CN-224218290-U - Power module

CN224218290UCN 224218290 UCN224218290 UCN 224218290UCN-224218290-U

Abstract

The power module comprises a lining plate and a power circuit arranged on the lining plate, wherein the power circuit comprises a Vienna rectifying circuit and a three-phase full-bridge circuit, the output end of the Vienna rectifying circuit is connected with the input end of the three-phase full-bridge circuit, the power devices in the Vienna rectifying circuit and the three-phase full-bridge circuit are composed of a plurality of power chips with corresponding functions, and the power chips are silicon carbide power chips. The power factor of the power module can be improved by adopting the Vienna rectifying circuit, and meanwhile, the power module is formed by a plurality of power chips, so that the output current of the power module is improved, the output power is improved, and the silicon carbide chip is further adopted to replace the existing silicon chip, so that the chip volume can be reduced, and the volume increase of the power module is avoided under the condition of setting higher output power.

Inventors

GONG TIANWEI
LEI MING

Assignees

珠海格力电子元器件有限公司
珠海格力电器股份有限公司

Dates

Publication Date: 20260508
Application Date: 20250408

Claims (10)

1. The power module is characterized by comprising a lining plate and a power circuit arranged on the lining plate, wherein the power circuit comprises a Vienna rectifying circuit and a three-phase full-bridge circuit, the output end of the Vienna rectifying circuit is connected with the input end of the three-phase full-bridge circuit, and the power module comprises: The Vienna rectifying circuit and the power devices in the three-phase full-bridge circuit are composed of a plurality of power chips with corresponding functions, and the power chips are silicon carbide power chips.
2. The power module of claim 1, wherein the power device of the Vienna rectifier circuit comprises a first silicon carbide diode, a second silicon carbide diode, a third silicon carbide diode, a fourth silicon carbide diode, a fifth silicon carbide diode, a sixth silicon carbide diode, and a first silicon carbide MOS tube, a second silicon carbide MOS tube, a third silicon carbide MOS tube, a fourth silicon carbide MOS tube, a fifth silicon carbide MOS tube, and a sixth silicon carbide MOS tube comprising a bi-directional switch circuit, wherein the power device of the three-phase full bridge circuit comprises a seventh silicon carbide MOS tube, an eighth silicon carbide MOS tube, a ninth silicon carbide MOS tube, a tenth silicon carbide MOS tube, an eleventh silicon carbide MOS tube, and a twelfth silicon carbide MOS tube, wherein: And the electrodes of the silicon carbide diode and the silicon carbide MOS tube are led out to pins through the lead frame.
3. The power module of claim 2, wherein each silicon carbide diode in the vienna rectifier circuit is obtained by connecting two silicon carbide diode chips in parallel, and each silicon carbide MOS transistor in the vienna rectifier circuit is obtained by connecting three silicon carbide MOS chips in parallel; Each silicon carbide MOS tube in the three-phase full-bridge circuit is obtained by connecting three silicon carbide MOS tube chips in parallel.
4. The power module of claim 2 wherein each silicon carbide diode in the vienna rectifier circuit is comprised of one silicon carbide diode chip, each silicon carbide MOS transistor in the vienna rectifier circuit being derived from two silicon carbide MOS die chips connected in parallel; each silicon carbide MOS tube in the three-phase full-bridge circuit is obtained by connecting two silicon carbide MOS tube chips in parallel.
5. The power module of claim 2 wherein anode electrodes of the first silicon carbide diode, the second silicon carbide diode, and the third silicon carbide diode are routed through the lead frame to a first pin; The cathode electrode of the first silicon carbide diode, the anode electrode of the fourth silicon carbide diode and the drain electrode of the first silicon carbide MOS tube are led out to a second pin through the lead frame; The cathode electrode of the second silicon carbide diode, the anode electrode of the fifth silicon carbide diode and the drain electrode of the second silicon carbide MOS tube are led out to a third pin through the lead frame; the cathode electrode of the third silicon carbide diode, the anode electrode of the sixth silicon carbide diode and the drain electrode of the third silicon carbide MOS tube are led out to a fourth pin through the lead frame; Cathode electrodes of the fourth silicon carbide diode, the fifth silicon carbide diode and the sixth silicon carbide diode are led out to a twenty-ninth pin through the lead frame; The drain electrode of the seventh silicon carbide MOS tube, the drain electrode of the eighth silicon carbide MOS tube and the drain electrode of the ninth silicon carbide MOS tube are led out to a fifth pin through the lead frame; the source electrode of the seventh silicon carbide MOS tube and the drain electrode of the tenth silicon carbide MOS tube are led out to a sixth pin through the lead frame; The gate electrode of the seventh silicon carbide MOS tube is led out to a seventh pin through the lead frame; The source electrode of the eighth silicon carbide MOS tube and the drain electrode of the eleventh silicon carbide MOS tube are led out to an eighth pin through the lead