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CN-224216906-U - Graphene nano strip waveguide coupling four rectangular cavity-based slow light device

CN224216906UCN 224216906 UCN224216906 UCN 224216906UCN-224216906-U

Abstract

The utility model relates to a slow light device based on graphene nano strip waveguide coupling four rectangular cavities, which comprises a silicon substrate, a sapphire layer, graphene nano strip waveguides, a first graphene rectangular resonant cavity, a second graphene rectangular resonant cavity, a third graphene rectangular resonant cavity and a fourth graphene rectangular resonant cavity, wherein the sapphire layer is arranged above the silicon substrate, and the graphene nano strip waveguides, the first graphene rectangular resonant cavity, the second graphene rectangular resonant cavity, the third graphene rectangular resonant cavity and the fourth graphene rectangular resonant cavity are arranged on the upper surface of the sapphire layer. The utility model realizes a large-group refractive index and wide-bandwidth infrared graphene structure slow-light device, and simultaneously realizes an ultra-compact graphene slow-light device, thereby greatly reducing the size of the graphene structure slow-light device.

Inventors

  • WANG BOYUN
  • YU HUAQING
  • LIU YANG

Assignees

  • 湖北工程学院

Dates

Publication Date
20260508
Application Date
20250718

Claims (9)

  1. 1. A slow light device based on graphene nano strip waveguide coupling four rectangular cavities is characterized by comprising a silicon substrate (1), a sapphire layer (2), a graphene nano strip waveguide (3), a first graphene rectangular resonant cavity (4), a second graphene rectangular resonant cavity (5), a third graphene rectangular resonant cavity (6) and a fourth graphene rectangular resonant cavity (7), wherein: The sapphire layer (2) is arranged above the silicon substrate (1), the graphene nano strip waveguide (3), the first graphene rectangular resonant cavity (4), the second graphene rectangular resonant cavity (5), the third graphene rectangular resonant cavity (6) and the fourth graphene rectangular resonant cavity (7) are arranged on the upper surface of the sapphire layer (2), the first graphene rectangular resonant cavity (4) and the second graphene rectangular resonant cavity (5) are arranged on one side of the graphene nano strip waveguide (3), the third graphene rectangular resonant cavity (6) and the fourth graphene rectangular resonant cavity (7) are arranged on the other side of the graphene nano strip waveguide (3), the first graphene rectangular resonant cavity (4) and the third graphene rectangular resonant cavity (6) are respectively and directly coupled with the graphene nano strip waveguide (3), the second graphene rectangular resonant cavity (5) is indirectly coupled with the fourth graphene rectangular resonant cavity (6) through the first graphene rectangular resonant cavity (4) and the graphene nano strip waveguide (3), and the second graphene rectangular resonant cavity (7) is indirectly coupled with the graphene nano strip waveguide (3).
  2. 2. The slow light device based on the graphene nano-strip waveguide coupling four rectangular cavities, which is disclosed in claim 1, is characterized in that the thickness of the silicon substrate (1) is 300 nm, and the thickness of the sapphire layer (2) is 200 nm.
  3. 3. The slow light device based on the graphene nano-strip waveguide coupling four rectangular cavities according to claim 2 is characterized in that the width of the graphene nano-strip waveguide (3) is 10 nm.
  4. 4. The slow light device based on graphene nano strip waveguide coupling four rectangular cavities according to claim 3, wherein the lengths of the first graphene rectangular resonant cavity (4), the second graphene rectangular resonant cavity (5), the third graphene rectangular resonant cavity (6) and the fourth graphene rectangular resonant cavity (7) are 140 nm, and the widths are 20 nm.
  5. 5. The slow light device based on the graphene nano strip waveguide coupling four rectangular cavities, which is disclosed in claim 4, is characterized in that the coupling distance between the first graphene rectangular resonant cavity (4), the third graphene rectangular resonant cavity (6) and the graphene nano strip waveguide (3) is 15 nm.
  6. 6. The slow light device based on graphene nano strip waveguide coupling four rectangular cavities according to claim 5 is characterized in that the coupling distance between the first graphene rectangular resonant cavity (4) and the second graphene rectangular resonant cavity (5) is 20 nm, and the coupling distance between the third graphene rectangular resonant cavity (6) and the fourth graphene rectangular resonant cavity (7) is 20 nm.
  7. 7. The slow light device based on the graphene nano strip waveguide coupling four rectangular cavities, which is disclosed in claim 6, is characterized in that the thickness of single-layer graphene adopted by the slow light device is 0.2 nm, the distances between dipoles of the slow light device excited SPPs and the centers of the first graphene rectangular resonant cavity (4), the second graphene rectangular resonant cavity (5), the third graphene rectangular resonant cavity (6) and the fourth graphene rectangular resonant cavity (7) are fixed to be 150 nm, and the distances between the centers of the first graphene rectangular resonant cavity (4), the second graphene rectangular resonant cavity (5), the third graphene rectangular resonant cavity (6) and the fourth graphene rectangular resonant cavity (7) and a detector are 150 nm.
  8. 8. The slow light device based on the graphene nano-strip waveguide coupling four rectangular cavities according to claim 7, wherein the fermi level of the graphene nano-strip waveguide (3) is 0.40 eV, the fermi level of the first graphene rectangular resonant cavity (4) is 0.40 eV, the fermi level of the second graphene rectangular resonant cavity (5) is 0.42eV, the fermi level of the third graphene rectangular resonant cavity is 0.42eV, and the fermi level of the fourth graphene rectangular resonant cavity (7) is 0.44eV.
  9. 9. The slow light device based on the graphene nano-strip waveguide coupling four rectangular cavities of claim 8, wherein the slow light device has a size smaller than 0.05 μm 2 .

