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CN-224218743-U - Power device with integrated capacitor and electrical system

CN224218743UCN 224218743 UCN224218743 UCN 224218743UCN-224218743-U

Abstract

The present application provides a power device and electrical system with integrated capacitance, the power device comprises a device layer, a capacitance medium layer and a conductive layer, wherein the capacitance medium layer and the conductive layer are positioned on one side of the device layer. The capacitive dielectric layer includes a capacitive dielectric portion. The conductive layer is connected with the capacitance medium layer and comprises a first conductive part and a second conductive part. In the direction perpendicular to the device layer to the capacitance medium layer, the first conductive part and the second conductive part are arranged on two opposite sides of the capacitance medium part, and an integrated capacitance is formed based on the first conductive part, the capacitance medium part and the second conductive part. The capacitor element is integrated in the power device, so that the space occupied by the capacitor additionally arranged in the system circuit can be saved, and the integration level of the power device and an electrical system can be improved. The electric system comprises the power device, the whole circuit structure of the electric system is simplified, and the integration level is improved.

Inventors

  • WANG WAN
  • QU ZHIJUN

Assignees

  • 江苏索力德普半导体科技有限公司

Dates

Publication Date
20260508
Application Date
20250527

Claims (10)

  1. 1. The power device with the integrated capacitor is characterized by comprising a device layer, a capacitor dielectric layer and a conductive layer, wherein the capacitor dielectric layer and the conductive layer are positioned on one side of the device layer; the capacitance medium layer comprises a capacitance medium part; The conductive layer is connected with the capacitance medium layer, the conductive layer comprises a first conductive part and a second conductive part, and the first conductive part and the second conductive part are arranged on two opposite sides of the capacitance medium part in the direction perpendicular to the device layer and the capacitance medium layer; An integrated capacitor is formed based on the first conductive portion, the capacitance medium portion, and the second conductive portion.
  2. 2. The power device with integrated capacitance of claim 1, wherein the first conductive portion extends through at least a portion of the capacitive dielectric layer in a direction from the device layer to the capacitive dielectric layer, and/or wherein the second conductive portion extends through at least a portion of the capacitive dielectric layer, wherein a portion of the capacitive dielectric layer between the first conductive portion and the second conductive portion forms the capacitive dielectric portion.
  3. 3. The power device with integrated capacitance of claim 1, wherein the power device comprises a cell region and a termination region, the termination region being adjacent to a periphery of the cell region, the integrated capacitance being located in the termination region; The power device further comprises an extraction layer, the extraction layer comprises a first extraction metal and a second extraction metal, the first extraction metal is electrically connected with the first conductive part, and the second extraction metal is electrically connected with the second conductive part.
  4. 4. The power device with integrated capacitance of claim 3 further comprising a termination stop ring, wherein the termination stop ring is located in the termination region and wherein the termination stop ring is electrically connected to the second extraction metal.
  5. 5. The power device with integrated capacitance of claim 3 further comprising a passivation layer between said device layer and said capacitance dielectric layer, wherein a field plate layer is further formed in said passivation layer, said field plate layer being electrically connected to said second extraction metal.
  6. 6. The power device with integrated capacitance of claim 4 or 5, wherein the power device comprises a MOSFET or IGBT comprising a first functional electrode and a second functional electrode having different access potentials, The access potential of the second lead-out metal is the same as that of the first functional electrode, or The access potential of the second lead-out metal is the same as that of the second functional electrode.
  7. 7. The power device with integrated capacitance of claim 3, wherein said capacitive dielectric layer is located on one side of said cell area or said capacitive dielectric layer surrounds said cell area.
  8. 8. The power device with integrated capacitance of claim 1, wherein the capacitive dielectric layer is at least one of stripe, dog-ear, wave, serpentine, and spiral in a direction perpendicular to the device layer to the capacitive dielectric layer, and/or the first conductive portion is at least one of stripe, dog-ear, wave, serpentine, and spiral, and/or the second conductive portion is at least one of stripe, dog-ear, wave, serpentine, and spiral.
  9. 9. The power device with integrated capacitance of claim 1, wherein the material of the conductive layer comprises at least one of silicon, metal, and conductive metal compound, and/or the material of the capacitance dielectric layer comprises at least one of silicon oxide, silicon oxynitride, hafnium oxide, zirconium oxide, aluminum oxide, lanthanum oxide, tantalum oxide, titanium oxide, polypropylene, and polyphenylene sulfide.
  10. 10. An electrical system comprising a power device according to any one of claims 1-9 and a peripheral circuit, said peripheral circuit being electrically connected to said integrated capacitor.