frame; the gate electrode of the eighth silicon carbide MOS tube is led out to a ninth pin through the lead frame; The source electrode of the ninth silicon carbide MOS tube and the drain electrode of the twelfth silicon carbide MOS tube are led out to a tenth pin through the lead frame; The gate electrode of the ninth silicon carbide MOS tube is led out to an eleventh pin through the lead frame; The source electrode of the twelfth silicon carbide MOS tube is led out to a fourteenth pin through the lead frame; the gate electrode of the twelfth silicon carbide MOS tube is led out to a fifteenth pin through the lead frame; the source electrode of the eleventh silicon carbide MOS tube is led out to a sixteenth pin through the lead frame; the gate electrode of the eleventh silicon carbide MOS tube is led out to a seventeenth pin through the lead frame; The source electrode of the tenth silicon carbide MOS tube is led out to an eighteenth pin through the lead frame; the gate electrode of the tenth silicon carbide MOS tube is led out to a nineteenth pin through the lead frame; the gate electrode of the third silicon carbide MOS tube is led out to a twentieth pin through the lead frame; the source electrode of the third silicon carbide MOS tube and the source electrode of the sixth silicon carbide MOS tube are led out to a twenty-first pin through the lead frame; the gate electrode of the sixth silicon carbide MOS tube is led out to a twenty-second pin through the lead frame; the gate electrode of the fifth silicon carbide MOS tube is led out to a twenty-third pin through the lead frame; The source electrode of the second silicon carbide MOS tube and the source electrode of the fifth silicon carbide MOS tube are led out to a twenty-fourth pin through the lead frame; the gate electrode of the second silicon carbide MOS tube is led out to a twenty-fifth pin through the lead frame; the gate electrode of the first silicon carbide MOS tube is led out to a twenty-sixth pin through the lead frame; The source electrode of the first silicon carbide MOS tube and the source electrode of the fourth silicon carbide MOS tube are led out to a twenty-seventh pin through the lead frame; The gate electrode of the fourth silicon carbide MOS tube is led out to a twenty-eighth pin through the lead frame; Drain electrodes of the fourth silicon carbide MOS tube, the fifth silicon carbide MOS tube and the sixth silicon carbide MOS tube are led out to a thirty-th pin through the lead frame.
6. The power module of claim 2, wherein the leadframe includes a plurality of placement leadframes and a plurality of connection leadframes, wherein: The silicon carbide MOS transistor drain electrode is welded on the setting lead frame, and the setting lead frame leads out the set power devices to the same pin, the same setting lead frame or the electrodes of the same power device; The connecting lead frame is connected with the drain electrode or the source electrode of the silicon carbide MOS tube through a bonding wire, and the drain electrode or the source electrode of the silicon carbide MOS tube is led out to the corresponding pin.
7. The power module of claim 6, wherein the set-up lead frames include a first set-up lead frame on which the first silicon carbide diode and the first silicon carbide MOS transistor are disposed, a second set-up lead frame on which the second silicon carbide diode and the second silicon carbide MOS transistor are disposed, a third set-up lead frame on which the fourth silicon carbide diode is disposed, a fourth set-up lead frame on which the fifth silicon carbide diode and the sixth silicon carbide diode are disposed, a fifth set-up lead frame on which the fourth silicon carbide MOS transistor, the fifth silicon carbide MOS transistor and the sixth silicon carbide MOS transistor are disposed, and a sixth set-up lead frame on which the third silicon carbide diode is disposed, wherein: The first setting lead frame and the second setting lead frame are tripod-shaped frames, wherein platforms for welding power devices are arranged at two ends of each tripod-shaped frame, and the middle of each tripod-shaped frame sinks towards the bottom; The fifth lead frame is a mountain-shaped frame, wherein three protruding platforms for welding power devices are arranged on the bottom edge of the mountain-shaped frame, and each platform is correspondingly provided with a silicon carbide MOS tube; Wherein: The bottom of the first setting lead frame is opposite to the bottom of the second setting lead frame; The third setting lead frame is arranged on the sinking side of the first setting lead frame, and the fourth setting lead frame is arranged on the sinking side of the second setting lead frame; The third set lead frame and the fourth set lead frame are connected with the bottom of the second set lead frame by bonding wires crossing the first set lead frame; The first setting lead frame is used for setting one end of the first silicon carbide MOS tube and the second setting lead frame is used for setting one end of the second silicon carbide MOS tube, the second silicon carbide MOS tube is arranged between the two platforms of the mountain-shaped frame, the platform where the fourth silicon carbide MOS tube is arranged is opposite to the first silicon carbide MOS tube, and the platform where the fifth silicon carbide MOS tube is arranged is opposite to the second silicon carbide MOS tube; The sixth set of lead frames are arranged between the fourth set of lead frames and the corresponding pins.