Description

Graphene nano strip waveguide coupling four rectangular cavity-based slow light device Technical Field The utility model relates to the technical field of optical communication, in particular to a slow light device based on graphene nano strip waveguide coupling four rectangular cavities. Background In the field of optical communications, with the increase of transmission capacity, the phenomenon of "electronic bottlenecks" existing in optical-electrical-optical data routing and switching modes is more prominent, and has become an important factor for restricting the bandwidth, volume, cost, power consumption and rate of a communication network. In order to break through the "electronic bottleneck", all-optical networks have been developed, which is a necessary trend in the development of communication networks. The all-optical network relies on the capability of generating and controlling data buffering, logic conversion and signal delay, utilizes a slow optical device to delay and buffer signals, can avoid the problems of large volume, complex structure and the like of the traditional optical fiber delay line, and can realize tunable delay. Slow light means that the group velocity of the light pulses propagating in the medium is less than the velocity of light in vacuum. In all-optical communication network and all-optical signal processing, the slow optical device is a key node device for constructing the next generation information technology such as all-optical intelligent interconnection, real-time high-speed control and the like. With the rapid development of integrated slow optical devices based on key technologies such as signal delay, data buffering and exchange, the requirements of small size, large delay, wide bandwidth and dynamic tunability of slow optical devices in an infrared band are more and more obvious, so that the realization of the slow optical devices with compact device size, large group refractive index, wide bandwidth, dynamic tunability and easy integration of new working mechanisms is very important, and the application of the novel slow optical devices in all-optical communication networks and signal processing data routing, signal delay, data buffering and exchange technologies is more and more extensive. Surface plasmons (Surface Plasmon Polaritons, SPPs for short) are a type of surface electromagnetic evanescent wave that propagates along a metal-dielectric interface and decays exponentially in the direction perpendicular to the metal surface. SPPs have the characteristics of breaking through the traditional optical diffraction limit and enhancing the strong local optical field, so that the guidance and the control of light in the sub-wavelength level can be realized. SPPs can be used as a carrier of energy and information, and have important application value in high-density integrated photon circuits. Currently, SPPs-based slow-light devices, such as metamaterial and super-surface structure based slow-light buffers, have been widely studied. Since SPPs have strong local optical field enhancement characteristics and can overcome conventional diffraction limits, slow-light devices based on SPPs have small structural dimensions and wide bandwidths. The propagation direction of SPPs is parallel to the surface of the device, and the integration and design of chips are easy. Thus, it is a trend in the future to realize SPPs slow-light devices with compact device size, large group refractive index, wide bandwidth, dynamic tunability, and easy integration. Currently, SPPs slow light devices based on plasmon-induced transparency (Plasmon Induced Transparency, abbreviated as PIT) effect are attracting more and more attention. The generation of the PIT phenomenon is similar to the electromagnetic induction transparent (Electromagnetically Induced Transparency, EIT) effect in atomic gas, but compared with the EIT phenomenon in atomic gas, which is determined by the absorption characteristics of materials, the EIT-like phenomenon generated by the geometric structure of the resonant cavity coupled plasma waveguide system has a wider application prospect due to the characteristics of being capable of operating at room temperature, chip integration compatibility, transmission band tunability, bandwidth controllability and the like. In the graphene nano strip waveguide coupling rectangular cavity structure system, PIT effect is generated by utilizing the mutual coupling interference effect between a bright mode and a dark mode, so that slow light is realized. Because the PIT effect transparent peak has the characteristics of large quality factor, steeper transmission spectrum, large group delay caused by strong dispersion and the like, the PIT effect is suitable for being applied to slow light devices. In recent years, graphene, a two-dimensional material with a single carbon atom layer, provides a novel and low-loss way for limiting and controlling SPPs, and is widely applied to the desig