of the heavily doped silicon carbide wafer is lower, and the detection effect of the hidden crack defects of the wafer needs to be further improved. Disclosure of utility model In order to solve the defects in the prior art, the application aims to provide the wafer hidden crack detection device which can carry out hidden crack detection on the heated wafer and improve the detection effect on the hidden crack defect of the wafer. In order to achieve the above purpose, the application adopts the following technical scheme: The wafer hidden crack detection device comprises a moving assembly and a visual detection assembly, wherein the moving assembly comprises a heat conduction pipe, a driving unit and at least one guide rail extending along a set direction, the hidden crack detection assembly comprises a working carrier used for fixing a wafer, the working carrier is arranged on the guide rail and can move relative to the guide rail along the set direction under the action of the driving unit, at least part of the working carrier covers the heat conduction pipe, and the visual detection assembly comprises an infrared detection camera used for shooting images of the wafer heated by the heat conduction pipe. Further, the extending direction of the heat conducting pipe is parallel to the extending direction of the guide rail, so that the heat conducting pipe can uninterruptedly heat the wafer in the moving process of the workbench. Further, the work carrier comprises a carrier bottom plate, the carrier bottom plate forms a mounting area for placing the wafer, a plurality of clamping mechanisms are arranged on the carrier bottom plate, at least part of the clamping mechanisms extend into the mounting area, and the mounting area penetrates through the carrier bottom plate. Further, the working platform further comprises a platform housing and a control element for driving the clamping mechanism, wherein the platform housing cover is arranged on the platform bottom plate, so that the control element and/or at least part of the clamping mechanism is positioned in a space formed by the platform housing. The clamping mechanism further comprises an adjusting bracket and a fixed shaft, the adjusting bracket is connected with the carrier bottom plate through the fixed shaft and can rotate along the circumferential direction of the fixed shaft, the control element comprises an air cylinder, one end of the adjusting bracket extends into the installation area, and the other end of the adjusting bracket is connected with the air cylinder. Further, the control element further comprises an elastic member, the elastic member and the air cylinder are arranged at the same end of the adjusting bracket, and the elastic member is used for applying adjusting force to the adjusting bracket, wherein the adjusting force is opposite to the driving force of the air cylinder. Further, the guide rail comprises a first guide rail extending along a first setting direction and a second guide rail extending along a second setting direction, the first setting direction and the second setting direction are parallel to the horizontal pl