8. The power module of claim 7, wherein the set-up lead frame further comprises a seventh set-up lead frame, an eighth set-up lead frame, a ninth set-up lead frame, a tenth set-up lead frame, and an eleventh set-up lead frame, wherein the seventh set-up lead frame is provided with the third silicon carbide MOS transistor, the sixth set-up lead frame is connected with the seventh set-up lead frame through a bonding wire, wherein the eighth set-up lead frame is provided with the tenth silicon carbide MOS transistor, wherein the ninth set-up lead frame is provided with the eleventh silicon carbide MOS transistor, wherein the tenth set-up lead frame is provided with the twelfth silicon carbide MOS transistor, wherein the eleventh set-up lead frame is provided with the seventh silicon carbide MOS transistor, the eighth silicon carbide MOS transistor, and the ninth silicon carbide MOS transistor, wherein: The eighth lead frame, the ninth lead frame and the tenth lead frame are tripod frames, wherein one end of each tripod frame is provided with a platform for welding a power device, and the middle of each tripod frame sinks towards the bottom; The eleventh lead frame is a mountain-shaped frame, wherein three protruding platforms for welding power devices are arranged on the bottom edge of the mountain-shaped frame, and each platform is correspondingly provided with a silicon carbide MOS tube; Wherein: the seventh lead frame is arranged opposite to the pins corresponding to the third silicon carbide MOS tube; The platform of the eighth lead frame is arranged opposite to the pin corresponding to the tenth silicon carbide MOS tube, and the other end of the eighth lead frame is arranged between the seventh silicon carbide MOS tube and the two platforms of the eighth silicon carbide MOS tube of the eleventh lead frame; The platform of the ninth lead frame is arranged opposite to the pin corresponding to the eleventh silicon carbide MOS tube, and the other end of the ninth lead frame is arranged between the eighth silicon carbide MOS tube of the eleventh lead frame and the two platforms where the ninth silicon carbide MOS tube is arranged; The platform of the tenth lead frame is arranged relative to the pins corresponding to the eleventh silicon carbide MOS tube, and the other end of the ninth lead frame is arranged relative to the platform of the ninth silicon carbide MOS tube of the eleventh lead frame; Wherein: The first setting lead frame is connected with the anode electrode of the fourth silicon carbide diode through a bonding wire, the second setting lead frame is connected with the anode electrode of the fifth silicon carbide diode through a bonding wire, and the sixth setting lead frame is connected with the anode electrode of the sixth silicon carbide diode through a bonding wire; The eighth set lead frame is connected with the source electrode of the seventh silicon carbide MOS tube through a bonding wire and led out to a corresponding pin; The ninth lead frame is connected with the source electrode of the eighth silicon carbide MOS tube through a bonding wire and led out to a corresponding pin; and the tenth lead frame is connected with the source electrode of the ninth silicon carbide MOS tube through a bonding wire and led out to the corresponding pin.
9. The power module of claim 6, wherein the connection lead frames include six first connection lead frames, three second connection lead frames, one third connection lead frame, six fourth connection lead frames, and three fifth connection lead frames, wherein: the first connecting lead frame is connected with a gate electrode of a silicon carbide MOS tube in the Vienna rectifying circuit through a bonding wire and led out to a corresponding pin; The second connecting lead frame is respectively connected with source electrodes of two silicon carbide MOS tubes in the same phase in the Vienna rectifying circuit through bonding wires and led out to corresponding pins, and the second connecting lead frame is arranged between the lead frames where the two silicon carbide MOS tubes are arranged; The third connecting lead frame is respectively connected with the cathode electrodes of the first silicon carbide diode, the second silicon carbide diode and the third silicon carbide diode through bonding wires and led out to corresponding pins, and the third connecting lead frame is arranged between the lead frame where the corresponding silicon carbide diode is positioned and the corresponding pin; The fourth connecting lead frame is respectively connected with the gate electrodes of the silicon carbide MOS tubes in the three-phase full-bridge circuit through bonding wires and led out to corresponding pins, and the fourth connecting lead frame is arranged between the lead frame where the corresponding silicon carbide MOS tubes are arranged and the corresponding pins; The fifth connecting lead frame is connected with source electrodes of the tenth silicon carbide MOS tube, the eleventh silicon carbide MOS tube and the twelfth silicon carbide MOS tube in a one-to-one correspondence manner through bonding wires and is led out to corresponding pins, and the fifth connecting lead frame is arranged between the lead frame where the corresponding silicon carbide MOS tube is arranged and the corresponding pins.
10. The power module of claim 1 wherein the backing plate is a ceramic backing plate.