Description

Power device with integrated capacitor and electrical system Technical Field The application belongs to the technical field of power devices, and relates to a power device with an integrated capacitor and an electrical system. Background In recent years, in order to achieve the goal of high power density, the power discrete semiconductor device is continuously evolving towards the miniaturization of chip area, the enhancement of current carrying capacity and the improvement of efficiency, and the packaging structure and the application system of the chip are also gradually pursuing higher integration level, for example, by reducing the volume of the power device, the whole volume of the system is reduced, and the power density is further improved. With the gradual optimization of chip design and process technology, the chip area of the power device with the same current specification is gradually reduced, which not only helps to reduce the cost of a single chip, but also improves the working efficiency (such as reducing on-resistance and switching loss). However, the breakthrough of the system level power density is not only dependent on the optimization of the power device itself, but also requires the synchronous reduction of the volume of peripheral circuit components (such as capacitors, inductors, etc.). Currently, peripheral circuits of power devices generally rely on discrete component configurations (e.g., discrete capacitors that are individually packaged on a circuit board and occupy additional space), resulting in a limited increase in the overall integration of the system. Therefore, how to provide a power device and an electrical system with integrated capacitor to achieve the enhancement of the integration level of the power device and the electrical system is an important technical problem to be solved by those skilled in the art. It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section. Disclosure of utility model In view of the above-mentioned drawbacks of the prior art, an object of the present application is to provide a power device and an electrical system with an integrated capacitor, which are used for solving the problem of limited integration of the electrical system in the prior art. To achieve the above and other related objects, in a first aspect, the present application provides a power device with an integrated capacitor, including a device layer, a capacitor dielectric layer, and a conductive layer, where the capacitor dielectric layer and the conductive layer are located on one side of the device layer; the capacitance medium layer comprises a capacitance medium part; The conductive layer is connected with the capacitance medium layer, the conductive layer comprises a first conductive part and a second conductive part, and the first conductive part and the second conductive part are arranged on two opposite sides of the capacitance medium part in the direction perpendicular to the device layer and the capacitance medium layer; An integrated capacitor is formed based on the first conductive portion, the capacitance medium portion, and the second conductive portion. In an alternative embodiment, the first conductive portion penetrates through at least a part of the capacitive dielectric layer in the direction from the device layer to the capacitive dielectric layer, and/or the second conductive portion penetrates through at least a part of the capacitive dielectric layer, wherein a portion of the capacitive dielectric layer between the first conductive portion and the second conductive portion forms the capacitive dielectric portion. In an alternative embodiment, the power device includes a cell region and a terminal region, the terminal region is adjacent to the periphery of the cell region, and the integrated capacitor is located in the terminal region; The power device further comprises an extraction layer, the extraction layer comprises a first extraction metal and a second extraction metal, the first extraction metal is electrically connected with the first conductive part, and the second extraction metal is electrically connected with the second conductive part. In an alternative embodiment, the power device further includes a terminal stop ring, the terminal stop ring is located in the terminal region, and the terminal stop ring is electrically connected with the second lead-out metal. In an alternative embodiment, the power device further includes a passivation layer, the passivation layer is located between the device layer and the capacitor dielectric layer, a field plate layer is