Description

Power module Technical Field The present disclosure relates to semiconductor devices, and particularly to a power module. Background The output power of the existing PIM2 package is lower, the highest specification is only 1200V and 35A, if a chip with higher output power is directly adopted, the volume of the obtained power module is increased, which is unacceptable, so how to increase the output power under the condition that the volume of the existing power module is not increased is an urgent problem to be solved by the power module. Disclosure of utility model The utility model mainly aims to provide a power module, which aims to solve the problem of improving output power under the condition of keeping the volume of the existing power module not to be increased in the prior art. In order to achieve the above object, the present utility model provides a power module, which comprises a lining board and a power circuit arranged on the lining board, wherein the power circuit comprises a vienna rectifying circuit and a three-phase full-bridge circuit, an output end of the vienna rectifying circuit is connected with an input end of the three-phase full-bridge circuit, wherein: The Vienna rectifying circuit and the power devices in the three-phase full-bridge circuit are composed of a plurality of power chips with corresponding functions, and the power chips are silicon carbide power chips. Optionally, the power module further includes a lead frame and a plurality of pins; the power device of the Vienna rectification circuit comprises a first silicon carbide diode, a second silicon carbide diode, a third silicon carbide diode, a fourth silicon carbide diode, a fifth silicon carbide diode, a sixth silicon carbide diode, a first silicon carbide MOS tube, a second silicon carbide MOS tube, a third silicon carbide MOS tube, a fourth silicon carbide MOS tube, a fifth silicon carbide MOS tube and a sixth silicon carbide MOS tube which form a three-phase rectification circuit, wherein the power device of the three-phase full-bridge circuit comprises a seventh silicon carbide MOS tube, an eighth silicon carbide MOS tube, a ninth silicon carbide MOS tube, a tenth silicon carbide MOS tube, an eleventh silicon carbide MOS tube and a twelfth silicon carbide MOS tube, wherein: And the electrodes of the silicon carbide diode and the silicon carbide MOS tube are led out to pins through the lead frame. Optionally, each silicon carbide diode in the wiener rectifying circuit is obtained by connecting two silicon carbide diode chips in parallel, and each silicon carbide MOS tube in the wiener rectifying circuit is obtained by connecting three silicon carbide MOS chip in parallel; Each silicon carbide MOS tube in the three-phase full-bridge circuit is obtained by connecting three silicon carbide MOS tube chips in parallel. Optionally, each silicon carbide diode in the wiener rectifying circuit is formed by one silicon carbide diode chip, and each silicon carbide MOS tube in the wiener rectifying circuit is obtained by connecting two silicon carbide MOS chips in parallel; each silicon carbide MOS tube in the three-phase full-bridge circuit is obtained by connecting two silicon carbide MOS tube chips in parallel. Optionally, anode electrodes of the first silicon carbide diode, the second silicon carbide diode and the third silicon carbide diode are led out to a first pin through the lead frame; The cathode electrode of the first silicon carbide diode, the anode electrode of the fourth silicon carbide diode and the drain electrode of the first silicon carbide MOS tube are led out to a second pin through the lead frame; The cathode electrode of the second silicon carbide diode, the anode electrode of the fifth silicon carbide diode and the drain electrode of the second silicon carbide MOS tube are led out to a third pin through the lead frame; the cathode electrode of the third silicon carbide diode, the anode electrode of the sixth silicon carbide diode and the drain electrode of the third silicon carbide MOS tube are led out to a fourth pin through the lead frame; Cathode electrodes of the fourth silicon carbide diode, the fifth silicon carbide diode and the sixth silicon carbide diode are led out to a twenty-ninth pin through the lead frame; The drain electrode of the seventh silicon carbide MOS tube, the drain electrode of the eighth silicon carbide MOS tube and the drain electrode of the ninth silicon carbide MOS tube are led out to a fifth pin through the lead frame; the source electrode of the seventh silicon carbide MOS tube and the drain electrode of the tenth silicon carbide MOS tube are led out to a sixth pin through the lead frame; The gate electrode of the seventh silicon carbide MOS tube is led out to a seventh pin through the lead frame; The source electrode of the eighth silicon carbide MOS tube and the drain electrode of the eleventh silicon carbide MOS tube are led out to an eighth pin through the lead frame; the